JP2018190902A - 加工方法 - Google Patents
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- 238000003672 processing method Methods 0.000 title claims abstract description 74
- 238000004140 cleaning Methods 0.000 claims abstract description 63
- 239000007788 liquid Substances 0.000 claims abstract description 48
- 238000001020 plasma etching Methods 0.000 claims abstract description 44
- 239000011248 coating agent Substances 0.000 claims abstract description 34
- 238000000576 coating method Methods 0.000 claims abstract description 34
- 238000005530 etching Methods 0.000 claims description 23
- 238000012545 processing Methods 0.000 claims description 17
- 238000002360 preparation method Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 8
- 239000003292 glue Substances 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000012805 post-processing Methods 0.000 abstract 1
- 239000002390 adhesive tape Substances 0.000 description 26
- 239000007789 gas Substances 0.000 description 26
- 239000010410 layer Substances 0.000 description 25
- 238000002161 passivation Methods 0.000 description 23
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 10
- 238000000151 deposition Methods 0.000 description 10
- 229910052731 fluorine Inorganic materials 0.000 description 10
- 239000011737 fluorine Substances 0.000 description 10
- 239000003507 refrigerant Substances 0.000 description 10
- 238000000227 grinding Methods 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 239000012790 adhesive layer Substances 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 6
- 239000003960 organic solvent Substances 0.000 description 6
- 229920000139 polyethylene terephthalate Polymers 0.000 description 5
- 239000005020 polyethylene terephthalate Substances 0.000 description 5
- 229920000915 polyvinyl chloride Polymers 0.000 description 5
- 239000004800 polyvinyl chloride Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003028 elevating effect Effects 0.000 description 3
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- -1 Polyethylene Terephthalate Polymers 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 238000002679 ablation Methods 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 2
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 2
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
【解決手段】加工方法は、被加工物表面のデバイスを覆うとともにストリートを露出させるマスクを準備するマスク準備ステップST2と、裏面に保持部材が配設された被加工物に対してマスクを介してプラズマ化したSF6を供給して溝を形成し、次いでプラズマ化したC4F8をマスクを介して被加工物に供給して被加工物に被膜を堆積させた後、プラズマ化したSF6をマスクを介して被加工物に供給することで溝底の被膜を除去して溝底の底面をエッチングすることを繰り返すプラズマエッチングステップST3と、プラズマエッチングステップST3を実施した後、被加工物を洗浄液で洗浄してプラズマエッチングステップST3で生成された被膜を除去する異物除去ステップST4とを備える。
【選択図】図4
Description
本発明の実施形態1に係る加工方法を図面に基づいて説明する。図1は、実施形態1に係る加工方法の加工対象の被加工物の一例を示す斜視図である。図2は、図1中のII部を拡大して示す平面図である。図3は、図2に示された被加工物の突起電極等の断面図である。
密閉空間11の圧力:25Pa
高周波電力の周波数:13.56MHz
吸着保持部材34の温度:10℃
冷媒供給ユニット51が供給するヘリウムガスの圧力:2000Pa(ゲージ圧)
上部電極40に印加する電力:2500W
下部電極30に印加する電力:150W
上部電極40から供給するガスの種類:SF6
上部電極40から供給するガスの流量:400sccm(standard cubic centimeter per minute)
ステップ時間:5秒
上部電極40に印加する電力:2500W
下部電極30に印加する電力:50W
上部電極40から供給するガスの種類:C4F8
上部電極40から供給するガスの流量:400sccm(standard cubic centimeter per minute)
ステップ時間:3秒
本発明の実施形態2に係る加工方法を図面に基いて説明する。図11は、実施形態2に係る加工方法の流れを示すフローチャートである。図11は、実施形態1と同一部分に同一符号を付して説明を省略する。
本発明の実施形態3に係る加工方法を図面に基いて説明する。図12は、実施形態3に係る加工方法の流れを示すフローチャートである。図12は、実施形態1と同一部分に同一符号を付して説明を省略する。
200 被加工物
201 ストリート
202 デバイス
203 表面
204 突起電極
205 パッシベーション層(マスク)
208 裏面
210 保持部材
211 粘着テープ(テープ)
212 環状フレーム
213 基材層
214 糊層
220 溝
300 被膜
ST1 保持部材配設ステップ
ST2 マスク準備ステップ
ST3 プラズマエッチングステップ
ST4 異物除去ステップ
Claims (5)
- 交差する複数のストリートで区画された各領域にそれぞれデバイスが形成された表面を有し、該デバイスは突起電極を備えた被加工物の加工方法であって、
被加工物表面の該デバイスを覆うとともに該ストリートを露出させるマスクを準備するマスク準備ステップと、
表面の該デバイスが該マスクで覆われるとともに裏面に保持部材が配設された被加工物に対して該マスクを介してプラズマ化したSF6を供給して溝を形成し、次いでプラズマ化したC4F8を該マスクを介して被加工物に供給して被加工物に被膜を堆積させた後、プラズマ化したSF6を該マスクを介して被加工物に供給することで該溝底の該被膜を除去して該溝底の底面をエッチングすることを繰り返すプラズマエッチングステップと、
該プラズマエッチングステップを実施した後、被加工物を洗浄液で洗浄して該プラズマエッチングステップで生成された該被膜を除去する異物除去ステップと、を備えた加工方法。 - 該プラズマエッチングステップを実施する前に、被加工物の裏面に保持部材を配設する保持部材配設ステップを更に備えた、請求項1に記載の加工方法。
- 該異物除去ステップは、被加工物が洗浄液中に浸漬されて実施される、請求項1に記載の加工方法。
- 該保持部材は、基材層と該基材層上に配設された糊層とからなるテープと、該テープの外周縁が貼着された環状フレームと、からなり、
該異物除去ステップでは、被加工物は裏面に貼着された該テープと該環状フレームとともに該洗浄液中に浸漬される、請求項3に記載の加工方法。 - 該異物除去ステップでは、該洗浄液を常温よりも加熱し、超音波振動を付与して実施する、請求項3に記載の加工方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017094115A JP6899252B2 (ja) | 2017-05-10 | 2017-05-10 | 加工方法 |
TW107112252A TWI744515B (zh) | 2017-05-10 | 2018-04-10 | 被加工物的加工方法 |
CN201810409277.8A CN108878284B (zh) | 2017-05-10 | 2018-05-02 | 被加工物的加工方法 |
US15/974,223 US20180330957A1 (en) | 2017-05-10 | 2018-05-08 | Workpiece processing method |
KR1020180053214A KR102461442B1 (ko) | 2017-05-10 | 2018-05-09 | 피가공물의 가공 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017094115A JP6899252B2 (ja) | 2017-05-10 | 2017-05-10 | 加工方法 |
Publications (2)
Publication Number | Publication Date |
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JP2018190902A true JP2018190902A (ja) | 2018-11-29 |
JP6899252B2 JP6899252B2 (ja) | 2021-07-07 |
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- 2018-05-02 CN CN201810409277.8A patent/CN108878284B/zh active Active
- 2018-05-08 US US15/974,223 patent/US20180330957A1/en not_active Abandoned
- 2018-05-09 KR KR1020180053214A patent/KR102461442B1/ko active IP Right Grant
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CN108878284A (zh) | 2018-11-23 |
TWI744515B (zh) | 2021-11-01 |
CN108878284B (zh) | 2024-02-20 |
KR102461442B1 (ko) | 2022-10-31 |
TW201901798A (zh) | 2019-01-01 |
KR20180123982A (ko) | 2018-11-20 |
US20180330957A1 (en) | 2018-11-15 |
JP6899252B2 (ja) | 2021-07-07 |
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