PT1347077E - Aparelho e metodo para a producao de dispositivos semicondutores flexiveis - Google Patents

Aparelho e metodo para a producao de dispositivos semicondutores flexiveis

Info

Publication number
PT1347077E
PT1347077E PT02076056T PT02076056T PT1347077E PT 1347077 E PT1347077 E PT 1347077E PT 02076056 T PT02076056 T PT 02076056T PT 02076056 T PT02076056 T PT 02076056T PT 1347077 E PT1347077 E PT 1347077E
Authority
PT
Portugal
Prior art keywords
flexible
semiconductor
semiconductor devices
deposited
computer
Prior art date
Application number
PT02076056T
Other languages
English (en)
Inventor
Diego Fischer
Torres Pedro
Original Assignee
Vhf Technologies Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vhf Technologies Sa filed Critical Vhf Technologies Sa
Publication of PT1347077E publication Critical patent/PT1347077E/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/3277—Continuous moving of continuous material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Analytical Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Bipolar Transistors (AREA)
PT02076056T 2002-03-15 2002-03-15 Aparelho e metodo para a producao de dispositivos semicondutores flexiveis PT1347077E (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP02076056A EP1347077B1 (en) 2002-03-15 2002-03-15 Apparatus and method for the production of flexible semiconductor devices

Publications (1)

Publication Number Publication Date
PT1347077E true PT1347077E (pt) 2006-09-29

Family

ID=27771910

Family Applications (1)

Application Number Title Priority Date Filing Date
PT02076056T PT1347077E (pt) 2002-03-15 2002-03-15 Aparelho e metodo para a producao de dispositivos semicondutores flexiveis

Country Status (6)

Country Link
US (1) US8440020B2 (pt)
EP (1) EP1347077B1 (pt)
AT (1) ATE326556T1 (pt)
DE (1) DE60211470T2 (pt)
ES (1) ES2263734T3 (pt)
PT (1) PT1347077E (pt)

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US20050223984A1 (en) * 2004-04-08 2005-10-13 Hee-Gyoun Lee Chemical vapor deposition (CVD) apparatus usable in the manufacture of superconducting conductors
US20050223983A1 (en) * 2004-04-08 2005-10-13 Venkat Selvamanickam Chemical vapor deposition (CVD) apparatus usable in the manufacture of superconducting conductors
US7259106B2 (en) * 2004-09-10 2007-08-21 Versatilis Llc Method of making a microelectronic and/or optoelectronic circuitry sheet
TWI328050B (en) * 2005-05-10 2010-08-01 Ulvac Inc Reeling type plasma cvd device
EP2000008B1 (en) 2006-03-26 2011-04-27 Lotus Applied Technology, Llc Atomic layer deposition system and method for coating flexible substrates
JP2007302928A (ja) * 2006-05-10 2007-11-22 Sumitomo Electric Ind Ltd 長尺基材連続処理用の搬送機構、それを用いた処理装置およびそれによって得られる長尺部材
GB0819183D0 (en) * 2008-10-20 2008-11-26 Univ Gent Atomic layer deposition powder coating
TW201023341A (en) * 2008-12-12 2010-06-16 Ind Tech Res Inst Integrated circuit structure
US8135560B2 (en) 2009-01-30 2012-03-13 Applied Materials, Inc. Sensor system for semiconductor manufacturing apparatus
WO2010126699A2 (en) 2009-04-29 2010-11-04 Hunter Douglas Industries B.V. Architectural panels with organic photovoltaic interlayers and methods of forming the same
BR112012008642A2 (pt) 2009-10-14 2017-06-13 Lotus Applied Tech Llc inibição de transporte de excesso de precursor entre zonas de precursor separadas em um sistema de deposição de camada atômica.
US9297076B2 (en) 2010-07-23 2016-03-29 Lotus Applied Technology, Llc Substrate transport mechanism contacting a single side of a flexible web substrate for roll-to-roll thin film deposition
JP5649431B2 (ja) * 2010-12-16 2015-01-07 株式会社神戸製鋼所 プラズマｃｖｄ装置
JP2013082959A (ja) * 2011-10-07 2013-05-09 Sony Corp 自己停止反応成膜装置及び自己停止反応成膜方法
US9435028B2 (en) * 2013-05-06 2016-09-06 Lotus Applied Technology, Llc Plasma generation for thin film deposition on flexible substrates
TWI498206B (zh) * 2014-09-04 2015-09-01 Univ Nat Central 連續式合成碳薄膜或無機材料薄膜之設備與方法
JP6697706B2 (ja) * 2015-12-07 2020-05-27 凸版印刷株式会社 原子層堆積装置
US20240003008A1 (en) * 2020-12-03 2024-01-04 Lam Research Corporation Precursor dispensing systems with line charge volume containers for atomic layer deposition

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US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
DE2900772C2 (de) * 1979-01-10 1984-08-30 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Erzeugung von Schichten auf einer bandförmigen Trägerfolie
US4400409A (en) * 1980-05-19 1983-08-23 Energy Conversion Devices, Inc. Method of making p-doped silicon films
US4419381A (en) * 1982-01-12 1983-12-06 Semiconductor Energy Laboratory Co., Ltd. Method of making magnetic material layer
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Also Published As

Publication number Publication date
EP1347077A1 (en) 2003-09-24
US8440020B2 (en) 2013-05-14
ATE326556T1 (de) 2006-06-15
DE60211470D1 (de) 2006-06-22
ES2263734T3 (es) 2006-12-16
DE60211470T2 (de) 2006-11-09
EP1347077B1 (en) 2006-05-17
US20030172873A1 (en) 2003-09-18

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