ATE415702T1 - Endpunkt-erkennung in einem zeitlich gemultiplexten verfahren unter verwendung eines hüllkurvenalgorithmus - Google Patents

Endpunkt-erkennung in einem zeitlich gemultiplexten verfahren unter verwendung eines hüllkurvenalgorithmus

Info

Publication number
ATE415702T1
ATE415702T1 AT04751610T AT04751610T ATE415702T1 AT E415702 T1 ATE415702 T1 AT E415702T1 AT 04751610 T AT04751610 T AT 04751610T AT 04751610 T AT04751610 T AT 04751610T AT E415702 T1 ATE415702 T1 AT E415702T1
Authority
AT
Austria
Prior art keywords
endpoint detection
time multiplexed
alternating cyclical
multiplexed method
endpoint
Prior art date
Application number
AT04751610T
Other languages
English (en)
Inventor
Russell Westerman
David Johnson
Original Assignee
Unaxis Usa Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unaxis Usa Inc filed Critical Unaxis Usa Inc
Application granted granted Critical
Publication of ATE415702T1 publication Critical patent/ATE415702T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00563—Avoid or control over-etching
    • B81C1/00587—Processes for avoiding or controlling over-etching not provided for in B81C1/00571 - B81C1/00579
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Drying Of Semiconductors (AREA)
  • Time-Division Multiplex Systems (AREA)
  • ing And Chemical Polishing (AREA)
  • Television Systems (AREA)
  • Supplying Of Containers To The Packaging Station (AREA)
AT04751610T 2003-05-09 2004-05-06 Endpunkt-erkennung in einem zeitlich gemultiplexten verfahren unter verwendung eines hüllkurvenalgorithmus ATE415702T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US46933303P 2003-05-09 2003-05-09

Publications (1)

Publication Number Publication Date
ATE415702T1 true ATE415702T1 (de) 2008-12-15

Family

ID=33452276

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04751610T ATE415702T1 (de) 2003-05-09 2004-05-06 Endpunkt-erkennung in einem zeitlich gemultiplexten verfahren unter verwendung eines hüllkurvenalgorithmus

Country Status (8)

Country Link
US (1) US7101805B2 (de)
EP (1) EP1623457B1 (de)
JP (2) JP2007501532A (de)
CN (1) CN100401491C (de)
AT (1) ATE415702T1 (de)
DE (1) DE602004017983D1 (de)
TW (1) TWI319207B (de)
WO (1) WO2004102642A2 (de)

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Also Published As

Publication number Publication date
EP1623457B1 (de) 2008-11-26
TWI319207B (en) 2010-01-01
US7101805B2 (en) 2006-09-05
EP1623457A2 (de) 2006-02-08
DE602004017983D1 (de) 2009-01-08
US20040238489A1 (en) 2004-12-02
WO2004102642A3 (en) 2005-06-23
JP2007501532A (ja) 2007-01-25
WO2004102642A2 (en) 2004-11-25
TW200511429A (en) 2005-03-16
JP2010251813A (ja) 2010-11-04
CN1784778A (zh) 2006-06-07
CN100401491C (zh) 2008-07-09

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