JP2017028170A - ウエーハの加工方法 - Google Patents
ウエーハの加工方法 Download PDFInfo
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- JP2017028170A JP2017028170A JP2015147126A JP2015147126A JP2017028170A JP 2017028170 A JP2017028170 A JP 2017028170A JP 2015147126 A JP2015147126 A JP 2015147126A JP 2015147126 A JP2015147126 A JP 2015147126A JP 2017028170 A JP2017028170 A JP 2017028170A
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- 238000000034 method Methods 0.000 title abstract description 44
- 238000003754 machining Methods 0.000 title abstract 6
- 238000004140 cleaning Methods 0.000 claims abstract description 99
- 230000001681 protective effect Effects 0.000 claims abstract description 63
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 19
- 239000011574 phosphorus Substances 0.000 claims abstract description 19
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 230000001678 irradiating effect Effects 0.000 claims abstract description 12
- 239000007795 chemical reaction product Substances 0.000 claims abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 72
- 238000003672 processing method Methods 0.000 claims description 61
- 229910052751 metal Inorganic materials 0.000 claims description 11
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- 235000012431 wafers Nutrition 0.000 description 194
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- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 16
- 238000012986 modification Methods 0.000 description 11
- 230000004048 modification Effects 0.000 description 11
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- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 8
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 125000003277 amino group Chemical group 0.000 description 5
- 230000032258 transport Effects 0.000 description 5
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- 239000002390 adhesive tape Substances 0.000 description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- UAOMVDZJSHZZME-UHFFFAOYSA-N diisopropylamine Chemical compound CC(C)NC(C)C UAOMVDZJSHZZME-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 239000004254 Ammonium phosphate Substances 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 229920002873 Polyethylenimine Polymers 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
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- 229910000148 ammonium phosphate Inorganic materials 0.000 description 2
- 235000019289 ammonium phosphates Nutrition 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 description 2
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- 239000000047 product Substances 0.000 description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- ZRIUUUJAJJNDSS-UHFFFAOYSA-N ammonium phosphates Chemical compound [NH4+].[NH4+].[NH4+].[O-]P([O-])([O-])=O ZRIUUUJAJJNDSS-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- 229940043279 diisopropylamine Drugs 0.000 description 1
- ZMXDDKWLCZADIW-UHFFFAOYSA-N dimethylformamide Substances CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000083 poly(allylamine) Polymers 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02076—Cleaning after the substrates have been singulated
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/14—Protective coatings, e.g. hard coatings
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02098—Cleaning only involving lasers, e.g. laser ablation
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
- H01L2223/5446—Located in scribe lines
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
実施形態に係るウエーハの加工方法を図面を参照して説明する。図1は、実施形態に係るウエーハの加工方法の加工対象であるウエーハの斜視図であり、図2は、図1に示されたウエーハの要部の側面図である。ウエーハ(被加工物)Wは、図1に示すように、円板状の基板WSを有する半導体ウエーハや光デバイスウエーハである。また、ウエーハWは、基板WSがリン化合物(InP:インジウムリン)からなる。ウエーハWは、図1及び図2に示すように、基板WS(ウエーハW)の表面に複数のストリートLが格子状に形成されているとともに、複数のストリートLによって区画された複数の領域にそれぞれデバイスDが形成されている。また、ウエーハWのデバイスDは、該デバイスDの表面からそれぞれ突出して形成された複数のバンプBP(金属電極に相当)が形成されている。これらのバンプBPは、例えば、金(Au)もしくは白金(Pt)などの貴金属により形成されている。なお、各デバイスDに形成されたバンプBPの数、位置、及び、大きさは、図1に示すものに限るものではなく、デバイスDの表面に露出して配置されていれば、バンプBPの数、位置及び大きさを適宜に変更することができる。また、実施形態では、金属電極の一例としてバンプBPを示しているが、本発明は、金属電極としてデバイスDの表面と例えば面一に形成された電極を用いても良い。
実施形態の変形例に係るウエーハの加工方法を図面を参照して説明する。図15は、実施形態の変形例に係るウエーハの加工方法の異物除去工程を説明する断面図である。なお、図15において、実施形態と同一部分には、同一符号を付して説明を省略する。
WS 基板
L ストリート
D デバイス
BP バンプ(金属電極)
P 水溶性保護膜
LB レーザー光
PD レーザー加工溝
ST1 ウエーハを保持する工程
ST2 保護膜形成工程
ST3 レーザー光照射工程
ST4 洗浄工程
ST6 異物除去工程
Claims (4)
- リン化合物からなる基板の表面に格子状に形成された複数のストリートによって区画された複数の領域にデバイスおよび金属電極が形成されたウエーハをストリートに沿ってレーザー加工するウエーハの加工方法であって、
前記ウエーハを保持する工程と、
前記ウエーハ表面に水溶性保護膜を形成する保護膜形成工程と、
前記ストリートに沿って前記ウエーハにレーザー光を照射するレーザー光照射工程と、
前記レーザー光を照射した後前記ウエーハを洗浄して前記保護膜を除去する洗浄工程と、を有し、
前記洗浄工程後に前記レーザー光照射工程によりレーザー加工部に生成したリンを含む反応生成物が気化して空気中の水分と反応して前記金属電極上にリンを含む異物が生成し、前記洗浄工程後であって所定時間経過後に前記異物を除去する異物除去工程と、を
備えるウエーハの加工方法。 - 前記異物除去工程において、前記ウエーハ表面を水で洗浄して異物を除去する請求項1に記載のウエーハの加工方法。
- 前記異物除去工程において、前記ウエーハを水中に浸漬して異物を除去する請求項1に記載のウエーハの加工方法。
- 前記異物除去工程において、前記ウエーハをエッチングして異物を除去する請求項1に記載のウエーハの加工方法。
Priority Applications (3)
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JP2015147126A JP6570910B2 (ja) | 2015-07-24 | 2015-07-24 | ウエーハの加工方法 |
TW105119570A TWI690983B (zh) | 2015-07-24 | 2016-06-22 | 晶圓之加工方法 |
US15/215,125 US9620355B2 (en) | 2015-07-24 | 2016-07-20 | Wafer processing method |
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JP2015147126A JP6570910B2 (ja) | 2015-07-24 | 2015-07-24 | ウエーハの加工方法 |
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JP2017028170A true JP2017028170A (ja) | 2017-02-02 |
JP6570910B2 JP6570910B2 (ja) | 2019-09-04 |
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US (1) | US9620355B2 (ja) |
JP (1) | JP6570910B2 (ja) |
TW (1) | TWI690983B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018190902A (ja) * | 2017-05-10 | 2018-11-29 | 株式会社ディスコ | 加工方法 |
JP2019197793A (ja) * | 2018-05-09 | 2019-11-14 | 株式会社ディスコ | ウェーハの分割方法 |
Families Citing this family (3)
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JP6887722B2 (ja) * | 2016-10-25 | 2021-06-16 | 株式会社ディスコ | ウェーハの加工方法及び切削装置 |
CN108817700B (zh) * | 2018-09-04 | 2020-08-14 | 京东方科技集团股份有限公司 | 保护膜及激光切割方法 |
DE102021125237A1 (de) | 2021-09-29 | 2023-03-30 | Infineon Technologies Ag | Wafer-chuck für eine laserstrahl-waferzerteilanlage |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004188475A (ja) * | 2002-12-13 | 2004-07-08 | Disco Abrasive Syst Ltd | レーザー加工方法 |
WO2006035864A1 (ja) * | 2004-09-30 | 2006-04-06 | Shin-Etsu Handotai Co., Ltd. | Soiウエーハの洗浄方法 |
US20070123061A1 (en) * | 2005-11-25 | 2007-05-31 | Advanced Laser Separation International B.V. | Method of treating a substrate, method of processing a substrate using a laser beam, and arrangement |
JP2008181941A (ja) * | 2007-01-23 | 2008-08-07 | Covalent Materials Corp | 金属系不純物の除去方法 |
JP2013058707A (ja) * | 2011-09-09 | 2013-03-28 | Hitachi Cable Ltd | 半導体発光素子の製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2008314A4 (en) * | 2006-04-18 | 2009-12-30 | Epivalley Co Ltd | SEMICONDUCTOR LIGHT EMITTING DEVICE OF NITRIDE III TYPE AND METHOD FOR PRODUCING SAME |
JP2010012508A (ja) | 2008-07-07 | 2010-01-21 | Disco Abrasive Syst Ltd | 保護膜被覆装置及びレーザー加工装置 |
US8216867B2 (en) * | 2009-06-10 | 2012-07-10 | Cree, Inc. | Front end scribing of light emitting diode (LED) wafers and resulting devices |
DE102011054891B4 (de) * | 2011-10-28 | 2017-10-19 | Osram Opto Semiconductors Gmbh | Verfahren zum Durchtrennen eines Halbleiterbauelementverbunds |
US9330994B2 (en) * | 2014-03-28 | 2016-05-03 | Stats Chippac, Ltd. | Semiconductor device and method of forming RDL and vertical interconnect by laser direct structuring |
JP2016136579A (ja) * | 2015-01-23 | 2016-07-28 | 株式会社東芝 | 半導体装置及びその製造方法 |
-
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004188475A (ja) * | 2002-12-13 | 2004-07-08 | Disco Abrasive Syst Ltd | レーザー加工方法 |
WO2006035864A1 (ja) * | 2004-09-30 | 2006-04-06 | Shin-Etsu Handotai Co., Ltd. | Soiウエーハの洗浄方法 |
US20070123061A1 (en) * | 2005-11-25 | 2007-05-31 | Advanced Laser Separation International B.V. | Method of treating a substrate, method of processing a substrate using a laser beam, and arrangement |
JP2008181941A (ja) * | 2007-01-23 | 2008-08-07 | Covalent Materials Corp | 金属系不純物の除去方法 |
JP2013058707A (ja) * | 2011-09-09 | 2013-03-28 | Hitachi Cable Ltd | 半導体発光素子の製造方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018190902A (ja) * | 2017-05-10 | 2018-11-29 | 株式会社ディスコ | 加工方法 |
JP2019197793A (ja) * | 2018-05-09 | 2019-11-14 | 株式会社ディスコ | ウェーハの分割方法 |
JP7068028B2 (ja) | 2018-05-09 | 2022-05-16 | 株式会社ディスコ | ウェーハの分割方法 |
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