TW202419670A - 選擇性沉積氮化矽之方法與包括經組態以執行此方法的控制器的系統及包括經選擇性沉積之氮化矽層的結構 - Google Patents

選擇性沉積氮化矽之方法與包括經組態以執行此方法的控制器的系統及包括經選擇性沉積之氮化矽層的結構 Download PDF

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TW202419670A
TW202419670A TW112124823A TW112124823A TW202419670A TW 202419670 A TW202419670 A TW 202419670A TW 112124823 A TW112124823 A TW 112124823A TW 112124823 A TW112124823 A TW 112124823A TW 202419670 A TW202419670 A TW 202419670A
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reaction chamber
during
gas
deposition
silicon nitride
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TW112124823A
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阿貢 塞蒂亞迪
松田鴻
川原潤
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荷蘭商Ａｓｍ Ｉｐ私人控股有限公司
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Abstract

本發明揭示一種將氮化矽相對於第二材料選擇性地沉積於第一材料上之方法。一種例示性方法包括執行一或多個沉積循環及執行一處理製程。

Description

選擇性沉積氮化矽之方法及包括經選擇性沉積之氮化矽層的結構
本揭示大致係關於形成薄膜之方法及包括薄膜之結構。更特定言之，本揭示係關於形成包括氮化矽層之結構之方法及包括氮化矽層之結構。
氮化矽膜被用於相當多樣的應用。舉例而言，氮化矽膜可用於在形成電子裝置期間形成之結構上形成絕緣區、蝕刻終止區、抗蝕刻保護區及其類似者。
為了形成包括氮化矽之區或特徵，氮化矽膜通常沉積至基板表面上。接著使用例如微影將經沉積膜圖案化，且接著蝕刻膜以移除氮化矽中之一些以形成包括剩餘氮化矽材料之所需特徵或區域。隨著裝置特徵之大小持續減小，圖案化及蝕刻氮化矽膜以形成具有所需尺寸之圖案化氮化矽的特徵或區域變得愈來愈難。另外，微影術及蝕刻步驟會增加與裝置製造相關的成本並增加裝置製造所需的時間量。
近來，已研發用以在基板表面之一部分上選擇性地形成氮化矽之技術。此等技術通常包括在沉積之前對表面進行化學改質。儘管此等技術可很好地用於一些應用，但此等技術可在基板表面上引入非所要污染。此等製程亦可增加形成結構之製程的複雜性。
因此，需要用改良方法來形成包括氮化矽膜之結構。
本節提出之任何討論，包括問題及解決方案的討論，僅為了提供本發明背景脈絡之目的而包括在本發明中。這類討論不應視為承認任何或全部資訊在完成本發明時為已知，或以其他方式構成先前技術。
本揭示之各種實施例係關於一種在基板表面上選擇性地沉積氮化矽之方法。儘管在下文更詳細地論述了本揭示之各種實施例解決先前方法之缺陷的方式，但大體而言，本揭示之各種實施例提供相對於第二表面（例如，第二材料）在第一表面（例如第一材料）上選擇性地沉積氮化矽之經改良方法。
根據本揭示之至少一個實施例，提供一種用於相對於第二表面在第一表面上選擇性地沉積氮化矽之方法。方法可包括：在一反應器之一反應室內提供一基板；執行一或多個沉積循環；及執行一處理製程。根據本揭示之實例，基板可包括包含一第一材料及一第二材料之一表面。根據其他實例，執行一或多個沉積循環之步驟包括：在一前驅物脈衝時段將一矽前驅物脈衝至反應室；將一反應物氣體提供至反應室；及在一沉積電漿時段提供一沉積電漿功率以自反應物氣體形成活化物質。根據又其他實例，執行一處理製程之步驟包括：將一處理氣體提供至反應室；及在一處理電漿時段提供一處理電漿功率以自處理氣體形成活化物質。反應物氣體可包括一反應物及處理氣體。根據本揭示之實例，一處理氣體在執行處理製程期間之一流率大於處理氣體在執行一或多個沉積循環之步驟期間之一流率。第一表面可包括例如氮化矽或矽或其類似者。第二表面可包括一金屬氧化物、氧化矽、一金屬或其類似者。矽前驅物可包括一矽烷、一矽烷胺、一胺基矽烷、一鹵化矽化合物或其類似者中之一或多者。根據其他實例，沉積電漿功率大於處理電漿功率。根據又其他實例，執行一或多個沉積循環期間反應室內之一壓力大於執行處理製程期間反應室內之一壓力。根據又額外實例，處理氣體不包含反應物。根據其他實例，沉積電漿時段之一持續時間小於處理電漿時段之一持續時間。方法可包括在一或多個沉積循環之後且在處理製程之前的一過渡時段。根據實例，反應室內之壓力在過渡時段期間降低。根據額外實施例，處理氣體至反應室之一流率在過渡時段期間增加。
依據本揭露之額外實施例，提供一種結構。一種結構可包括：一基板，其包含包含一第一材料及一第二材料之一表面；及一氮化矽層，其相對於第二材料選擇性地形成於第一材料上。氮化矽層可使用本文中所描述之方法形成。
根據本揭示之又額外實施例，提供一種系統。系統可包括：一反應器，其包含一反應室；及一控制器，其經組態以執行如本文中所描述之方法。
本領域具通常知識者從下列參考附圖之某些實施例的詳細描述將輕易明白此等及其他實施例。本發明並未受限於任何所揭示之特定實施例。
雖然下文揭示某些實施例及實例，但本領域具通常知識者將理解，本發明延伸超出具體揭示的實施例及/或本發明之用途以及其等明顯的修改及等效物。因此，所揭示本發明的範疇應不受下文所描述的特定揭示的實施例限制。
本揭示之例示性實施例提供用於在基板表面上選擇性地沉積氮化矽之經改良方法。例示性方法可用於相對於第二材料在第一材料上選擇性地沉積氮化矽，而無需在沉積氮化矽之前採用先前原位或異位表面處理。因此，可減輕或避免可能另外由執行預沉積處理引起的表面之任何污染。此外，本文中所描述之方法可用於以相對具成本效益且簡單之方式選擇性地沉積氮化矽。
在本揭示中，氣體可包括在常溫及常壓（NTP）下為氣體、汽化固體及/或汽化液體之材料，且可取決於上下文而由單一氣體或氣體之混合物構成。除了製程氣體之外的氣體（亦即，未穿行通過氣體分配總成、多埠口注入系統、其他氣體分配裝置、或類似者所引入的氣體）可用於例如密封反應空間，並可包括一密封氣體，諸如一鈍氣。在一些情況下，術語前驅物可指參與產生另一化合物之化學反應的化合物，且特定言之，係指構成膜基質或膜之主要構架的化合物。在某些情況下，用語「反應物」可與用語「前驅物」互換地使用。用語「惰性氣體」可指不參與化學反應及/或在相當程度上不變成薄膜基質之一部分的氣體。例示性惰性氣體包括He、Ar、H 2、N 2（例如，在不由電漿活化時）及其任何組合。
如本文所使用，用語基材(substrate)可指可用以形成或在其上可形成裝置、電路、或膜之任何（多個）下伏材料。基材可包括塊材（諸如矽（例如，單晶矽））且可包括覆於塊材之一或多個層。此外，基板可包括各種表面形態，諸如形成於基板層之至少一部分之內或之上的凹部、線條等等。藉助於實例，基板可包括包含第一材料及第二材料之表面，如下文更詳細地描述。
如本文所使用，術語膜及/或層可指任何連續或非連續結構及材料，諸如藉由本文所揭示之方法沉積的材料。例如，膜及/或層可包括二維材料、三維材料、奈米粒子，或甚至是部分或全分子層、或部分或全原子層、或原子及/或分子團簇。一膜或層可包含具有針孔的材料或層，其可係至少部分連續的。替代地，一膜或層可完全由隔離島狀物所組成。
如本文所用，術語循環沉積可指包括將前驅物及/或反應物依序引入至反應室中及/或依序進行電漿功率脈衝以在基板上方沉積層的製程。循環沉積製程包括處理技術，諸如原子層沉積（ALD）、循環化學氣相沉積（CCVD）及電漿增強型ALD及CCVD。
如本文中所使用，ALD可指氣相沉積製程，其中通常為複數個連續沉積循環之沉積循環在製程室中進行。通常，在各循環期間，前驅體係化學吸附至沉積表面（例如，可包括來自先前ALD循環之先前經沉積材料或其他材料的基板表面），形成不易與額外前驅體起反應（亦即，自限式反應）的關於單層或次單層之材料。其後，在一些情況下，可隨後將反應物（例如，另一前驅體或反應氣體）引入至製程室中，以用於在沉積表面上將經化學吸附之前驅體轉化為所欲材料。反應物能夠進一步與前驅體起反應。進一步地，亦可在各循環期間利用吹掃步驟以從製程室移除過量前驅體及/或在轉化經化學吸附之前驅體之後從製程室移除過量反應物及/或反應副產物。在至少一些情況下，沖洗氣體可包括未由電漿或類似構件活化之反應物。
如本文中所使用，術語循環化學氣相沉積可指將基板依序暴露於兩種或更多種揮發性前驅物/反應物之任何製程，兩種或更多種揮發性前驅物/反應物在基板上反應及/或分解以產生所要沉積。
包括氮化矽(SiN)的層可包含氮化矽材料、基本上由氮化矽材料組成、或由氮化矽材料組成。由氮化矽組成的膜可包括可接受量的雜質（諸如碳、氯或其他鹵素、及/或氫），其可源自於用以沉積氮化矽層的一或多種前驅體。如本文所用，SiN或氮化矽係指包括矽及氮的化合物。SiN可表示為SiN x，其中x從例如約0.5變化至約2.0，其中形成一些Si-N鍵結。在一些情況下，x可從約0.9變化至約1.7、從約1.0變化至約1.5、或從約1.2變化至約1.4。在一些實施例中，形成氮化矽，其中Si具有+IV氧化態且材料中之氮化物的量可變化。
如本文中所使用，結構可包括如本文中所描述之基板。結構可包括上覆於基材之一或多個層（諸如，根據本文中所描述之方法所形成的一或多個層）。
進一步言，在本揭露中，變量之任兩個數字可構成變量之可工作範圍，且所指出之任何範圍可包括或排除端點。額外地，所指示的變量之任何數值（不管其是否以「約」來指示）可指精確值或近似值並包括等效值，且可指平均值、中間值、代表值、多數值或類似者。進一步地，在本揭露中，於一些實施例中，用語包括(including)、由…構成(constituted by)、及具有(having)可獨立地指一般或廣泛地包含(typically or broadly comprising)、包含(comprising)、基本上由…所組成(consisting essentially of)、或由…所組成(consisting of)。應理解，當組成、方法、裝置等稱為包含某些特徵時，其意謂其包括彼等特徵，且其未必排除其他特徵之存在，只要特徵不使申請專利範圍無法工作即可。儘管如此，術語包含或包括包括由……組成之含義，亦即當所討論之組成、方法、裝置等僅包括所列出之特徵、組件及/或步驟且不含有任何其他特徵、組件、步驟及其類似者，且包括基本上由……組成。
在本揭露中，於一些實施例中，任何已定義之意義不必然排除尋常及慣例意義。
現轉向圖式，圖1繪示根據本揭示之至少一個實施例的用於相對於基板表面上之第二材料在基板表面之第一材料上選擇性地沉積氮化矽的方法100。
如本文中所描述之選擇性沉積製程可包括相對於基板表面上之第二材料在第一材料上沉積較大量之材料。舉例而言，選擇性製程可使得相對於形成於第二材料上之氮化矽，形成於第一材料上之氮化矽的量更大。在本揭示之一些實施例中，製程之選擇性可表述為沉積於第一材料上之材料（例如，層厚度）相對於形成於組合之第一及第二材料上之材料的量（例如，層厚度）之比率。舉例而言，若10 nm之氮化矽沉積於第一材料上，且1 nm之氮化矽沉積於第二材料上，則選擇性沉積製程將被視為具有91%之選擇性。在一些實施例中，本文中所揭示之方法的選擇性大於50%、大於75%、大於80%、大於90%、大於95%、大於99.5%、大於98%、大於99%或甚至為約100%。
方法100包括以下步驟：在反應室內提供基板，基板包含包含第一材料及第二材料之表面（步驟102）；執行一或多個沉積循環（步驟104）；及執行處理製程（步驟108）。如下文更詳細地描述，方法100亦可包括過渡時段（步驟106）。
在步驟102期間，提供基板到反應器之反應腔室中。根據本揭示之實例，反應室可形成ALD反應器，諸如電漿增強型ALD（PEALD）反應器之一部分。方法100的各個步驟可於單個反應腔室內執行或可於多個反應器腔室，諸如群集工具的反應腔式中執行。視情況，包括反應腔室的反應器可設有加熱器，以經由升高基板及/或反應物/前驅體中之一或多者的溫度來啟動反應。下文結合圖5更詳細地描述適合於與方法100一起使用之例示性反應器。
在步驟102期間，可使基板達到步驟104所需的溫度及壓力。藉助於實例，反應室內之（例如，基板或基板支撐件之）溫度可在約100℃與約600℃或約300℃與約550℃之間。反應室內之壓力可為約0.5至約50或約1至約30托。
如前所指，於步驟102期間提供之基板包括包含第一材料及第二材料之表面。第一材料可包括例如矽或氮化物，諸如氮化矽。第二材料可包括氧化物，諸如金屬氧化物或氧化矽，或金屬。
在步驟104期間，執行一或多個沉積循環。如所繪示，各沉積循環可包括：在前驅物脈衝時段將矽前驅物脈衝或提供至反應室（步驟110）；將反應物氣體提供至反應室（步驟112）；及在沉積電漿時段提供沉積電漿功率以自反應物氣體形成活化物質（步驟114）。
在步驟110期間，將矽前驅物脈衝至反應室。適用於與步驟110一起使用之例示性矽前驅物包括優先與基板表面上之OH端基反應之矽前驅物。此矽前驅物包括矽烷、矽烷胺及胺基矽烷。特定實例包括矽烷（SiH 4）、二矽烷（Si 2H 6）、三矽烷（Si 3H 8）、四矽烷（Si 4H 10）、N(Si 2H 5) 3、三矽烷胺N(SiH 3) 3、N(SiMe 3)(SiHMeNMe 2) 2、2,2-二矽基三矽烷（Si(SiH3) 4）、三二甲基胺基矽烷（SiH(NMe 2) 3）、雙(二乙基胺基)矽烷（SiH 2(NEt 2) 2）（BEDAS）、雙（第三丁基胺基）矽烷（SiH 2(NHtBu) 2）（BTBAS）、二-異丙基胺基）矽烷（SiH3(NiPr 2)）（DIPAS），其中Me表示甲基，Et表示乙基，tBu表示第三丁基且iPr表示異丙基。替代地，一些前驅物可較佳地與包含-NH端鍵的活化位點反應。與活化位點反應之例示性前驅物包括鹵化矽化合物，諸如包含Cl及I中之一或多者的矽化合物。特定實例包括三氯二矽烷（Si 2Cl 3H 3）、五氯二矽烷（Si 2Cl 5H）、六氯二矽烷（Si 2Cl 6）、八氯三矽烷（Si 3Cl 8）、去氯矽烷（SiCl 2H 2）、二甲基二氯矽烷（SiCl 2Me 2）、四氯矽烷（SiCl 4）、四碘矽烷（SiI 4）、三碘矽烷（SiI 3H）及去碘矽烷（SiI 2H 2）。
在步驟110期間，矽前驅物與載體氣體至反應室之流率可為約200至約10000或約2000至約4000 sccm。矽前驅物脈衝之持續時間可在約0.01秒與約30秒之間或在約0.1秒與約2秒之間，例如約0.3秒。
在步驟112期間，將反應物氣體提供至反應室。例示性反應物氣體包括反應物及處理氣體。例示性反應物包括呈任何組合之氮氣（N 2）、氫氣（H 2）、氬氣（Ar）或氦氣（He）中之一或多者。例示性處理氣體包括呈任何組合之氫氣（H 2）、氮氣（N 2）、氬氣（Ar）或氦氣（He）中之一或多者。根據本揭示之實施例，處理氣體不包含反應物。在一些情況下，反應物氣體及處理氣體包含含氫氣體，諸如H 2。
步驟112期間反應物至反應室之流率可為約1000至約50000或約10000至約30000 sccm。反應物脈衝之持續時間可在約1秒與約30秒之間或在約2秒與約10秒之間。步驟112期間處理氣體至反應室之流率可為約2至約2000或約5至約1000 sccm。經由一或多個沉積循環及/或經由一或多個沉積及處理循環，處理氣體流動至反應室之持續時間可為連續的。
在步驟114期間，在沉積電漿時段提供沉積電漿功率以自反應物氣體形成活化物質。沉積電漿功率可具有在約100kHz與約60MHz之間或在約12MHz與約14MHz之間的頻率。沉積電漿功率對於300mm直徑之基板可具有在約10與約2000 W之間或在約100與約900 W之間或為約700W之功率，或對於不同橫截面尺寸之基板具有類似功率密度。步驟114之持續時間可在約0.05秒與約60秒之間或在約0.5秒與約30秒之間。
在步驟106（過渡時段）（亦即，步驟104之一或多個沉積循環之後及步驟108之處理製程之前的時段）期間，可調節一或多個氣體流率及/或反應室壓力以用於後續步驟108。舉例而言，反應物之流動可在步驟106（過渡時段）期間停止。另外或替代地，步驟106（過渡時段）期間反應室內之壓力可降低。又進一步另外或替代地，處理氣體至反應室之流率可在步驟106期間（例如，在過渡時段期間）增加。
在步驟108期間，執行處理製程。在所繪示之實施例中，步驟108包括將處理氣體提供至反應室（步驟116），及在處理電漿時段提供處理電漿功率以自處理氣體形成活化物質（步驟118）。
步驟108期間反應室內（例如，反應室內之晶座）之溫度可如上文結合步驟102所指出。步驟108期間反應室內之壓力可在約1托與約30托之間或在約2.6托與約15托之間。
根據本揭示之實例，步驟104（執行一或多個沉積循環）期間反應室內之壓力大於步驟108（執行處理製程）期間反應室內之壓力。舉例而言，執行一或多個沉積循環期間反應室內之壓力可比執行處理製程期間反應室內之壓力大至少2.5倍或10倍。
步驟116期間所使用之處理氣體可如上文關於步驟104及106所指出。處理氣體在步驟108（執行處理製程）期間之流率可大於處理氣體在執行一或多個沉積循環之步驟期間的流率。舉例而言，處理氣體在執行處理製程期間之流率可比處理氣體在執行一或多個沉積循環之步驟期間的流率大10倍或大200倍。藉助於特定實例，步驟108期間處理氣體至反應室之流率可在約0.1與約2 slm之間或在約0.5與約1 slm之間。
在步驟118期間，在處理電漿時段提供處理電漿功率以自處理氣體形成活化物質。處理電漿功率可具有在約100kHz與約60MHz之間或在約12MHz與約14MHz之間的頻率。處理電漿功率對於300 mm直徑之基板可具有在約10與約2000 W之間或在約100 與約900 W之間或為約600 W的功率，或對於不同橫截面尺寸之基板具有類似功率密度。步驟118之持續時間可在約0.05秒與約300秒之間或在約0.5秒與約60秒之間。根據本揭示之實例，在步驟114期間提供之沉積電漿功率大於在步驟118期間提供之處理電漿功率。根據其他實例，沉積電漿時段之持續時間小於處理電漿時段之持續時間。舉例而言，沉積電漿時段可比處理電漿時段之持續時間小50%、小25%、小20%或小16%。
如圖1中所繪示，步驟104至108可重複多次以相對於第二材料在第一材料上選擇性地沉積氮化矽。此外，如上文所指出，步驟104可在前進至步驟106或108之前重複多次。
圖2係繪示適於與方法100一起使用的一時間序列200。時序包括沉積時段202、過渡時段204及處理時段206。
沉積時段202可與上文所描述之步驟104相同或類似。在所繪示之實施例中，沉積時段202包括饋送時段208、沖洗時段210、沉積電漿時段212及流量改變時段220。
在饋送時段208期間，在前驅物脈衝時段214將矽前驅物提供至反應室，提供反應物（例如，在反應物時段216之一部分內），且將處理氣體提供至反應室。矽前驅物、反應物及處理氣體以及各別流率可如上文結合步驟104所指出。
在饋送時段208之後，可在沖洗時段210期間沖洗反應室。沖洗可藉由使反應物及處理氣體（統稱為反應物氣體）連續流動來實現。時段208之持續時間可為約0.05秒至約120秒或約0.5秒至約10秒。
在沉積電漿時段212期間，儘管反應物及處理氣體連續流動至反應室，但在沉積電漿時段提供沉積電漿功率以自反應物氣體形成活化物質，如上文結合步驟114所描述。
在流量改變時段220期間，反應物及處理氣體可連續流動至反應室。流量改變時段220可用於在沉積電漿時段212之後沖洗反應室。在n個沉積循環結束時（其中n可在例如約1至約10之範圍內），反應物之流動可在流量改變時段220結束時停止或顯著減少（例如，減少90%或更多）。處理氣體之流率可保持與處理氣體在沉積時段202期間之流率實質上相同（例如，在± 10%內）。
過渡時段204可包括氣體改變時段222。過渡時段204可與上文所描述之過渡時段106相同或類似。
在氣體改變時段222期間，反應物之流率已減少或已停止，且處理氣體之流率增加（展示為線219），使得處理氣體之流率在氣體改變時段222結束時或附近大於處理氣體在沉積時段202期間及/或在流量改變時段220期間之流率。舉例而言，處理氣體在氣體改變時段222期間之流率可線性地增加，如所繪示。處理氣體之流率可增加至，例如大於處理氣體在執行一或多個沉積循環或時段220之步驟期間之流率的10倍。此外，如圖2中所繪示，氣體改變時段222期間之壓力可在反應室內降低至例如上文結合步驟108所提及之壓力。
處理時段224可與上文所描述之步驟108相同或類似。如所繪示，處理步驟可包括提供處理氣體（其用線段221進行說明），及提供處理電漿功率（例如，在處理電漿時段223）以自處理氣體形成活化物質以藉此處理（例如，選擇性地沉積）氮化矽。
圖3示意說明根據本發明的示例性實施例的結構300。結構300包括基板302、第一材料304及第二材料306。如所繪示，第一材料304及第二材料306形成於基板302之表面上。
基板302可包括任何合適之材料，諸如半導體材料及通常用於形成半導體裝置之材料。藉助於實例，基板302可為或包括矽、其他第IV族半導體材料、第III-V族半導體及/或第II-VI族半導體。
第一材料304可包括上文指出之第一材料中之任一者。舉例而言，第一材料304可包括含矽材料，諸如矽或氮化矽。類似地，第二材料306可包括本文中所指出之第二材料中之任一者。藉助於實例，第二材料306可包括金屬或氧化物，諸如元素金屬或合金、金屬氧化物（例如HfO 2、ZrO 2或其類似者）或氧化矽（其可包括碳及/或氮）。
圖4繪示結構400，其中已使用如本文中所描述之方法相對於沉積於第二材料306上方（例如，與其直接接觸）之氮化矽404在第一材料304上方選擇性地沉積（例如，與其直接接觸）氮化矽402。在所繪示之實施例中，選擇性不為100%，而實際上可形成覆蓋在第二材料306上面之一定量的氮化矽404。在其他情況下，選擇性可為100%或如上文所描述。
現轉至圖5，繪示根據本發明之例示性實施例之反應器系統500。反應器系統500可用於執行如本文中所描述（例如，方法100）之一或多個步驟或子步驟及/或形成如本文中所描述之一或多個結構或其部分。
反應器系統500包括通常在反應室502之內部501（反應區）中平行且面向彼此之一對導電平板電極514、518。儘管以一個反應室502來繪示，但反應器系統500可包括兩個或更多個反應室。可藉由將例如RF功率自電漿功率源508施加至一個電極（例如，電極518）且使另一電極（例如，電極514）電接地而在內部501內激發電漿。溫度調節器503（例如，用以提供加熱及/或冷卻）可設置於下部載物台514（下部電極）中，且置放於其上之基板522的溫度可保持在所需溫度，諸如上文所指出之溫度。電極518可充當氣體分配裝置，諸如噴灑板或噴灑頭。可使用一或多個氣體管線（例如，分別耦接至（例如，處理或反應物源）507及（例如，矽前驅物）源505之氣體管線504及氣體管線506）將前驅物氣體、反應物氣體、處理氣體及運載或惰性氣體（若存在）或其類似者引入至反應室502中。舉例而言，可使用管線504將惰性氣體及反應物（例如，如上文所描述）引入至反應室502中，及/或可使用管線506將矽前驅物及載體氣體（例如，如上文所描述）引入至反應室中。儘管以兩個進氣管線504、506進行繪示，但反應器系統500可包括任何合適數目的氣體管線。
在反應室502中，可提供具有排氣管線521之圓形管道520，反應室502之內部501中的氣體可經由圓形管道排放至排氣源510。另外，轉移室523可具備密封氣體管線529以經由轉移室523之內部（轉移區域）將密封氣體引入至反應室502之內部501中，其中可提供用於分隔反應區域及轉移室523之分隔板526（自此圖省略將基板轉移至轉移室523中或自轉移室轉移基板所通過的閘閥）。轉移室523亦可具備耦接至排氣源510之排氣管線527。在一些實施例中，可使用流通系統（FPS）實現載體氣體至反應室502之連續流動。
反應器系統500可包括一或多個控制器512，其經程式化或以其他方式經組態以使得進行如本文中所描述之一或多個方法步驟。如熟習此項技術者將瞭解，（多個）控制器512與反應器之各種電源、加熱系統、泵、機器人系統及氣體流量控制器或閥耦接。藉助於實例，控制器512可經組態以控制矽前驅物、反應物、處理氣體及/或惰性氣體至一或多個反應室中之至少一者中的氣體流動，以選擇性地沉積如本文中所描述之氮化矽。控制器512可進一步經組態以提供功率以例如在反應室502內形成電漿。控制器512可類似地經組態以執行如本文中所描述之額外步驟。
控制器512可包括電子電路系統及軟體，以選擇性地操作閥、歧管、加熱器、泵及包括於系統500中之其他組件。此等電路系統及組件進行操作以自各別源引入前驅物、反應物、處理氣體及沖洗氣體。控制器512可控制氣體脈衝序列之時序、基板及/或反應室之溫度、反應室內之壓力、電漿功率及各種其他操作以提供系統500之適當操作，諸如在執行方法100及/或序列200時。
控制器512可包括控制軟體以以電氣方式或以氣動方式控制閥，從而控制前驅物、反應物及/或沖洗氣體流入反應室502中及流出反應室。控制器512可包括執行某些任務之模組，諸如軟體或硬體組件，例如FPGA或ASIC。模組可有利地經構型以常駐在控制系統的可定址儲存媒體，及經構型以執行一或多個製程。
在一些實施例中，可使用雙室反應器（用於處理基板且彼此緊密裝設的兩個區段或隔室），其中反應物氣體及稀有氣體可透過共用管線來供應，而前驅物氣體透過非共用管線供應。
在系統500之操作期間，將諸如半導體晶圓之基板自例如基板處置區域523轉移至內部501。一旦基板轉移至內部501，一或多種氣體（諸如前驅物、反應物、處理氣體、載體氣體及/或沖洗氣體）便引入至反應室502中。
上文所描述的本揭露的實例實施例並未限制本發明的範疇，由於此等實施例僅是本發明之實施例的實例，本發明範疇係由文後之申請專利範圍及其法律上等效物所定義。任何等效實施例係意欲落入本發明之範疇內。事實上，除本文中所示及所描述者以外，所屬技術領域中具有通常知識者可由實施方式輕易明白本發明之各種修改，諸如所描述元件之替代有用組合。此類修改及實施例亦意欲落入文後之申請專利範圍的範疇內。
100:方法 102:步驟 104:步驟 106:步驟 108:步驟 110:步驟 112:步驟 114:步驟 116:步驟 118:步驟 200:時序 202:沉積時段 204:過渡時段 206:處理時段 208:饋送時段 210:沖洗時段 212:沉積電漿時段 214:前驅物脈衝時段 216:反應物時段 219:線 220:流量改變時段 221:線段 222:氣體改變時段 223:處理電漿時段 224:處理時段 300:結構 302:基板 304:第一材料 306:第二材料 400:結構 402:氮化矽 404:氮化矽 500:反應器系統 501:內部 502:反應室 503:溫度調節器 504:氣體管線 505:矽前驅物源 506:氣體管線 507:處理或反應物源 508:電漿功率源 510:排氣源 512:控制器 514:電極 518:電極 520:圓形管道 521:排氣管線 522:基板 523:轉移室 526:分隔板 527:排氣管線 529:密封氣體管線
當結合下列闡釋性圖式考慮時，可藉由參照實施方式及申請專利範圍而衍生對本揭露之例示性實施例的更完整瞭解。 圖1繪示根據本揭示之至少一個實施例的用於選擇性地沉積氮化矽之方法。 圖2繪示依據本發明之至少一實施例的一時序圖。 圖3及圖4繪示根據本揭示之實例的結構。 圖5繪示根據本揭示之實例的系統。 將理解，圖式中之元件係為了簡明及清楚起見而繪示，且不一定按比例繪製。舉例來說，圖式中之一些元件的尺寸可能相對於其他元件特別放大，以幫助改善對所繪示之本發明之實施例的理解。
100:方法
102:步驟
104:步驟
106:步驟
108:步驟
110:步驟
112:步驟
114:步驟
116:步驟
118:步驟

Claims (21)

  1. 一種用於選擇性沉積氮化矽之方法，該方法包含： 在一反應器之一反應室內提供一基板，該基板包含一表面，該表面包含一第一材料及一第二材料； 執行一或多個沉積循環，其中各沉積循環包含： 在一前驅物脈衝時段將一矽前驅物脈衝至該反應室； 將一反應物氣體提供至該反應室；及 在一沉積電漿時段提供一沉積電漿功率以自該反應物氣體形成活化物質；及 執行一處理製程，其包含： 將一處理氣體提供至該反應室；及 在一處理電漿時段提供一處理電漿功率以自該處理氣體形成活化物質， 其中該反應物氣體包含一反應物及該處理氣體，且 其中該氮化矽相對於該第一材料選擇性地沉積於該第二材料上。
  2. 如請求項1所述之方法，其中該第一材料包含氮化矽或矽。
  3. 如請求項1項或請求項2所述之方法，其中該第二材料包含一金屬氧化物、氧化矽或一金屬。
  4. 如請求項1至請求項3中任一所述之方法，其中該反應物包含氮氣（N 2）、氫氣（H 2）、氬氣（Ar）、氦氣（He）中之一或多者。
  5. 如請求項1項至請求項4中任一所述之方法，其中該處理氣體包含氫氣（H 2）、氮氣（N 2）、氬氣（Ar）、氦氣（He）中之一或多者。
  6. 如請求項1項至請求項5中任一所述之方法，其中該矽前驅物包含一矽烷、一矽烷胺、一胺基矽烷及一鹵化矽化合物中之一或多者。
  7. 如請求項1項至請求項6中任一所述之方法，其中該沉積電漿功率大於該處理電漿功率。
  8. 如請求項1項至請求項7中任一所述之方法，其中執行一或多個沉積循環期間該反應室內之一壓力大於執行該處理製程期間該反應室內之一壓力。
  9. 如請求項8所述之方法，其中執行一或多個沉積循環期間該反應室內之該壓力比執行該處理製程期間該反應室內之該壓力大至少2.5倍。
  10. 如請求項1項至請求項9中任一所述之方法，其中該處理氣體不包含該反應物。
  11. 如請求項1項至請求項10中任一所述之方法，其中該處理氣體在執行該處理製程期間之一流率大於該處理氣體在執行一或多個沉積循環之步驟期間之一流率。
  12. 如請求項11所述之方法，其中該處理氣體在執行該處理製程期間之該流率比該處理氣體在執行一或多個沉積循環之該步驟期間之該流率大10倍。
  13. 如請求項1項至請求項12中任一所述之方法，其包含在執行該處理製程之前重複該一或多個沉積循環。
  14. 如請求項1項至請求項13中任一所述之方法，其中該沉積電漿時段之一持續時間小於該處理電漿時段之一持續時間。
  15. 如請求項1項至請求項14中任一所述之方法，其中該處理氣體在複數個沉積循環期間連續流動至該反應室。
  16. 如請求項1項至請求項15中任一所述之方法，其中該處理氣體在該一或多個沉積循環及該處理製程循環期間連續流動至該反應室。
  17. 如請求項1項至請求項16中任一所述之方法，其中該方法包含在該一或多個沉積循環之後且在該處理製程之前的一過渡時段。
  18. 如請求項17所述之方法，其中該反應室內之一壓力在該過渡時段期間降低。
  19. 如請求項17項或請求項18所述之方法，其中該處理氣體至該反應室之一流率在該過渡時段期間增加。
  20. 一種結構，其包含： 一基板，其包含一表面，該表面包含一第一材料及一第二材料；及 一氮化矽層，其相對於該第二材料選擇性地形成於該第一材料上。
  21. 一種系統，其包含： 一反應器，其包含一反應室；及 一控制器，其經組態以執行如請求項1至19中任一項之方法。
TW112124823A 2022-07-11 2023-07-04 選擇性沉積氮化矽之方法與包括經組態以執行此方法的控制器的系統及包括經選擇性沉積之氮化矽層的結構 TW202419670A (zh)

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