JP6506651B2 - ウエーハの加工方法 - Google Patents
ウエーハの加工方法 Download PDFInfo
- Publication number
- JP6506651B2 JP6506651B2 JP2015150048A JP2015150048A JP6506651B2 JP 6506651 B2 JP6506651 B2 JP 6506651B2 JP 2015150048 A JP2015150048 A JP 2015150048A JP 2015150048 A JP2015150048 A JP 2015150048A JP 6506651 B2 JP6506651 B2 JP 6506651B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- protective film
- chemical solution
- amino group
- laser beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000003672 processing method Methods 0.000 title description 7
- 238000012545 processing Methods 0.000 claims description 73
- 230000001681 protective effect Effects 0.000 claims description 66
- 239000000126 substance Substances 0.000 claims description 59
- 238000004140 cleaning Methods 0.000 claims description 39
- 125000003277 amino group Chemical group 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 38
- 229910052698 phosphorus Inorganic materials 0.000 claims description 29
- 239000011574 phosphorus Substances 0.000 claims description 29
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 23
- 150000001875 compounds Chemical class 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 9
- 230000001678 irradiating effect Effects 0.000 claims description 6
- -1 phosphorus compound Chemical class 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 description 138
- 239000000243 solution Substances 0.000 description 51
- 239000007788 liquid Substances 0.000 description 39
- 239000011347 resin Substances 0.000 description 33
- 229920005989 resin Polymers 0.000 description 33
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 30
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 20
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 18
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 12
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 10
- 239000004254 Ammonium phosphate Substances 0.000 description 8
- 229910000148 ammonium phosphate Inorganic materials 0.000 description 8
- 235000019289 ammonium phosphates Nutrition 0.000 description 8
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 description 8
- 238000012546 transfer Methods 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 229940079593 drug Drugs 0.000 description 7
- 239000003814 drug Substances 0.000 description 7
- UAOMVDZJSHZZME-UHFFFAOYSA-N diisopropylamine Chemical compound CC(C)NC(C)C UAOMVDZJSHZZME-UHFFFAOYSA-N 0.000 description 6
- 229920002451 polyvinyl alcohol Polymers 0.000 description 6
- 238000005406 washing Methods 0.000 description 6
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 5
- 239000004372 Polyvinyl alcohol Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 229920002873 Polyethylenimine Polymers 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 2
- 229940043279 diisopropylamine Drugs 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 2
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 2
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- 229910020888 Sn-Cu Inorganic materials 0.000 description 1
- 229910019204 Sn—Cu Inorganic materials 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- ZMXDDKWLCZADIW-UHFFFAOYSA-N dimethylformamide Substances CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000083 poly(allylamine) Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/18—Working by laser beam, e.g. welding, cutting or boring using absorbing layers on the workpiece, e.g. for marking or protecting purposes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Ceramic Engineering (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
図5は、第1実施形態に係るウエーハの加工方法の手順を示すフローチャートである。まず、加工手順としては、未加工のウエーハWをスピンナテーブル51に保持する(ステップS1)。具体的には、レーザー加工装置1のカセット30に収容されたレーザー加工前のウエーハWを、搬出入手段41を用いてカセット30から一枚取り出し、このウエーハWを一対のレール42上に載置する。この一対のレール42上に載置されたウエーハWは、第1の搬送手段61により、保護膜形成兼洗浄部50のスピンナテーブル51に搬送される。スピンナテーブル51では、吸着チャック51aに載置されたウエーハWを吸引することで該ウエーハWが保持される。
図10は、第2実施形態に係るウエーハの加工方法の手順を示すフローチャートである。第1実施形態で説明した手順と同一の手順については説明を省略する。まず、未加工のウエーハWをスピンナテーブル51に保持する(ステップS1)。次に、ウエーハWの表面にアミノ基を有する薬液を含む保護膜を形成する(ステップSa2:保護膜形成工程、アミノ基を有する薬液を供給する工程)。このアミノ基を有する薬液を供給する工程は、レーザー光線照射工程(ステップS3)の前に行われる。この第2実施形態では、保護膜を形成する際に、水溶性の液状樹脂とアミノ基を有する薬液とを供給している。具体的には、図11に示すように、樹脂液・薬液供給ノズル55をウエーハWの上方に配置し、スピンナテーブル51を所定の回転数で回転させた状態で、樹脂液・薬液供給ノズル55から水溶性の液状樹脂(例えば、PVA(ポリビニルアルコール))70とアミノ基を有する薬液(例えば、MEA(モノエタノールアミン))71とをウエーハWに供給する。この場合、液状樹脂70とアミノ基を有する薬液71とが所定量の比率で混合するように、切替弁を調整しても良いし、予め液状樹脂70とアミノ基を有する薬液71とを混合した混合液を樹脂液・薬液供給ノズル55から供給しても良い。この構成では、液状樹脂70が乾燥により固化することにより、アミノ基を有する薬液71を含む保護膜P(図7)がウエーハWの表面に形成される。
発明者は、上記したアミノ基を有する薬液の他にも、比較例として他の薬品を用いて実験している。具体的には、薬品として(1)IPA(イソプロピルアルコール)と(2)液体窒素(N2)を用いて、上記した第1実施形態のステップS5において、水溶性のアミノ基を有する薬液(例えば、MEA(モノエタノールアミン))に替えて、上記した(1)、(2)の薬品をそれぞれウエーハWに供給した。その他の手順は、ステップS5を除いて、ステップS1〜ステップS7と同一である。これらの比較例では、(1)IPA(イソプロピルアルコール)、(2)液体窒素(N2)を用いたいずれの手順によってもリンを含む異物(リン酸(H3PO4))の生成が認められた。これは、(1)IPA(イソプロピルアルコール)、(2)液体窒素(N2)がいずれもリンと水溶性の化合物を生成しないため、時間経過とともにリンを含む異物(リン酸(H3PO4))が生成されたものと考えられる。このように、アミノ基を有する薬液を用いてウエーハの表面を処理することは、ウエーハの表面への異物の発生を効果的に抑制するために非常に有効である。
10 チャックテーブル
20 レーザー光線照射部
21 発振器
22 集光器
30 カセット
40 仮置き部
50 保護膜形成兼洗浄部
51 スピンナテーブル
51a 吸着チャック
53 水受け部
55 樹脂液・薬液供給ノズル
56 エアーノズル
57 洗浄水ノズル
61 第1の搬送手段
62 第2の搬送手段
70 液状樹脂
71 薬液
100 レーザー加工溝
BP バンプ(金属電極)
D デバイス
F 環状フレーム
L ストリート
P 保護膜
T 粘着テープ
W ウエーハ
WS 基板
Claims (2)
- リン化合物からなる基板の表面に格子状に形成された複数のストリートによって区画された複数の領域にデバイスおよび該表面に金属電極が形成されたウエーハを前記ストリートに沿ってレーザー加工するウエーハの加工方法であって、
前記ウエーハを保持する工程と、
前記ウエーハの表面に水溶性の保護膜を形成する保護膜形成工程と、
前記保護膜形成工程の後に、前記ストリートに沿って前記ウエーハにレーザー光を照射するレーザー光照射工程と、
前記ウエーハにアミノ基を有する薬液を供給する工程と、を備え、
前記薬液の供給により該ウエーハ上に生成したリンを含む化合物を洗浄除去する除去工程をさらに備えるウエーハの加工方法。 - 前記ウエーハにアミノ基を有する薬液を供給する工程は、前記レーザー光照射工程の前に行われ、水溶性の保護膜にアミノ基を有する薬液を混入させ、前記ウエーハの表面に供給する請求項1に記載のウエーハの加工方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015150048A JP6506651B2 (ja) | 2015-07-29 | 2015-07-29 | ウエーハの加工方法 |
TW105119569A TWI694505B (zh) | 2015-07-29 | 2016-06-22 | 晶圓之加工方法 |
US15/219,499 US9748119B2 (en) | 2015-07-29 | 2016-07-26 | Wafer processing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015150048A JP6506651B2 (ja) | 2015-07-29 | 2015-07-29 | ウエーハの加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017034007A JP2017034007A (ja) | 2017-02-09 |
JP6506651B2 true JP6506651B2 (ja) | 2019-04-24 |
Family
ID=57883043
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015150048A Active JP6506651B2 (ja) | 2015-07-29 | 2015-07-29 | ウエーハの加工方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9748119B2 (ja) |
JP (1) | JP6506651B2 (ja) |
TW (1) | TWI694505B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017065084A1 (ja) * | 2015-10-14 | 2017-04-20 | オリンパス株式会社 | 内視鏡用光源装置及び内視鏡システム |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4571850B2 (ja) * | 2004-11-12 | 2010-10-27 | 東京応化工業株式会社 | レーザーダイシング用保護膜剤及び該保護膜剤を用いたウエーハの加工方法 |
TWI377247B (en) * | 2007-12-28 | 2012-11-21 | Epoch Material Co Ltd | Aqueous cleaning composition |
JP5852303B2 (ja) * | 2010-06-30 | 2016-02-03 | 富士フイルム株式会社 | 金属膜表面の酸化防止方法及び酸化防止液 |
JP2012023085A (ja) * | 2010-07-12 | 2012-02-02 | Disco Abrasive Syst Ltd | 光デバイスウエーハの加工方法 |
JP2012119539A (ja) * | 2010-12-01 | 2012-06-21 | Ulvac Japan Ltd | ラジカルクリーニング方法及びラジカルクリーニング装置 |
JP2013091069A (ja) * | 2011-10-24 | 2013-05-16 | V Technology Co Ltd | レーザ加工装置及びレーザ加工方法 |
US9076860B1 (en) * | 2014-04-04 | 2015-07-07 | Applied Materials, Inc. | Residue removal from singulated die sidewall |
-
2015
- 2015-07-29 JP JP2015150048A patent/JP6506651B2/ja active Active
-
2016
- 2016-06-22 TW TW105119569A patent/TWI694505B/zh active
- 2016-07-26 US US15/219,499 patent/US9748119B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TWI694505B (zh) | 2020-05-21 |
US20170032985A1 (en) | 2017-02-02 |
TW201724226A (zh) | 2017-07-01 |
US9748119B2 (en) | 2017-08-29 |
JP2017034007A (ja) | 2017-02-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102493116B1 (ko) | 웨이퍼의 분할 방법 | |
JP6570910B2 (ja) | ウエーハの加工方法 | |
JP5133855B2 (ja) | 保護膜の被覆方法 | |
WO2019176589A1 (ja) | 基板処理システム、基板処理方法及びコンピュータ記憶媒体 | |
JP5324180B2 (ja) | レーザ加工方法およびレーザ加工装置 | |
JP6739873B2 (ja) | ウェーハの加工方法 | |
JP2004322168A (ja) | レーザー加工装置 | |
JP6770858B2 (ja) | 分割方法 | |
JP5881464B2 (ja) | ウェーハのレーザー加工方法 | |
JP2007073670A (ja) | 水溶性樹脂被覆方法 | |
JP2008130818A (ja) | レーザー加工装置 | |
JP2007201178A (ja) | レーザー加工装置 | |
US9847257B2 (en) | Laser processing method | |
JP2010267638A (ja) | 保護膜の被覆方法及びウエーハのレーザ加工方法 | |
CN108028195A (zh) | 基板处理方法、基板处理装置以及存储介质 | |
JP6506651B2 (ja) | ウエーハの加工方法 | |
JP2006198450A (ja) | 保護被膜の被覆方法 | |
JP6585422B2 (ja) | レーザー加工方法 | |
JP2019096812A (ja) | 被加工物の加工方法 | |
JP2022054537A (ja) | ウエーハの加工方法 | |
TW202422684A (zh) | 基板處理系統及基板處理方法 | |
TW202422683A (zh) | 基板處理方法及基板處理系統 | |
TW202421321A (zh) | 改質層形成裝置及基板處理方法 | |
KR20230071058A (ko) | 웨이퍼의 가공 방법 및 패키지 디바이스의 제조 방법 | |
JPWO2020050041A1 (ja) | 基板処理方法および基板処理システム |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180515 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190225 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190305 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190329 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6506651 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |