JP4724795B2 - 時分割多重化エッチプロセスにおける終点検出方法 - Google Patents
時分割多重化エッチプロセスにおける終点検出方法 Download PDFInfo
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- JP4724795B2 JP4724795B2 JP2006503327A JP2006503327A JP4724795B2 JP 4724795 B2 JP4724795 B2 JP 4724795B2 JP 2006503327 A JP2006503327 A JP 2006503327A JP 2006503327 A JP2006503327 A JP 2006503327A JP 4724795 B2 JP4724795 B2 JP 4724795B2
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- 238000000034 method Methods 0.000 title claims abstract description 207
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- 238000000295 emission spectrum Methods 0.000 claims abstract description 23
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- 238000012544 monitoring process Methods 0.000 claims abstract description 15
- 238000000151 deposition Methods 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 26
- 230000008021 deposition Effects 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 13
- 238000004458 analytical method Methods 0.000 claims description 6
- 238000002161 passivation Methods 0.000 claims description 5
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
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- 238000005137 deposition process Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 7
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
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- 229960000909 sulfur hexafluoride Drugs 0.000 description 2
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32963—End-point detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Measurement And Recording Of Electrical Phenomena And Electrical Characteristics Of The Living Body (AREA)
- Television Systems (AREA)
- Time-Division Multiplex Systems (AREA)
Description
本出願は、2003年2月14日に出願され共通に所有されるEnd Point Detection in Time Division Multiplexed Etch Processesと称する米国仮特許出願第60/447,594号の優先権を請求し、またこれに関する。この仮特許出願を本明細書において参考のために引用する。
Claims (10)
- プラズマエッチングプロセスにおいて終点を確立する方法であって:
基板を真空チャンバ中に置く工程と;
プラズマによって前記基板から材料をエッチングする工程と;
プラズマによって前記基板表面にパッシベーション層を堆積する工程と;
エッチング工程及び堆積工程を反復するプロセスループを一定の反復速度で実行する工程と;
エッチング工程及び堆積工程の両方の過程において、少なくとも一つの予め定められた波長領域でプラズマ発光強度をサンプリングして発光信号を提供する工程と;
発光信号を周波数成分に分解し、プラズマ発光強度の変動を、プロセスループ工程におけるエッチング工程及び堆積工程の持続時間の和に対応する特性周波数で監視する工程と;
監視工程に基づいてプロセスループ工程を停止させる工程と;
前記真空チャンバから前記基板を取り出す工程と;
を含む方法。 - 前記プロセスによって課される周波数は、約5Hz未満である、請求項1に記載の方法。
- 前記プロセスループは、プロセスループ当り多数のエッチ工程をさらに含む、請求項1に記載の方法。
- 前記プロセスループは、プロセスループ当り多数の堆積工程をさらに含む、請求項1に記載の方法。
- 監視する工程は、プラズマ発光強度を複数の波長領域で監視することをさらに含む、請求項1に記載の方法。
- 前記複数の波長領域を監視する工程は、数学的操作を実行して、複数の周波数成分を抽出して、少なくとも1つの特性周波数を収集することをさらに含む、請求項5に記載の方法。
- 前記数学的操作は高速フーリエ変換である、請求項6に記載の方法。
- 前記複数の波長領域を監視する工程は、数学的操作を実行して、バックグラウンドプラズマ発光を補正することをさらに含む、請求項6に記載の方法。
- 前記波長領域は、プラズマ発光スペクトルの数学的解析によって選択される、請求項5に記載の方法。
- 前記数学的解析は主成分分析である、請求項9に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US44759403P | 2003-02-14 | 2003-02-14 | |
US60/447,594 | 2003-02-14 | ||
US10/770,839 US6982175B2 (en) | 2003-02-14 | 2004-02-02 | End point detection in time division multiplexed etch processes |
US10/770,839 | 2004-02-02 | ||
PCT/US2004/003235 WO2004075255A2 (en) | 2003-02-14 | 2004-02-04 | End point detection in time division multiplexed etch processes |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006518913A JP2006518913A (ja) | 2006-08-17 |
JP4724795B2 true JP4724795B2 (ja) | 2011-07-13 |
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006503327A Expired - Lifetime JP4724795B2 (ja) | 2003-02-14 | 2004-02-04 | 時分割多重化エッチプロセスにおける終点検出方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6982175B2 (ja) |
EP (1) | EP1593141B1 (ja) |
JP (1) | JP4724795B2 (ja) |
CN (1) | CN1739185B (ja) |
AT (1) | ATE381773T1 (ja) |
DE (1) | DE602004010786T2 (ja) |
WO (1) | WO2004075255A2 (ja) |
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Also Published As
Publication number | Publication date |
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DE602004010786T2 (de) | 2008-12-04 |
DE602004010786D1 (de) | 2008-01-31 |
EP1593141B1 (en) | 2007-12-19 |
CN1739185B (zh) | 2010-11-03 |
WO2004075255A3 (en) | 2004-11-04 |
ATE381773T1 (de) | 2008-01-15 |
JP2006518913A (ja) | 2006-08-17 |
US6982175B2 (en) | 2006-01-03 |
EP1593141A2 (en) | 2005-11-09 |
WO2004075255A2 (en) | 2004-09-02 |
CN1739185A (zh) | 2006-02-22 |
US20040175913A1 (en) | 2004-09-09 |
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