ATE326556T1 - Vorrichtung und verfahren zur herstellung von flexiblen halbleiter-einrichtungen - Google Patents

Vorrichtung und verfahren zur herstellung von flexiblen halbleiter-einrichtungen

Info

Publication number
ATE326556T1
ATE326556T1 AT02076056T AT02076056T ATE326556T1 AT E326556 T1 ATE326556 T1 AT E326556T1 AT 02076056 T AT02076056 T AT 02076056T AT 02076056 T AT02076056 T AT 02076056T AT E326556 T1 ATE326556 T1 AT E326556T1
Authority
AT
Austria
Prior art keywords
flexible
semiconductor
semiconductor devices
deposited
computer
Prior art date
Application number
AT02076056T
Other languages
English (en)
Inventor
Diego Fischer
Pedro Torres
Original Assignee
Vhf Technologies Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vhf Technologies Sa filed Critical Vhf Technologies Sa
Application granted granted Critical
Publication of ATE326556T1 publication Critical patent/ATE326556T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/3277—Continuous moving of continuous material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Analytical Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Chemical Vapour Deposition (AREA)
  • Bipolar Transistors (AREA)
AT02076056T 2002-03-15 2002-03-15 Vorrichtung und verfahren zur herstellung von flexiblen halbleiter-einrichtungen ATE326556T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP02076056A EP1347077B1 (de) 2002-03-15 2002-03-15 Vorrichtung und Verfahren zur Herstellung von flexiblen Halbleiter-Einrichtungen

Publications (1)

Publication Number Publication Date
ATE326556T1 true ATE326556T1 (de) 2006-06-15

Family

ID=27771910

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02076056T ATE326556T1 (de) 2002-03-15 2002-03-15 Vorrichtung und verfahren zur herstellung von flexiblen halbleiter-einrichtungen

Country Status (6)

Country Link
US (1) US8440020B2 (de)
EP (1) EP1347077B1 (de)
AT (1) ATE326556T1 (de)
DE (1) DE60211470T2 (de)
ES (1) ES2263734T3 (de)
PT (1) PT1347077E (de)

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US20050223983A1 (en) * 2004-04-08 2005-10-13 Venkat Selvamanickam Chemical vapor deposition (CVD) apparatus usable in the manufacture of superconducting conductors
US20050223984A1 (en) * 2004-04-08 2005-10-13 Hee-Gyoun Lee Chemical vapor deposition (CVD) apparatus usable in the manufacture of superconducting conductors
US7259106B2 (en) * 2004-09-10 2007-08-21 Versatilis Llc Method of making a microelectronic and/or optoelectronic circuitry sheet
TWI328050B (en) * 2005-05-10 2010-08-01 Ulvac Inc Reeling type plasma cvd device
KR101314708B1 (ko) 2006-03-26 2013-10-10 로터스 어플라이드 테크놀로지, 엘엘씨 원자층 증착 시스템 및 연성 기판을 코팅하기 위한 방법
JP2007302928A (ja) * 2006-05-10 2007-11-22 Sumitomo Electric Ind Ltd 長尺基材連続処理用の搬送機構、それを用いた処理装置およびそれによって得られる長尺部材
GB0819183D0 (en) * 2008-10-20 2008-11-26 Univ Gent Atomic layer deposition powder coating
TW201023341A (en) * 2008-12-12 2010-06-16 Ind Tech Res Inst Integrated circuit structure
US8135560B2 (en) 2009-01-30 2012-03-13 Applied Materials, Inc. Sensor system for semiconductor manufacturing apparatus
US8418418B2 (en) 2009-04-29 2013-04-16 3Form, Inc. Architectural panels with organic photovoltaic interlayers and methods of forming the same
US8637117B2 (en) 2009-10-14 2014-01-28 Lotus Applied Technology, Llc Inhibiting excess precursor transport between separate precursor zones in an atomic layer deposition system
ES2617956T3 (es) 2010-07-23 2017-06-20 Lotus Applied Technology, Llc Mecanismo de transporte de sustrato que pone en contacto un único lado de un sustrato de banda flexible para una deposición de película fina de rollo a rollo
JP5649431B2 (ja) * 2010-12-16 2015-01-07 株式会社神戸製鋼所 プラズマｃｖｄ装置
JP2013082959A (ja) * 2011-10-07 2013-05-09 Sony Corp 自己停止反応成膜装置及び自己停止反応成膜方法
US9435028B2 (en) * 2013-05-06 2016-09-06 Lotus Applied Technology, Llc Plasma generation for thin film deposition on flexible substrates
TWI498206B (zh) * 2014-09-04 2015-09-01 Univ Nat Central 連續式合成碳薄膜或無機材料薄膜之設備與方法
JP6697706B2 (ja) * 2015-12-07 2020-05-27 凸版印刷株式会社 原子層堆積装置
CN116583624A (zh) 2020-12-03 2023-08-11 朗姆研究公司 用于原子层沉积的具有管线填充容积容器的前体分配系统

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Also Published As

Publication number Publication date
US8440020B2 (en) 2013-05-14
PT1347077E (pt) 2006-09-29
ES2263734T3 (es) 2006-12-16
DE60211470D1 (de) 2006-06-22
EP1347077A1 (de) 2003-09-24
DE60211470T2 (de) 2006-11-09
EP1347077B1 (de) 2006-05-17
US20030172873A1 (en) 2003-09-18

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