WO2004035858A3 - Atomic layer deposition of noble metals - Google Patents

Atomic layer deposition of noble metals Download PDF

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Publication number
WO2004035858A3
WO2004035858A3 PCT/US2003/032644 US0332644W WO2004035858A3 WO 2004035858 A3 WO2004035858 A3 WO 2004035858A3 US 0332644 W US0332644 W US 0332644W WO 2004035858 A3 WO2004035858 A3 WO 2004035858A3
Authority
WO
WIPO (PCT)
Prior art keywords
metal
layer deposition
atomic layer
noble metals
dielectrics
Prior art date
Application number
PCT/US2003/032644
Other languages
French (fr)
Other versions
WO2004035858A2 (en
Inventor
John J Senkevich
Toh-Ming Lu
Original Assignee
Rensselaer Polytech Inst
John J Senkevich
Toh-Ming Lu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rensselaer Polytech Inst, John J Senkevich, Toh-Ming Lu filed Critical Rensselaer Polytech Inst
Priority to US10/531,245 priority Critical patent/US20060093848A1/en
Priority to AU2003282836A priority patent/AU2003282836A1/en
Publication of WO2004035858A2 publication Critical patent/WO2004035858A2/en
Publication of WO2004035858A3 publication Critical patent/WO2004035858A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12229—Intermediate article [e.g., blank, etc.]
    • Y10T428/12271—Intermediate article [e.g., blank, etc.] having discrete fastener, marginal fastening, taper, or end structure
    • Y10T428/12285—Single taper [e.g., ingot, etc.]

Abstract

The present invention relates to ALD processes for deposition of a metal selected from Pd, Rh, Ru, Pt and Ir wherein a layer including the metal is formed on a surface composed of a material selected from W, Ta, Cu, Ni, Co, Fe, Mn, Cr, V Nb, tungsten nitride, tantalum nitride, titanium nitride, dielectrics and activated dielectrics at a temperature ranging from >60°C to <260°C. The layer is formed by sequentially pulsing into a chamber containing said surface a precursor for the metal and a reducing gas selected from hydrogen, glyoxylic acid, oxalic acid, formaldehyde, 2-propanol, imidazole and plasma-activated hydrogen.
PCT/US2003/032644 2002-10-15 2003-10-15 Atomic layer deposition of noble metals WO2004035858A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/531,245 US20060093848A1 (en) 2002-10-15 2003-10-15 Atomic layer deposition of noble metals
AU2003282836A AU2003282836A1 (en) 2002-10-15 2003-10-15 Atomic layer deposition of noble metals

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US41851902P 2002-10-15 2002-10-15
US60/418,519 2002-10-15

Publications (2)

Publication Number Publication Date
WO2004035858A2 WO2004035858A2 (en) 2004-04-29
WO2004035858A3 true WO2004035858A3 (en) 2004-11-04

Family

ID=32107939

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/032644 WO2004035858A2 (en) 2002-10-15 2003-10-15 Atomic layer deposition of noble metals

Country Status (3)

Country Link
US (1) US20060093848A1 (en)
AU (1) AU2003282836A1 (en)
WO (1) WO2004035858A2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8927403B2 (en) 2005-03-15 2015-01-06 Asm International N.V. Selective deposition of noble metal thin films
US9129897B2 (en) 2008-12-19 2015-09-08 Asm International N.V. Metal silicide, metal germanide, methods for making the same
US9379011B2 (en) 2008-12-19 2016-06-28 Asm International N.V. Methods for depositing nickel films and for making nickel silicide and nickel germanide
US9587307B2 (en) 2005-03-15 2017-03-07 Asm International N.V. Enhanced deposition of noble metals

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US7494927B2 (en) * 2000-05-15 2009-02-24 Asm International N.V. Method of growing electrical conductors
US8101243B2 (en) 2002-04-03 2012-01-24 Colorado School Of Mines Method of making sulfur-resistant composite metal membranes
EP1499452B1 (en) * 2002-04-03 2013-12-18 Colorado School Of Mines Process for preparing palladium alloy composite membranes for use in hydrogen separation
US7211509B1 (en) 2004-06-14 2007-05-01 Novellus Systems, Inc, Method for enhancing the nucleation and morphology of ruthenium films on dielectric substrates using amine containing compounds
WO2006058034A2 (en) * 2004-11-22 2006-06-01 Intermolecular, Inc. Molecular self-assembly in substrate processing
US20070014919A1 (en) * 2005-07-15 2007-01-18 Jani Hamalainen Atomic layer deposition of noble metal oxides
US7473637B2 (en) * 2005-07-20 2009-01-06 Micron Technology, Inc. ALD formed titanium nitride films
US7632351B2 (en) 2005-08-08 2009-12-15 E. I. Du Pont De Nemours And Company Atomic layer deposition processes for the formation of ruthenium films, and ruthenium precursors useful in such processes
KR101379015B1 (en) 2006-02-15 2014-03-28 한국에이에스엠지니텍 주식회사 METHOD OF DEPOSITING Ru FILM USING PEALD AND DENSE Ru FILM
WO2007116033A1 (en) * 2006-04-10 2007-10-18 Solvay Fluor Gmbh Etching process
WO2008027646A2 (en) * 2006-06-23 2008-03-06 Colorado School Of Mines Sulfur-resistant composite metal membranes
US7435484B2 (en) * 2006-09-01 2008-10-14 Asm Japan K.K. Ruthenium thin film-formed structure
US20080124484A1 (en) * 2006-11-08 2008-05-29 Asm Japan K.K. Method of forming ru film and metal wiring structure
US7704858B2 (en) * 2007-03-29 2010-04-27 Intel Corporation Methods of forming nickel silicide layers with low carbon content
US9044715B2 (en) * 2007-08-22 2015-06-02 Colorado School Of Mines Unsupported palladium alloy membranes and methods of making same
US20090087339A1 (en) * 2007-09-28 2009-04-02 Asm Japan K.K. METHOD FOR FORMING RUTHENIUM COMPLEX FILM USING Beta-DIKETONE-COORDINATED RUTHENIUM PRECURSOR
KR101544198B1 (en) * 2007-10-17 2015-08-12 한국에이에스엠지니텍 주식회사 Method of depositing ruthenium film
US7655564B2 (en) 2007-12-12 2010-02-02 Asm Japan, K.K. Method for forming Ta-Ru liner layer for Cu wiring
KR20090067505A (en) * 2007-12-21 2009-06-25 에이에스엠지니텍코리아 주식회사 Method of depositing ruthenium film
US7799674B2 (en) * 2008-02-19 2010-09-21 Asm Japan K.K. Ruthenium alloy film for copper interconnects
US8084104B2 (en) * 2008-08-29 2011-12-27 Asm Japan K.K. Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition
US8133555B2 (en) 2008-10-14 2012-03-13 Asm Japan K.K. Method for forming metal film by ALD using beta-diketone metal complex
TW201014926A (en) * 2008-10-15 2010-04-16 Nat Univ Tsing Hua Method for producing metallic oxide film having high dielectric constant
US8163341B2 (en) * 2008-11-19 2012-04-24 Micron Technology, Inc. Methods of forming metal-containing structures, and methods of forming germanium-containing structures
US20110020546A1 (en) * 2009-05-15 2011-01-27 Asm International N.V. Low Temperature ALD of Noble Metals
US8329569B2 (en) 2009-07-31 2012-12-11 Asm America, Inc. Deposition of ruthenium or ruthenium dioxide
DE102009041264A1 (en) 2009-09-11 2011-03-24 IPHT Jena Institut für Photonische Technologien e.V. Method for producing optically active nano-structures that are utilized for e.g. surface enhanced Raman scattering spectroscopy, involves selecting characteristics by presetting position, size, shape and composition of nano-structures
US8778058B2 (en) 2010-07-16 2014-07-15 Colorado School Of Mines Multilayer sulfur-resistant composite metal membranes and methods of making and repairing the same
DE102010036256B4 (en) * 2010-09-03 2018-09-27 Epcos Ag Microacoustic device and manufacturing process
US9150646B2 (en) * 2010-09-29 2015-10-06 Econous Systems Inc. Surface-oriented antibody coating for the reduction of post-stent restenosis
US8647723B2 (en) * 2010-10-22 2014-02-11 GM Global Technology Operations LLC Nucleation of ultrathin, continuous, conformal metal films using atomic layer deposition and application as fuel cell catalysts
US9979028B2 (en) 2013-12-13 2018-05-22 GM Global Technology Operations LLC Conformal thin film of precious metal on a support
US9607842B1 (en) 2015-10-02 2017-03-28 Asm Ip Holding B.V. Methods of forming metal silicides
US10731250B2 (en) 2017-06-06 2020-08-04 Lam Research Corporation Depositing ruthenium layers in interconnect metallization
CN116377420A (en) * 2017-06-23 2023-07-04 默克专利有限公司 Atomic layer deposition method for selective film growth
WO2020086175A1 (en) 2018-10-25 2020-04-30 Applied Materials, Inc. Methods for depositing metallic iridium and iridium silicide
US20210138503A1 (en) * 2019-11-13 2021-05-13 Hzo, Inc. Functional Termination of Parylene in Vacuum
WO2024008624A1 (en) 2022-07-06 2024-01-11 Basf Se Process for preparing of transition metal-containing films

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US20020081381A1 (en) * 2000-10-10 2002-06-27 Rensselaer Polytechnic Institute Atomic layer deposition of cobalt from cobalt metallorganic compounds

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WO2001088972A1 (en) * 2000-05-15 2001-11-22 Asm Microchemistry Oy Process for producing integrated circuits
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WO2002045167A2 (en) * 2000-11-30 2002-06-06 Asm International N.V. Thin films for magnetic devices

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8927403B2 (en) 2005-03-15 2015-01-06 Asm International N.V. Selective deposition of noble metal thin films
US9469899B2 (en) 2005-03-15 2016-10-18 Asm International N.V. Selective deposition of noble metal thin films
US9587307B2 (en) 2005-03-15 2017-03-07 Asm International N.V. Enhanced deposition of noble metals
US9129897B2 (en) 2008-12-19 2015-09-08 Asm International N.V. Metal silicide, metal germanide, methods for making the same
US9379011B2 (en) 2008-12-19 2016-06-28 Asm International N.V. Methods for depositing nickel films and for making nickel silicide and nickel germanide

Also Published As

Publication number Publication date
AU2003282836A8 (en) 2004-05-04
AU2003282836A1 (en) 2004-05-04
US20060093848A1 (en) 2006-05-04
WO2004035858A2 (en) 2004-04-29

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