JP2011086637A - 照明装置 - Google Patents
照明装置 Download PDFInfo
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- JP2011086637A JP2011086637A JP2011008412A JP2011008412A JP2011086637A JP 2011086637 A JP2011086637 A JP 2011086637A JP 2011008412 A JP2011008412 A JP 2011008412A JP 2011008412 A JP2011008412 A JP 2011008412A JP 2011086637 A JP2011086637 A JP 2011086637A
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- guide plate
- light
- light guide
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- light source
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Images
Classifications
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- G02B6/0013—Means for improving the coupling-in of light from the light source into the light guide
- G02B6/0023—Means for improving the coupling-in of light from the light source into the light guide provided by one optical element, or plurality thereof, placed between the light guide and the light source, or around the light source
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Planar Illumination Modules (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
【解決手段】(1)点光源を線状の導光板により線光源に変換し、さらに面状の導光板で面光源に変換する。(2)点光源をランプリフレクタで反射し、面状の導光板の少なくとも二つの側面から入射する。(3)上面が直方形の面状の導光板を、上面から見て、この直方形の一辺に対し45°の線で切断する。除去後の、上面から見て5角形である面状の導光板において他辺に対し45°となる辺を一辺とする側面の手前に点光源を配置する。
【選択図】図1
Description
そして、光源が発光する光は平板状の導光板の内部で全反射を繰り返しながら、平板状の導光板の全域に行き渡る。図20(A)〜図20(B)は平板状の導光板の内部での光の伝播を示す断面図であり、平板状の導光板105の厚み方向の断面を示している。なお、光の伝播を説明するにあたって平板状の導光板の六つの面を図19(A)の斜視図に定義する。観測者側の面を上面735とする。上面に対向する面を下面736とする。光源737から発光される光が入射する側面を端面738とする。端面に対し直交する面を側面739とする。残りの側面を、端面に平行な面740とする。
光源203が点灯していると、光源203を出射した光206が、ランプリフレクタ204で反射され、平板状の導光板202の端面213に入射する。そして平板状の導光板202に入射した光206は、プリズムの側面で表面反射されて反射型の液晶電気光学装置201に入射する。反射型の液晶電気光学装置により反射された光は、臨界角より小さい角度で平板状の導光板と空気との界面に入射し平板状の導光板の外に出る。
実施形態1は、本発明を透過型の液晶電気光学装置のバックライトに適用した例を示すものである。実施形態1を図1により説明する。
実施形態2は、本発明を反射型液晶電気光学装置のフロントライトに適用した例を示すものである。発光ダイオードによる点光源を線状の導光板により線光源にするところが特徴である。
〜図7(B)に示す。図7(A)〜図7(B)の断面図は図6の斜視図を鎖線E−E’で切断したものである。図7(A)〜図7(B)は平板状の導光板、線状の導光板及び反射型の液晶電気光学装置の側面から見た光の伝播を示す。
本発明を実施形態3で説明する。本実施形態は平板状の導光板の形状に特徴がある。本実施例は平板状の導光板において光が入射する第1の側面を、平板導光板の他の側面に対し45°の角度となるようにする。発光ダイオード等の点光源は第1の側面の手前にある。
の斜視図のように定義する。観測者側の面を上面741とする。上面に対向する面を下面742とする。残りの面を側面743とする。図10〜図11を用いた説明はこの定義に基づいてされている。
このため図11(B)に示すように、表示領域512の全域に光が広がる。
本実施形態では、点光源を線光源に変換し、線光源を面光源に変換する照明装置において実施形態1に比べて照明装置の小型化を図るものである。本実施形態を図29を用いて説明をする。図29は本実施形態のバックライトの光の伝播を説明する断面図である。
ただし、第1の導光板の屈折率が高すぎると、全反射により第1の導光板から出射し、第2の導光板の内部へと入射する光の量が減るため、第1の導光板の屈折率は3.0以下とすることが好ましい。本実施形態では第1の導光板の屈折率を2.0とする。
例えば、プラズマCVD法でSiH4、NH3、N2Oから作製される酸化窒化シリコン膜801を10〜200nm(好ましくは90〜100nm)形成し、同様にSiH4、N2Oから作製される酸化窒化水素化シリコン膜802を90〜200nm(好ましくは100〜190nm)の厚さに積層形成する。本実施例では下地膜を2層構造として示したが、前記絶縁膜の単層膜または2層以上積層させた構造として形成しても良い。
の厚さで形成する。結晶質半導体膜の材料に限定はないが、好ましくはシリコンまたはシリコンゲルマニウム(SiGe)合金などで形成すると良い。
そして幅100〜1000μm、例えば800μmで線状に集光したレーザー光を基板全面に渡って照射し、この時の線状レーザー光の重ね合わせ率(オーバーラップ率)を80〜98%として行う。
ゲート絶縁膜807はプラズマCVD法またはスパッタ法を用い、厚さを80〜190nmとしてシリコンを含む絶縁膜で形成する。本実施例では、120nmの厚さの酸化窒化シリコン膜で形成する。勿論、ゲート絶縁膜はこのような酸化窒化シリコン膜に限定されるものでなく、他のシリコンを含む絶縁膜を単層または積層構造として用いても良い。例えば、酸化シリコン膜を用いる場合には、プラズマCVD法でTEOS(Tetraethyl Orthosilicate)とO2とを混合し、反応圧力80Pa、基板温度300〜800℃とし、高周波(13.56MHz)電力密度0.5〜0.8W/cm2で放電させて形成することができる。このようにして作製される酸化シリコン膜は、その後800〜900℃の熱アニールによりゲート絶縁膜として良好な特性を得ることができる。
第三の不純物領域(850〜858)のn型不純物の濃度は1×1020〜1×1022atoms/cm3となるようにする。第四の不純物領域(866〜867)のn型不純物の濃度は第三の不純物領域の濃度より低く、第二の不純物領域の濃度より高くなる。
第一の層間絶縁膜864の膜厚は100〜200nmとする。
スペーサーの高さは4μmとする。
本願発明は表示装置9702に適用することができる。
Claims (5)
- 導光板と、点光源と、反射板と、を有し、
前記導光板は、互いに接する第1の側面及び第2の側面と、前記第1の側面及び前記第2の側面に接する上面と、前記第1の側面及び前記第2の側面に接して前記上面と対向する下面と、を有し、
前記点光源は、前記第1の側面及び前記第2の側面により形成される角の近傍に設けられ、
前記点光源からの光は、前記第1の側面又は前記第2の側面に入射し、
前記反射板は、前記下面の下方に設けられ、
前記下面は、構造物が設けられた領域を有し、
前記下面は、前記光が全反射する領域を有し、
前記光は、前記上面から射出されることを特徴とする照明装置。 - 請求項1において、
前記点光源の周りに、反射性を有する部材が形成されていることを特徴とする照明装置。 - 請求項1又は2において、
前記構造物は、インクドット、凹凸、三角形の断面を有するプリズム、又は直方形若しくは正方形の断面を有する突起であることを特徴とする照明装置。 - 請求項1乃至3のいずれか一項において、
前記点光源は、発光ダイオードであることを特徴とする照明装置。 - 請求項1乃至4のいずれか一項において、
前記導光板は、アクリル樹脂からなることを特徴とする照明装置。
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Also Published As
Publication number | Publication date |
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JP6415640B2 (ja) | 2018-10-31 |
US8042984B2 (en) | 2011-10-25 |
US20130299836A1 (en) | 2013-11-14 |
JP2012134176A (ja) | 2012-07-12 |
US20090316069A1 (en) | 2009-12-24 |
JP2010212264A (ja) | 2010-09-24 |
JP2018132783A (ja) | 2018-08-23 |
US20140367690A1 (en) | 2014-12-18 |
US20120037964A1 (en) | 2012-02-16 |
JP2019201213A (ja) | 2019-11-21 |
US7204635B2 (en) | 2007-04-17 |
JP2014143204A (ja) | 2014-08-07 |
US8829529B2 (en) | 2014-09-09 |
US9704996B2 (en) | 2017-07-11 |
JP6613337B2 (ja) | 2019-11-27 |
US20010030860A1 (en) | 2001-10-18 |
JP2015165507A (ja) | 2015-09-17 |
US20170309741A1 (en) | 2017-10-26 |
JP4987128B2 (ja) | 2012-07-25 |
US7594743B2 (en) | 2009-09-29 |
US20070177406A1 (en) | 2007-08-02 |
US6789910B2 (en) | 2004-09-14 |
US8487315B2 (en) | 2013-07-16 |
JP2017175162A (ja) | 2017-09-28 |
US20050030732A1 (en) | 2005-02-10 |
JP2016106380A (ja) | 2016-06-16 |
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