ATE381773T1 - Endpunktbestimmung in zeitmultiplex-ätzprozessen - Google Patents

Endpunktbestimmung in zeitmultiplex-ätzprozessen

Info

Publication number
ATE381773T1
ATE381773T1 AT04708207T AT04708207T ATE381773T1 AT E381773 T1 ATE381773 T1 AT E381773T1 AT 04708207 T AT04708207 T AT 04708207T AT 04708207 T AT04708207 T AT 04708207T AT E381773 T1 ATE381773 T1 AT E381773T1
Authority
AT
Austria
Prior art keywords
time division
division multiplexed
etching processes
time multiplex
endpoint determination
Prior art date
Application number
AT04708207T
Other languages
English (en)
Inventor
Russell Westerman
David Johnson
Original Assignee
Unaxis Usa Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unaxis Usa Inc filed Critical Unaxis Usa Inc
Application granted granted Critical
Publication of ATE381773T1 publication Critical patent/ATE381773T1/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/32935Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963End-point detection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/32935Monitoring and controlling tubes by information coming from the object and/or discharge

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Measurement And Recording Of Electrical Phenomena And Electrical Characteristics Of The Living Body (AREA)
  • Television Systems (AREA)
  • Time-Division Multiplex Systems (AREA)
AT04708207T 2003-02-14 2004-02-04 Endpunktbestimmung in zeitmultiplex-ätzprozessen ATE381773T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US44759403P 2003-02-14 2003-02-14
US10/770,839 US6982175B2 (en) 2003-02-14 2004-02-02 End point detection in time division multiplexed etch processes

Publications (1)

Publication Number Publication Date
ATE381773T1 true ATE381773T1 (de) 2008-01-15

Family

ID=32912269

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04708207T ATE381773T1 (de) 2003-02-14 2004-02-04 Endpunktbestimmung in zeitmultiplex-ätzprozessen

Country Status (7)

Country Link
US (1) US6982175B2 (de)
EP (1) EP1593141B1 (de)
JP (1) JP4724795B2 (de)
CN (1) CN1739185B (de)
AT (1) ATE381773T1 (de)
DE (1) DE602004010786T2 (de)
WO (1) WO2004075255A2 (de)

Families Citing this family (119)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4101280B2 (ja) * 2006-07-28 2008-06-18 住友精密工業株式会社 終点検出可能なプラズマエッチング方法及びプラズマエッチング装置
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8802545B2 (en) 2011-03-14 2014-08-12 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
US8691702B2 (en) 2011-03-14 2014-04-08 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
CN103151300A (zh) * 2013-02-20 2013-06-12 上海华力微电子有限公司 一种去除硬质掩膜结构中缺陷的方法
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
WO2014137905A2 (en) 2013-03-06 2014-09-12 Plasma-Therm, Llc Method and apparatus for plasma dicing a semi-conductor wafer
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9299614B2 (en) * 2013-12-10 2016-03-29 Applied Materials, Inc. Method and carrier for dicing a wafer
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9627186B2 (en) * 2014-08-29 2017-04-18 Lam Research Corporation System, method and apparatus for using optical data to monitor RF generator operations
US9478434B2 (en) 2014-09-24 2016-10-25 Applied Materials, Inc. Chlorine-based hardmask removal
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
JP6560909B2 (ja) * 2015-01-19 2019-08-14 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
JP6316224B2 (ja) * 2015-02-17 2018-04-25 東芝メモリ株式会社 半導体製造装置および半導体装置の製造方法
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
KR20170002764A (ko) 2015-06-29 2017-01-09 삼성전자주식회사 반도체 소자의 제조 방법
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10522429B2 (en) * 2015-11-30 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing semiconductor device
US9792393B2 (en) * 2016-02-08 2017-10-17 Lam Research Corporation Methods and apparatuses for etch profile optimization by reflectance spectra matching and surface kinetic model optimization
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10015412B2 (en) * 2016-09-06 2018-07-03 The Trustees For The Time Being Of Junior Barnes Family Trust Video capturing system and method for imaging cyclically moving objects
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
CN110583101B (zh) * 2017-05-25 2023-09-01 欧瑞康美科(美国)公司 使用实时电压监控的等离子体喷枪诊断
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
TWI716818B (zh) 2018-02-28 2021-01-21 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10572697B2 (en) 2018-04-06 2020-02-25 Lam Research Corporation Method of etch model calibration using optical scatterometry
CN112005347A (zh) 2018-04-10 2020-11-27 朗姆研究公司 抗蚀剂和蚀刻建模
CN111971551A (zh) 2018-04-10 2020-11-20 朗姆研究公司 机器学习中的光学计量以表征特征
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
US10977405B2 (en) 2019-01-29 2021-04-13 Lam Research Corporation Fill process optimization using feature scale modeling

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491499A (en) 1984-03-29 1985-01-01 At&T Technologies, Inc. Optical emission end point detector
JPS62194426A (ja) * 1986-02-21 1987-08-26 Hitachi Ltd 分光器
JPS6323324A (ja) * 1986-07-16 1988-01-30 Sharp Corp ドライエツチング装置
JPH088237B2 (ja) * 1986-10-17 1996-01-29 株式会社日立製作所 プラズマ処理方法
KR900007687B1 (ko) * 1986-10-17 1990-10-18 가부시기가이샤 히다찌세이사꾸쇼 플라즈마처리방법 및 장치
JP2918892B2 (ja) 1988-10-14 1999-07-12 株式会社日立製作所 プラズマエッチング処理方法
US5208644A (en) * 1990-05-18 1993-05-04 Xinix, Inc. Interference removal
DE4241045C1 (de) 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
US5308414A (en) 1992-12-23 1994-05-03 International Business Machines Corporation Method and apparatus for optical emission end point detection in plasma etching processes
US5450205A (en) 1993-05-28 1995-09-12 Massachusetts Institute Of Technology Apparatus and method for real-time measurement of thin film layer thickness and changes thereof
JP3766991B2 (ja) * 1995-10-20 2006-04-19 株式会社日立製作所 プラズマ処理の終点検出方法及び装置、並びに本検出方法及び装置を用いた半導体製造方法及び装置
US5658423A (en) 1995-11-27 1997-08-19 International Business Machines Corporation Monitoring and controlling plasma processes via optical emission using principal component analysis
US6104487A (en) 1996-12-20 2000-08-15 Texas Instruments Incorporated Plasma etching with fast endpoint detector
DE19730644C1 (de) 1997-07-17 1998-11-19 Bosch Gmbh Robert Verfahren zum Erkennen des Übergangs unterschiedlicher Materialien in Halbleiterstrukturen bei einer anisotropen Tiefenätzung
US6021215A (en) 1997-10-10 2000-02-01 Lucent Technologies, Inc. Dynamic data visualization
JP2000012527A (ja) * 1998-06-25 2000-01-14 Sumitomo Metal Ind Ltd エッチング終点判定方法及びエッチング終点判定装置
GB9827065D0 (en) * 1998-12-10 1999-02-03 Orbis Technologies Ltd A plasma etching control device
US6455437B1 (en) 1999-04-07 2002-09-24 Applied Materials Inc. Method and apparatus for monitoring the process state of a semiconductor device fabrication process
DE19919832A1 (de) * 1999-04-30 2000-11-09 Bosch Gmbh Robert Verfahren zum anisotropen Plasmaätzen von Halbleitern
JP2001044171A (ja) * 1999-07-28 2001-02-16 Matsushita Electric Ind Co Ltd エッチング終点検出方法および装置
US6675137B1 (en) * 1999-09-08 2004-01-06 Advanced Micro Devices, Inc. Method of data compression using principal components analysis
JP2001093885A (ja) * 1999-09-22 2001-04-06 Olympus Optical Co Ltd エッチング監視装置
US6745095B1 (en) * 2000-10-04 2004-06-01 Applied Materials, Inc. Detection of process endpoint through monitoring fluctuation of output data
CN1153056C (zh) * 2001-04-10 2004-06-09 华邦电子股份有限公司 以光学方法测量温度并监控蚀刻率的方法

Also Published As

Publication number Publication date
DE602004010786D1 (de) 2008-01-31
EP1593141B1 (de) 2007-12-19
US20040175913A1 (en) 2004-09-09
DE602004010786T2 (de) 2008-12-04
CN1739185B (zh) 2010-11-03
US6982175B2 (en) 2006-01-03
WO2004075255A2 (en) 2004-09-02
EP1593141A2 (de) 2005-11-09
JP2006518913A (ja) 2006-08-17
WO2004075255A3 (en) 2004-11-04
JP4724795B2 (ja) 2011-07-13
CN1739185A (zh) 2006-02-22

Similar Documents

Publication Publication Date Title
ATE381773T1 (de) Endpunktbestimmung in zeitmultiplex-ätzprozessen
WO2007024614A3 (en) Selection of wavelenghts for end point in a time division multiplexed process
DE602004017983D1 (de) Endpunkt-Erkennung in einem zeitlich gemultiplexten Verfahren unter Verwendung eines Hüllkurvenalgorithmus
ATE474256T1 (de) Prädiktives emissionsüberwachungssystem und verfahren
WO2004042791A3 (en) Method and apparatus for monitoring integrated circuit fabrication
WO2004030022A3 (en) Faims apparatus and mehtod for separating ions
EP1382406A3 (de) Verfahren und Vorrichtung zur Überwachung des Setzens von Blindnieten
DE60135563D1 (de) Anordnung zur Überwachung der Dicke einer Schicht, die an der Innenseite einer Prozesskammer abgeschieden wird
DK1509669T3 (da) Fremgangsmåde til regressionsanalyse af formationsparametre
WO2005001667A3 (en) Methods and apparatus for data analysis
ATE377339T1 (de) Audio-kodierung
ATE527431T1 (de) Spektralleistungsverhältnisverfahren und -system zum erkennen eines bohrerausfalls und zur meldung an den oberflächenbediener
SE0002723D0 (sv) Förfarande för att uppskatta skada på ett objekt, och förfarande och system för kontroll av användning av objektet
CA2445703A1 (en) Monitoring a microseismic event
WO2007002132A3 (en) High frequency or multifrequency resistivity tool
ATE509130T1 (de) Kolbenring sowie verfahren zur herstellung desselben
CA2457734A1 (en) Method and apparatus for predicting the time to failure of electronic devices at high temperatures
WO2006008172A3 (en) Method and apparatus for estimating a permeability distribution during a well test
WO2004044960A3 (en) Thermal interface composite structure and method of making same
WO2004042788A3 (en) Method and apparatus for determining an etch property using an endpoint signal
WO2003038889A3 (en) Method and apparatus for nitride spacer etch process implementing in situ interferometry endpoint detection and non-interferometry endpoint monitoring
FI20021901A0 (fi) Menetelmä prosessin valvomiseksi
WO2004099751A3 (en) Sealing process inspection device
SE9802537D0 (sv) Method for controlling a coating process
TW200504911A (en) Methods of controlling properties and characteristics of a gate insulation layer based upon electrical test data, and system for performing same

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties