BRPI0922795A2 - alta taxa de deposição de filmes finos com propriedades de camada de barreira melhorada - Google Patents
alta taxa de deposição de filmes finos com propriedades de camada de barreira melhoradaInfo
- Publication number
- BRPI0922795A2 BRPI0922795A2 BRPI0922795A BRPI0922795A BRPI0922795A2 BR PI0922795 A2 BRPI0922795 A2 BR PI0922795A2 BR PI0922795 A BRPI0922795 A BR PI0922795A BR PI0922795 A BRPI0922795 A BR PI0922795A BR PI0922795 A2 BRPI0922795 A2 BR PI0922795A2
- Authority
- BR
- Brazil
- Prior art keywords
- barrier layer
- thin films
- deposition rate
- high deposition
- layer properties
- Prior art date
Links
- 230000004888 barrier function Effects 0.000 title 1
- 230000008021 deposition Effects 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Chemical Vapour Deposition (AREA)
- Wrappers (AREA)
- Physical Vapour Deposition (AREA)
- Laminated Bodies (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12038108P | 2008-12-05 | 2008-12-05 | |
US16128709P | 2009-03-18 | 2009-03-18 | |
PCT/US2009/067024 WO2010065966A2 (en) | 2008-12-05 | 2009-12-07 | High rate deposition of thin films with improved barrier layer properties |
Publications (1)
Publication Number | Publication Date |
---|---|
BRPI0922795A2 true BRPI0922795A2 (pt) | 2018-05-29 |
Family
ID=42231418
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BRPI0922795A BRPI0922795A2 (pt) | 2008-12-05 | 2009-12-07 | alta taxa de deposição de filmes finos com propriedades de camada de barreira melhorada |
Country Status (7)
Country | Link |
---|---|
US (1) | US20100143710A1 (pt) |
EP (1) | EP2364380A4 (pt) |
JP (1) | JP2012511106A (pt) |
KR (1) | KR20110100618A (pt) |
CN (1) | CN102239278A (pt) |
BR (1) | BRPI0922795A2 (pt) |
WO (1) | WO2010065966A2 (pt) |
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DE602007014190D1 (de) | 2006-03-26 | 2011-06-09 | Lotus Applied Technology Llc | Atomlagenabscheidungssystem und verfahren zur beschichtung von flexiblen substraten |
EP2488678B1 (en) | 2009-10-14 | 2019-01-16 | Lotus Applied Technology, LLC | Inhibiting excess precursor transport between separate precursor zones in an atomic layer deposition system |
US8637123B2 (en) * | 2009-12-29 | 2014-01-28 | Lotus Applied Technology, Llc | Oxygen radical generation for radical-enhanced thin film deposition |
CN103119198B (zh) * | 2010-07-23 | 2015-08-19 | 莲花应用技术有限责任公司 | 接触用于辊到辊薄膜沉积的柔性网片基材单侧的基材传送机构 |
JP5864089B2 (ja) | 2010-08-25 | 2016-02-17 | 日亜化学工業株式会社 | 発光装置の製造方法 |
WO2012032343A1 (en) | 2010-09-07 | 2012-03-15 | Sun Chemical B.V. | A carbon dioxide barrier coating |
JP5682372B2 (ja) * | 2011-02-07 | 2015-03-11 | ソニー株式会社 | 電池用セパレータ、電池用セパレータの製造方法、電池、電池パックおよび電子機器 |
CN103459665B (zh) * | 2011-03-29 | 2017-02-22 | 凸版印刷株式会社 | 卷绕成膜装置 |
JP6204911B2 (ja) * | 2011-07-11 | 2017-09-27 | ロータス アプライド テクノロジー エルエルシーLotus Applied Technology, Llc | 混合金属酸化物バリアフィルム及び混合金属酸化物バリアフィルムを形成する原子層成膜方法 |
JP5803488B2 (ja) * | 2011-09-22 | 2015-11-04 | 凸版印刷株式会社 | 原子層堆積法によるフレキシブル基板への成膜方法及び成膜装置 |
CN102514280B (zh) * | 2011-12-12 | 2015-02-04 | 武汉理工大学 | 一种太阳能选择性吸收涂层的制备方法 |
KR20140144243A (ko) * | 2012-03-23 | 2014-12-18 | 피코순 오와이 | 원자층 증착 방법 및 장치 |
JP6119745B2 (ja) | 2012-05-31 | 2017-04-26 | 凸版印刷株式会社 | 巻き取り成膜装置 |
KR101372309B1 (ko) * | 2012-08-07 | 2014-03-13 | (주)씨엔원 | 롤투롤 방식의 원자층 증착 장비 및 원자층 증착 방법 |
TWI592310B (zh) * | 2012-10-18 | 2017-07-21 | 凸版印刷股份有限公司 | 積層體、阻氣薄膜及其製造方法 |
US9631275B2 (en) * | 2012-11-30 | 2017-04-25 | Lg Chem, Ltd. | Device for forming a layer |
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CN104134756A (zh) * | 2013-04-30 | 2014-11-05 | 成均馆大学校产学协力团 | 多层封装薄膜 |
EP3213341A4 (en) * | 2014-10-17 | 2018-08-29 | Lotus Applied Technology, LLC | High-speed deposition of mixed oxide barrier films |
EP3234216A2 (en) * | 2014-12-19 | 2017-10-25 | Fujifilm Manufacturing Europe BV | Transparent sheet materials |
JP5795427B1 (ja) * | 2014-12-26 | 2015-10-14 | 竹本容器株式会社 | 被膜付き樹脂容器の製造方法及び樹脂容器被覆装置 |
CH710826A1 (de) * | 2015-03-06 | 2016-09-15 | Fofitec Ag | Vorrichtungen und Verfahren zur Abscheidung dünner Schichten auf einer laufenden Folienbahn sowie Folienbahn oder Zuschnitte daraus. |
KR101704723B1 (ko) * | 2015-04-06 | 2017-02-09 | 연세대학교 산학협력단 | 탄소 박막 소자 및 이의 제조 방법 |
CN107815665A (zh) * | 2016-09-14 | 2018-03-20 | 中国科学院上海硅酸盐研究所 | 一种二氧化钛薄膜及其制备方法和应用 |
CN106947957A (zh) * | 2017-03-01 | 2017-07-14 | 秦皇岛博硕光电设备股份有限公司 | 食品/药品容器的加工方法、食品/药品容器用材料及食品/药品容器 |
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CN110719968A (zh) * | 2017-06-22 | 2020-01-21 | 宝洁公司 | 包括水溶性层和气相沉积无机涂层的膜 |
KR20200143713A (ko) * | 2018-04-12 | 2020-12-24 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 광촉매 전사 필름 및 그의 제조 방법 |
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-
2009
- 2009-12-07 KR KR1020117012495A patent/KR20110100618A/ko not_active Application Discontinuation
- 2009-12-07 BR BRPI0922795A patent/BRPI0922795A2/pt not_active IP Right Cessation
- 2009-12-07 JP JP2011539778A patent/JP2012511106A/ja active Pending
- 2009-12-07 US US12/632,749 patent/US20100143710A1/en not_active Abandoned
- 2009-12-07 EP EP09831274A patent/EP2364380A4/en not_active Withdrawn
- 2009-12-07 CN CN2009801486298A patent/CN102239278A/zh active Pending
- 2009-12-07 WO PCT/US2009/067024 patent/WO2010065966A2/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2010065966A2 (en) | 2010-06-10 |
JP2012511106A (ja) | 2012-05-17 |
WO2010065966A3 (en) | 2010-10-14 |
EP2364380A4 (en) | 2012-07-04 |
EP2364380A2 (en) | 2011-09-14 |
CN102239278A (zh) | 2011-11-09 |
US20100143710A1 (en) | 2010-06-10 |
KR20110100618A (ko) | 2011-09-14 |
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