CN1979877B - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

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Publication number
CN1979877B
CN1979877B CN2006100959019A CN200610095901A CN1979877B CN 1979877 B CN1979877 B CN 1979877B CN 2006100959019 A CN2006100959019 A CN 2006100959019A CN 200610095901 A CN200610095901 A CN 200610095901A CN 1979877 B CN1979877 B CN 1979877B
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overlapping
electrode
film
region
portion parallel
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Expired - Fee Related
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CN2006100959019A
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Chinese (zh)
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CN1979877A (zh
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柴田宽
矶部敦生
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Geometry (AREA)
  • Power Engineering (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Projection Apparatus (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Transforming Electric Information Into Light Information (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN2006100959019A 1999-08-31 2000-08-30 半导体器件及其制造方法 Expired - Fee Related CN1979877B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP24679899 1999-08-31
JP246798/99 1999-08-31

Related Parent Applications (2)

Application Number Title Priority Date Filing Date
CNB001263196A Division CN100355013C (zh) 1999-08-31 2000-08-30 半导体器件及其制造方法
CNB2005100673892A Division CN100492640C (zh) 1999-08-31 2000-08-30 半导体器件

Publications (2)

Publication Number Publication Date
CN1979877A CN1979877A (zh) 2007-06-13
CN1979877B true CN1979877B (zh) 2011-07-27

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Family Applications (4)

Application Number Title Priority Date Filing Date
CN2006100959019A Expired - Fee Related CN1979877B (zh) 1999-08-31 2000-08-30 半导体器件及其制造方法
CN2007101822889A Expired - Fee Related CN101150135B (zh) 1999-08-31 2000-08-30 半导体器件及其制造方法
CNB2005100673892A Expired - Fee Related CN100492640C (zh) 1999-08-31 2000-08-30 半导体器件
CNB001263196A Expired - Lifetime CN100355013C (zh) 1999-08-31 2000-08-30 半导体器件及其制造方法

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CN2007101822889A Expired - Fee Related CN101150135B (zh) 1999-08-31 2000-08-30 半导体器件及其制造方法
CNB2005100673892A Expired - Fee Related CN100492640C (zh) 1999-08-31 2000-08-30 半导体器件
CNB001263196A Expired - Lifetime CN100355013C (zh) 1999-08-31 2000-08-30 半导体器件及其制造方法

Country Status (6)

Country Link
US (9) US6583472B1 (enExample)
EP (3) EP1081676A1 (enExample)
JP (12) JP2001144301A (enExample)
KR (2) KR100788870B1 (enExample)
CN (4) CN1979877B (enExample)
TW (1) TW478014B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3784491B2 (ja) 1997-03-28 2006-06-14 株式会社半導体エネルギー研究所 アクティブマトリクス型の表示装置
TW478014B (en) 1999-08-31 2002-03-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing thereof
JP4700156B2 (ja) * 1999-09-27 2011-06-15 株式会社半導体エネルギー研究所 半導体装置
US6825488B2 (en) * 2000-01-26 2004-11-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US6646692B2 (en) * 2000-01-26 2003-11-11 Semiconductor Energy Laboratory Co., Ltd. Liquid-crystal display device and method of fabricating the same
TW513753B (en) 2000-03-27 2002-12-11 Semiconductor Energy Lab Semiconductor display device and manufacturing method thereof
US6580475B2 (en) 2000-04-27 2003-06-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US6583576B2 (en) * 2000-05-08 2003-06-24 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, and electric device using the same
US7804552B2 (en) * 2000-05-12 2010-09-28 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device with light shielding portion comprising laminated colored layers, electrical equipment having the same, portable telephone having the same
TW504846B (en) 2000-06-28 2002-10-01 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP3918412B2 (ja) * 2000-08-10 2007-05-23 ソニー株式会社 薄膜半導体装置及び液晶表示装置とこれらの製造方法
US6509616B2 (en) 2000-09-29 2003-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
JP2002299632A (ja) * 2001-03-30 2002-10-11 Sanyo Electric Co Ltd 半導体装置及びアクティブマトリクス型表示装置
US6642986B2 (en) * 2001-04-13 2003-11-04 Koninklijke Philips Electronics N.V. Liquid crystal display device having uniform integrated spacers
JP4831885B2 (ja) 2001-04-27 2011-12-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6906344B2 (en) * 2001-05-24 2005-06-14 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with plural channels and corresponding plural overlapping electrodes
JP2003229578A (ja) * 2001-06-01 2003-08-15 Semiconductor Energy Lab Co Ltd 半導体装置、表示装置およびその作製方法
US6897477B2 (en) 2001-06-01 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and display device
JP2003045874A (ja) 2001-07-27 2003-02-14 Semiconductor Energy Lab Co Ltd 金属配線およびその作製方法、並びに金属配線基板およびその作製方法
JP5046445B2 (ja) * 2001-07-31 2012-10-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2003177682A (ja) * 2001-09-05 2003-06-27 Konica Corp ディスプレイパネルおよびその製造方法
US7209192B2 (en) 2001-09-26 2007-04-24 Samsung Electronics Co., Ltd. Thin film transistor array panel for liquid crystal display and method for manufacturing the same
KR100840318B1 (ko) 2001-12-10 2008-06-20 삼성전자주식회사 박막 트랜지스터 기판 및 그의 제조 방법과 액정 표시 장치
KR100635042B1 (ko) * 2001-12-14 2006-10-17 삼성에스디아이 주식회사 전면전극을 구비한 평판표시장치 및 그의 제조방법
KR100484591B1 (ko) * 2001-12-29 2005-04-20 엘지.필립스 엘시디 주식회사 능동행렬 유기전기발광소자 및 그의 제조 방법
TW594336B (en) * 2002-01-30 2004-06-21 Sanyo Electric Co Semiconductor display device, method for making the same, and active matrix type display device
TWI244571B (en) * 2002-01-30 2005-12-01 Sanyo Electric Co Semiconductor display device
JP4216092B2 (ja) * 2002-03-08 2009-01-28 株式会社半導体エネルギー研究所 液晶表示装置
JP3925555B2 (ja) * 2002-04-25 2007-06-06 セイコーエプソン株式会社 電気光学装置及び電子機器
JP2004004722A (ja) * 2002-04-25 2004-01-08 Seiko Epson Corp 電気光学装置及び電子機器
US7256421B2 (en) 2002-05-17 2007-08-14 Semiconductor Energy Laboratory, Co., Ltd. Display device having a structure for preventing the deterioration of a light emitting device
JP4214741B2 (ja) * 2002-08-27 2009-01-28 セイコーエプソン株式会社 電気光学装置及び電子機器
JP3850364B2 (ja) 2002-10-25 2006-11-29 株式会社ミツトヨ 変位測定器の測定子駆動機構
JP3767590B2 (ja) * 2002-11-26 2006-04-19 セイコーエプソン株式会社 電気光学装置及びその製造方法並びに電子機器
JP3925549B2 (ja) * 2002-11-26 2007-06-06 セイコーエプソン株式会社 電気光学装置及び電子機器
JP4168836B2 (ja) 2003-06-03 2008-10-22 ソニー株式会社 表示装置
CN1307479C (zh) * 2003-07-10 2007-03-28 友达光电股份有限公司 电容器装置
JP2005045017A (ja) * 2003-07-22 2005-02-17 Sharp Corp アクティブマトリクス基板およびそれを備えた表示装置
JP4069906B2 (ja) * 2003-08-04 2008-04-02 セイコーエプソン株式会社 電気光学装置及びその製造方法並びに電子機器
JP2005084104A (ja) * 2003-09-04 2005-03-31 Seiko Epson Corp 半導体装置及び電気光学装置
JP4529450B2 (ja) * 2004-01-19 2010-08-25 セイコーエプソン株式会社 電気光学装置及び電子機器
JP4450834B2 (ja) * 2004-08-24 2010-04-14 シャープ株式会社 アクティブマトリクス基板およびそれを備えた表示装置
JP2006098641A (ja) * 2004-09-29 2006-04-13 Seiko Epson Corp 薄膜半導体装置、電気光学装置、および電子機器
JP4063266B2 (ja) * 2004-09-30 2008-03-19 セイコーエプソン株式会社 薄膜半導体装置の製造方法、薄膜半導体装置、電気光学装置、および電子機器
US7379718B2 (en) * 2004-12-20 2008-05-27 Marvell World Trade Ltd. Method and apparatus to manage power consumption of a semiconductor device
JP4349375B2 (ja) * 2005-04-11 2009-10-21 セイコーエプソン株式会社 電気光学装置及び電子機器
EP1958019B1 (en) 2005-12-05 2017-04-12 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
EP1832915B1 (en) 2006-01-31 2012-04-18 Semiconductor Energy Laboratory Co., Ltd. Display device with improved contrast
JP5222477B2 (ja) * 2006-01-31 2013-06-26 株式会社半導体エネルギー研究所 表示装置
JP5178018B2 (ja) * 2006-01-31 2013-04-10 株式会社半導体エネルギー研究所 表示装置
JP2007233361A (ja) * 2006-02-02 2007-09-13 Semiconductor Energy Lab Co Ltd 表示装置
EP1816508A1 (en) 2006-02-02 2007-08-08 Semiconductor Energy Laboratory Co., Ltd. Display device
EP1826605A1 (en) 2006-02-24 2007-08-29 Semiconductor Energy Laboratory Co., Ltd. Display device
JP5346441B2 (ja) * 2006-02-24 2013-11-20 株式会社半導体エネルギー研究所 液晶表示装置
US20090207329A1 (en) * 2006-03-24 2009-08-20 Sharp Kabushiki Kaisha Liquid crystal display
EP2924498A1 (en) 2006-04-06 2015-09-30 Semiconductor Energy Laboratory Co, Ltd. Liquid crystal desplay device, semiconductor device, and electronic appliance
JP5028906B2 (ja) * 2006-08-11 2012-09-19 セイコーエプソン株式会社 電気光学装置用基板及び電気光学装置、並びに電子機器
US7952100B2 (en) 2006-09-22 2011-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7507998B2 (en) * 2006-09-29 2009-03-24 Tpo Displays Corp. System for displaying images and method for fabricating the same
US8021518B2 (en) * 2006-11-30 2011-09-20 Nalco Company Method of applying a super-absorbent composition to tissue or towel substrates
JP5280671B2 (ja) * 2006-12-20 2013-09-04 富士フイルム株式会社 画像検出器および放射線検出システム
JP4007412B2 (ja) * 2007-01-12 2007-11-14 ソニー株式会社 薄膜半導体装置及び液晶表示装置とこれらの製造方法
KR101366162B1 (ko) * 2007-03-20 2014-02-25 삼성디스플레이 주식회사 유기 발광 표시 패널 및 이의 제조방법
JP4730407B2 (ja) * 2008-07-17 2011-07-20 セイコーエプソン株式会社 電気光学装置及び電子機器
JP2010134395A (ja) * 2008-11-06 2010-06-17 Seiko Epson Corp 電気光学装置及び電子機器
TWI401494B (zh) 2009-03-06 2013-07-11 Hannstar Display Corp 接地結構
CN101840899B (zh) * 2009-03-19 2012-05-02 瀚宇彩晶股份有限公司 接地结构
TWI617029B (zh) * 2009-03-27 2018-03-01 半導體能源研究所股份有限公司 半導體裝置
KR101073174B1 (ko) * 2009-07-31 2011-10-12 삼성모바일디스플레이주식회사 화소 및 이를 구비한 유기전계발광 표시장치
JP4530105B2 (ja) * 2009-10-13 2010-08-25 セイコーエプソン株式会社 電気光学装置及び電子機器
JP5874804B2 (ja) * 2010-02-15 2016-03-02 Ｎｌｔテクノロジー株式会社 薄膜トランジスタ、その製造方法、及び表示装置並びに電子機器
CN202404339U (zh) * 2012-01-12 2012-08-29 京东方科技集团股份有限公司 阵列基板及包括该阵列基板的显示装置
KR101335527B1 (ko) * 2012-02-23 2013-12-02 엘지디스플레이 주식회사 유기전계발광표시장치 및 그 제조 방법
JP2013222124A (ja) * 2012-04-18 2013-10-28 Sony Corp 信号伝達装置、表示装置および電子機器
JP5386626B2 (ja) * 2012-11-06 2014-01-15 株式会社半導体エネルギー研究所 表示装置
CN103926760B (zh) * 2013-01-14 2017-08-25 瀚宇彩晶股份有限公司 像素结构及像素阵列基板
JP6098309B2 (ja) * 2013-04-09 2017-03-22 セイコーエプソン株式会社 電気光学装置、電子機器、及び電気光学装置の製造方法
JP2013200574A (ja) * 2013-06-05 2013-10-03 Semiconductor Energy Lab Co Ltd 半導体装置
JP6367655B2 (ja) * 2013-09-13 2018-08-01 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5685633B2 (ja) * 2013-10-08 2015-03-18 株式会社半導体エネルギー研究所 表示装置
US9590111B2 (en) * 2013-11-06 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
JP6486660B2 (ja) * 2013-11-27 2019-03-20 株式会社半導体エネルギー研究所 表示装置
KR102132697B1 (ko) * 2013-12-05 2020-07-10 엘지디스플레이 주식회사 휘어진 디스플레이 장치
US9704888B2 (en) * 2014-01-08 2017-07-11 Apple Inc. Display circuitry with reduced metal routing resistance
KR102206377B1 (ko) * 2014-01-24 2021-01-22 삼성디스플레이 주식회사 액정 표시 장치
CN103985671B (zh) * 2014-04-30 2016-06-15 京东方科技集团股份有限公司 阵列基板制备方法和阵列基板、显示装置
JP5799132B2 (ja) * 2014-05-02 2015-10-21 株式会社半導体エネルギー研究所 表示装置、表示モジュール、及び電子機器
US10539839B2 (en) 2015-02-12 2020-01-21 Semiconductor Energy Laboratory Co., Ltd. Display device
JP6087970B2 (ja) * 2015-03-26 2017-03-01 株式会社半導体エネルギー研究所 表示装置、表示モジュール及び電子機器
CN110571227B (zh) * 2015-04-15 2021-12-07 群创光电股份有限公司 显示面板
US9899445B2 (en) * 2015-05-19 2018-02-20 Canon Kabushiki Kaisha Method for manufacturing solid-state image pickup apparatus, solid-state image pickup apparatus, and image pickup system including the same
JP2017022377A (ja) 2015-07-14 2017-01-26 株式会社半導体エネルギー研究所 半導体装置
CN105096871B (zh) * 2015-08-11 2017-08-08 京东方科技集团股份有限公司 阵列基板驱动电路、阵列基板、显示面板、显示装置
CN105226055B (zh) 2015-11-03 2018-06-01 京东方科技集团股份有限公司 阵列基板及制作方法、显示面板及显示装置
WO2017094644A1 (ja) * 2015-11-30 2017-06-08 シャープ株式会社 半導体基板及び表示装置
KR102611499B1 (ko) 2015-12-15 2023-12-06 엘지디스플레이 주식회사 플렉서블 표시장치
JP6749591B2 (ja) * 2015-12-29 2020-09-02 天馬微電子有限公司 表示装置および表示装置の製造方法
WO2017125828A1 (en) 2016-01-20 2017-07-27 Semiconductor Energy Laboratory Co., Ltd. Input device, input/output device, and data processing device
JP2018017981A (ja) * 2016-07-29 2018-02-01 株式会社ジャパンディスプレイ 電子機器
KR102833463B1 (ko) 2016-10-11 2025-07-11 삼성디스플레이 주식회사 표시 장치
CN111540779B (zh) * 2016-10-12 2023-01-06 群创光电股份有限公司 发光二极管显示设备
JP6999272B2 (ja) 2017-01-20 2022-01-18 株式会社ジャパンディスプレイ 表示装置
CN106876429B (zh) * 2017-02-16 2019-09-17 信利（惠州）智能显示有限公司 有机发光显示设备
JP6412181B2 (ja) * 2017-02-22 2018-10-24 株式会社半導体エネルギー研究所 半導体装置
JP6673386B2 (ja) * 2018-02-26 2020-03-25 セイコーエプソン株式会社 電気光学装置および電子機器
JP6566079B1 (ja) * 2018-04-25 2019-08-28 セイコーエプソン株式会社 電気光学装置、電子機器
CN108899339B (zh) * 2018-05-07 2021-04-30 武汉天马微电子有限公司 显示面板和显示装置
CN108767016B (zh) * 2018-05-21 2021-09-21 京东方科技集团股份有限公司 一种薄膜晶体管及其制作方法、阵列基板、显示装置
JP6466614B2 (ja) * 2018-06-04 2019-02-06 株式会社半導体エネルギー研究所 液晶表示装置
CN109064908B (zh) * 2018-10-31 2021-04-02 厦门天马微电子有限公司 阵列基板和显示面板
KR102819878B1 (ko) * 2019-03-15 2025-06-12 삼성디스플레이 주식회사 표시 장치
JP7352826B2 (ja) * 2019-10-21 2023-09-29 セイコーエプソン株式会社 電気光学装置および電子機器
CN112397562B (zh) * 2020-11-13 2023-09-22 合肥鑫晟光电科技有限公司 一种显示基板及其制备方法、显示装置
JP7540362B2 (ja) 2021-02-22 2024-08-27 セイコーエプソン株式会社 電気光学装置、及び電子機器

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0450941A2 (en) * 1990-04-05 1991-10-09 Sharp Kabushiki Kaisha An active matrix display device

Family Cites Families (96)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US523211A (en) * 1894-07-17 Car-door
US36836A (en) * 1862-11-04 Improvement in revolving battery-guns
DE3015936A1 (de) * 1980-04-25 1981-10-29 Albrecht G. Prof. Dr. 4600 Dortmund Fischer Herstellungsverfahren fuer duennfilmtransistor-grossmatrizen fuer flache bildschirme
US4337989A (en) * 1980-05-28 1982-07-06 Amp Incorporated Electromagnetic shielded connector
JPS586127A (ja) * 1981-07-03 1983-01-13 Hitachi Ltd フオトマスク欠陥修正方法とその装置
US5650637A (en) * 1982-04-30 1997-07-22 Seiko Epson Corporation Active matrix assembly
JPS59121876A (ja) 1982-12-28 1984-07-14 Toshiba Corp 薄膜デバイス用ガラス基板
JP2727562B2 (ja) 1988-04-27 1998-03-11 ソニー株式会社 表示装置
JPH02234128A (ja) 1989-03-08 1990-09-17 Hitachi Ltd 液晶表示装置の製造方法
JPH0728093Y2 (ja) 1989-05-16 1995-06-28 トーイン株式会社 容器類の多段収納パッケージ
JP2906470B2 (ja) 1989-08-23 1999-06-21 セイコーエプソン株式会社 アクティブマトリックス基板
JP3070062B2 (ja) * 1990-03-29 2000-07-24 ソニー株式会社 液晶表示装置及びその製造方法
ATE199046T1 (de) * 1990-05-09 2001-02-15 Canon Kk Erzeugung von mustern und herstellungsverfahren für halbleiteranordnungen mit diesem muster
JPH0451120A (ja) * 1990-06-19 1992-02-19 Nec Corp 薄膜電界効果型トランジスタ駆動液晶表示素子アレイ
JPH0472769A (ja) 1990-07-13 1992-03-06 Seiko Epson Corp 薄膜トランジスタ
JPH0824193B2 (ja) 1990-10-16 1996-03-06 工業技術院長 平板型光弁駆動用半導体装置の製造方法
JP3024661B2 (ja) 1990-11-09 2000-03-21 セイコーエプソン株式会社 アクティブマトリクス基板及びその製造方法
JPH04217230A (ja) * 1990-12-19 1992-08-07 Nec Corp 液晶表示素子およびその製造方法
JPH04283729A (ja) 1991-03-13 1992-10-08 Sharp Corp アクティブマトリクス表示装置
JP2998255B2 (ja) 1991-04-04 2000-01-11 セイコーエプソン株式会社 薄膜トランジスタ装置及びその製造方法
JP2776083B2 (ja) * 1991-08-23 1998-07-16 日本電気株式会社 液晶表示装置およびその製造方法
TW226044B (enExample) 1992-04-15 1994-07-01 Toshiba Co Ltd
JPH0621455A (ja) * 1992-06-30 1994-01-28 Sanyo Electric Co Ltd 薄膜トランジスタ
JP3357687B2 (ja) * 1992-07-15 2002-12-16 株式会社東芝 薄膜トランジスタおよび液晶表示装置の製造方法
JP2859784B2 (ja) * 1992-09-03 1999-02-24 シャープ株式会社 アクティブマトリクス基板
JP3287806B2 (ja) 1992-09-03 2002-06-04 シャープ株式会社 アクティブマトリクス基板
JP2950061B2 (ja) 1992-11-13 1999-09-20 日本電気株式会社 液晶表示素子
JPH06175154A (ja) * 1992-12-03 1994-06-24 Seiko Epson Corp 液晶表示装置の製造方法
JPH06202155A (ja) 1992-12-28 1994-07-22 Toshiba Corp 液晶表示装置の製造方法
JP2556252B2 (ja) * 1993-05-14 1996-11-20 日本電気株式会社 薄膜電界効果型トランジスタアレイ
JPH0728093A (ja) 1993-07-13 1995-01-31 Sony Corp 表示用アクティブマトリクス基板
JP3267011B2 (ja) * 1993-11-04 2002-03-18 セイコーエプソン株式会社 液晶表示装置
JPH07147411A (ja) 1993-11-24 1995-06-06 Sony Corp 表示素子基板用半導体装置
US5822026A (en) 1994-02-17 1998-10-13 Seiko Epson Corporation Active matrix substrate and color liquid crystal display
JP3298109B2 (ja) 1994-02-17 2002-07-02 セイコーエプソン株式会社 アクティブマトリクス基板及びカラー液晶表示装置
JPH07302912A (ja) * 1994-04-29 1995-11-14 Semiconductor Energy Lab Co Ltd 半導体装置
CN1146056C (zh) 1994-06-02 2004-04-14 株式会社半导体能源研究所 有源矩阵显示器
JP3253808B2 (ja) * 1994-07-07 2002-02-04 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JPH0869009A (ja) 1994-08-30 1996-03-12 Rohm Co Ltd Ｔｆｔ型液晶表示装置
JP3464287B2 (ja) 1994-09-05 2003-11-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH08122821A (ja) * 1994-10-28 1996-05-17 Hitachi Ltd 液晶表示装置およびその製造方法
JP2643098B2 (ja) * 1994-12-07 1997-08-20 インターナショナル・ビジネス・マシーンズ・コーポレイション 液晶表示装置及びその製造方法並びに画像形成方法
JP3307144B2 (ja) 1995-02-28 2002-07-24 ソニー株式会社 表示装置
JP3617857B2 (ja) 1995-04-17 2005-02-09 株式会社東芝 カラー撮像装置
JPH0926603A (ja) * 1995-05-08 1997-01-28 Semiconductor Energy Lab Co Ltd 表示装置
JP3307181B2 (ja) 1995-07-31 2002-07-24 ソニー株式会社 透過型表示装置
JP3642876B2 (ja) * 1995-08-04 2005-04-27 株式会社半導体エネルギー研究所 プラズマを用いる半導体装置の作製方法及びプラズマを用いて作製された半導体装置
JPH0990405A (ja) 1995-09-21 1997-04-04 Sharp Corp 薄膜トランジスタ
JP3490216B2 (ja) * 1996-04-24 2004-01-26 シャープ株式会社 スイッチング素子基板の製造方法
JP3245527B2 (ja) * 1995-12-13 2002-01-15 シャープ株式会社 液晶表示装置
US5917563A (en) * 1995-10-16 1999-06-29 Sharp Kabushiki Kaisha Liquid crystal display device having an insulation film made of organic material between an additional capacity and a bus line
JP3468986B2 (ja) * 1996-04-16 2003-11-25 株式会社半導体エネルギー研究所 アクティブマトリクス回路および表示装置
JP3433779B2 (ja) * 1996-06-19 2003-08-04 シャープ株式会社 アクティブマトリクス基板およびその製造方法
US6005648A (en) 1996-06-25 1999-12-21 Semiconductor Energy Laboratory Co., Ltd. Display device
JPH1010581A (ja) 1996-06-25 1998-01-16 Semiconductor Energy Lab Co Ltd 表示装置
JPH1010580A (ja) 1996-06-25 1998-01-16 Semiconductor Energy Lab Co Ltd 表示装置
JP3126661B2 (ja) * 1996-06-25 2001-01-22 株式会社半導体エネルギー研究所 液晶表示装置
JP3708637B2 (ja) 1996-07-15 2005-10-19 株式会社半導体エネルギー研究所 液晶表示装置
JPH1048667A (ja) 1996-08-01 1998-02-20 Seiko Epson Corp 液晶パネル用基板およびその製造方法並びに投射型表示装置
JP3634089B2 (ja) 1996-09-04 2005-03-30 株式会社半導体エネルギー研究所 表示装置
JP3830213B2 (ja) 1996-10-04 2006-10-04 セイコーエプソン株式会社 スイッチング素子を備えた基板及び液晶表示パネル並びにそれを用いた電子機器
TWI236556B (en) * 1996-10-16 2005-07-21 Seiko Epson Corp Substrate for a liquid crystal equipment, liquid crystal equipment and projection type display equipment
JP3728755B2 (ja) * 1996-10-22 2005-12-21 セイコーエプソン株式会社 アクティブマトリックス型液晶パネル
JP3087841B2 (ja) * 1996-10-29 2000-09-11 日本電気株式会社 広視野角液晶表示装置
JPH10133217A (ja) * 1996-11-05 1998-05-22 Hosiden Corp 液晶表示素子
JP3588945B2 (ja) * 1996-11-25 2004-11-17 セイコーエプソン株式会社 アクティブマトリクス基板の製造方法
US6532053B2 (en) * 1996-12-18 2003-03-11 Hitachi, Ltd. Transverse electric field system liquid crystal display device suitable for improving aperture ratio
JP3468003B2 (ja) 1996-12-20 2003-11-17 ソニー株式会社 表示用薄膜半導体装置
JP4201862B2 (ja) * 1997-02-27 2008-12-24 シャープ株式会社 液晶表示装置
JP3784491B2 (ja) 1997-03-28 2006-06-14 株式会社半導体エネルギー研究所 アクティブマトリクス型の表示装置
JPH10282527A (ja) 1997-04-11 1998-10-23 Casio Comput Co Ltd 液晶表示装置
US5889302A (en) * 1997-04-21 1999-03-30 Advanced Micro Devices, Inc. Multilayer floating gate field effect transistor structure for use in integrated circuit devices
JPH112844A (ja) * 1997-06-13 1999-01-06 Nec Corp 液晶表示パネル及びその製造方法
JP3767154B2 (ja) * 1997-06-17 2006-04-19 セイコーエプソン株式会社 電気光学装置用基板、電気光学装置、電子機器及び投写型表示装置
JP3892115B2 (ja) 1997-07-07 2007-03-14 株式会社半導体エネルギー研究所 ディスプレイ及びディスプレイを備えた装置
JP3929119B2 (ja) 1997-08-04 2007-06-13 株式会社アドバンスト・ディスプレイ 液晶表示装置
JP3919900B2 (ja) 1997-09-19 2007-05-30 株式会社半導体エネルギー研究所 液晶表示装置およびその作製方法
JP4050377B2 (ja) * 1997-10-31 2008-02-20 セイコーエプソン株式会社 液晶装置及び電子機器並びに投射型表示装置
JP4312851B2 (ja) * 1998-04-27 2009-08-12 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP3702096B2 (ja) 1998-06-08 2005-10-05 三洋電機株式会社 薄膜トランジスタ及び表示装置
KR100357213B1 (ko) * 1998-07-23 2002-10-18 엘지.필립스 엘시디 주식회사 멀티도메인 액정표시소자
JP2000058847A (ja) 1998-07-31 2000-02-25 Semiconductor Energy Lab Co Ltd 半導体素子からなる半導体回路を備えた半導体装置およびその作製方法
JP3141860B2 (ja) 1998-10-28 2001-03-07 ソニー株式会社 液晶表示装置の製造方法
TW413844B (en) * 1998-11-26 2000-12-01 Samsung Electronics Co Ltd Manufacturing methods of thin film transistor array panels for liquid crystal displays and photolithography method of thin films
EP1020920B1 (en) * 1999-01-11 2010-06-02 Sel Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a driver TFT and a pixel TFT on a common substrate
JP4372943B2 (ja) * 1999-02-23 2009-11-25 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US7821065B2 (en) * 1999-03-02 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a thin film transistor comprising a semiconductor thin film and method of manufacturing the same
US6531993B1 (en) * 1999-03-05 2003-03-11 Semiconductor Energy Laboratory Co., Ltd. Active matrix type display device
JP2000284723A (ja) * 1999-03-30 2000-10-13 Sanyo Electric Co Ltd 表示装置
US7122835B1 (en) * 1999-04-07 2006-10-17 Semiconductor Energy Laboratory Co., Ltd. Electrooptical device and a method of manufacturing the same
TW478014B (en) * 1999-08-31 2002-03-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing thereof
JP4700156B2 (ja) * 1999-09-27 2011-06-15 株式会社半導体エネルギー研究所 半導体装置
JP4118484B2 (ja) * 2000-03-06 2008-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2001257350A (ja) * 2000-03-08 2001-09-21 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2002319679A (ja) * 2001-04-20 2002-10-31 Semiconductor Energy Lab Co Ltd 半導体装置
JP2003149681A (ja) * 2002-07-18 2003-05-21 Seiko Epson Corp 液晶パネル用基板、液晶パネル及び投射型表示装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0450941A2 (en) * 1990-04-05 1991-10-09 Sharp Kabushiki Kaisha An active matrix display device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Juhn-Suk Yoo等.Pixel Design for TFT-LCD with Double Gate Poly-Si TFT and Double Layer Storage Capacitor.《Information Display, 1997., Proceedings of the Fourth Asian Symposium on》.IEEE CONFERENCES,1997,219-222. *

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