JP4544231B2 - 半導体チップの製造方法 - Google Patents
半導体チップの製造方法 Download PDFInfo
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- JP4544231B2 JP4544231B2 JP2006274938A JP2006274938A JP4544231B2 JP 4544231 B2 JP4544231 B2 JP 4544231B2 JP 2006274938 A JP2006274938 A JP 2006274938A JP 2006274938 A JP2006274938 A JP 2006274938A JP 4544231 B2 JP4544231 B2 JP 4544231B2
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- 230000001681 protective effect Effects 0.000 claims description 26
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 21
- 229910001882 dioxygen Inorganic materials 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 20
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 19
- 239000011737 fluorine Substances 0.000 claims description 19
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 87
- 238000005498 polishing Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
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- 239000000463 material Substances 0.000 description 4
- 239000003507 refrigerant Substances 0.000 description 3
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- 235000002918 Fraxinus excelsior Nutrition 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002956 ash Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L24/743—Apparatus for manufacturing layer connectors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/30—Organic material
- B23K2103/42—Plastics
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L2224/743—Apparatus for manufacturing layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Dicing (AREA)
- Drying Of Semiconductors (AREA)
- Die Bonding (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
られた下部電極32と上部電極33、下部電極32に高周波電圧を印加する高周波電源部34、冷媒を下部電極32内に循環させる冷却ユニット35、上部電極33内から真空チャンバ31の外部に延び、真空チャンバ31の外部において二股に分かれたガス供給路36、二股に分かれたガス供給路36の一方側の分岐路(第1分岐路36aとする)に接続された酸素ガス供給部37、二股に分かれたガス供給路36の他方側の分岐路(第2分岐路36bとする)に接続されたフッ素系ガス供給部38、第1分岐路36a中に介装された第1開閉弁39及び第1流量制御弁40、第2分岐路36b中に介装された第2開閉弁41及び第2流量制御弁42から成っている。
とによって半導体ウエハ1の裏面の研磨を行う。これにより裏面が削られて厚さが100〜30μm程度まで薄くなった半導体ウエハ1が得られる(図3(d))。
状となった境界溝7の表面の平滑化を行う(図7に示す境界溝表面平滑化工程S6)。
なる。
ダイアタッチフィルム4をマスクとして使用している点に大きな特徴がある。
1a 回路パターン形成面
1b マスク形成面
1c 半導体ウエハの表面
1′ 半導体チップ
2 半導体素子
3 保護フィルム
4 ダイアタッチフィルム
5 UVテープ(耐熱性フィルム)
6 フィルム層
7 境界溝
8 ダイボンディングテープ
13a レーザ光
Claims (6)
- 半導体ウエハの回路パターン形成面に、この回路パターン形成面に形成された半導体素子を保護する保護フィルムを貼付する工程と、半導体ウエハの回路パターン形成面とは反対側のマスク形成面に、マスク形成面に貼り付けられるダイアタッチフィルム及びこのダイアタッチフィルムの外面に貼り付けられる耐熱性フィルムから成るフィルム層をマスクとして設けるマスキング工程と、半導体ウエハに設けられた前記フィルム層に、半導体ウエハの回路パターン形成面に形成された半導体素子同士を区分する境界溝を形成してその境界溝に半導体ウエハの表面を露出させる境界溝形成工程と、前記境界溝に露出した半導体ウエハの表面をフッ素系ガスのプラズマによりエッチングし、半導体ウエハを前記境界溝に沿って個々の半導体チップに切り分けるプラズマエッチング工程と、プラズマエッチング工程の後、前記フィルム層の外面にダイボンディングテープを貼付したうえで、半導体ウエハの回路パターン形成面から保護フィルムを剥離する工程とを含むことを特徴とする半導体チップの製造方法。
- プラズマエッチング工程の後、ダイアタッチフィルムと耐熱性フィルムの間の接着力を低下させる接着力低下処理工程とを実行することを特徴とする請求項1に記載の半導体チップの製造方法。
- 接着力低下処理工程を、半導体ウエハの回路パターン形成面から保護フィルムを剥離した後に実行することを特徴とする請求項2に記載の半導体チップの製造方法。
- 耐熱性フィルムがUVテープから成ることを特徴とする請求項1乃至3のいずれかに記載の半導体チップの製造方法。
- 境界溝形成工程における前記フィルム層への境界溝の形成を、レーザ光による前記フィルム層の切除によって行うことを特徴とする請求項1乃至4のいずれかに記載の半導体チップの製造方法。
- 境界溝形成工程とプラズマエッチング工程の間に、前記フィルム層に形成された境界溝の表面を酸素ガス若しくは酸素を主成分とする混合ガスのプラズマにより平滑化する境界溝表面平滑化工程を実行することを特徴とする請求項5に記載の半導体チップの製造方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006274938A JP4544231B2 (ja) | 2006-10-06 | 2006-10-06 | 半導体チップの製造方法 |
TW096137410A TW200818287A (en) | 2006-10-06 | 2007-10-05 | Method for fabricating semiconductor chip |
EP07829752A EP2038923B1 (en) | 2006-10-06 | 2007-10-05 | Method for fabricating semiconductor chips |
CN2007800021453A CN101366113B (zh) | 2006-10-06 | 2007-10-05 | 半导体芯片制作方法 |
KR1020087015210A KR20090075772A (ko) | 2006-10-06 | 2007-10-05 | 반도체 칩의 제조 방법 |
PCT/JP2007/070016 WO2008044778A1 (en) | 2006-10-06 | 2007-10-05 | Method for fabricating semiconductor chip |
US12/160,143 US7767551B2 (en) | 2006-10-06 | 2007-10-05 | Method for fabricating semiconductor chip |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006274938A JP4544231B2 (ja) | 2006-10-06 | 2006-10-06 | 半導体チップの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008098228A JP2008098228A (ja) | 2008-04-24 |
JP4544231B2 true JP4544231B2 (ja) | 2010-09-15 |
Family
ID=39137042
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006274938A Active JP4544231B2 (ja) | 2006-10-06 | 2006-10-06 | 半導体チップの製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7767551B2 (ja) |
EP (1) | EP2038923B1 (ja) |
JP (1) | JP4544231B2 (ja) |
KR (1) | KR20090075772A (ja) |
CN (1) | CN101366113B (ja) |
TW (1) | TW200818287A (ja) |
WO (1) | WO2008044778A1 (ja) |
Families Citing this family (139)
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US20090004780A1 (en) | 2009-01-01 |
CN101366113A (zh) | 2009-02-11 |
CN101366113B (zh) | 2010-12-01 |
KR20090075772A (ko) | 2009-07-09 |
JP2008098228A (ja) | 2008-04-24 |
EP2038923A1 (en) | 2009-03-25 |
WO2008044778A1 (en) | 2008-04-17 |
US7767551B2 (en) | 2010-08-03 |
TW200818287A (en) | 2008-04-16 |
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