JP6716263B2 - ウエーハの加工方法 - Google Patents
ウエーハの加工方法 Download PDFInfo
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- JP6716263B2 JP6716263B2 JP2016010291A JP2016010291A JP6716263B2 JP 6716263 B2 JP6716263 B2 JP 6716263B2 JP 2016010291 A JP2016010291 A JP 2016010291A JP 2016010291 A JP2016010291 A JP 2016010291A JP 6716263 B2 JP6716263 B2 JP 6716263B2
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- H—ELECTRICITY
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- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68377—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
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- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
11 基材テープ
12 糊層
13 DAF
15 デバイス
17 保護テープ
38 記憶部
70 エキスパンドテープ
71 基材テープ
72 糊層
73 DAF
75 分割ライン
C チップ
W ウエーハ
Claims (2)
- 分割予定ラインで区画してデバイスを形成するウエーハの加工方法であって、
ウエーハの裏面にDAFと紫外線の照射によって硬化する糊層を有するダイシングテープを貼着させるテープ貼着工程と、
該テープ貼着工程を実施した後、該テープ貼着工程を実施した貼着装置で、ダイシングテープ側からウエーハを撮像した撮像画から、DAFとウエーハとの間が未接着となった接着不良箇所の不良チップ位置を記憶する記憶工程と、
該記憶工程を実施した後、ウエーハを該分割予定ラインに沿って個々のチップに分割すると共にDAFを分割装置で分割する分割工程と、
該分割工程を実施した後、ダイシングテープに紫外線を照射させ該糊層を硬化させ粘着力を低下させる紫外線照射工程と、
該紫外線照射工程の後、該貼着装置により該記憶工程で記憶した該不良チップ位置を避けてDAF接着良好なチップを該糊層とDAFとの境で離間させ該DAF接着良好なチップを該DAFと共にピックアップ装置でピックアップするピックアップ工程と、
を備えるウエーハの加工方法。 - 分割予定ラインで区画してデバイスを形成するウエーハの加工方法であって、
ウエーハを該分割予定ラインに沿って個々のチップに分割するウエーハ分割工程と、
該ウエーハ分割工程を実施した後、分割されたウエーハの裏面にDAFと紫外線の照射によって硬化する糊層を有するエキスパンドテープを貼着するテープ貼着工程と、
該テープ貼着工程を実施した後、該テープ貼着工程を実施した貼着装置で、エキスパンドテープ側から分割後のウエーハを撮像した撮像画から、チップ間の分割ラインを除去すると共に、DAFとウエーハとの間が未接着となった接着不良箇所の不良チップ位置を記憶する記憶工程と、
該記憶工程を実施した後、個々のチップ毎にDAFを分割するDAF分割工程と、
該DAF分割工程を実施した後、エキスパンドテープに紫外線を照射させ該糊層を硬化させ粘着力を低下させる紫外線照射工程と、
該紫外線照射工程の後、該貼着装置により該記憶工程で記憶した該不良チップ位置を避けてDAF接着良好なチップを該糊層とDAFとの境で離間させ該DAF接着良好なチップを該DAFと共にピックアップ装置でピックアップするピックアップ工程と、
を備えるウエーハの加工方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016010291A JP6716263B2 (ja) | 2016-01-22 | 2016-01-22 | ウエーハの加工方法 |
TW105140455A TWI708300B (zh) | 2016-01-22 | 2016-12-07 | 晶圓的加工方法 |
KR1020170000698A KR102529346B1 (ko) | 2016-01-22 | 2017-01-03 | 웨이퍼의 가공 방법 |
CN201710033605.4A CN106997866B (zh) | 2016-01-22 | 2017-01-18 | 晶片的加工方法 |
US15/410,886 US9881828B2 (en) | 2016-01-22 | 2017-01-20 | Wafer processing method |
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JP2016010291A JP6716263B2 (ja) | 2016-01-22 | 2016-01-22 | ウエーハの加工方法 |
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JP2017130598A JP2017130598A (ja) | 2017-07-27 |
JP6716263B2 true JP6716263B2 (ja) | 2020-07-01 |
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JP2016010291A Active JP6716263B2 (ja) | 2016-01-22 | 2016-01-22 | ウエーハの加工方法 |
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US (1) | US9881828B2 (ja) |
JP (1) | JP6716263B2 (ja) |
KR (1) | KR102529346B1 (ja) |
CN (1) | CN106997866B (ja) |
TW (1) | TWI708300B (ja) |
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JP6896337B2 (ja) * | 2017-06-01 | 2021-06-30 | 株式会社ディスコ | 扇状ウェーハ片の加工方法 |
JP2019118949A (ja) * | 2018-01-11 | 2019-07-22 | 株式会社ディスコ | 加工装置 |
JP7027234B2 (ja) * | 2018-04-16 | 2022-03-01 | 株式会社ディスコ | ウエーハの加工方法 |
KR102563869B1 (ko) | 2018-06-05 | 2023-08-04 | (주)이녹스첨단소재 | 대전방지 다이 어태치 필름, 이의 제조방법 및 이를 이용한 웨이퍼 다이싱 공정 |
US11430677B2 (en) * | 2018-10-30 | 2022-08-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wafer taping apparatus and method |
JP7343293B2 (ja) * | 2019-04-18 | 2023-09-12 | 株式会社ディスコ | 分割加工装置 |
JP7326053B2 (ja) * | 2019-07-11 | 2023-08-15 | 株式会社ディスコ | 被加工物の加工方法 |
JP7286464B2 (ja) * | 2019-08-02 | 2023-06-05 | 株式会社ディスコ | レーザー加工装置 |
CN112201600B (zh) * | 2020-10-14 | 2024-03-08 | 北京中科镭特电子有限公司 | 一种晶圆劈裂扩片装置及晶圆裂片扩片方法 |
US20230064066A1 (en) * | 2021-08-27 | 2023-03-02 | Texas Instruments Incorporated | Wafer-level backside layer for semiconductor apparatus |
CN114309970B (zh) * | 2022-03-14 | 2022-07-15 | 宁波劳伦斯汽车内饰件有限公司 | 一种带有未干燥粘接剂的汽车内饰件的激光镂刻方法 |
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US20170213756A1 (en) | 2017-07-27 |
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