JP2014513868A5 - - Google Patents
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- JP2014513868A5 JP2014513868A5 JP2013558089A JP2013558089A JP2014513868A5 JP 2014513868 A5 JP2014513868 A5 JP 2014513868A5 JP 2013558089 A JP2013558089 A JP 2013558089A JP 2013558089 A JP2013558089 A JP 2013558089A JP 2014513868 A5 JP2014513868 A5 JP 2014513868A5
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- 210000002381 Plasma Anatomy 0.000 claims 13
- 239000007789 gas Substances 0.000 claims 11
- 238000000034 method Methods 0.000 claims 6
- 238000009832 plasma treatment Methods 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 239000000969 carrier Substances 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 1
- 229910052736 halogen Inorganic materials 0.000 claims 1
- 150000002367 halogens Chemical class 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
Claims (8)
- 基板をプラズマ・ダイシングする方法であって、
前記基板をキャリア支持部上に配置して加工物を形成するステップと、
前記加工物をプラズマ処理チャンバ内へロードするステップと、
第1のガスを使用する第1のプラズマ時分割多重式処理に前記プラズマ処理チャンバ内の前記加工物を露出させるステップと、
基板/テープの界面が露出された時点で前記第1のプラズマ時分割多重式処理を終了するステップと、
第2のガスを使用して第2のプラズマ処理に前記プラズマ処理チャンバ内の前記加工物を露出させるステップであって、該第2のプラズマ処理に前記加工物を露出させるステップは前記第1のプラズマ時分割多重式処理の終了後に始まり、前記第2のガスは前記第1のガスとは異なる組成を有するステップと
を含む方法。 - 前記第1のプラズマ時分割多重式処理の終了と前記加工物の第2のプラズマ処理への露出の間、前記加工物を前記プラズマ処理チャンバ内で真空下に維持するステップをさらに含む、請求項1に記載の方法。
- 前記プラズマ処理チャンバ内の前記加工物を第3のガスを使用して第3のプラズマ処理に露出させるステップをさらに含む、請求項2に記載の方法。
- 前記加工物の第2のプラズマ処理への露出と前記加工物の第3のプラズマ処理への露出の間、前記加工物を前記プラズマ処理チャンバ内で真空下に維持するステップをさらに含む、請求項3に記載の方法。
- 前記基板をフレーム上の支持フィルム上へ配置して前記加工物を形成するステップをさらに含む、請求項4に記載の方法。
- 前記第1のガスがハロゲン含有ガスである、請求項5に記載の方法。
- 前記第2のガスが水素含有ガスである、請求項6に記載の方法。
- 前記第3のガスがフッ素含有ガスである、請求項7に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161452450P | 2011-03-14 | 2011-03-14 | |
US61/452,450 | 2011-03-14 | ||
US13/412,119 | 2012-03-05 | ||
US13/412,119 US8802545B2 (en) | 2011-03-14 | 2012-03-05 | Method and apparatus for plasma dicing a semi-conductor wafer |
PCT/US2012/028771 WO2012125560A2 (en) | 2011-03-14 | 2012-03-12 | Method and apparatus for plasma dicing a semi-conductor wafer |
Related Child Applications (7)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015093178A Division JP2015146464A (ja) | 2011-03-14 | 2015-04-30 | 半導体ウェーハをプラズマ・ダイシングする方法及び装置 |
JP2015093179A Division JP2015173279A (ja) | 2011-03-14 | 2015-04-30 | 半導体ウェーハをプラズマ・ダイシングする方法及び装置 |
JP2015093180A Division JP2015179851A (ja) | 2011-03-14 | 2015-04-30 | 半導体ウェーハをプラズマ・ダイシングする方法及び装置 |
JP2015093177A Division JP2015146463A (ja) | 2011-03-14 | 2015-04-30 | 半導体ウェーハをプラズマ・ダイシングする方法及び装置 |
JP2015093181A Division JP6072851B2 (ja) | 2011-03-14 | 2015-04-30 | 半導体ウェーハをプラズマ・ダイシングする方法及び装置 |
JP2017073392A Division JP2017143294A (ja) | 2011-03-14 | 2017-04-03 | 半導体ウェーハをプラズマ・ダイシングする方法及び装置 |
JP2017073391A Division JP2017152713A (ja) | 2011-03-14 | 2017-04-03 | 半導体ウェーハをプラズマ・ダイシングする方法及び装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2014513868A JP2014513868A (ja) | 2014-06-05 |
JP2014513868A5 true JP2014513868A5 (ja) | 2015-05-28 |
JP6165635B2 JP6165635B2 (ja) | 2017-07-19 |
Family
ID=46828800
Family Applications (10)
Application Number | Title | Priority Date | Filing Date |
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JP2013558089A Active JP6165635B2 (ja) | 2011-03-14 | 2012-03-12 | 半導体ウェーハをプラズマ・ダイシングする方法及び装置 |
JP2015093180A Pending JP2015179851A (ja) | 2011-03-14 | 2015-04-30 | 半導体ウェーハをプラズマ・ダイシングする方法及び装置 |
JP2015093179A Pending JP2015173279A (ja) | 2011-03-14 | 2015-04-30 | 半導体ウェーハをプラズマ・ダイシングする方法及び装置 |
JP2015093177A Pending JP2015146463A (ja) | 2011-03-14 | 2015-04-30 | 半導体ウェーハをプラズマ・ダイシングする方法及び装置 |
JP2015093181A Active JP6072851B2 (ja) | 2011-03-14 | 2015-04-30 | 半導体ウェーハをプラズマ・ダイシングする方法及び装置 |
JP2015093178A Pending JP2015146464A (ja) | 2011-03-14 | 2015-04-30 | 半導体ウェーハをプラズマ・ダイシングする方法及び装置 |
JP2017073392A Pending JP2017143294A (ja) | 2011-03-14 | 2017-04-03 | 半導体ウェーハをプラズマ・ダイシングする方法及び装置 |
JP2017073391A Pending JP2017152713A (ja) | 2011-03-14 | 2017-04-03 | 半導体ウェーハをプラズマ・ダイシングする方法及び装置 |
JP2017104134A Active JP6336658B2 (ja) | 2011-03-14 | 2017-05-26 | 半導体ウェーハをプラズマ・ダイシングする方法及び装置 |
JP2017147610A Active JP6427236B2 (ja) | 2011-03-14 | 2017-07-31 | 半導体ウェーハをプラズマ・ダイシングする方法及び装置 |
Family Applications After (9)
Application Number | Title | Priority Date | Filing Date |
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JP2015093180A Pending JP2015179851A (ja) | 2011-03-14 | 2015-04-30 | 半導体ウェーハをプラズマ・ダイシングする方法及び装置 |
JP2015093179A Pending JP2015173279A (ja) | 2011-03-14 | 2015-04-30 | 半導体ウェーハをプラズマ・ダイシングする方法及び装置 |
JP2015093177A Pending JP2015146463A (ja) | 2011-03-14 | 2015-04-30 | 半導体ウェーハをプラズマ・ダイシングする方法及び装置 |
JP2015093181A Active JP6072851B2 (ja) | 2011-03-14 | 2015-04-30 | 半導体ウェーハをプラズマ・ダイシングする方法及び装置 |
JP2015093178A Pending JP2015146464A (ja) | 2011-03-14 | 2015-04-30 | 半導体ウェーハをプラズマ・ダイシングする方法及び装置 |
JP2017073392A Pending JP2017143294A (ja) | 2011-03-14 | 2017-04-03 | 半導体ウェーハをプラズマ・ダイシングする方法及び装置 |
JP2017073391A Pending JP2017152713A (ja) | 2011-03-14 | 2017-04-03 | 半導体ウェーハをプラズマ・ダイシングする方法及び装置 |
JP2017104134A Active JP6336658B2 (ja) | 2011-03-14 | 2017-05-26 | 半導体ウェーハをプラズマ・ダイシングする方法及び装置 |
JP2017147610A Active JP6427236B2 (ja) | 2011-03-14 | 2017-07-31 | 半導体ウェーハをプラズマ・ダイシングする方法及び装置 |
Country Status (6)
Country | Link |
---|---|
US (10) | US8802545B2 (ja) |
EP (6) | EP2698816A3 (ja) |
JP (10) | JP6165635B2 (ja) |
CN (6) | CN104810274B (ja) |
TW (7) | TWI601192B (ja) |
WO (1) | WO2012125560A2 (ja) |
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