TW202213481A - 晶圓的加工方法 - Google Patents

晶圓的加工方法 Download PDF

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TW202213481A
TW202213481A TW110135343A TW110135343A TW202213481A TW 202213481 A TW202213481 A TW 202213481A TW 110135343 A TW110135343 A TW 110135343A TW 110135343 A TW110135343 A TW 110135343A TW 202213481 A TW202213481 A TW 202213481A
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横尾晋
高橋宏行
和田健太郎
渡邊義雄
岡崎健志
西田吉輝
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日商迪思科股份有限公司
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Abstract

[課題] 提供即便施予電漿蝕刻分割成裝置晶片，也不會使氟元素殘留於切割膠帶，能夠解決在後工程成為汙染源的問題的晶圓的加工方法。 [解決手段] 一種晶圓的加工方法，包含：在晶圓的上面被覆水溶性樹脂並在於晶圓與框之間露出的切割膠帶被覆水溶性樹脂(P)且固化形成樹脂膜的樹脂膜被覆工程；從晶圓的應分割的區域除去樹脂膜部分地使晶圓的上面露出的部分樹脂膜除去工程；在晶圓的應分割的區域施予電漿蝕刻將晶圓分割成各個晶片的蝕刻工程、洗淨框單元將樹脂膜全部除去的全部樹脂膜除去工程。

Description

晶圓的加工方法
本發明係有關於藉由使用氟氣的電漿蝕刻將晶圓分割成各個裝置晶片的晶圓的加工方法。
IC、LSI等複數裝置藉由交叉的複數分割預定線畫分而在表面形成的晶圓，藉由切割裝置分割成各個裝置晶片，被分割的裝置晶片利用於行動電話、電腦等電機器。
又，為了使裝置晶片的抗折強度提升，本申請人提案以使分割預定線露出的遮罩被覆晶圓的上面，藉由氟系氣體將分割預定線進行電漿蝕刻將晶圓分割成各個裝置晶片的技術(參照專利文獻1)。 [先前技術文獻] [專利文獻]
[專利文獻1] 特開2006-108428號公報
[發明所欲解決的問題]
上述專利文獻1記載的技術中，於在中央具備收容晶圓的開口部的環狀框的該開口部定位晶圓，並將切割膠帶貼附於晶圓的下面與環狀框形成框單元，之後，將晶圓的上面以遮罩被覆施予電漿蝕刻將晶圓分割成裝置晶片。藉此，能夠將分割成各個裝置晶片的晶圓高效率地搬送。
藉由上述技術分割晶圓時，實施電漿蝕刻時產生的氟元素附著於具有黏著層的切割膠帶，即便進行洗淨也無法完全除去，會在切割膠帶上殘留。因此，將藉由切割膠帶保持晶圓的框單元搬送至後工程後，有該切割膠帶成為包含氟元素的汙染源的問題。
因此，本發明的目的為提供即便施予電漿蝕刻分割成裝置晶片，也不會使氟元素殘留於切割膠帶，能夠解決在後工程成為汙染源的問題的晶圓的加工方法。 [解決問題的手段]
根據本發明，提供一種晶圓的加工方法，係藉由使用氟氣的電漿蝕刻將晶圓分割成各個裝置晶片的晶圓的加工方法，具備：於在中央具備收容晶圓的開口部的環狀框的該開口部定位晶圓，並將切割膠帶貼附於該晶圓的下面與該環狀框形成框單元的框單元形成工程；在該晶圓的上面被覆水溶性樹脂，並於在該晶圓與該環狀框之間露出的該切割膠帶被覆水溶性樹脂且固化形成樹脂膜的樹脂膜被覆工程；從該晶圓的應分割區域除去該樹脂膜部分地使該晶圓的上面露出的部分樹脂膜除去工程；在該晶圓的應分割區域施予電漿蝕刻將該晶圓分割成各個晶片的蝕刻工程；洗淨該框單元將該樹脂膜全部除去的全部樹脂膜除去工程。
較佳為該氟氣由SF 6、CF 4、C 2F 6及C 2F 4的任一者選擇出，該晶圓，藉由交叉的複數分割預定線畫分複數裝置，形成於上面。 [發明的效果]
根據本發明的晶圓的加工方法，氟元素被樹脂膜捕獲而藉由洗淨與樹脂一同被除去，不會在切割膠帶附著，解決了框單元成為汙染源的問題。
以下，關於本發明實施形態的晶圓的加工方法，參照附圖並詳細說明。
圖1示出在本實施形態中成為被加工物的晶圓10。晶圓10，例如，為IC、LSI等複數裝置12藉由交叉的複數分割預定線14被畫分而在表面10a形成的矽晶圓。實施本實施形態的晶圓的加工方法時，準備在中央具備收容該晶圓10的開口部Fa的環狀框(以下，單稱為框)F，在框F的開口部Fa定位晶圓10並將切割膠帶T貼附於晶圓10的下面10b與框F一體化形成框單元18(框單元形成工程)。
接著，在晶圓10的上面(本實施形態中為表面10a)被覆水溶性樹脂並於在晶圓10與框F之間露出的切割膠帶T被覆水溶性樹脂且固化形成樹脂膜(樹脂膜被覆工程)。
關於上述樹脂膜被覆工程，參照圖2、圖3更具體說明。實施該樹脂膜被覆工程時，將上述框單元18搬送至圖2所示的旋轉塗佈機20。
如圖2所示般，旋轉塗佈機20具備載台機構21、包圍載台機構21的覆蓋部30。此外，圖2為旋轉塗佈機20的斜視圖，在說明的方便上，將構成覆蓋部30的液覆蓋31的正前側的一部分省略表示。從圖2可理解，載台機構21具備保持框單元18的載台22。載台22，藉由以具有通氣性的多孔構件形成的吸盤221、及圍繞吸盤221的框部222構成，吸盤221連接至省略圖示的吸引源供應吸引負壓。再來，載台機構21具備軸部24，經由收容於軸部24內部的旋轉軸(圖示省略)連接至驅動源25。該旋轉軸藉由收容於驅動源25內的電動馬達(圖示省略)驅動，旋轉驅動載台22。在驅動源25的外周配設複數空氣活塞26，藉由使桿26a在以圖中箭頭所示的上下方向進退，使載台22、軸部24、及驅動源25一體升降。前述軸部24、及驅動源25作為支持載台22的基台發揮作用 。
在液覆蓋31內側的底面31a，配設排出在液覆蓋31內側噴射的液體的排液孔32，在排液孔32連接將該液體排出至配設於液覆蓋31外部的廢棄槽(圖示省略)的排液管33。再來，於液覆蓋31的底面31a，以包圍載台22的方式，配設對保持於載台22的晶圓10上面將水溶性樹脂(例如，聚乙烯醇(PVA))以液狀供應的水溶性樹脂供應噴嘴34、對晶圓10上面噴射空氣的空氣噴射噴嘴35、及從晶圓10上面噴射洗淨液的洗淨液供應噴嘴36。前述水溶性樹脂供應噴嘴34、空氣噴射噴嘴35、及洗淨液供應噴嘴36，藉由使配設於液覆蓋31的底面31a的裏面側的驅動機構(圖示省略)作動，能夠使各噴嘴的前端部在載台22的上方於水平方向移動。如圖2所示，載台22在位於將晶圓10搬入、或搬出的位置(上升位置)的狀態下，水溶性樹脂供應噴嘴34、空氣噴射噴嘴35、及洗淨液供應噴嘴36位於外周側方向的收納位置。
搬送至旋轉塗佈機20的框單元18，如圖3所示，載置於載台22上，藉由使省略圖示的吸引源作動進行吸引保持。若使框單元18吸引保持，則使空氣活塞26作動，如圖3所示使框單元18下降至被加工位置。接著，驅動配設於驅動源25內部的電動馬達，使框單元18在箭頭R1所示的方向以預定旋轉速度(例如300rpm)旋轉，並使水溶性樹脂供應噴嘴34在圖中箭頭R2所示的方向(水平方向)擺動同時噴射水溶性樹脂P，對晶圓10的上面(表面10a)、及在晶圓10與框F之間露出的切割膠帶T上供應預定量的液狀水溶性樹脂P(例如，PVA)。此外，圖示雖省略，但在旋轉塗佈機20上方配設蓋構件，從水溶性樹脂供應噴嘴34、空氣噴射噴嘴35、及洗淨液供應噴嘴36噴射液體、空氣等時，藉由該蓋體將覆蓋部30上方閉塞。
如同上述，在晶圓10上面、及切割膠帶T上塗佈水溶性樹脂P，藉由離心力對晶圓10上面全體均勻供應後，並經過預定時間，藉此該液狀水溶性樹脂P會固化，如圖3的下方側所示般，形成被覆晶圓10的上面、與在晶圓10及框F之間露出的切割膠帶T的樹脂膜P’。藉由以上，樹脂膜被覆工程結束。
接著，實施從晶圓10的應分割區域(本實施形態中為分割預定線14)除去樹脂膜P’部分地使晶圓10的上面(表面10a)露出的部分樹脂膜除去工程。參照圖4同時說明關於該部分樹脂膜除去工程。
藉由實施樹脂膜被覆工程而在晶圓10上面、及切割膠帶T上形成樹脂膜P’的框單元18，被搬送至圖4(a)所示的雷射加工裝置40(僅表示一部分)。雷射加工裝置40，至少具備保持框單元18的保持吸盤(圖示省略)、及使該吸盤進行旋轉驅動，且在X軸方向及Y軸方向移動的移動機構(圖示省略)、對準單元(圖示省略)、及雷射光線照射單元41。雷射光線照射單元41，具備出射雷射光線LB並調整該雷射光線LB的輸出，導至集光器42的光學系統(圖示省略)。
搬送至雷射加工裝置400的框單元18，被載置於該吸盤進行吸引保持。接著，使該移動機構作動，使框單元18的晶圓10移動至該對準單元的正下方，藉由該對準單元攝像晶圓10，並檢出預定的雷射加工位置(分割預定線14)。接著，使該移動機構作動，使框單元18移動至雷射光線照射單元41的集光器42的正下方，使集光點位於被覆於晶圓10的表面10a的分割預定線14上的樹脂膜P’，使晶圓10移動至圖中X軸方向，同時沿著分割預定線14照射雷射光線LB。此時照射的雷射光線LB，為被樹脂膜P’吸收的波長，設定成不會將晶圓10的表面10a進行剝離加工的程度的輸出。
藉由照射上述雷射光線LB，如圖4(b)所示，從晶圓10中應分割的區域亦即分割預定線14上將樹脂膜P’除去，沿著分割預定線14形成露出晶圓10的表面10a的露出溝100。若沿著形成於第1方向的預定分割預定線14形成該露出溝100，則使該移動機構作動，將晶圓10在Y軸方向進行分度進給，進行上述雷射光線LB的照射，沿著形成於第1方向的全部分割預定線14形成露出溝100。接著，使該吸盤90度旋轉，使沿著垂直於先形成露出溝100的分割預定線14的第2方向的分割預定線14在X軸方向整合，跟上述一樣，依沿著第2方向的全部分割預定線14照射雷射光線LB形成露出溝100。藉由以上，沿著在晶圓10的表面10a形成的全部分割預定線14形成露出溝100，部分樹脂膜除去工程結束。
若實施上述部分樹脂膜除去工程，則接著實施沿著晶圓10的應分割區域亦即分割預定線14施予電漿蝕刻，將晶圓10分割成各個晶片的蝕刻工程。參照圖5，同時更具體說明關於該蝕刻工程。
若如同上述實施部分樹脂膜除去工程，則如圖5(a)所示般，將框單元18搬送至省略詳細圖示的電漿裝置50。電漿裝置50能夠使用習知的電漿裝置。例如，電漿裝置50，具備形成密閉空間的蝕刻腔室、配設於蝕刻腔室內的上部電極及下部電極、在蝕刻腔室內中從上部電極朝向下部電極側噴出蝕刻氣體的氣體供應單元等(圖示都省略)。其中，在該上部電極與該下部電極間，將施予部分樹脂膜除去工程的框單元18的晶圓10的表面10a側朝向上方載置並保持，對蝕刻腔室內作為蝕刻氣體供應氟系氣體並對上部電極施加使電漿產生的高頻電力。此外，氟系氣體，例如從SF 6、CF 4、C 2F 6、C 2F 4中任一者中選擇供應。
接著，在上部電極與下部電極之間的空間，使電漿化的蝕刻氣體產生，將電漿化的蝕刻氣體供應至晶圓10側。其中，經由上述部分樹脂膜除去工程並被搬送至電漿裝置50的框單元18，除了上述露出溝100的區域藉由樹脂膜P’保護。藉此，在上述電漿裝置50中，如圖5(b)所示般，沿著露出溝100，亦即，沿著分割預定線14施予電漿蝕刻，形成到達切割膠帶T的分割溝110，晶圓10被分割成各個裝置晶片12’，蝕刻工程結束。
若實施上述蝕刻工程，則實施洗淨框單元18將樹脂膜P’全部除去的全部樹脂膜除去工程。參照圖6，同時更具體說明關於該全部樹脂膜除去工程。
將施予圖6的右上方所示的蝕刻工程的框單元18，搬送至前述旋轉塗佈機20，將晶圓10的表面10a側朝向上方載置於載台機構21，進行吸引保持。接著，驅動配設於驅動源25的電動馬達，使載台機構21在箭頭R3所示的方向以預定旋轉速度(例如300rpm)旋轉，並使洗淨液供應噴嘴36在圖中箭頭R4所示的方向(水平方向)擺動，對晶圓10的上面(表面10a)、及切割膠帶T上，將洗淨液L(例如純水)在預定時間之間噴射。藉此，被覆在晶圓10、及切割膠帶T上的樹脂膜P’溶融並排出至液覆蓋31內。溶融並排出的樹脂膜P’，在液覆蓋31的底面31a流動，經由排液孔32、排液管33收容於預定的廢棄槽。接著，使洗淨液供應噴嘴36退避至收容位置，使空氣噴射噴嘴35作動，使空氣噴射噴嘴35的前端，移動至晶圓10上的中央區域將空氣朝向晶圓10的表面10a側噴射在水平方向擺動(圖示省略)，同時使載台機構21高速旋轉(例如3000rpm)，使包含晶圓10的表面10a的框單元18上乾燥，全部樹脂膜除去工程結束。藉由實施該全部樹脂膜除去工程，在框單元18上殘留之氟元素被溶融的樹脂膜P’捕獲一起排出，不會附著於切割膠帶T而經由排液管33收容於該廢棄槽。
如同上述般若實施全部樹脂膜除去工程，則如圖6的右下方側所示，從旋轉塗佈機20將框單元18搬出，下個工程，例如，從框單元18將分割成各個的裝置晶片12’搬送至拾取之拾取裝置。此時，在晶圓10上、及切割膠帶T上，不會殘留氟元素，解決了汙染實施後工程的區域的汙染源的問題。
10:晶圓 10a:表面 10b:裏面 12:裝置 14:分割預定線 18:框單元 20:旋轉塗佈機 21:載台機構 22:載台 221:吸盤 222:框部 24:軸部 25:驅動源 26:活塞 26a:桿 30:覆蓋部 31:液覆蓋 31a:底面 32:排液孔 33:排液管 34:水溶性樹脂供應噴嘴 35:空氣噴射噴嘴 36:洗淨液供應噴嘴 100:露出溝 110:分割溝 F:框 Fa:開口部 T:切割膠帶 P0:水溶性樹脂 P:樹脂膜
[圖1]表示框單元形成工程的實施態樣的斜視圖。 [圖2]旋轉塗佈機的斜視圖。 [圖3]表示樹脂膜被覆工程的實施態樣的斜視圖。 [圖4](a)表示部分樹脂膜除去工程的實施態樣的斜視圖、(b)實施(a)表示的部分樹脂膜除去工程的狀態的晶圓的一部分擴大剖面圖。 [圖5](a)表示蝕刻工程的實施態樣的斜視圖、(b)實施(a)表示的蝕刻工程的狀態的晶圓的一部分擴大剖面圖。 [圖6]表示全部樹脂膜除去工程的實施態樣的斜視圖。
10:晶圓
10a:表面
12:裝置
12’:裝置晶片
14:分割預定線
18:框單元
50:電漿裝置
100:露出溝
110:分割溝
F:框
P’:樹脂膜
T:切割膠帶

Claims (2)

  1. 一種晶圓的加工方法，係藉由使用氟氣的電漿蝕刻將晶圓分割成各個裝置晶片的晶圓的加工方法，具備： 於在中央具備收容晶圓的開口部的環狀框的該開口部定位晶圓，並將切割膠帶貼附於該晶圓的下面與該環狀框形成框單元的框單元形成工程； 在該晶圓的上面被覆水溶性樹脂，並於在該晶圓與該環狀框之間露出的該切割膠帶被覆水溶性樹脂且固化形成樹脂膜的樹脂膜被覆工程； 從該晶圓的應分割區域除去該樹脂膜部分地使該晶圓的上面露出的部分樹脂膜除去工程； 在該晶圓的應分割區域施予電漿蝕刻將該晶圓分割成各個晶片的蝕刻工程； 洗淨該框單元將該樹脂膜全部除去的全部樹脂膜除去工程。
  2. 如請求項1記載的晶圓的加工方法，其中，該氟氣由SF 6、CF 4、C 2F 6及C 2F 4組成的群選擇出，該晶圓，藉由分割預定線畫分複數裝置，形成於上面。
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