JP6512454B2 - 素子チップの製造方法 - Google Patents
素子チップの製造方法 Download PDFInfo
- Publication number
- JP6512454B2 JP6512454B2 JP2016236922A JP2016236922A JP6512454B2 JP 6512454 B2 JP6512454 B2 JP 6512454B2 JP 2016236922 A JP2016236922 A JP 2016236922A JP 2016236922 A JP2016236922 A JP 2016236922A JP 6512454 B2 JP6512454 B2 JP 6512454B2
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- JP
- Japan
- Prior art keywords
- daf
- die attach
- attach film
- etching
- element chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 238000005530 etching Methods 0.000 claims description 75
- 238000000034 method Methods 0.000 claims description 47
- 239000007789 gas Substances 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 21
- 230000001681 protective effect Effects 0.000 claims description 16
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 75
- 239000010410 layer Substances 0.000 description 38
- 230000008569 process Effects 0.000 description 22
- 238000004380 ashing Methods 0.000 description 16
- 230000007246 mechanism Effects 0.000 description 15
- 239000000463 material Substances 0.000 description 12
- 238000012545 processing Methods 0.000 description 10
- 230000001965 increasing effect Effects 0.000 description 9
- 239000003507 refrigerant Substances 0.000 description 9
- 238000001816 cooling Methods 0.000 description 8
- 238000007689 inspection Methods 0.000 description 8
- 238000005520 cutting process Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000006185 dispersion Substances 0.000 description 6
- 238000000227 grinding Methods 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 238000005452 bending Methods 0.000 description 5
- 239000000945 filler Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000012634 fragment Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910001128 Sn alloy Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000000635 electron micrograph Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229920002577 polybenzoxazole Polymers 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000978 Pb alloy Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009300 dissolved air flotation Methods 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
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- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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Landscapes
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- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Dicing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
4 半導体層
4a 裏面(第2の面)
6 配線層
6a 表面(第1の面)
8 バンプ
10 半導体ウエハ(基板)
12 素子領域
14 分割領域
16 マスク
18 溝部
20 BGテープ(保護テープ)
22 研削装置
24 ダイアタッチフィルム(DAF)
26 搬送キャリア
26a ダイシングテープ(保持テープ)
26b フレーム
50…ドライエッチング装置(プラズマ処理装置)
52…チャンバ
52a…出入口
52b…排気口
52c…ガス導入口
54…誘電体壁
56…ICPコイル
58…第1の高周波電源部
60…ステージ
62…第1のガス源(第1のガス供給機構)
64…第2のガス源(第2のガス供給機構)
66…アッシングガス源
68…減圧機構
70…圧力調整弁
72…電極部
74…静電チャック
76…電極部本体
78…基台部
80…外装部
82…冷却装置
84…静電吸着用電極
86…RF(高周波)電極
88…直流電源
90…第2の高周波電源部
92…冷媒流路
94…冷媒循環装置
96…第1駆動ロッド
98…第1駆動機構
100…カバー
102…天井面
104…傾斜面
106…第2駆動ロッド
108…第2駆動機構
110…制御装置
Claims (5)
- 保護テープが貼り付けられた第1の面と、ダイアタッチフィルムが貼り付けられた第2の面とを有し、前記保護テープと前記ダイアタッチフィルムとによって互いに間隔をあけて保持されている複数の素子チップを準備し、
前記素子チップの前記第1の面から前記保護テープを剥がし、前記第1の面の側から見て前記素子チップの間で前記ダイアタッチフィルムを露出させ、
前記ダイアタッチフィルムに保持された複数の前記素子チップを酸素ラジカルとフッ素ラジカルを含むプラズマに曝し、前記素子チップの間に露出した前記ダイアタッチフィルムをエッチングする
ことを含む、素子チップの製造方法。 - 前記複数の素子チップの準備には、
前記素子チップの素子が形成された複数の素子領域と前記素子領域を画定する分割領域とを備える前記第1の面と、前記第1の面の反対側の前記第2の面とを有する基板を準備し、
前記基板の前記第1の面の前記分割領域に、前記第2の面に達しない深さの溝を形成し、
前記基板の前記第1の面に前記保護テープを貼り付けし、
前記保護テープに複数の前記素子チップが互いに間隔をあけて保持されるように、前記基板の前記第2の面を、前記溝が露出するまで研削することによって、複数の前記素子チップに個片化し、
前記保護テープに保持された複数の前記素子チップの前記第2の面に、前記ダイアタッチフィルムを貼りつけるとともに、前記ダイアタッチフィルムの前記素子チップと反対側の面を、フレームに支持された保持テープに貼り付ける
ことを含む、請求項1に記載の素子チップの製造方法。 - 前記保護テープを剥がして前記ダイアタッチフィルムを露出させた後、前記ダイアタッチフィルムに保持された複数の前記素子チップをSF 6 を原料ガスとして供給しながら生成させたプラズマに曝し、前記分割領域に形成された前記溝の表面を等方エッチングすることを含む、請求項2に記載の素子チップの製造方法。
- 前記分割領域に前記溝を形成する前に、前記基板の前記第1の面に、前記第1の面を被覆するマスクを形成することを含む、請求項2または請求項3に記載の素子チップの製造方法。
- 前記マスクの厚みが前記ダイアタッチフィルムの厚みよりも厚い、請求項4に記載の素子チップの製造方法。
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CN117878055A (zh) * | 2016-12-28 | 2024-04-12 | 艾德亚半导体接合科技有限公司 | 堆栈基板的处理 |
JP6903375B2 (ja) * | 2017-04-19 | 2021-07-14 | 株式会社ディスコ | デバイスチップの製造方法 |
US10964664B2 (en) | 2018-04-20 | 2021-03-30 | Invensas Bonding Technologies, Inc. | DBI to Si bonding for simplified handle wafer |
TWI741262B (zh) * | 2018-06-04 | 2021-10-01 | 美商帕斯馬舍門有限責任公司 | 切割晶粒附接膜的方法 |
JP7184458B2 (ja) * | 2018-11-06 | 2022-12-06 | 株式会社ディスコ | 金属膜付き半導体デバイスの製造方法 |
CN113491007A (zh) * | 2019-03-11 | 2021-10-08 | Hrl实验室有限责任公司 | 在金属嵌入式芯片组件(meca)处理期间保护晶粒的方法 |
JP7281764B2 (ja) * | 2019-03-14 | 2023-05-26 | パナソニックIpマネジメント株式会社 | 素子チップの製造方法 |
JP7281709B2 (ja) * | 2019-05-30 | 2023-05-26 | パナソニックIpマネジメント株式会社 | 素子チップの製造方法 |
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EP4071789A4 (en) | 2019-09-19 | 2024-02-14 | LG Electronics Inc. | SUBSTRATE CHUCK FOR SELF-ASSEMBLY OF LIGHT-EMITTING SEMICONDUCTOR DIODES |
KR102323256B1 (ko) | 2019-09-19 | 2021-11-08 | 엘지전자 주식회사 | 반도체 발광소자의 자가조립 장치 |
WO2021054548A1 (en) | 2019-09-19 | 2021-03-25 | Lg Electronics Inc. | Substrate chuck for self-assembling semiconductor light-emitting diodes |
WO2021054508A1 (ko) | 2019-09-19 | 2021-03-25 | 엘지전자 주식회사 | 반도체 발광소자의 자가조립 장치 |
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JP2014120494A (ja) * | 2012-12-13 | 2014-06-30 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
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