JP6547271B2 - フレシキブル基板上への気相成長法による成膜方法 - Google Patents
フレシキブル基板上への気相成長法による成膜方法 Download PDFInfo
- Publication number
- JP6547271B2 JP6547271B2 JP2014210299A JP2014210299A JP6547271B2 JP 6547271 B2 JP6547271 B2 JP 6547271B2 JP 2014210299 A JP2014210299 A JP 2014210299A JP 2014210299 A JP2014210299 A JP 2014210299A JP 6547271 B2 JP6547271 B2 JP 6547271B2
- Authority
- JP
- Japan
- Prior art keywords
- flexible substrate
- film
- zone
- film forming
- forming method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0073—Reactive sputtering by exposing the substrates to reactive gases intermittently
- C23C14/0078—Reactive sputtering by exposing the substrates to reactive gases intermittently by moving the substrates between spatially separate sputtering and reaction stations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
- H01J37/32761—Continuous moving
- H01J37/3277—Continuous moving of continuous material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Description
101 第1のゾーン
102 第2のゾーン
103 第3のゾーン
201 ローラー
202 ゾーンセパレーター
203 スパッタリングターゲット
204 スパッタリングターゲット
205 フレキシブル基板
Claims (8)
- フレキシブル基板上に薄膜を作製する成膜方法であって、
真空チャンバー内の、金属または珪素を含む原料ガスが導入された第1のゾーンを、前記フレキシブル基板に通過させ前記原料ガスに含まれる成分を前記フレキシブル基板に吸着させる工程と、
前記真空チャンバー内の、前記第1のゾーンと隔てられた、金属または珪素を含む複数のターゲット材を備えた第2のゾーンを、前記フレキシブル基板に通過させスパッタ成膜を行う工程とを含み、
前記スパッタ成膜を行う工程において、
2つの前記ターゲット材により前記フレキシブル基板の両面を挟んで両面成膜をする、
成膜方法。 - 前記第1のゾーンを前記フレキシブル基板に通過させる工程と前記第2のゾーンを前記フレキシブル基板に通過させる工程との間に、不活性ガスが導入された第3のゾーンを、前記フレキシブル基板に通過させる工程をさらに含む、請求項1に記載の成膜方法。
- 前記原料ガスに含まれる金属の成分が、前記ターゲット材に含まれる金属の成分と同じである、請求項1または2に記載の成膜方法。
- 前記原料ガスに含まれる金属の成分が、前記ターゲット材に含まれる金属の成分とは異なる、請求項1または2に記載の成膜方法。
- 前記ターゲット材が、珪素を含む、請求項1または2に記載の成膜方法。
- 前記スパッタ成膜を行う工程において前記フレキシブル基板の両面を挟む2つの前記ターゲット材は、含まれる材質の成分または当該成分の割合が相異なる、請求項1、2及び5のいずれかに記載の成膜方法。
- 前記第2のゾーンでは、反応性スパッタにより成膜が行われる、請求項1〜6のいずれかに記載の成膜方法。
- 前記第2のゾーンを、前記フレキシブル基板が1回通過した時に成膜されるスパッタ膜の膜厚が0.2nm以上である、請求項1〜7のいずれかに記載の成膜方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014210299A JP6547271B2 (ja) | 2014-10-14 | 2014-10-14 | フレシキブル基板上への気相成長法による成膜方法 |
CN201580055179.3A CN106795623A (zh) | 2014-10-14 | 2015-10-13 | 通过气相沉积法在挠性基板上成膜的方法 |
KR1020177012562A KR20170067847A (ko) | 2014-10-14 | 2015-10-13 | 플렉시블 기판 상에의 기상 성장법에 의한 성막 방법 |
PCT/JP2015/005176 WO2016059789A1 (ja) | 2014-10-14 | 2015-10-13 | フレキシブル基板上への気相成長法による成膜方法 |
EP15850658.4A EP3208363A4 (en) | 2014-10-14 | 2015-10-13 | Method for forming film on flexible substrate using vapor phase deposition method |
US15/481,797 US20170211177A1 (en) | 2014-10-14 | 2017-04-07 | Method for forming film on flexible substrate by vapor deposition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014210299A JP6547271B2 (ja) | 2014-10-14 | 2014-10-14 | フレシキブル基板上への気相成長法による成膜方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016079438A JP2016079438A (ja) | 2016-05-16 |
JP6547271B2 true JP6547271B2 (ja) | 2019-07-24 |
Family
ID=55746349
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014210299A Expired - Fee Related JP6547271B2 (ja) | 2014-10-14 | 2014-10-14 | フレシキブル基板上への気相成長法による成膜方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20170211177A1 (ja) |
EP (1) | EP3208363A4 (ja) |
JP (1) | JP6547271B2 (ja) |
KR (1) | KR20170067847A (ja) |
CN (1) | CN106795623A (ja) |
WO (1) | WO2016059789A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106715752B (zh) | 2014-09-19 | 2020-03-20 | 凸版印刷株式会社 | 成膜装置以及成膜方法 |
JP6672595B2 (ja) * | 2015-03-17 | 2020-03-25 | 凸版印刷株式会社 | 成膜装置 |
KR102595355B1 (ko) * | 2017-12-28 | 2023-10-30 | 삼성디스플레이 주식회사 | 증착 장치 및 그것을 이용한 증착 방법 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59179783A (ja) * | 1983-03-31 | 1984-10-12 | Toshiba Corp | スパツタリングタ−ゲツト |
US4420385A (en) * | 1983-04-15 | 1983-12-13 | Gryphon Products | Apparatus and process for sputter deposition of reacted thin films |
US4851095A (en) * | 1988-02-08 | 1989-07-25 | Optical Coating Laboratory, Inc. | Magnetron sputtering apparatus and process |
JPH07176481A (ja) * | 1993-12-20 | 1995-07-14 | Ulvac Japan Ltd | 多層膜作成装置 |
JPH09307128A (ja) * | 1996-05-20 | 1997-11-28 | Fuji Electric Co Ltd | 薄膜光電変換素子の製造装置および製造方法 |
JP3386677B2 (ja) * | 1996-08-13 | 2003-03-17 | 日立金属株式会社 | 金属シリサイドタ−ゲット材 |
US6186090B1 (en) * | 1999-03-04 | 2001-02-13 | Energy Conversion Devices, Inc. | Apparatus for the simultaneous deposition by physical vapor deposition and chemical vapor deposition and method therefor |
JP4580496B2 (ja) * | 2000-03-31 | 2010-11-10 | 大日本印刷株式会社 | プラズマ処理装置およびプラズマ処理方法 |
US6661622B1 (en) * | 2000-07-17 | 2003-12-09 | International Business Machines Corporation | Method to achieve low and stable ferromagnetic coupling field |
JP4720464B2 (ja) * | 2004-11-30 | 2011-07-13 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置並びに記憶媒体 |
US20070068794A1 (en) * | 2005-09-23 | 2007-03-29 | Barret Lippey | Anode reactive dual magnetron sputtering |
JP2007248562A (ja) * | 2006-03-14 | 2007-09-27 | Shincron:Kk | 光学物品およびその製造方法 |
ATE507320T1 (de) * | 2006-03-26 | 2011-05-15 | Lotus Applied Technology Llc | Atomlagenabscheidungssystem und verfahren zur beschichtung von flexiblen substraten |
US20070281089A1 (en) * | 2006-06-05 | 2007-12-06 | General Electric Company | Systems and methods for roll-to-roll atomic layer deposition on continuously fed objects |
US20100078312A1 (en) * | 2008-09-26 | 2010-04-01 | Tango Systems, Inc. | Sputtering Chamber Having ICP Coil and Targets on Top Wall |
TW201034228A (en) * | 2008-12-05 | 2010-09-16 | Solopower Inc | Method and apparatus for forming contact layers for continuous workpieces |
JP5434484B2 (ja) * | 2009-11-02 | 2014-03-05 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
JP5621258B2 (ja) * | 2009-12-28 | 2014-11-12 | ソニー株式会社 | 成膜装置および成膜方法 |
US8637123B2 (en) * | 2009-12-29 | 2014-01-28 | Lotus Applied Technology, Llc | Oxygen radical generation for radical-enhanced thin film deposition |
JP5648402B2 (ja) * | 2010-09-30 | 2015-01-07 | 住友金属鉱山株式会社 | スパッタリング装置、スパッタリング方法及び金属ベース層付樹脂フィルムの製造方法 |
JP5787779B2 (ja) * | 2012-01-25 | 2015-09-30 | 日東電工株式会社 | 導電性フィルムロールの製造方法 |
JP2014027191A (ja) * | 2012-07-30 | 2014-02-06 | Hitachi High-Technologies Corp | 光cvd膜の製造方法、及び光cvd膜の製造装置 |
-
2014
- 2014-10-14 JP JP2014210299A patent/JP6547271B2/ja not_active Expired - Fee Related
-
2015
- 2015-10-13 WO PCT/JP2015/005176 patent/WO2016059789A1/ja active Application Filing
- 2015-10-13 CN CN201580055179.3A patent/CN106795623A/zh active Pending
- 2015-10-13 KR KR1020177012562A patent/KR20170067847A/ko unknown
- 2015-10-13 EP EP15850658.4A patent/EP3208363A4/en not_active Withdrawn
-
2017
- 2017-04-07 US US15/481,797 patent/US20170211177A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP2016079438A (ja) | 2016-05-16 |
EP3208363A4 (en) | 2018-05-16 |
CN106795623A (zh) | 2017-05-31 |
US20170211177A1 (en) | 2017-07-27 |
KR20170067847A (ko) | 2017-06-16 |
EP3208363A1 (en) | 2017-08-23 |
WO2016059789A1 (ja) | 2016-04-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20150096495A1 (en) | Apparatus and method of atomic layer deposition | |
US20100221426A1 (en) | Web Substrate Deposition System | |
JP2009540122A5 (ja) | ||
JP2002541332A5 (ja) | ||
JP6547271B2 (ja) | フレシキブル基板上への気相成長法による成膜方法 | |
KR20150131265A (ko) | 회전 플래튼 및 챔버를 위한 플라즈마 소스 | |
JP2014534336A (ja) | 大気圧プラズマ法によるコーティング作製方法 | |
KR20170069229A (ko) | 혼합 산화물 장벽 피막의 고속 증착 | |
JP6672595B2 (ja) | 成膜装置 | |
EP3653750B1 (en) | Device and method for coating surface of porous substrate | |
JP2004263299A5 (ja) | 成膜装置及び成膜方法 | |
JP5724504B2 (ja) | 原子層堆積法成膜装置における回転ドラムおよび原子層堆積法成膜装置 | |
JP2012201900A (ja) | 成膜装置 | |
JP5733507B2 (ja) | 成膜方法 | |
JP2010150661A (ja) | 化学気相堆積システム | |
KR20170137855A (ko) | 적층체 및 그 제조 방법 | |
JP5768962B2 (ja) | 原子層堆積法成膜装置における成膜処理ドラム | |
JP6529129B2 (ja) | 成膜装置 | |
WO2018210273A1 (zh) | 一种具有同一等离子体源的原子层沉积装置及方法 | |
JP5803488B2 (ja) | 原子層堆積法によるフレキシブル基板への成膜方法及び成膜装置 | |
JP5736857B2 (ja) | 成膜装置 | |
JP5357083B2 (ja) | 薄膜形成装置および薄膜形成方法 | |
Johansson | Surface Modification of Plastics: Atomic Layer Deposition | |
JP2016074927A (ja) | 成膜装置及び成膜方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170922 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20181023 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181213 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190528 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190610 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6547271 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |