JP2016039186A - ウエーハの加工方法 - Google Patents
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- 238000003672 processing method Methods 0.000 title claims abstract description 39
- 238000001020 plasma etching Methods 0.000 claims abstract description 35
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- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 5
- CUDYYMUUJHLCGZ-UHFFFAOYSA-N 2-(2-methoxypropoxy)propan-1-ol Chemical compound COC(C)COC(C)CO CUDYYMUUJHLCGZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000005507 spraying Methods 0.000 abstract description 4
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- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 15
- 238000005530 etching Methods 0.000 description 13
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- 238000009623 Bosch process Methods 0.000 description 4
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- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
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- 230000002035 prolonged effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910020177 SiOF Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
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- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
【解決手段】ウエーハの加工方法は、ウエーハWの表面WSの分割予定ラインを除く領域にレジスト膜を被覆するレジスト膜被覆ステップと、ウエーハWにプラズマエッチングを実施し、ウエーハWの表面WSに分割予定ラインに沿った仕上げ厚さに至る溝Sを形成するプラズマエッチングステップと、ウエーハWの表面WSのレジスト膜を洗浄して除去するレジスト膜除去ステップと、ウエーハWの裏面WRを研削して仕上げ厚さへと薄化するとともに溝SをウエーハWの裏面WRに露出させることでウエーハWを個々のデバイスチップに分割する研削ステップを備える。レジスト膜除去ステップでは、ウエーハWのレジスト膜に薬液MFを噴射して吹きつけレジスト膜を除去する。
【選択図】図5
Description
実施形態に係るウエーハの加工方法を、図1から図9に基づいて説明する。図1は、実施形態に係るウエーハの加工方法の保護部材貼着ステップを示す斜視図、図2は、実施形態に係るウエーハの加工方法のレジスト膜被覆ステップ後を示す斜視図、図3は、実施形態に係るウエーハの加工方法のプラズマエッチングステップで用いられるプラズマエッチング装置の一例の断面図、図4は、実施形態に係るウエーハの加工方法のプラズマエッチングステップ後のウエーハの断面図、図5は、実施形態に係るウエーハの加工方法のレジスト膜除去ステップを示す断面図、図6は、実施形態に係るウエーハの加工方法のレジスト膜除去ステップを模式的に示す平面図、図7は、実施形態に係るウエーハの加工方法の研削ステップの断面図、図8は、実施形態に係るウエーハの加工方法の研削ステップ後のウエーハの断面図、図9は、実施形態に係るウエーハの加工方法の貼り換えステップを示す斜視図である。
D デバイス
R レジスト膜
L 分割予定ライン
MF 薬液
S 溝
T 仕上げ厚さ
W ウエーハ
WS 表面
WR 裏面
Claims (3)
- 表面の交差する複数の分割予定ラインによって区画された領域にデバイスが形成されたウエーハの加工方法であって、
ウエーハの表面の該分割予定ラインを除く領域にレジスト膜を被覆するレジスト膜被覆ステップと、
該レジスト膜被覆ステップが実施されたウエーハにプラズマエッチングを実施し、ウエーハの表面に該分割予定ラインに沿った仕上げ厚さに至る溝を形成するプラズマエッチングステップと、
該プラズマエッチングステップを実施した後に、ウエーハの表面のレジスト膜を洗浄して除去するレジスト膜除去ステップと、
ウエーハの裏面を露出させてチャックテーブルに保持し、ウエーハの裏面を研削して該仕上げ厚さへと薄化するとともに該溝をウエーハの裏面に露出させることでウエーハを個々のデバイスチップに分割する研削ステップと、を備え、
該レジスト膜除去ステップでは、ウエーハのレジスト膜に薬液を噴射して吹きつけ該レジスト膜を除去するウエーハの加工方法。 - 該薬液は、アルコールである請求項1記載のウエーハの加工方法。
- 該薬液は、ジメチルスルホキシド、N−メチルピロリドン又はジプロピレングリコールメチルエーテルである請求項1記載のウエーハの加工方法。
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JP2014159840A JP2016039186A (ja) | 2014-08-05 | 2014-08-05 | ウエーハの加工方法 |
TW104120319A TW201618181A (zh) | 2014-08-05 | 2015-06-24 | 晶圓之加工方法 |
KR1020150101543A KR20160016608A (ko) | 2014-08-05 | 2015-07-17 | 웨이퍼의 가공 방법 |
CN201510472240.6A CN105336601A (zh) | 2014-08-05 | 2015-08-04 | 晶片的加工方法 |
US14/817,366 US9330976B2 (en) | 2014-08-05 | 2015-08-04 | Wafer processing method |
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JP2018137266A (ja) * | 2017-02-20 | 2018-08-30 | Sppテクノロジーズ株式会社 | プラズマ加工方法及びこの方法を用いて製造された基板 |
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JP7139065B2 (ja) * | 2018-12-03 | 2022-09-20 | 株式会社ディスコ | ウェーハの加工方法 |
JP7210100B2 (ja) * | 2018-12-03 | 2023-01-23 | 株式会社ディスコ | ウェーハの加工方法 |
CN111627797B (zh) * | 2020-06-08 | 2022-06-10 | 中国电子科技集团公司第二十四研究所 | 一种提高半导体芯片键合可靠性的处理方法 |
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JP2018137266A (ja) * | 2017-02-20 | 2018-08-30 | Sppテクノロジーズ株式会社 | プラズマ加工方法及びこの方法を用いて製造された基板 |
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TW201618181A (zh) | 2016-05-16 |
CN105336601A (zh) | 2016-02-17 |
KR20160016608A (ko) | 2016-02-15 |
US20160042996A1 (en) | 2016-02-11 |
US9330976B2 (en) | 2016-05-03 |
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