JP2002541332A5 - - Google Patents
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- JP2002541332A5 JP2002541332A5 JP2000610879A JP2000610879A JP2002541332A5 JP 2002541332 A5 JP2002541332 A5 JP 2002541332A5 JP 2000610879 A JP2000610879 A JP 2000610879A JP 2000610879 A JP2000610879 A JP 2000610879A JP 2002541332 A5 JP2002541332 A5 JP 2002541332A5
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- 239000010409 thin film Substances 0.000 description 55
- 239000000376 reactant Substances 0.000 description 47
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 14
- 238000010926 purge Methods 0.000 description 12
- 229910044991 metal oxide Inorganic materials 0.000 description 10
- 150000004706 metal oxides Chemical class 0.000 description 10
- 239000002184 metal Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- JLTRXTDYQLMHGR-UHFFFAOYSA-N Trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 210000002381 Plasma Anatomy 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000005755 formation reaction Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N oxygen atom Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- OZAIFHULBGXAKX-UHFFFAOYSA-N precursor Substances N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Description
【特許請求の範囲】
【請求項1】
複数のサイクルを含むシーケンシャル化学気相成長法による薄膜成長方法において、
少なくともひとつのサイクルが、
パーツをチャンバ内にセットし、
前記パーツを、形成される薄膜を構成する元素を含むガス状の第一の反応体に接触させ、少なくとも前記第一の反応体の一部を、1層の単分子層を形成する前記パーツに吸着させ、
前記チャンバから前記ガス状の第一の反応体をパージし、
前記パーツに吸着された前記第一の反応体の一部を、原料ガス流中におけるプラズマ放電により生成されたラジカルを含むガス状の第二の反応体に、前記パーツを接触させることにより、元素と化合物のうちのどちらかに転換して、それにより薄膜を形成し、
前記原料ガスを流し続けながら、前記プラズマ放電を止めることにより、前記チャンバから、前記ガス状の第二の反応体をパージすることを含むことを特徴とする薄膜成長方法。
【請求項2】
前記原料ガスが、前記プロセス全体を通して継続的に流れていることを特徴とする請求項1に記載の薄膜成長方法。
【請求項3】
前記チャンバから前記第一の反応体をパージする処理が、前記原料ガスを流すことを含むことを特徴とする請求項1に記載の薄膜成長方法。
【請求項4】
前記原料ガスが酸素を含んでおり、前記ラジカルが酸素ラジカルを含んでいることを特徴とする請求項1に記載の薄膜成長方法。
【請求項5】
前記プラズマ放電が、前記チャンバの上流にある遠隔プラズマ発生装置において行われることを特徴とする請求項1に記載の薄膜成長方法。
【請求項6】
所望の膜厚に達するまで、前記接触、パージ、転換及びパージのプロセスを順に繰り返すことを、さらに含むことを特徴とする請求項1に記載の薄膜成長方法。
【請求項7】
前記薄膜がAl2O3を含んでおり、前記プロセスが室温で行われることを特徴とする請求項1に記載の薄膜成長方法。
【請求項8】
前記パーツが少なくともひとつの開口部を持つ半導体基板を含んで構成され、前記薄膜が前記開口部の内壁を被覆することを特徴とする請求項1に記載の薄膜成長方法。
【請求項9】
前記開口部が半導体金属被覆プロセスにおける波状模様の溝を含んで構成されていることを特徴とする請求項8に記載の薄膜成長方法。
【請求項10】
前記薄膜が銅を含んで構成されていることを特徴とする請求項9に記載の薄膜成長方法。
【請求項11】
前記第一の反応体が金属原料ガスを含んで構成され、転換が前記パーツに吸着された前記第一の反応体の一部を金属に還元することを含むことを特徴とする請求項8に記載の薄膜成長方法。
【請求項12】
転換が、前記パーツに吸着された前記第一の反応体の一部を酸素ラジカルに接触させることにより、最初の金属酸化物に転換する第一の転換と、前記最初の金属酸化物を金属に還元する第二の還元とを含むことを特徴とする請求項1に記載の薄膜成長方法。
【請求項13】
還元が、前記金属酸化物を水素ラジカルに接触させることを含むことを特徴とする請求項12に記載の薄膜成長方法。
【請求項14】
前記金属が銅を含むことを特徴とする請求項12に記載の薄膜成長方法。
【請求項15】
吸着された前記第一の反応体の一部が、金属酸化物の介在なしに直接金属に還元される別のサイクルを、さらに含むことを特徴とする請求項12に記載の薄膜成長方法。
【請求項16】
前記パーツが金属表面と非金属表面を含んでおり、そのことにより、前記最初の金属酸化物が前記パーツ上へ選択的に形成されることがないことを特徴とする請求項15に記載の薄膜成長方法。
【請求項17】
請求項12に記載のサイクルと同等の別のサイクルを、さらに含むことを特徴とする請求項12に記載の薄膜成長方法。
【請求項18】
転換が、前記パーツを、少なくとも2つの連続するパルス状の流れの前記第二の反応体に接触させ、反応副生物が前記パルス状の流れの間に、前記開口部から拡散することを含むことを特徴とする請求項8に記載の薄膜成長方法。
【請求項19】
室温で行われることを特徴とする請求項1に記載の薄膜成長方法。
【請求項20】
シーケンシャル化学気相成長法による薄膜成長方法において、
(a) 前記パーツを、前記ガス状の第一の反応体に接触させることと、前記ガス状の第二の反応体に接触させることとを交互に2回以上繰り返し、第一の物質のいくつかの単分子層からなる第一の薄膜を成長させることにより、請求項1に記載の方法によって、前記パーツ上に前記第一の薄膜を形成し、
(b) 前記パーツを、形成される第二の薄膜を構成する元素を含むガス状の第三の反応体に接触させ、少なくとも前記第三の反応体の一部を、多くても1層の単分子層を形成する自己限定的なプロセスにより前記パーツに吸着させ、
前記チャンバから前記ガス状の第三の反応体をパージし、
前記パーツに吸着された前記第三の反応体の一部を、プラズマ放電により生成したラジカルを含むガス状の第四の反応体に前記パーツを接触させることにより、元素と化合物のうちのいずれかに転換し、
前記チャンバから前記ガス状の第四の反応体をパージし、
前記パーツを、前記ガス状の第三の反応体に接触させることと、前記パーツを前記ガス状の第四の反応体に接触させることとを交互に2回以上繰り返し、第二の物質のいくつかの単分子層からなる前記第二の薄膜を形成し、
(c) 前記第一の薄膜の形成と前記第二の薄膜の形成とを交互に繰り返して直接相互の上に形成し、各物質が2層以上の単分子層の厚さである2つの異なる物質の薄層が、交互に重なった構造の複合膜を形成することを順番に含むことを特徴とする薄膜成長方法。
【請求項21】
前記第一の薄膜がAl2O3を含み、前記第二の薄膜がSi3N4を含むことを特徴とする請求項20に記載の薄膜成長方法。
【請求項22】
前記第一の薄膜と前記第二の薄膜の各々が厚さ約10Å(1nm)であることを特徴とする請求項20に記載の薄膜成長方法。
【請求項23】
複数のサイクルを含むシーケンシャル気相成長法による、基板上へのAl 2 O 3 薄膜の成長方法において、それぞれのサイクルが、
ガス状のトリメチルアルミニウム(TMA)にパーツを接触させること、
前記ガス状のTMAの供給を停止すること、
チャンバから前記ガス状のTMAを除去すること、
原子状酸素に前記パーツを接触させること、及び
前記チャンバから、前記原子状酸素を除去することを含み、
それぞれのサイクルで、1原子層以上のAl 2 O 3 層を形成することを特徴とするAl 2 O 3 薄膜の成長方法。
【請求項24】
それぞれのサイクルにおいて、厚さ3ÅのAl 2 O 3 層を形成することを特徴とする請求項23に記載のAl 2 O 3 薄膜の成長方法。
【請求項25】
ラジカル発生装置内で、遠隔的に酸素ラジカルを発生させることを特徴とする請求項23に記載のAl 2 O 3 薄膜の成長方法。
【請求項26】
室温で処理を行うことを特徴とする請求項23に記載のAl 2 O 3 薄膜の成長方法。
【請求項27】
複数のサイクルを含むシーケンシャル気相成長法による、基板上へのAl 2 O 3 薄膜の成長方法において、それぞれのサイクルが、
ガス状のトリメチルアルミニウム(TMA)にパーツを接触させること、
前記ガス状のTMAの供給を停止すること、
チャンバから前記ガス状のTMAを除去すること、及び
原子状酸素に前記パーツを接触させることを含むことを特徴とするAl 2 O 3 薄膜の成長方法。
【請求項28】
ラジカル発生装置内で、遠隔的にラジカルを発生させることを特徴とする請求項27に記載のAl 2 O 3 薄膜の成長方法。
【請求項29】
室温で処理を行うことを特徴とする請求項27に記載のAl 2 O 3 薄膜の成長方法。
【請求項30】
複数のサイクルを含むシーケンシャル化学気相成長法による薄膜成長方法において、
少なくともひとつのサイクルが、
パーツをチャンバ内にセットし、
前記パーツを、形成される薄膜を構成する元素を含むガス状の第一の反応体に接触させ、少なくとも前記第一の反応体の一部を、1層の単分子層を形成する前記パーツに吸着させ、
前記チャンバから前記ガス状の第一の反応体をパージし、
前記パーツに吸着された前記第一の反応体の一部を、プラズマ放電により生成されたラジカルを含むガス状の第二の反応体に、前記パーツを接触させることにより、元素と化合物のうちのどちらかに転換して、それにより薄膜を形成することを含み、
転換が、前記パーツに吸着された前記第一の反応体の一部を酸素ラジカルに接触させることにより、最初の金属酸化物に転換する第一の転換と、前記最初の金属酸化物を金属に還元する第二の還元とを含むことを特徴とする薄膜成長方法。
【請求項31】
還元が、前記金属酸化物を水素ラジカルに接触させることを含むことを特徴とする請求項30に記載の薄膜成長方法。
【請求項32】
前記金属が銅を含むことを特徴とする請求項30に記載の薄膜成長方法。
【請求項33】
吸着された前記第一の反応体の一部が、金属酸化物の介在なしに直接金属に還元される別のサイクルを、さらに含むことを特徴とする請求項30に記載の薄膜成長方法。
【請求項34】
前記パーツが金属表面と非金属表面とを含んでおり、そのことにより、前記最初の金属酸化物が前記パーツ上へ選択的に形成されることがないことを特徴とする請求項33に記載の薄膜成長方法。
【請求項35】
請求項1に記載のサイクルと同等の別のサイクルを、さらに含むことを特徴とする請求項30に記載の薄膜成長方法。
【請求項36】
シーケンシャル化学気相成長法による薄膜成長方法において、
パーツをチャンバ内にセットし、
(a) 前記パーツを、形成される第一の薄膜を構成する元素を含むガス状の第一の反応体に接触させ、少なくとも前記第一の反応体の一部を、1層の単分子層を形成する前記パーツに吸着させ、
前記チャンバから前記ガス状の第一の反応体をパージし、
前記パーツに吸着された前記第一の反応体の一部を、プラズマ放電により生成したラジカルを含むガス状の第二の反応体に前記パーツを接触させることにより、元素と化合物のうちのどちらかに転換し、
前記チャンバから前記ガス状の第二の反応体をパージし、
前記パーツを、前記ガス状の第一の反応体に接触させることと、前記パーツを前記ガス状の第二の反応体に接触させることとを交互に2回以上繰り返し、第一の物質のいくつかの単分子層からなる第一の薄膜を成長させることにより、前記第一の薄膜を形成し、
(b) 前記パーツを、形成される第二の薄膜を構成する元素を含むガス状の第三の反応体に接触させ、少なくとも前記第三の反応体の一部を、多くても1層の単分子層を形成する自己限定的なプロセスにより前記パーツに吸着させ、
前記チャンバから前記ガス状の第三の反応体をパージし、
前記パーツに吸着された前記第三の反応体の一部を、プラズマ放電により生成したラジカルを含むガス状の第四の反応体に前記パーツを接触させることにより、元素と化合物のうちのいずれかに転換し、
前記チャンバから前記ガス状の第四の反応体をパージし、
前記パーツを、前記ガス状の第三の反応体に接触させることと、前記パーツを前記ガス状の第四の反応体に接触させることとを交互に2回以上繰り返し、第二の物質のいくつかの単分子層からなる前記第二の薄膜を形成し、
(c) 前記第一の薄膜の形成と前記第二の薄膜の形成を交互に繰り返して直接相互の上に形成し、各物質が2層以上の単分子層の厚さである2つの異なる物質の薄層が、交互に重なった構造の複合膜を形成することを順番に含むことを特徴とする薄膜成長方法。
【請求項37】
前記第一の薄膜がAl 2 O 3 を含み、前記第二の薄膜がSi 3 N 4 を含むことを特徴とする請求項36に記載の薄膜成長方法。
【請求項38】
前記第一の薄膜と前記第二の薄膜の各々が、厚さ約10Å(1nm)であることを特徴とする請求項36に記載の薄膜成長方法。
【請求項1】
複数のサイクルを含むシーケンシャル化学気相成長法による薄膜成長方法において、
少なくともひとつのサイクルが、
パーツをチャンバ内にセットし、
前記パーツを、形成される薄膜を構成する元素を含むガス状の第一の反応体に接触させ、少なくとも前記第一の反応体の一部を、1層の単分子層を形成する前記パーツに吸着させ、
前記チャンバから前記ガス状の第一の反応体をパージし、
前記パーツに吸着された前記第一の反応体の一部を、原料ガス流中におけるプラズマ放電により生成されたラジカルを含むガス状の第二の反応体に、前記パーツを接触させることにより、元素と化合物のうちのどちらかに転換して、それにより薄膜を形成し、
前記原料ガスを流し続けながら、前記プラズマ放電を止めることにより、前記チャンバから、前記ガス状の第二の反応体をパージすることを含むことを特徴とする薄膜成長方法。
【請求項2】
前記原料ガスが、前記プロセス全体を通して継続的に流れていることを特徴とする請求項1に記載の薄膜成長方法。
【請求項3】
前記チャンバから前記第一の反応体をパージする処理が、前記原料ガスを流すことを含むことを特徴とする請求項1に記載の薄膜成長方法。
【請求項4】
前記原料ガスが酸素を含んでおり、前記ラジカルが酸素ラジカルを含んでいることを特徴とする請求項1に記載の薄膜成長方法。
【請求項5】
前記プラズマ放電が、前記チャンバの上流にある遠隔プラズマ発生装置において行われることを特徴とする請求項1に記載の薄膜成長方法。
【請求項6】
所望の膜厚に達するまで、前記接触、パージ、転換及びパージのプロセスを順に繰り返すことを、さらに含むことを特徴とする請求項1に記載の薄膜成長方法。
【請求項7】
前記薄膜がAl2O3を含んでおり、前記プロセスが室温で行われることを特徴とする請求項1に記載の薄膜成長方法。
【請求項8】
前記パーツが少なくともひとつの開口部を持つ半導体基板を含んで構成され、前記薄膜が前記開口部の内壁を被覆することを特徴とする請求項1に記載の薄膜成長方法。
【請求項9】
前記開口部が半導体金属被覆プロセスにおける波状模様の溝を含んで構成されていることを特徴とする請求項8に記載の薄膜成長方法。
【請求項10】
前記薄膜が銅を含んで構成されていることを特徴とする請求項9に記載の薄膜成長方法。
【請求項11】
前記第一の反応体が金属原料ガスを含んで構成され、転換が前記パーツに吸着された前記第一の反応体の一部を金属に還元することを含むことを特徴とする請求項8に記載の薄膜成長方法。
【請求項12】
転換が、前記パーツに吸着された前記第一の反応体の一部を酸素ラジカルに接触させることにより、最初の金属酸化物に転換する第一の転換と、前記最初の金属酸化物を金属に還元する第二の還元とを含むことを特徴とする請求項1に記載の薄膜成長方法。
【請求項13】
還元が、前記金属酸化物を水素ラジカルに接触させることを含むことを特徴とする請求項12に記載の薄膜成長方法。
【請求項14】
前記金属が銅を含むことを特徴とする請求項12に記載の薄膜成長方法。
【請求項15】
吸着された前記第一の反応体の一部が、金属酸化物の介在なしに直接金属に還元される別のサイクルを、さらに含むことを特徴とする請求項12に記載の薄膜成長方法。
【請求項16】
前記パーツが金属表面と非金属表面を含んでおり、そのことにより、前記最初の金属酸化物が前記パーツ上へ選択的に形成されることがないことを特徴とする請求項15に記載の薄膜成長方法。
【請求項17】
請求項12に記載のサイクルと同等の別のサイクルを、さらに含むことを特徴とする請求項12に記載の薄膜成長方法。
【請求項18】
転換が、前記パーツを、少なくとも2つの連続するパルス状の流れの前記第二の反応体に接触させ、反応副生物が前記パルス状の流れの間に、前記開口部から拡散することを含むことを特徴とする請求項8に記載の薄膜成長方法。
【請求項19】
室温で行われることを特徴とする請求項1に記載の薄膜成長方法。
【請求項20】
シーケンシャル化学気相成長法による薄膜成長方法において、
(a) 前記パーツを、前記ガス状の第一の反応体に接触させることと、前記ガス状の第二の反応体に接触させることとを交互に2回以上繰り返し、第一の物質のいくつかの単分子層からなる第一の薄膜を成長させることにより、請求項1に記載の方法によって、前記パーツ上に前記第一の薄膜を形成し、
(b) 前記パーツを、形成される第二の薄膜を構成する元素を含むガス状の第三の反応体に接触させ、少なくとも前記第三の反応体の一部を、多くても1層の単分子層を形成する自己限定的なプロセスにより前記パーツに吸着させ、
前記チャンバから前記ガス状の第三の反応体をパージし、
前記パーツに吸着された前記第三の反応体の一部を、プラズマ放電により生成したラジカルを含むガス状の第四の反応体に前記パーツを接触させることにより、元素と化合物のうちのいずれかに転換し、
前記チャンバから前記ガス状の第四の反応体をパージし、
前記パーツを、前記ガス状の第三の反応体に接触させることと、前記パーツを前記ガス状の第四の反応体に接触させることとを交互に2回以上繰り返し、第二の物質のいくつかの単分子層からなる前記第二の薄膜を形成し、
(c) 前記第一の薄膜の形成と前記第二の薄膜の形成とを交互に繰り返して直接相互の上に形成し、各物質が2層以上の単分子層の厚さである2つの異なる物質の薄層が、交互に重なった構造の複合膜を形成することを順番に含むことを特徴とする薄膜成長方法。
【請求項21】
前記第一の薄膜がAl2O3を含み、前記第二の薄膜がSi3N4を含むことを特徴とする請求項20に記載の薄膜成長方法。
【請求項22】
前記第一の薄膜と前記第二の薄膜の各々が厚さ約10Å(1nm)であることを特徴とする請求項20に記載の薄膜成長方法。
【請求項23】
複数のサイクルを含むシーケンシャル気相成長法による、基板上へのAl 2 O 3 薄膜の成長方法において、それぞれのサイクルが、
ガス状のトリメチルアルミニウム(TMA)にパーツを接触させること、
前記ガス状のTMAの供給を停止すること、
チャンバから前記ガス状のTMAを除去すること、
原子状酸素に前記パーツを接触させること、及び
前記チャンバから、前記原子状酸素を除去することを含み、
それぞれのサイクルで、1原子層以上のAl 2 O 3 層を形成することを特徴とするAl 2 O 3 薄膜の成長方法。
【請求項24】
それぞれのサイクルにおいて、厚さ3ÅのAl 2 O 3 層を形成することを特徴とする請求項23に記載のAl 2 O 3 薄膜の成長方法。
【請求項25】
ラジカル発生装置内で、遠隔的に酸素ラジカルを発生させることを特徴とする請求項23に記載のAl 2 O 3 薄膜の成長方法。
【請求項26】
室温で処理を行うことを特徴とする請求項23に記載のAl 2 O 3 薄膜の成長方法。
【請求項27】
複数のサイクルを含むシーケンシャル気相成長法による、基板上へのAl 2 O 3 薄膜の成長方法において、それぞれのサイクルが、
ガス状のトリメチルアルミニウム(TMA)にパーツを接触させること、
前記ガス状のTMAの供給を停止すること、
チャンバから前記ガス状のTMAを除去すること、及び
原子状酸素に前記パーツを接触させることを含むことを特徴とするAl 2 O 3 薄膜の成長方法。
【請求項28】
ラジカル発生装置内で、遠隔的にラジカルを発生させることを特徴とする請求項27に記載のAl 2 O 3 薄膜の成長方法。
【請求項29】
室温で処理を行うことを特徴とする請求項27に記載のAl 2 O 3 薄膜の成長方法。
【請求項30】
複数のサイクルを含むシーケンシャル化学気相成長法による薄膜成長方法において、
少なくともひとつのサイクルが、
パーツをチャンバ内にセットし、
前記パーツを、形成される薄膜を構成する元素を含むガス状の第一の反応体に接触させ、少なくとも前記第一の反応体の一部を、1層の単分子層を形成する前記パーツに吸着させ、
前記チャンバから前記ガス状の第一の反応体をパージし、
前記パーツに吸着された前記第一の反応体の一部を、プラズマ放電により生成されたラジカルを含むガス状の第二の反応体に、前記パーツを接触させることにより、元素と化合物のうちのどちらかに転換して、それにより薄膜を形成することを含み、
転換が、前記パーツに吸着された前記第一の反応体の一部を酸素ラジカルに接触させることにより、最初の金属酸化物に転換する第一の転換と、前記最初の金属酸化物を金属に還元する第二の還元とを含むことを特徴とする薄膜成長方法。
【請求項31】
還元が、前記金属酸化物を水素ラジカルに接触させることを含むことを特徴とする請求項30に記載の薄膜成長方法。
【請求項32】
前記金属が銅を含むことを特徴とする請求項30に記載の薄膜成長方法。
【請求項33】
吸着された前記第一の反応体の一部が、金属酸化物の介在なしに直接金属に還元される別のサイクルを、さらに含むことを特徴とする請求項30に記載の薄膜成長方法。
【請求項34】
前記パーツが金属表面と非金属表面とを含んでおり、そのことにより、前記最初の金属酸化物が前記パーツ上へ選択的に形成されることがないことを特徴とする請求項33に記載の薄膜成長方法。
【請求項35】
請求項1に記載のサイクルと同等の別のサイクルを、さらに含むことを特徴とする請求項30に記載の薄膜成長方法。
【請求項36】
シーケンシャル化学気相成長法による薄膜成長方法において、
パーツをチャンバ内にセットし、
(a) 前記パーツを、形成される第一の薄膜を構成する元素を含むガス状の第一の反応体に接触させ、少なくとも前記第一の反応体の一部を、1層の単分子層を形成する前記パーツに吸着させ、
前記チャンバから前記ガス状の第一の反応体をパージし、
前記パーツに吸着された前記第一の反応体の一部を、プラズマ放電により生成したラジカルを含むガス状の第二の反応体に前記パーツを接触させることにより、元素と化合物のうちのどちらかに転換し、
前記チャンバから前記ガス状の第二の反応体をパージし、
前記パーツを、前記ガス状の第一の反応体に接触させることと、前記パーツを前記ガス状の第二の反応体に接触させることとを交互に2回以上繰り返し、第一の物質のいくつかの単分子層からなる第一の薄膜を成長させることにより、前記第一の薄膜を形成し、
(b) 前記パーツを、形成される第二の薄膜を構成する元素を含むガス状の第三の反応体に接触させ、少なくとも前記第三の反応体の一部を、多くても1層の単分子層を形成する自己限定的なプロセスにより前記パーツに吸着させ、
前記チャンバから前記ガス状の第三の反応体をパージし、
前記パーツに吸着された前記第三の反応体の一部を、プラズマ放電により生成したラジカルを含むガス状の第四の反応体に前記パーツを接触させることにより、元素と化合物のうちのいずれかに転換し、
前記チャンバから前記ガス状の第四の反応体をパージし、
前記パーツを、前記ガス状の第三の反応体に接触させることと、前記パーツを前記ガス状の第四の反応体に接触させることとを交互に2回以上繰り返し、第二の物質のいくつかの単分子層からなる前記第二の薄膜を形成し、
(c) 前記第一の薄膜の形成と前記第二の薄膜の形成を交互に繰り返して直接相互の上に形成し、各物質が2層以上の単分子層の厚さである2つの異なる物質の薄層が、交互に重なった構造の複合膜を形成することを順番に含むことを特徴とする薄膜成長方法。
【請求項37】
前記第一の薄膜がAl 2 O 3 を含み、前記第二の薄膜がSi 3 N 4 を含むことを特徴とする請求項36に記載の薄膜成長方法。
【請求項38】
前記第一の薄膜と前記第二の薄膜の各々が、厚さ約10Å(1nm)であることを特徴とする請求項36に記載の薄膜成長方法。
前記膜は一度に1層の単分子層として堆積させられるので、前記パーツ上にできる前記膜は、下地の形状と同形で均一の厚さを持つ傾向がある。本発明では、多くのパーツを同時に被覆できる安価な反応器を使用することができる。3元素の膜を形成するためには、プロセスサイクルの中に、さらに第三の反応体を導入するプロセスを加える。化合物膜がいくつの元素を含んでいても、それらの元素を含むガス状前駆体を使って該元素の単分子層を成長させることにより、安定した化合物膜が形成できる。このような前駆体は、例えばハロゲン化物や有機金属化合物であってもよい。
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-
1999
- 1999-04-14 US US09/291,807 patent/US6342277B1/en not_active Expired - Lifetime
-
2000
- 2000-04-14 KR KR1020077024853A patent/KR100853008B1/ko active IP Right Grant
- 2000-04-14 DE DE60012733T patent/DE60012733T2/de not_active Expired - Lifetime
- 2000-04-14 EP EP00922268A patent/EP1183406B1/en not_active Expired - Lifetime
- 2000-04-14 EP EP04011039A patent/EP1462542A1/en not_active Withdrawn
- 2000-04-14 KR KR1020017013036A patent/KR100771257B1/ko active IP Right Grant
- 2000-04-14 KR KR1020097005959A patent/KR100966088B1/ko active IP Right Grant
- 2000-04-14 KR KR1020087005410A patent/KR20080025768A/ko active Search and Examination
- 2000-04-14 KR KR1020077014845A patent/KR100818792B1/ko active IP Right Grant
- 2000-04-14 WO PCT/US2000/010267 patent/WO2000061833A1/en active IP Right Grant
- 2000-04-14 JP JP2000610879A patent/JP4804628B2/ja not_active Expired - Lifetime
-
2001
- 2001-05-24 US US09/866,156 patent/US6652924B2/en not_active Expired - Lifetime
- 2001-10-09 US US09/974,162 patent/US6616986B2/en not_active Expired - Lifetime
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2003
- 2003-10-10 US US10/683,727 patent/US7682657B2/en not_active Expired - Fee Related
- 2003-10-22 US US10/692,243 patent/US7410671B2/en not_active Expired - Fee Related
-
2007
- 2007-11-30 US US11/948,794 patent/US20080066680A1/en not_active Abandoned
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2008
- 2008-07-22 US US12/177,730 patent/US8323737B2/en not_active Expired - Fee Related
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2011
- 2011-04-05 JP JP2011083429A patent/JP5554742B2/ja not_active Expired - Lifetime
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