ATE326556T1 - Vorrichtung und verfahren zur herstellung von flexiblen halbleiter-einrichtungen - Google Patents

Vorrichtung und verfahren zur herstellung von flexiblen halbleiter-einrichtungen

Info

Publication number
ATE326556T1
ATE326556T1 AT02076056T AT02076056T ATE326556T1 AT E326556 T1 ATE326556 T1 AT E326556T1 AT 02076056 T AT02076056 T AT 02076056T AT 02076056 T AT02076056 T AT 02076056T AT E326556 T1 ATE326556 T1 AT E326556T1
Authority
AT
Austria
Prior art keywords
flexible
semiconductor
semiconductor devices
deposited
computer
Prior art date
Application number
AT02076056T
Other languages
English (en)
Inventor
Diego Fischer
Pedro Torres
Original Assignee
Vhf Technologies Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vhf Technologies Sa filed Critical Vhf Technologies Sa
Application granted granted Critical
Publication of ATE326556T1 publication Critical patent/ATE326556T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/3277—Continuous moving of continuous material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Analytical Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Bipolar Transistors (AREA)
AT02076056T 2002-03-15 2002-03-15 Vorrichtung und verfahren zur herstellung von flexiblen halbleiter-einrichtungen ATE326556T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP02076056A EP1347077B1 (de) 2002-03-15 2002-03-15 Vorrichtung und Verfahren zur Herstellung von flexiblen Halbleiter-Einrichtungen

Publications (1)

Publication Number Publication Date
ATE326556T1 true ATE326556T1 (de) 2006-06-15

Family

ID=27771910

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02076056T ATE326556T1 (de) 2002-03-15 2002-03-15 Vorrichtung und verfahren zur herstellung von flexiblen halbleiter-einrichtungen

Country Status (6)

Country Link
US (1) US8440020B2 (de)
EP (1) EP1347077B1 (de)
AT (1) ATE326556T1 (de)
DE (1) DE60211470T2 (de)
ES (1) ES2263734T3 (de)
PT (1) PT1347077E (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050223984A1 (en) * 2004-04-08 2005-10-13 Hee-Gyoun Lee Chemical vapor deposition (CVD) apparatus usable in the manufacture of superconducting conductors
US20050223983A1 (en) * 2004-04-08 2005-10-13 Venkat Selvamanickam Chemical vapor deposition (CVD) apparatus usable in the manufacture of superconducting conductors
US7259106B2 (en) * 2004-09-10 2007-08-21 Versatilis Llc Method of making a microelectronic and/or optoelectronic circuitry sheet
TWI328050B (en) * 2005-05-10 2010-08-01 Ulvac Inc Reeling type plasma cvd device
BRPI0709199A2 (pt) 2006-03-26 2011-06-28 Lotus Applied Technology Llc sistema e método para depositar uma pelìcula fina em um substrato flexìvel
JP2007302928A (ja) * 2006-05-10 2007-11-22 Sumitomo Electric Ind Ltd 長尺基材連続処理用の搬送機構、それを用いた処理装置およびそれによって得られる長尺部材
GB0819183D0 (en) * 2008-10-20 2008-11-26 Univ Gent Atomic layer deposition powder coating
TW201023341A (en) * 2008-12-12 2010-06-16 Ind Tech Res Inst Integrated circuit structure
US8135560B2 (en) 2009-01-30 2012-03-13 Applied Materials, Inc. Sensor system for semiconductor manufacturing apparatus
US8418418B2 (en) 2009-04-29 2013-04-16 3Form, Inc. Architectural panels with organic photovoltaic interlayers and methods of forming the same
CN102639749B (zh) 2009-10-14 2015-06-17 莲花应用技术有限责任公司 在原子层沉积系统中抑制过量前体在单独前体区之间运送
US9297076B2 (en) 2010-07-23 2016-03-29 Lotus Applied Technology, Llc Substrate transport mechanism contacting a single side of a flexible web substrate for roll-to-roll thin film deposition
JP5649431B2 (ja) * 2010-12-16 2015-01-07 株式会社神戸製鋼所 プラズマｃｖｄ装置
JP2013082959A (ja) * 2011-10-07 2013-05-09 Sony Corp 自己停止反応成膜装置及び自己停止反応成膜方法
US9435028B2 (en) * 2013-05-06 2016-09-06 Lotus Applied Technology, Llc Plasma generation for thin film deposition on flexible substrates
TWI498206B (zh) * 2014-09-04 2015-09-01 Univ Nat Central 連續式合成碳薄膜或無機材料薄膜之設備與方法
JP6697706B2 (ja) * 2015-12-07 2020-05-27 凸版印刷株式会社 原子層堆積装置
WO2022119893A1 (en) * 2020-12-03 2022-06-09 Lam Research Corporation Precursor dispensing systems with line charge volume containers for atomic layer deposition

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3884787A (en) * 1973-01-12 1975-05-20 Coulter Information Systems Sputtering method for thin film deposition on a substrate
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
DE2900772C2 (de) * 1979-01-10 1984-08-30 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Erzeugung von Schichten auf einer bandförmigen Trägerfolie
US4400409A (en) * 1980-05-19 1983-08-23 Energy Conversion Devices, Inc. Method of making p-doped silicon films
US4419381A (en) * 1982-01-12 1983-12-06 Semiconductor Energy Laboratory Co., Ltd. Method of making magnetic material layer
US4542711A (en) * 1981-03-16 1985-09-24 Sovonics Solar Systems Continuous system for depositing amorphous semiconductor material
US4438723A (en) * 1981-09-28 1984-03-27 Energy Conversion Devices, Inc. Multiple chamber deposition and isolation system and method
JPS5939664B2 (ja) * 1981-10-06 1984-09-25 工業技術院長 金属箔の表面に太陽熱選拓吸収皮膜を形成する方法
US4479369A (en) * 1983-04-04 1984-10-30 Sando Iron Works Co., Ltd. Apparatus for treating a textile product with the use of low-temperature plasma
GB2162207B (en) * 1984-07-26 1989-05-10 Japan Res Dev Corp Semiconductor crystal growth apparatus
US4968918A (en) * 1987-07-06 1990-11-06 Kanebo, Ltd. Apparatus for plasma treatment
US4902398A (en) * 1988-04-27 1990-02-20 American Thim Film Laboratories, Inc. Computer program for vacuum coating systems
DE3925536A1 (de) * 1989-08-02 1991-02-07 Leybold Ag Anordnung zur dickenmessung von duennschichten
US5338389A (en) * 1990-01-19 1994-08-16 Research Development Corporation Of Japan Method of epitaxially growing compound crystal and doping method therein
JP3073327B2 (ja) * 1992-06-30 2000-08-07 キヤノン株式会社 堆積膜形成方法
JP2642849B2 (ja) * 1993-08-24 1997-08-20 株式会社フロンテック 薄膜の製造方法および製造装置
JP3175894B2 (ja) * 1994-03-25 2001-06-11 株式会社半導体エネルギー研究所 プラズマ処理装置及びプラズマ処理方法
US5474648A (en) * 1994-07-29 1995-12-12 Lsi Logic Corporation Uniform and repeatable plasma processing
US5916365A (en) * 1996-08-16 1999-06-29 Sherman; Arthur Sequential chemical vapor deposition
US5891793A (en) * 1997-04-04 1999-04-06 Advanced Micro Devices, Inc. Transistor fabrication process employing a common chamber for gate oxide and gate conductor formation
DE19739833A1 (de) * 1997-09-11 1999-03-18 Leybold Systems Gmbh Folientransportvorrichtung
US6200893B1 (en) * 1999-03-11 2001-03-13 Genus, Inc Radical-assisted sequential CVD
US6258408B1 (en) * 1999-07-06 2001-07-10 Arun Madan Semiconductor vacuum deposition system and method having a reel-to-reel substrate cassette
EP1209252A3 (de) * 2000-09-15 2002-11-27 Shipley Co. L.L.C. Vorrichtung zum kontinuierlichen Beschichten
US6878402B2 (en) * 2000-12-06 2005-04-12 Novellus Systems, Inc. Method and apparatus for improved temperature control in atomic layer deposition
US6734020B2 (en) * 2001-03-07 2004-05-11 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
JP2003201570A (ja) * 2001-11-01 2003-07-18 Konica Corp 大気圧プラズマ処理装置、大気圧プラズマ処理方法及びそれを用いて作製した長尺フィルム

Also Published As

Publication number Publication date
US8440020B2 (en) 2013-05-14
EP1347077B1 (de) 2006-05-17
EP1347077A1 (de) 2003-09-24
DE60211470T2 (de) 2006-11-09
ES2263734T3 (es) 2006-12-16
PT1347077E (pt) 2006-09-29
DE60211470D1 (de) 2006-06-22
US20030172873A1 (en) 2003-09-18

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