AU2003282836A1 - Atomic layer deposition of noble metals - Google Patents

Atomic layer deposition of noble metals

Info

Publication number
AU2003282836A1
AU2003282836A1 AU2003282836A AU2003282836A AU2003282836A1 AU 2003282836 A1 AU2003282836 A1 AU 2003282836A1 AU 2003282836 A AU2003282836 A AU 2003282836A AU 2003282836 A AU2003282836 A AU 2003282836A AU 2003282836 A1 AU2003282836 A1 AU 2003282836A1
Authority
AU
Australia
Prior art keywords
layer deposition
atomic layer
noble metals
noble
metals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003282836A
Other versions
AU2003282836A8 (en
Inventor
Toh-Ming Lu
John J. Senkevich
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rensselaer Polytechnic Institute
Original Assignee
Rensselaer Polytechnic Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rensselaer Polytechnic Institute filed Critical Rensselaer Polytechnic Institute
Publication of AU2003282836A1 publication Critical patent/AU2003282836A1/en
Publication of AU2003282836A8 publication Critical patent/AU2003282836A8/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12229—Intermediate article [e.g., blank, etc.]
    • Y10T428/12271—Intermediate article [e.g., blank, etc.] having discrete fastener, marginal fastening, taper, or end structure
    • Y10T428/12285—Single taper [e.g., ingot, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
AU2003282836A 2002-10-15 2003-10-15 Atomic layer deposition of noble metals Abandoned AU2003282836A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US41851902P 2002-10-15 2002-10-15
US60/418,519 2002-10-15
PCT/US2003/032644 WO2004035858A2 (en) 2002-10-15 2003-10-15 Atomic layer deposition of noble metals

Publications (2)

Publication Number Publication Date
AU2003282836A1 true AU2003282836A1 (en) 2004-05-04
AU2003282836A8 AU2003282836A8 (en) 2004-05-04

Family

ID=32107939

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003282836A Abandoned AU2003282836A1 (en) 2002-10-15 2003-10-15 Atomic layer deposition of noble metals

Country Status (3)

Country Link
US (1) US20060093848A1 (en)
AU (1) AU2003282836A1 (en)
WO (1) WO2004035858A2 (en)

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US7494927B2 (en) * 2000-05-15 2009-02-24 Asm International N.V. Method of growing electrical conductors
US8101243B2 (en) 2002-04-03 2012-01-24 Colorado School Of Mines Method of making sulfur-resistant composite metal membranes
EP1499452B1 (en) * 2002-04-03 2013-12-18 Colorado School Of Mines Process for preparing palladium alloy composite membranes for use in hydrogen separation
US7211509B1 (en) 2004-06-14 2007-05-01 Novellus Systems, Inc, Method for enhancing the nucleation and morphology of ruthenium films on dielectric substrates using amine containing compounds
US7309658B2 (en) * 2004-11-22 2007-12-18 Intermolecular, Inc. Molecular self-assembly in substrate processing
US7666773B2 (en) * 2005-03-15 2010-02-23 Asm International N.V. Selective deposition of noble metal thin films
US8025922B2 (en) 2005-03-15 2011-09-27 Asm International N.V. Enhanced deposition of noble metals
US20070014919A1 (en) * 2005-07-15 2007-01-18 Jani Hamalainen Atomic layer deposition of noble metal oxides
US7473637B2 (en) * 2005-07-20 2009-01-06 Micron Technology, Inc. ALD formed titanium nitride films
US7632351B2 (en) * 2005-08-08 2009-12-15 E. I. Du Pont De Nemours And Company Atomic layer deposition processes for the formation of ruthenium films, and ruthenium precursors useful in such processes
KR101379015B1 (en) 2006-02-15 2014-03-28 한국에이에스엠지니텍 주식회사 METHOD OF DEPOSITING Ru FILM USING PEALD AND DENSE Ru FILM
KR20160062181A (en) * 2006-04-10 2016-06-01 솔베이 플루오르 게엠베하 Etching process
WO2008027646A2 (en) * 2006-06-23 2008-03-06 Colorado School Of Mines Sulfur-resistant composite metal membranes
US7435484B2 (en) * 2006-09-01 2008-10-14 Asm Japan K.K. Ruthenium thin film-formed structure
US20080124484A1 (en) * 2006-11-08 2008-05-29 Asm Japan K.K. Method of forming ru film and metal wiring structure
US7704858B2 (en) * 2007-03-29 2010-04-27 Intel Corporation Methods of forming nickel silicide layers with low carbon content
US9044715B2 (en) * 2007-08-22 2015-06-02 Colorado School Of Mines Unsupported palladium alloy membranes and methods of making same
US20090087339A1 (en) * 2007-09-28 2009-04-02 Asm Japan K.K. METHOD FOR FORMING RUTHENIUM COMPLEX FILM USING Beta-DIKETONE-COORDINATED RUTHENIUM PRECURSOR
KR101544198B1 (en) * 2007-10-17 2015-08-12 한국에이에스엠지니텍 주식회사 Method of depositing ruthenium film
US7655564B2 (en) 2007-12-12 2010-02-02 Asm Japan, K.K. Method for forming Ta-Ru liner layer for Cu wiring
KR20090067505A (en) * 2007-12-21 2009-06-25 에이에스엠지니텍코리아 주식회사 Method of depositing ruthenium film
US7799674B2 (en) * 2008-02-19 2010-09-21 Asm Japan K.K. Ruthenium alloy film for copper interconnects
US8084104B2 (en) * 2008-08-29 2011-12-27 Asm Japan K.K. Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition
US8133555B2 (en) 2008-10-14 2012-03-13 Asm Japan K.K. Method for forming metal film by ALD using beta-diketone metal complex
TW201014926A (en) * 2008-10-15 2010-04-16 Nat Univ Tsing Hua Method for producing metallic oxide film having high dielectric constant
US8163341B2 (en) * 2008-11-19 2012-04-24 Micron Technology, Inc. Methods of forming metal-containing structures, and methods of forming germanium-containing structures
US9379011B2 (en) 2008-12-19 2016-06-28 Asm International N.V. Methods for depositing nickel films and for making nickel silicide and nickel germanide
US20110020546A1 (en) * 2009-05-15 2011-01-27 Asm International N.V. Low Temperature ALD of Noble Metals
US8329569B2 (en) 2009-07-31 2012-12-11 Asm America, Inc. Deposition of ruthenium or ruthenium dioxide
DE102009041264A1 (en) 2009-09-11 2011-03-24 IPHT Jena Institut für Photonische Technologien e.V. Method for producing optically active nano-structures that are utilized for e.g. surface enhanced Raman scattering spectroscopy, involves selecting characteristics by presetting position, size, shape and composition of nano-structures
US8778058B2 (en) 2010-07-16 2014-07-15 Colorado School Of Mines Multilayer sulfur-resistant composite metal membranes and methods of making and repairing the same
DE102010036256B4 (en) * 2010-09-03 2018-09-27 Epcos Ag Microacoustic device and manufacturing process
CA2751947C (en) * 2010-09-29 2018-10-16 Econous Systems Inc. Surface-oriented antibody coating for the reduction of post-stent restenosis
US8647723B2 (en) * 2010-10-22 2014-02-11 GM Global Technology Operations LLC Nucleation of ultrathin, continuous, conformal metal films using atomic layer deposition and application as fuel cell catalysts
US8871617B2 (en) 2011-04-22 2014-10-28 Asm Ip Holding B.V. Deposition and reduction of mixed metal oxide thin films
US9979028B2 (en) 2013-12-13 2018-05-22 GM Global Technology Operations LLC Conformal thin film of precious metal on a support
US9607842B1 (en) 2015-10-02 2017-03-28 Asm Ip Holding B.V. Methods of forming metal silicides
US10731250B2 (en) 2017-06-06 2020-08-04 Lam Research Corporation Depositing ruthenium layers in interconnect metallization
CN116377420A (en) * 2017-06-23 2023-07-04 默克专利有限公司 Atomic layer deposition method for selective film growth
US11124874B2 (en) 2018-10-25 2021-09-21 Applied Materials, Inc. Methods for depositing metallic iridium and iridium silicide
US20210138503A1 (en) * 2019-11-13 2021-05-13 Hzo, Inc. Functional Termination of Parylene in Vacuum
WO2024008624A1 (en) 2022-07-06 2024-01-11 Basf Se Process for preparing of transition metal-containing films

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6482262B1 (en) * 1959-10-10 2002-11-19 Asm Microchemistry Oy Deposition of transition metal carbides
US6342277B1 (en) * 1996-08-16 2002-01-29 Licensee For Microelectronics: Asm America, Inc. Sequential chemical vapor deposition
US6203613B1 (en) * 1999-10-19 2001-03-20 International Business Machines Corporation Atomic layer deposition with nitrate containing precursors
US6482740B2 (en) * 2000-05-15 2002-11-19 Asm Microchemistry Oy Method of growing electrical conductors by reducing metal oxide film with organic compound containing -OH, -CHO, or -COOH
US6527855B2 (en) * 2000-10-10 2003-03-04 Rensselaer Polytechnic Institute Atomic layer deposition of cobalt from cobalt metallorganic compounds
WO2002045167A2 (en) * 2000-11-30 2002-06-06 Asm International N.V. Thin films for magnetic devices
US20020182385A1 (en) * 2001-05-29 2002-12-05 Rensselaer Polytechnic Institute Atomic layer passivation
US6482656B1 (en) * 2001-06-04 2002-11-19 Advanced Micro Devices, Inc. Method of electrochemical formation of high Tc superconducting damascene interconnect for integrated circuit
US6656526B2 (en) * 2001-09-20 2003-12-02 Hewlett-Packard Development Company, L.P. Porously coated open-structure substrate and method of manufacture thereof

Also Published As

Publication number Publication date
WO2004035858A3 (en) 2004-11-04
WO2004035858A2 (en) 2004-04-29
AU2003282836A8 (en) 2004-05-04
US20060093848A1 (en) 2006-05-04

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase