DE602007014190D1 - Atomlagenabscheidungssystem und verfahren zur beschichtung von flexiblen substraten - Google Patents
Atomlagenabscheidungssystem und verfahren zur beschichtung von flexiblen substratenInfo
- Publication number
- DE602007014190D1 DE602007014190D1 DE602007014190T DE602007014190T DE602007014190D1 DE 602007014190 D1 DE602007014190 D1 DE 602007014190D1 DE 602007014190 T DE602007014190 T DE 602007014190T DE 602007014190 T DE602007014190 T DE 602007014190T DE 602007014190 D1 DE602007014190 D1 DE 602007014190D1
- Authority
- DE
- Germany
- Prior art keywords
- precursor
- substrate
- precursor zones
- zones
- atomic layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title abstract 6
- 238000000231 atomic layer deposition Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 239000011248 coating agent Substances 0.000 title 1
- 238000000576 coating method Methods 0.000 title 1
- 239000002243 precursor Substances 0.000 abstract 9
- 238000002955 isolation Methods 0.000 abstract 2
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US74378606P | 2006-03-26 | 2006-03-26 | |
PCT/US2007/064961 WO2007112370A1 (en) | 2006-03-26 | 2007-03-26 | Atomic layer deposition system and method for coating flexible substrates |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602007014190D1 true DE602007014190D1 (de) | 2011-06-09 |
Family
ID=38541449
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602007014190T Active DE602007014190D1 (de) | 2006-03-26 | 2007-03-26 | Atomlagenabscheidungssystem und verfahren zur beschichtung von flexiblen substraten |
Country Status (9)
Country | Link |
---|---|
US (4) | US8137464B2 (de) |
EP (1) | EP2000008B1 (de) |
KR (1) | KR101314708B1 (de) |
CN (1) | CN101406108B (de) |
AT (1) | ATE507320T1 (de) |
BR (1) | BRPI0709199A2 (de) |
DE (1) | DE602007014190D1 (de) |
ES (1) | ES2361661T3 (de) |
WO (1) | WO2007112370A1 (de) |
Families Citing this family (106)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE507320T1 (de) | 2006-03-26 | 2011-05-15 | Lotus Applied Technology Llc | Atomlagenabscheidungssystem und verfahren zur beschichtung von flexiblen substraten |
US20070281089A1 (en) * | 2006-06-05 | 2007-12-06 | General Electric Company | Systems and methods for roll-to-roll atomic layer deposition on continuously fed objects |
US8187679B2 (en) * | 2006-07-29 | 2012-05-29 | Lotus Applied Technology, Llc | Radical-enhanced atomic layer deposition system and method |
US20100139557A1 (en) * | 2006-10-13 | 2010-06-10 | Solopower, Inc. | Reactor to form solar cell absorbers in roll-to-roll fashion |
US20080119098A1 (en) * | 2006-11-21 | 2008-05-22 | Igor Palley | Atomic layer deposition on fibrous materials |
US11136667B2 (en) * | 2007-01-08 | 2021-10-05 | Eastman Kodak Company | Deposition system and method using a delivery head separated from a substrate by gas pressure |
US8207063B2 (en) * | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
US8287647B2 (en) * | 2007-04-17 | 2012-10-16 | Lam Research Corporation | Apparatus and method for atomic layer deposition |
US8039052B2 (en) * | 2007-09-06 | 2011-10-18 | Intermolecular, Inc. | Multi-region processing system and heads |
US20090081356A1 (en) * | 2007-09-26 | 2009-03-26 | Fedorovskaya Elena A | Process for forming thin film encapsulation layers |
DE102007058052B4 (de) * | 2007-11-30 | 2013-12-05 | Von Ardenne Anlagentechnik Gmbh | Vakuumbeschichtungsanlage |
US20100028533A1 (en) * | 2008-03-04 | 2010-02-04 | Brent Bollman | Methods and Devices for Processing a Precursor Layer in a Group VIA Environment |
US7670894B2 (en) * | 2008-04-30 | 2010-03-02 | Intel Corporation | Selective high-k dielectric film deposition for semiconductor device |
US20100037824A1 (en) * | 2008-08-13 | 2010-02-18 | Synos Technology, Inc. | Plasma Reactor Having Injector |
US20100037820A1 (en) * | 2008-08-13 | 2010-02-18 | Synos Technology, Inc. | Vapor Deposition Reactor |
US8770142B2 (en) * | 2008-09-17 | 2014-07-08 | Veeco Ald Inc. | Electrode for generating plasma and plasma generator |
US8851012B2 (en) * | 2008-09-17 | 2014-10-07 | Veeco Ald Inc. | Vapor deposition reactor using plasma and method for forming thin film using the same |
US20100075037A1 (en) * | 2008-09-22 | 2010-03-25 | Marsh Eugene P | Deposition Systems, ALD Systems, CVD Systems, Deposition Methods, ALD Methods and CVD Methods |
WO2010049024A1 (en) * | 2008-10-31 | 2010-05-06 | Oerlikon Solar Ip Ag, Truebbach | Precursor recycling |
CN102239278A (zh) * | 2008-12-05 | 2011-11-09 | 莲花应用技术有限责任公司 | 具有改进的阻隔层性能的薄膜的高速沉积 |
WO2010078088A1 (en) * | 2008-12-29 | 2010-07-08 | Solopower, Inc. | Reactor to form solar cell absorbers in roll-to-roll fashion |
US8871628B2 (en) * | 2009-01-21 | 2014-10-28 | Veeco Ald Inc. | Electrode structure, device comprising the same and method for forming electrode structure |
KR101172147B1 (ko) | 2009-02-23 | 2012-08-07 | 시너스 테크놀리지, 인코포레이티드 | 플라즈마에 의한 라디칼을 이용한 박막 형성 방법 |
US20100221426A1 (en) * | 2009-03-02 | 2010-09-02 | Fluens Corporation | Web Substrate Deposition System |
US20110081487A1 (en) * | 2009-03-04 | 2011-04-07 | Brent Bollman | Methods and devices for processing a precursor layer in a group via environment |
US20100310769A1 (en) * | 2009-06-07 | 2010-12-09 | Veeco Compound Semiconductor, Inc. | Continuous Feed Chemical Vapor Deposition System |
US20100310766A1 (en) * | 2009-06-07 | 2010-12-09 | Veeco Compound Semiconductor, Inc. | Roll-to-Roll Chemical Vapor Deposition System |
US8758512B2 (en) * | 2009-06-08 | 2014-06-24 | Veeco Ald Inc. | Vapor deposition reactor and method for forming thin film |
US20110023775A1 (en) * | 2009-07-31 | 2011-02-03 | E.I. Du Pont De Nemours And Company | Apparatus for atomic layer deposition |
US8657959B2 (en) * | 2009-07-31 | 2014-02-25 | E I Du Pont De Nemours And Company | Apparatus for atomic layer deposition on a moving substrate |
FI20095947A0 (fi) * | 2009-09-14 | 2009-09-14 | Beneq Oy | Monikerrospinnoite, menetelmä monikerrospinnoitteen valmistamiseksi, ja sen käyttötapoja |
CN102639749B (zh) * | 2009-10-14 | 2015-06-17 | 莲花应用技术有限责任公司 | 在原子层沉积系统中抑制过量前体在单独前体区之间运送 |
US20110097492A1 (en) * | 2009-10-27 | 2011-04-28 | Kerr Roger S | Fluid distribution manifold operating state management system |
US20110097491A1 (en) * | 2009-10-27 | 2011-04-28 | Levy David H | Conveyance system including opposed fluid distribution manifolds |
US20110120544A1 (en) | 2009-11-20 | 2011-05-26 | Levy David H | Deposition inhibitor composition and method of use |
WO2011062779A1 (en) | 2009-11-20 | 2011-05-26 | Eastman Kodak Company | Method for selective deposition and devices |
US8637123B2 (en) * | 2009-12-29 | 2014-01-28 | Lotus Applied Technology, Llc | Oxygen radical generation for radical-enhanced thin film deposition |
WO2011088024A1 (en) * | 2010-01-12 | 2011-07-21 | Sundew Technologies, Llc | Methods and apparatus for atomic layer deposition on large area substrates |
US9303316B1 (en) * | 2010-01-15 | 2016-04-05 | Apollo Precision Kunming Yuanhong Limited | Continuous web apparatus and method using an air to vacuum seal and accumulator |
KR101010196B1 (ko) * | 2010-01-27 | 2011-01-21 | 에스엔유 프리시젼 주식회사 | 진공 증착 장비 |
BR112013000116A2 (pt) * | 2010-07-23 | 2016-05-24 | Lotus Applied Technology Llc | mecanismo de transporte de substrato contatando um único lado de um substrato de tela flexível para deposição de filme fino de rolo para rolo |
FI20105905A0 (fi) | 2010-08-30 | 2010-08-30 | Beneq Oy | Suutinpää ja laite |
FI124113B (fi) * | 2010-08-30 | 2014-03-31 | Beneq Oy | Laitteisto ja menetelmä substraatin pinnan muokkaamiseksi |
US8771791B2 (en) * | 2010-10-18 | 2014-07-08 | Veeco Ald Inc. | Deposition of layer using depositing apparatus with reciprocating susceptor |
US8877300B2 (en) | 2011-02-16 | 2014-11-04 | Veeco Ald Inc. | Atomic layer deposition using radicals of gas mixture |
US9163310B2 (en) | 2011-02-18 | 2015-10-20 | Veeco Ald Inc. | Enhanced deposition of layer on substrate using radicals |
US20120213947A1 (en) * | 2011-02-18 | 2012-08-23 | Synos Technology, Inc. | Depositing thin layer of material on permeable substrate |
CN103459665B (zh) * | 2011-03-29 | 2017-02-22 | 凸版印刷株式会社 | 卷绕成膜装置 |
KR101719860B1 (ko) * | 2011-04-25 | 2017-03-24 | 가부시키가이샤 니콘 | 기판처리장치 |
JP6204911B2 (ja) * | 2011-07-11 | 2017-09-27 | ロータス アプライド テクノロジー エルエルシーLotus Applied Technology, Llc | 混合金属酸化物バリアフィルム及び混合金属酸化物バリアフィルムを形成する原子層成膜方法 |
EP2557198A1 (de) * | 2011-08-10 | 2013-02-13 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Verfahren und Vorrichtung zur Ablagerung atomarer Schichten auf einem Substrat |
EP2773793B1 (de) | 2011-10-31 | 2017-11-29 | 3M Innovative Properties Company | Verfahren zum aufbringen einer beschichtung auf einem substrat in gewalzter form |
US20130143415A1 (en) * | 2011-12-01 | 2013-06-06 | Applied Materials, Inc. | Multi-Component Film Deposition |
US8618003B2 (en) | 2011-12-05 | 2013-12-31 | Eastman Kodak Company | Method of making electronic devices using selective deposition |
JP6119745B2 (ja) * | 2012-05-31 | 2017-04-26 | 凸版印刷株式会社 | 巻き取り成膜装置 |
KR20150023016A (ko) * | 2012-06-15 | 2015-03-04 | 피코순 오와이 | 원자층 퇴적에 의한 기판 웹 코팅 |
CN104364419A (zh) * | 2012-06-15 | 2015-02-18 | 皮考逊公司 | 通过原子层沉积来涂覆衬底卷式基材 |
US9662688B2 (en) | 2012-07-09 | 2017-05-30 | Kla-Tencor Corporation | Apparatus and method for cross-flow purge for optical components in a chamber |
KR101372309B1 (ko) * | 2012-08-07 | 2014-03-13 | (주)씨엔원 | 롤투롤 방식의 원자층 증착 장비 및 원자층 증착 방법 |
EP2906746B1 (de) * | 2012-10-09 | 2019-06-12 | Europlasma Nv | Oberflächenbeschichtungen |
KR102184276B1 (ko) * | 2012-10-09 | 2020-12-01 | 유로플라즈마 엔브이 | 표면 코팅을 제공하기 위한 장치 및 방법 |
KR101420333B1 (ko) * | 2012-11-19 | 2014-07-16 | 삼성디스플레이 주식회사 | 기상 증착 장치, 이를 이용한 박막 형성 방법 및 유기 발광 표시 장치 제조 방법 |
TWI548770B (zh) * | 2012-11-30 | 2016-09-11 | Lg化學股份有限公司 | 形成膜層之裝置 |
KR101548820B1 (ko) | 2012-11-30 | 2015-08-31 | 주식회사 엘지화학 | 막 형성 장치 |
US20140166990A1 (en) | 2012-12-17 | 2014-06-19 | Universal Display Corporation | Manufacturing flexible organic electronic devices |
US11326255B2 (en) * | 2013-02-07 | 2022-05-10 | Uchicago Argonne, Llc | ALD reactor for coating porous substrates |
JP5432395B1 (ja) | 2013-02-28 | 2014-03-05 | 三井造船株式会社 | 成膜装置及び成膜方法 |
WO2014200585A2 (en) | 2013-03-15 | 2014-12-18 | The University Of Houston System | Methods and systems for fabricating high quality superconducting tapes |
US9435028B2 (en) * | 2013-05-06 | 2016-09-06 | Lotus Applied Technology, Llc | Plasma generation for thin film deposition on flexible substrates |
WO2014207289A1 (en) * | 2013-06-27 | 2014-12-31 | Picosun Oy | Forming a substrate web track in an atomic layer deposition reactor |
JP2017503079A (ja) | 2014-01-05 | 2017-01-26 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 空間的原子層堆積又はパルス化学気相堆積を使用する膜堆積 |
KR101828928B1 (ko) * | 2014-02-06 | 2018-02-13 | 비코 에이엘디 인코포레이티드 | 단거리 왕복 운동을 사용한 물질의 공간적 증착 |
US9133546B1 (en) | 2014-03-05 | 2015-09-15 | Lotus Applied Technology, Llc | Electrically- and chemically-active adlayers for plasma electrodes |
CN103993297A (zh) * | 2014-06-09 | 2014-08-20 | 中国科学院宁波材料技术与工程研究所 | 一种连续快速生长石墨烯的气相沉积装置 |
CN104152844A (zh) * | 2014-08-11 | 2014-11-19 | 江南石墨烯研究院 | 一种在真空中搭载衬底的方式 |
CN106715752B (zh) * | 2014-09-19 | 2020-03-20 | 凸版印刷株式会社 | 成膜装置以及成膜方法 |
JP6547271B2 (ja) * | 2014-10-14 | 2019-07-24 | 凸版印刷株式会社 | フレシキブル基板上への気相成長法による成膜方法 |
NL2013739B1 (en) * | 2014-11-04 | 2016-10-04 | Asm Int Nv | Atomic layer deposition apparatus and method for processing substrates using an apparatus. |
FI126894B (en) | 2014-12-22 | 2017-07-31 | Beneq Oy | Nozzle head, apparatus and method for coating a substrate surface |
JP6672595B2 (ja) | 2015-03-17 | 2020-03-25 | 凸版印刷株式会社 | 成膜装置 |
WO2016205242A1 (en) * | 2015-06-15 | 2016-12-22 | Ald Nanosolutions, Inc. | Continuous spatial atomic layer deposition process and apparatus for applying films on particles |
KR102420015B1 (ko) * | 2015-08-28 | 2022-07-12 | 삼성전자주식회사 | Cs-ald 장치의 샤워헤드 |
US11244822B2 (en) * | 2015-10-20 | 2022-02-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for manufacturing a thin film and a method therefor |
CN105353680B (zh) * | 2015-11-19 | 2018-07-17 | 许昌学院 | 一种用于原子层沉积仪的控制设备 |
JP6697706B2 (ja) * | 2015-12-07 | 2020-05-27 | 凸版印刷株式会社 | 原子層堆積装置 |
WO2017188947A1 (en) * | 2016-04-27 | 2017-11-02 | Applied Materials, Inc. | System for atomic layer deposition on flexible substrates and method for the same |
TWI757299B (zh) | 2016-06-02 | 2022-03-11 | 美商應用材料股份有限公司 | 用於沉積材料在連續基板上的方法及設備 |
FI127502B (en) * | 2016-06-30 | 2018-07-31 | Beneq Oy | Method and apparatus for coating a substrate |
KR102622868B1 (ko) * | 2016-11-28 | 2024-01-08 | 엘지디스플레이 주식회사 | 열충격이 방지된 롤투롤 제조장치 |
US10435788B2 (en) * | 2017-03-14 | 2019-10-08 | Eastman Kodak | Deposition system with repeating motion profile |
JP6876479B2 (ja) * | 2017-03-23 | 2021-05-26 | キオクシア株式会社 | 半導体装置の製造方法 |
KR102218855B1 (ko) * | 2017-07-12 | 2021-02-23 | 주식회사 엘지화학 | 다공성 기재의 표면 코팅 장치 및 방법 |
US10519544B2 (en) * | 2017-08-24 | 2019-12-31 | United Technologies Corporation | Method for enabling optimized material deposition |
CN112334596B (zh) * | 2018-06-14 | 2023-10-20 | 应用材料公司 | 用于导引柔性基板的滚轴装置、用于传送柔性基板的滚轴装置的用途、真空处理设备及处理柔性基板的方法 |
KR20200033507A (ko) * | 2018-09-20 | 2020-03-30 | 주식회사 엘지화학 | 원자층 증착 장치 |
CN109082648A (zh) * | 2018-11-13 | 2018-12-25 | 北京工业大学 | 原子层沉积连续式双面镀膜的卷绕装置 |
US20200189874A1 (en) | 2018-12-12 | 2020-06-18 | Applied Materials, Inc. | Free-span coating systems and methods |
WO2020171114A1 (ja) * | 2019-02-20 | 2020-08-27 | パナソニックIpマネジメント株式会社 | 製膜方法、製膜装置および電極箔の製造方法 |
CN110273147A (zh) * | 2019-07-11 | 2019-09-24 | 齐鲁工业大学 | 圆环型表面复合强化方法 |
DE102019007935B4 (de) * | 2019-11-14 | 2023-06-29 | Elfolion Gmbh | Verfahren zum Bearbeiten flexibler Substrate und Vakuumbearbeitungsanlage zur Umsetzung des Verfahrens |
US11111578B1 (en) | 2020-02-13 | 2021-09-07 | Uchicago Argonne, Llc | Atomic layer deposition of fluoride thin films |
WO2021214578A1 (en) * | 2020-04-20 | 2021-10-28 | Smit Thermal Solutions | Atomic layer deposition device |
WO2021250477A1 (en) * | 2020-06-10 | 2021-12-16 | 3M Innovative Properties Company | Roll-to-roll vapor deposition apparatus and method |
KR102461975B1 (ko) * | 2020-10-29 | 2022-11-02 | 주식회사 비이아이랩 | 롤투롤 원자층 증착장치 |
US20220181599A1 (en) * | 2020-12-03 | 2022-06-09 | Applied Materials, Inc. | Lithium metal surface modification using carbonate passivation |
US11901169B2 (en) | 2022-02-14 | 2024-02-13 | Uchicago Argonne, Llc | Barrier coatings |
Family Cites Families (75)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2384500A (en) | 1942-07-08 | 1945-09-11 | Crown Cork & Seal Co | Apparatus and method of coating |
US2458394A (en) | 1945-11-15 | 1949-01-04 | Eastman Kodak Co | Film processing unit |
US3314393A (en) * | 1962-07-05 | 1967-04-18 | Nippon Electric Co | Vapor deposition device |
US3379803A (en) * | 1964-05-04 | 1968-04-23 | Union Carbide Corp | Coating method and apparatus for deposition of polymer-forming vapor under vacuum |
US3650042A (en) * | 1969-05-19 | 1972-03-21 | Ibm | Gas barrier for interconnecting and isolating two atmospheres |
US3964434A (en) | 1974-11-04 | 1976-06-22 | Technicon Instruments Corporation | Coating apparatus including liquid sealant between compartments |
SE393967B (sv) | 1974-11-29 | 1977-05-31 | Sateko Oy | Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket |
GB1596385A (en) * | 1976-12-29 | 1981-08-26 | Matsushita Electric Ind Co Ltd | Methods and apparatus for manufacturing magnetic recording media |
US4454835A (en) * | 1982-09-13 | 1984-06-19 | The United States Of America As Represented By The Secretary Of The Navy | Internal photolysis reactor |
EP0122092A3 (de) * | 1983-04-06 | 1985-07-10 | General Engineering Radcliffe Limited | Vorrichtung zur Vakuumbeschichtung |
JPS6030124A (ja) * | 1983-07-28 | 1985-02-15 | Fuji Electric Corp Res & Dev Ltd | 多段電極型半導体薄膜生成装置 |
US4803947A (en) | 1986-01-15 | 1989-02-14 | Canon Kabushiki Kaisha | Apparatus for forming deposited film |
US4728406A (en) | 1986-08-18 | 1988-03-01 | Energy Conversion Devices, Inc. | Method for plasma - coating a semiconductor body |
JPH01156464A (ja) * | 1987-12-11 | 1989-06-20 | Furukawa Electric Co Ltd:The | 線条体用気相析出被覆装置 |
JP2590200B2 (ja) | 1988-05-27 | 1997-03-12 | 株式会社日立製作所 | 真空連続処理装置 |
JP2810529B2 (ja) * | 1990-11-20 | 1998-10-15 | キヤノン株式会社 | 堆積膜形成方法及び堆積膜形成装置 |
US5629054A (en) * | 1990-11-20 | 1997-05-13 | Canon Kabushiki Kaisha | Method for continuously forming a functional deposit film of large area by micro-wave plasma CVD method |
JP2975151B2 (ja) | 1991-03-28 | 1999-11-10 | キヤノン株式会社 | 半導体素子の連続的製造装置 |
JPH0578818A (ja) | 1991-09-19 | 1993-03-30 | Hitachi Cable Ltd | 部分被膜の形成方法 |
KR940000259A (ko) * | 1992-06-12 | 1994-01-03 | 게리 리 그리스월드 | 테이프 지지체상에서의 다층 필름 제조 시스템 및 방법 |
IT1261918B (it) * | 1993-06-11 | 1996-06-04 | Cetev Cent Tecnolog Vuoto | Struttura per deposizione reattiva di metalli in impianti da vuoto continui e relativo processo. |
US5411592A (en) | 1994-06-06 | 1995-05-02 | Ovonic Battery Company, Inc. | Apparatus for deposition of thin-film, solid state batteries |
US5736431A (en) * | 1995-02-28 | 1998-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing thin film solar battery |
US5817550A (en) | 1996-03-05 | 1998-10-06 | Regents Of The University Of California | Method for formation of thin film transistors on plastic substrates |
US6174377B1 (en) * | 1997-03-03 | 2001-01-16 | Genus, Inc. | Processing chamber for atomic layer deposition processes |
JP3911780B2 (ja) | 1997-08-12 | 2007-05-09 | 株式会社カツシカ | 棒状化粧料繰り出し容器 |
AU5334999A (en) | 1998-08-03 | 2000-02-28 | Uniax Corporation | Encapsulation of polymer-based solid state devices with inorganic materials |
JP3779076B2 (ja) * | 1998-10-06 | 2006-05-24 | 株式会社日本コンラックス | 紙幣処理装置 |
US6186090B1 (en) | 1999-03-04 | 2001-02-13 | Energy Conversion Devices, Inc. | Apparatus for the simultaneous deposition by physical vapor deposition and chemical vapor deposition and method therefor |
JP4316767B2 (ja) | 2000-03-22 | 2009-08-19 | 株式会社半導体エネルギー研究所 | 基板処理装置 |
US20010052752A1 (en) | 2000-04-25 | 2001-12-20 | Ghosh Amalkumar P. | Thin film encapsulation of organic light emitting diode devices |
US6660326B2 (en) | 2000-08-04 | 2003-12-09 | Tomoegawa Paper Co. Ltd. | Production method for monolayer powder film and production apparatus therefor |
KR100458982B1 (ko) * | 2000-08-09 | 2004-12-03 | 주성엔지니어링(주) | 회전형 가스분사기를 가지는 반도체소자 제조장치 및 이를이용한 박막증착방법 |
WO2002071506A1 (en) | 2001-02-15 | 2002-09-12 | Emagin Corporation | Thin film encapsulation of organic light emitting diode devices |
WO2002091064A2 (en) | 2001-05-04 | 2002-11-14 | General Atomics | O2 and h2o barrier material |
DE10123241C1 (de) * | 2001-05-12 | 2002-10-02 | Sgl Carbon Ag | Gasabschluss für Reaktoren mittels Gasleitkörpern |
KR100492769B1 (ko) * | 2001-05-17 | 2005-06-07 | 주식회사 엘지이아이 | 수직챔버를 구비한 플라즈마중합 연속처리장치 |
US6461436B1 (en) * | 2001-10-15 | 2002-10-08 | Micron Technology, Inc. | Apparatus and process of improving atomic layer deposition chamber performance |
US7081271B2 (en) * | 2001-12-07 | 2006-07-25 | Applied Materials, Inc. | Cyclical deposition of refractory metal silicon nitride |
JP4003163B2 (ja) | 2002-01-15 | 2007-11-07 | 富士フイルム株式会社 | 多層塗布膜の製造装置 |
EP1485513A2 (de) * | 2002-03-08 | 2004-12-15 | Sundew Technologies, LLC | Ald verfahren und vorrichtung |
DE60211470T2 (de) | 2002-03-15 | 2006-11-09 | Vhf Technologies S.A. | Vorrichtung und Verfahren zur Herstellung von flexiblen Halbleiter-Einrichtungen |
US7067439B2 (en) * | 2002-06-14 | 2006-06-27 | Applied Materials, Inc. | ALD metal oxide deposition process using direct oxidation |
US6936086B2 (en) | 2002-09-11 | 2005-08-30 | Planar Systems, Inc. | High conductivity particle filter |
US6821563B2 (en) * | 2002-10-02 | 2004-11-23 | Applied Materials, Inc. | Gas distribution system for cyclical layer deposition |
KR100512626B1 (ko) * | 2002-10-18 | 2005-09-02 | 엘지.필립스 엘시디 주식회사 | 유기전계발광소자 및 그 제조방법 |
CN100582295C (zh) | 2002-12-26 | 2010-01-20 | 凸版印刷株式会社 | 真空蒸镀装置及蒸镀薄膜制造方法 |
US7198820B2 (en) | 2003-02-06 | 2007-04-03 | Planar Systems, Inc. | Deposition of carbon- and transition metal-containing thin films |
US6878207B2 (en) | 2003-02-19 | 2005-04-12 | Energy Conversion Devices, Inc. | Gas gate for isolating regions of differing gaseous pressure |
US6972055B2 (en) | 2003-03-28 | 2005-12-06 | Finens Corporation | Continuous flow deposition system |
US7018713B2 (en) | 2003-04-02 | 2006-03-28 | 3M Innovative Properties Company | Flexible high-temperature ultrabarrier |
US6888172B2 (en) | 2003-04-11 | 2005-05-03 | Eastman Kodak Company | Apparatus and method for encapsulating an OLED formed on a flexible substrate |
EP1620579A2 (de) * | 2003-04-23 | 2006-02-01 | Genus, Inc. | Sammlung unbenutzter präkursoren in ald |
US6941963B2 (en) | 2003-06-26 | 2005-09-13 | Planar Systems, Inc. | High-speed diaphragm valve for atomic layer deposition |
US20040261703A1 (en) | 2003-06-27 | 2004-12-30 | Jeffrey D. Chinn | Apparatus and method for controlled application of reactive vapors to produce thin films and coatings |
JP2005029895A (ja) * | 2003-07-04 | 2005-02-03 | Agfa Gevaert Nv | 蒸着装置 |
JP2005078818A (ja) | 2003-08-28 | 2005-03-24 | Fuji Electric Systems Co Ltd | 誘導加熱式乾留炉 |
US7074719B2 (en) | 2003-11-28 | 2006-07-11 | International Business Machines Corporation | ALD deposition of ruthenium |
US20050172897A1 (en) * | 2004-02-09 | 2005-08-11 | Frank Jansen | Barrier layer process and arrangement |
US8304019B1 (en) | 2004-02-19 | 2012-11-06 | Nanosolar Inc. | Roll-to-roll atomic layer deposition method and system |
JP4601975B2 (ja) | 2004-03-01 | 2010-12-22 | 東京エレクトロン株式会社 | 成膜方法 |
KR100618606B1 (ko) | 2004-06-02 | 2006-09-08 | 한국전기연구원 | 금속 산화물 소자를 제조하는 방법 |
US20060073276A1 (en) | 2004-10-04 | 2006-04-06 | Eric Antonissen | Multi-zone atomic layer deposition apparatus and method |
GB0423685D0 (en) | 2004-10-26 | 2004-11-24 | Dow Corning Ireland Ltd | Improved method for coating a substrate |
JP2006124784A (ja) | 2004-10-29 | 2006-05-18 | Canon Inc | 真空装置および真空チャンバーの排気方法 |
WO2006088463A1 (en) | 2005-02-17 | 2006-08-24 | Selitser Simon I | Atmospheric pressure molecular layer cvd |
JPWO2006093168A1 (ja) | 2005-03-04 | 2008-08-07 | 株式会社ユーテック | Cvd装置と、それを用いた多層膜形成方法と、それにより形成された多層膜 |
DE102005058869A1 (de) | 2005-12-09 | 2007-06-14 | Cis Solartechnik Gmbh & Co. Kg | Verfahren und Vorrichtung zur Beschichtung von Bändern |
US20090304924A1 (en) | 2006-03-03 | 2009-12-10 | Prasad Gadgil | Apparatus and method for large area multi-layer atomic layer chemical vapor processing of thin films |
ATE507320T1 (de) | 2006-03-26 | 2011-05-15 | Lotus Applied Technology Llc | Atomlagenabscheidungssystem und verfahren zur beschichtung von flexiblen substraten |
US7413982B2 (en) | 2006-03-29 | 2008-08-19 | Eastman Kodak Company | Process for atomic layer deposition |
US7456429B2 (en) | 2006-03-29 | 2008-11-25 | Eastman Kodak Company | Apparatus for atomic layer deposition |
US20070281089A1 (en) * | 2006-06-05 | 2007-12-06 | General Electric Company | Systems and methods for roll-to-roll atomic layer deposition on continuously fed objects |
US7976899B2 (en) * | 2006-10-23 | 2011-07-12 | General Electric Company | Methods for selective deposition of graded materials on continuously fed objects |
CN102239278A (zh) | 2008-12-05 | 2011-11-09 | 莲花应用技术有限责任公司 | 具有改进的阻隔层性能的薄膜的高速沉积 |
-
2007
- 2007-03-26 AT AT07759411T patent/ATE507320T1/de not_active IP Right Cessation
- 2007-03-26 US US11/691,421 patent/US8137464B2/en active Active
- 2007-03-26 KR KR1020087023321A patent/KR101314708B1/ko active IP Right Grant
- 2007-03-26 BR BRPI0709199-0A patent/BRPI0709199A2/pt not_active Application Discontinuation
- 2007-03-26 EP EP07759411A patent/EP2000008B1/de active Active
- 2007-03-26 DE DE602007014190T patent/DE602007014190D1/de active Active
- 2007-03-26 WO PCT/US2007/064961 patent/WO2007112370A1/en active Application Filing
- 2007-03-26 ES ES07759411T patent/ES2361661T3/es active Active
- 2007-03-26 CN CN2007800098756A patent/CN101406108B/zh active Active
-
2010
- 2010-04-06 US US12/755,239 patent/US8202366B2/en active Active
-
2012
- 2012-03-09 US US13/417,182 patent/US9238868B2/en active Active
- 2012-05-08 US US13/467,038 patent/US9469901B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
BRPI0709199A2 (pt) | 2011-06-28 |
US20070224348A1 (en) | 2007-09-27 |
EP2000008B1 (de) | 2011-04-27 |
WO2007112370A1 (en) | 2007-10-04 |
US20120219708A1 (en) | 2012-08-30 |
EP2000008A4 (de) | 2010-05-05 |
US8202366B2 (en) | 2012-06-19 |
US20100189900A1 (en) | 2010-07-29 |
CN101406108A (zh) | 2009-04-08 |
US8137464B2 (en) | 2012-03-20 |
KR20080106555A (ko) | 2008-12-08 |
CN101406108B (zh) | 2011-06-22 |
EP2000008A1 (de) | 2008-12-10 |
US9238868B2 (en) | 2016-01-19 |
ATE507320T1 (de) | 2011-05-15 |
KR101314708B1 (ko) | 2013-10-10 |
US20120171371A1 (en) | 2012-07-05 |
ES2361661T3 (es) | 2011-06-21 |
US9469901B2 (en) | 2016-10-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ATE507320T1 (de) | Atomlagenabscheidungssystem und verfahren zur beschichtung von flexiblen substraten | |
TW200616039A (en) | Processing system and method for chemically treating a TERA layer | |
TW200606168A (en) | Copper (I) compounds useful as deposition precursors of copper thin films | |
TW200712227A (en) | Atomic layer deposition of metal-containing films using surface-activating agents | |
EP2281300A4 (de) | Verfahren und vorrichtung für einen chemischen dampfabscheidungsreaktor | |
FI20105901L (fi) | Laitteisto ja menetelmä substraatin pinnan muokkaamiseksi | |
WO2008016836A3 (en) | Radical-enhanced atomic layer deposition system and method | |
WO2008057625A3 (en) | Systems and methods for roll-to-roll atomic layer deposition on continuously fed objects | |
TW200618110A (en) | Method of forming a transistor having a dual layer dielectric | |
GB2434687B (en) | Thin film transistor array substrate system and method for manufacturing | |
DK2002019T3 (da) | Artikel med derpå anbragte lokaliserede molekyler samt fremgangsmåde til fremstilling deraf | |
TW200620490A (en) | Method of forming a thin film component | |
WO2012118955A3 (en) | Apparatus and process for atomic layer deposition | |
WO2011087698A3 (en) | Pecvd multi-step processing with continuous plasma | |
MY185883A (en) | Perovskite material layer processing | |
MX2010007723A (es) | Dispositivos fotovoltaicos tratados con plasma. | |
WO2012012744A3 (en) | Substrate transport mechanism contacting a single side of a flexible web substrate for roll-to-roll thin film deposition | |
GB201113244D0 (en) | A diamond optical element | |
DE602007005017D1 (de) | Verfahren für leicht zu reinigende substrate und artikel daraus | |
TW200636285A (en) | Method of fabricating interferometric devices using lift-off processing techniques | |
TW200637051A (en) | Mask, mask manufacturing method, pattern forming apparatus, and pattern formation method | |
WO2008063337A3 (en) | Semiconductor-on-diamond devices and associated methods | |
MY168024A (en) | Method of managing loading, unloading, and routing of trackless vehicles and system using the same | |
NZ714303A (en) | Decomposable apparatus and methods for fabricating same | |
SG10201805222PA (en) | Monitoring system for deposition and method of operation thereof |