CN114334814A - 晶片的加工方法 - Google Patents

晶片的加工方法 Download PDF

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CN114334814A
CN114334814A CN202111098074.XA CN202111098074A CN114334814A CN 114334814 A CN114334814 A CN 114334814A CN 202111098074 A CN202111098074 A CN 202111098074A CN 114334814 A CN114334814 A CN 114334814A
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横尾晋
高桥宏行
和田健太郎
渡边义雄
冈崎健志
西田吉辉
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Abstract

本发明提供晶片的加工方法，即使实施等离子蚀刻而分割成器件芯片，也不会使氟元素残留在划片带上，能够消除在后续工序中成为污染源的问题。晶片的加工方法包含如下的工序：树脂膜覆盖工序，在晶片的上表面上覆盖水溶性树脂并且在露出于晶片与框架之间的划片带上覆盖水溶性树脂(P)，并使水溶性树脂固化，从而形成树脂膜；局部树脂膜去除工序，从晶片的待分割的区域将树脂膜去除而使晶片的上表面局部地露出；蚀刻工序，对晶片的待分割的区域实施等离子蚀刻而将晶片分割成各个芯片；以及全部树脂膜去除工序，对框架单元进行清洗而将树脂膜全部去除。

Description

晶片的加工方法
技术领域
本发明涉及晶片的加工方法，通过使用了氟系气体的等离子蚀刻将晶片分割成各个器件芯片。
背景技术
通过切割装置将由交叉的多条分割预定线划分而在正面上形成有IC、LSI等多个器件的晶片分割成各个器件芯片，分割得到的器件芯片被用于移动电话、个人计算机等电子设备。
另外，为了提高器件芯片的抗折强度，本申请人提出了如下的技术：利用使分割预定线露出的掩模将晶片的上表面覆盖，通过氟系气体对分割预定线进行等离子蚀刻从而将晶片分割成各个器件芯片(参照专利文献1)。
专利文献1：日本特开2006-108428号公报
在上述的专利文献1所记载的技术中，将晶片定位于在中央具有对晶片进行收纳的开口部的环状框架的该开口部中，并且将划片带粘贴在晶片的下表面和环状框架上而形成框架单元，然后利用掩模将晶片的上表面覆盖而实施等离子蚀刻从而将晶片分割成器件芯片。由此，能够高效地搬送被分割成各个器件芯片的晶片。
在利用上述技术对晶片进行了分割的情况下，实施等离子蚀刻时所产生的氟元素会附着在具有粘接层的划片带上，即使进行清洗也无法完全去除而是会残留于划片带。因此，当将借助划片带而保持着晶片的框架单元搬送至后续工序时，存在该划片带会成为包含氟元素的污染源的问题。
发明内容
因此，本发明的目的在于提供晶片的加工方法，即使实施等离子蚀刻而分割成器件芯片，也不会使氟元素残留于划片带，能够解决在后续工序中成为污染源的问题。
根据本发明，提供一种晶片的加工方法，通过使用了氟系气体的等离子蚀刻将晶片分割成各个器件芯片，其中，该晶片的加工方法具有如下的工序：框架单元形成工序，将晶片定位于在中央具有对晶片进行收纳的开口部的环状框架的该开口部中并且将划片带粘贴在该晶片的下表面和该环状框架上而形成框架单元；树脂膜覆盖工序，在该晶片的上表面上覆盖水溶性树脂并且在露出于该晶片与该环状框架之间的该划片带上覆盖水溶性树脂，并使水溶性树脂固化，从而形成树脂膜；局部树脂膜去除工序，从该晶片的待分割的区域将该树脂膜去除而使该晶片的上表面局部地露出；蚀刻工序，对该晶片的待分割的区域实施等离子蚀刻而将该晶片分割成各个芯片；以及全部树脂膜去除工序，对该框架单元进行清洗而将该树脂膜全部去除。
优选该氟系气体从SF6、CF4、C2F6和C2F4中的任意一个中选择，晶片在上表面上由分割预定线划分而形成有多个器件。
根据本发明的晶片的加工方法，氟元素被树脂膜捕获而通过清洗与树脂一起被去除，不会附着于划片带，消除了框架单元成为污染源的问题。
附图说明
图1是示出框架单元形成工序的实施方式的立体图。
图2是旋涂机的立体图。
图3是示出树脂膜覆盖工序的实施方式的立体图。
图4的(a)是示出局部树脂膜去除工序的实施方式的立体图，图4的(b)是实施图4的(a)所示的局部树脂膜去除工序的状态的晶片的局部放大剖视图。
图5的(a)是示出蚀刻工序的实施方式的立体图，图5的(b)是实施图5的(a)所示的蚀刻工序的状态的晶片的局部放大剖视图。
图6是示出全部树脂膜去除工序的实施方式的立体图。
标号说明
10：晶片；10a：正面；10b：背面；12：器件；14：分割预定线；18：框架单元；20：旋涂机；21：工作台机构；22：工作台；221：吸附卡盘；222：框部；24：轴部；25：驱动源；26：空气活塞；26a：杆；30：罩部；31：液体罩；31a：底面；32：排放孔；33：排放软管；34：水溶性树脂提供喷嘴；35：空气喷射喷嘴；36：清洗液提供喷嘴；100：露出槽；110：分割槽；F：框架；Fa：开口部；T：划片带；P：水溶性树脂；P’：树脂膜。
具体实施方式
以下，参照附图对本发明实施方式的晶片的加工方法进行详细说明。
在图1中示出了在本实施方式中成为被加工物的晶片10。晶片10例如是在正面10a上由交叉的多条分割预定线14划分而形成有IC、LSI等多个器件12的硅晶片。在实施本实施方式的晶片的加工方法时，准备在中央具有对该晶片10进行收纳的开口部Fa的环状框架(以下，简称为框架)F，将晶片10定位于框架F的开口部Fa中，并且将划片带T粘贴在晶片10的下表面10b和框架F上而进行一体化，形成框架单元18(框架单元形成工序)。
接着，在晶片10的上表面(在本实施方式中为正面10a)上覆盖水溶性树脂，并且在露出于晶片10与框架F之间的划片带T上覆盖水溶性树脂并固化而形成树脂膜(树脂膜覆盖工序)。
参照图2、图3对上述的树脂膜覆盖工序进行更具体的说明。在实施该树脂膜覆盖工序时，将上述框架单元18搬送到图2所示的旋涂机20。
如图2所示，旋涂机20具有工作台机构21和包围工作台机构21的罩部30。需要说明的是，图2是旋涂机20的立体图，为了便于说明，将构成罩部30的液体罩31的近前侧的一部分切开而示出。从图2可知，工作台机构21具有对框架单元18进行保持的工作台22。工作台22由具有通气性的多孔部件形成的吸附卡盘221和围绕吸附卡盘221的框部222构成，吸附卡盘221与省略图示的吸引源连接而被提供吸引负压。并且，工作台机构21具有轴部24，经由收纳于轴部24的内部的旋转轴(省略图示)而与驱动源25连接。该旋转轴被收纳于驱动源25内的电动机(省略图示)驱动，对工作台22进行旋转驱动。在驱动源25的外周配设有多个空气活塞26，通过使杆26a在图中箭头所示的上下方向上进退，使工作台22、轴部24以及驱动源25一体地升降。上述的轴部24和驱动源25作为对工作台22进行支承的基台发挥功能。
在液体罩31的内侧的底面31a上配设有将喷射到液体罩31的内侧的液体排出的排放孔32，在排放孔32上连接有将该液体向配设在液体罩31的外部的废弃容器(省略图示)排放的排放软管33。并且，在液体罩31的底面31a上，以包围工作台22的方式配设有：水溶性树脂提供喷嘴34，其向工作台22所保持的晶片10的上表面以液态提供水溶性树脂(例如聚乙烯醇(PVA))；空气喷射喷嘴35，其向晶片10的上表面喷射空气；以及清洗液提供喷嘴36，其向晶片10的上表面喷射清洗液。关于上述的水溶性树脂提供喷嘴34、空气喷射喷嘴35以及清洗液提供喷嘴36，通过使配设于液体罩31的底面31a的背面侧的驱动单元(省略图示)进行动作，能够使各喷嘴的前端部在工作台22的上方沿水平方向移动。如图2所示，在将工作台22定位于将晶片10搬入或搬出的位置(上升位置)的状态下，水溶性树脂提供喷嘴34、空气喷射喷嘴35以及清洗液提供喷嘴36定位于外周侧方向的收纳位置。
如图3所示，将搬送至旋涂机20的框架单元18载置于工作台22上，通过使省略图示的吸引源进行动作而进行吸引保持。在对框架单元18进行吸引保持后，使空气活塞26进行动作，使框架单元18下降至图3所示的被加工位置。接着，对配设于驱动源25的内部的电动机进行驱动，使框架单元18沿箭头R1所示的方向以规定的旋转速度(例如为300rpm)旋转，并且一边使水溶性树脂提供喷嘴34沿图中箭头R2所示的方向(水平方向)摆动一边喷射水溶性树脂P，向晶片10的上表面(正面10a)和露出于晶片10与框架F之间的划片带T上提供规定量的液态的水溶性树脂P(例如PVA)。此外，虽然省略了图示，但在旋涂机20的上方配设有盖部件，在从水溶性树脂提供喷嘴34、空气喷射喷嘴35以及清洗液提供喷嘴36喷射液体、空气等的情况下，利用该盖体将罩部30的上方封闭。
如上所述，在晶片10的上表面和划片带T上涂布水溶性树脂P，该液态的水溶性树脂P在通过离心力而均匀地提供至晶片10的整个上表面上之后，经过规定的时间而固化，如图3的下方侧所示，形成将晶片10的上表面和露出于晶片10与框架F之间的划片带T覆盖的树脂膜P’。通过以上步骤，树脂膜覆盖工序完成。
接着，实施局部树脂膜去除工序，从晶片10的待分割的区域(在本实施方式中为分割预定线14)将树脂膜P’去除而使晶片10的上表面(正面10a)局部地露出。参照图4，对该局部树脂膜去除工序进行说明。
将实施了树脂膜覆盖工序而在晶片10的上表面和划片带T上形成有树脂膜P’的框架单元18搬送至图4的(a)所示的激光加工装置40(仅示出了一部分)。激光加工装置40至少具有：卡盘工作台(省略图示)，其对框架单元18进行保持；移动机构(省略图示)，其对该卡盘工作台进行旋转驱动，并且使该卡盘工作台在X轴方向和Y轴方向上移动；对准单元(省略图示)；以及激光光线照射单元41。激光光线照射单元41具有射出激光光线LB并调整该激光光线LB的输出而将激光光线LB向聚光器42引导的光学系统(省略图示)。
将搬送至激光加工装置40的框架单元18载置于该卡盘工作台上而进行吸引保持。接着，使该移动机构进行动作，使框架单元18的晶片10移动至该对准单元的正下方，利用该对准单元对晶片10进行拍摄，检测规定的激光加工位置(分割预定线14)。接着，使该移动机构进行动作，使框架单元18移动至激光光线照射单元41的聚光器42的正下方，将聚光点定位在覆盖在晶片10的正面10a的分割预定线14上的树脂膜P’上，一边使晶片10在图中X轴方向上移动，一边沿着分割预定线14照射激光光线LB。此时照射的激光光线LB是被树脂膜P’吸收的波长，按照成为不对晶片10的正面10a进行烧蚀加工的程度的输出的方式进行设定。
通过照射上述的激光光线LB，如图4的(b)所示，在晶片10中，从待分割的区域即分割预定线14上将树脂膜P’去除，沿着分割预定线14形成使晶片10的正面10a露出的露出槽100。在沿着在第1方向上形成的规定的分割预定线14形成了该露出槽100之后，使该移动机构进行动作，在Y轴方向上对晶片10进行分度进给，进行上述的激光光线LB的照射，沿着在第1方向上形成的所有分割预定线14形成露出槽100。接着，使该卡盘工作台旋转90度，使沿着与先形成了露出槽100的分割预定线14垂直的第2方向的分割预定线14与X轴方向对齐，与上述同样地，沿着第2方向的所有分割预定线14照射激光光线LB而形成露出槽100。通过以上，沿着形成在晶片10的正面10a上的所有分割预定线14形成露出槽100，完成局部树脂膜去除工序。
在实施了上述的局部树脂膜去除工序之后，接下来实施蚀刻工序，沿着晶片10的待分割的区域即分割预定线14实施等离子蚀刻，将晶片10分割成各个芯片。参照图5，对该蚀刻工序进行更具体的说明。
在如上述那样实施了局部树脂膜去除工序之后，如图5的(a)所示，将框架单元18向省略详细图示的等离子装置50搬送。等离子装置50能够使用公知的等离子装置。例如，等离子装置50具有：形成密闭空间的蚀刻腔室；配置在蚀刻腔室内的上部电极和下部电极；以及在蚀刻腔室内从上部电极朝向下部电极侧喷出蚀刻气体的气体提供单元等(均省略图示)。在此，将实施了部分树脂膜去除工序的框架单元18的晶片10的正面10a侧朝向上方而载置并保持在该上部电极与该下部电极之间，并向蚀刻腔室内提供作为蚀刻气体的氟系气体，并且对上部电极施加产生等离子的高频电力。其中，氟系气体例如可以从SF6、CF4、C2F6和C2F4的任意气体中选择提供。
然后，在上部电极与下部电极之间的空间中产生等离子化的蚀刻气体，向晶片10侧提供等离子化的蚀刻气体。在此，关于经过上述的局部树脂膜去除工序而被搬送至等离子装置50的框架单元18，除了上述的露出槽100以外的区域由树脂膜P’进行保护。由此，在上述的等离子装置50中，如图5的(b)所示，沿着露出槽100即沿着分割预定线14实施等离子蚀刻而形成到达划片带T的分割槽110，晶片10被分割成各个器件芯片12’，蚀刻工序完成。
在实施了上述的蚀刻工序之后，实施对框架单元18进行清洗而将树脂膜P’全部去除的全部树脂膜去除工序。参照图6，对该全部树脂膜去除工序进行更具体的说明。
将图6的右上方所示的实施了蚀刻工序的框架单元18搬送至前述的旋涂机20，使晶片10的正面10a侧朝向上方而载置于工作台机构21，并进行吸引保持。接着，对配设于驱动源25的电动机进行驱动，使工作台机构21在箭头R3所示的方向上以规定的旋转速度(例如为300rpm)旋转，并且使清洗液提供喷嘴36在图中箭头R4所示的方向(水平方向)上摆动，在规定的时间期间向晶片10的上表面(正面10a)和划片带T上喷射清洗液L(例如纯水)。由此，晶片10和覆盖在划片带T上的树脂膜P’溶融而向液体罩31内排出。溶融并排出的树脂膜P’在液体罩31的底面31a上流动，经由排放孔32、排放软管33而被收纳于规定的废弃容器。接着，使清洗液提供喷嘴36退避至收纳位置，使空气喷射喷嘴35进行动作，使空气喷射喷嘴35的前端移动至晶片10上的中央区域，一边朝向晶片10的正面10a侧喷射空气而使空气喷射喷嘴35在水平方向上摆动(省略图示)，一边使工作台机构21高速旋转(例如3000rpm)，使包含晶片10的正面10a在内的框架单元18上干燥，完成全部树脂膜去除工序。通过实施该全部树脂膜去除工序，残留在框架单元18上的氟元素被溶融的树脂膜P’捕获而一起排出，不会附着于划片带T上而是经由排放软管33而收纳于该废弃容器中。
在如上述那样实施了全部树脂膜去除工序之后，如图6的右下方侧所示，将框架单元18从旋涂机20搬出，在接下来的工序中，例如，将框架单元18搬送至拾取装置，该拾取装置从框架单元18拾取已被一个个地分割的器件芯片12’。此时，在晶片10上和划片带T上未残留氟元素，解决了成为对实施后续工序的区域造成污染的污染源的问题。

Claims (2)

1.一种晶片的加工方法，通过使用了氟系气体的等离子蚀刻将晶片分割成各个器件芯片，其中，
该晶片的加工方法具有如下的工序：
框架单元形成工序，将晶片定位于在中央具有对晶片进行收纳的开口部的环状框架的该开口部中并且将划片带粘贴在该晶片的下表面和该环状框架上而形成框架单元；
树脂膜覆盖工序，在该晶片的上表面上覆盖水溶性树脂并且在露出于该晶片与该环状框架之间的该划片带上覆盖水溶性树脂，并使水溶性树脂固化，从而形成树脂膜；
局部树脂膜去除工序，从该晶片的待分割的区域将该树脂膜去除而使该晶片的上表面局部地露出；
蚀刻工序，对该晶片的待分割的区域实施等离子蚀刻而将该晶片分割成各个芯片；以及
全部树脂膜去除工序，对该框架单元进行清洗而将该树脂膜全部去除。
2.根据权利要求1所述的晶片的加工方法，其中，
该氟系气体从由SF6、CF4、C2F6和C2F4构成的组中选择，
该晶片在上表面上由分割预定线划分而形成有多个器件。
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