JP2010282216A - 半導体装置およびその作製方法 - Google Patents
半導体装置およびその作製方法 Download PDFInfo
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- JP2010282216A JP2010282216A JP2010166966A JP2010166966A JP2010282216A JP 2010282216 A JP2010282216 A JP 2010282216A JP 2010166966 A JP2010166966 A JP 2010166966A JP 2010166966 A JP2010166966 A JP 2010166966A JP 2010282216 A JP2010282216 A JP 2010282216A
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- film
- semiconductor film
- storage capacitor
- insulating film
- scanning line
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Abstract
【解決手段】薄膜トランジスタと、保持容量とが設けられた画素と、走査線と、走査線に直交して設けられた信号線と、を有し、走査線の上方には、薄膜トランジスタのソース領域、ドレイン領域、及びチャネル形成領域が形成される部分と保持容量の下部電極となる部分とを有する半導体膜が設けられ、半導体膜上には絶縁膜が設けられ、半導体膜のチャネル形成領域となる部分の上方には、絶縁膜を介して走査線と電気的に接続されたゲート電極が設けられ、半導体膜の下部電極となる部分の上方には、絶縁膜を介して保持容量の上部電極が設けられ、半導体膜は、基板に平行であり、ゲート電極は、保持容量の上部電極より半導体膜を基準に高い場所に設けられ、ゲート電極及び上部電極の上方には、信号線が設けられている表示装置。
【選択図】図1
Description
なお、簡略化のため、ソース領域、ドレイン領域、及びチャネル形成領域は図示していない。
この際、島状に配置される各ゲート電極は第1絶縁膜103及び第2絶縁膜105に形成された第1コンタクトホール100cを介して走査線102に電気的に接続する。
(図12(A1))次いで、層間絶縁膜420上に遮光性を有する導電膜100nmを成膜し、遮光層421を形成する。次いで、層間絶縁膜422を形成する。次いで、電極418に達するコンタクトホール形成する。次いで、100nmの透明導電膜(ここでは酸化インジウム・スズ(ITO)膜)を形成した後、パターニングして画素電極423、424を形成する。図12(A2)において、点線E−E’で切断した断面図が図12(A1)に相当する。
例えば、各導電膜としては、タンタル(Ta)、チタン(Ti)、モリブデン(Mo)、タングステン(W)、クロム(Cr)、シリコン(Si)から選ばれた元素、または前記元素を組み合わせた合金膜(代表的には、Mo―W合金、Mo―Ta合金)を用いることができる。また、各絶縁膜としては、酸化シリコン膜や窒化シリコン膜や酸化窒化シリコン膜や有機樹脂材料(ポリイミド、アクリル、ポリアミド、ポリイミドアミド、BCB(ベンゾシクロブテン)等)膜を用いることができる。
は、Vd=0.1Vである場合に0.946V、Vd=5Vである場合に0.886Vとなっており、その差は0.06と非常に小さい。この差が小さければ小さいほど短チャネル効果が抑えられていると言える。また、移動度(μFE)は220(cm2/Vs)と優れたものとなっている。
そのため、保持容量を効率よく確保することができ、この画素構造を用いた液晶表示装置のコントラストが向上する。
Claims (8)
- 薄膜トランジスタと、保持容量とが設けられた画素と、
走査線と、
前記走査線に直交して設けられた信号線と、を有し、
前記走査線の上方には、前記薄膜トランジスタのソース領域、ドレイン領域、及びチャネル形成領域が形成される部分と前記保持容量の下部電極となる部分とを有する半導体膜が設けられ、
前記半導体膜上には絶縁膜が設けられ、
前記半導体膜のチャネル形成領域となる部分の上方には、前記絶縁膜を介して前記走査線と電気的に接続されたゲート電極が設けられ、
前記半導体膜の前記下部電極となる部分の上方には、前記絶縁膜を介して前記保持容量の上部電極が設けられ、
前記半導体膜は、基板に平行であり、
前記ゲート電極は、前記保持容量の前記上部電極より前記半導体膜を基準に高い場所に設けられ、
前記ゲート電極及び前記上部電極の上方には、前記信号線が設けられていることを特徴とする表示装置。 - 薄膜トランジスタと、保持容量とが設けられた画素と、
走査線と、
前記走査線に直交して設けられた信号線と、を有し、
前記走査線の上方には、前記薄膜トランジスタのソース領域、ドレイン領域、及びチャネル形成領域が形成される部分と前記保持容量の下部電極となる部分とを有する半導体膜が設けられ、
前記半導体膜上には絶縁膜が設けられ、
前記半導体膜のチャネル形成領域となる部分の上方には、前記絶縁膜を介して前記走査線と電気的に接続されたゲート電極が設けられ、
前記半導体膜の前記下部電極となる部分の上方には、前記絶縁膜を介して前記保持容量の上部電極が設けられ、
前記半導体膜は、基板に平行であり、
前記ゲート電極は、前記保持容量の前記上部電極より前記半導体膜を基準に高い場所に設けられ、
前記薄膜トランジスタのソース領域、ドレイン領域、及びチャネル形成領域は、前記走査線と重なるように設けられていることを特徴とする表示装置。 - 薄膜トランジスタと、保持容量とが設けられた画素と、
走査線と、
前記走査線に直交して設けられた信号線と、を有し、
前記走査線の上方には、前記薄膜トランジスタのソース領域、ドレイン領域、及びチャネル形成領域が形成される部分と前記保持容量の下部電極となる部分とを有する半導体膜が設けられ、
前記半導体膜上には絶縁膜が設けられ、
前記半導体膜のチャネル形成領域となる部分の上方には、前記絶縁膜を介して前記走査線と電気的に接続されたゲート電極が設けられ、
前記半導体膜の前記下部電極となる部分の上方には、前記絶縁膜を介して前記保持容量の上部電極が設けられ、
前記半導体膜は、基板に平行であり、
前記ゲート電極は、前記保持容量の前記上部電極より前記半導体膜を基準に高い場所に設けられ、
前記ゲート電極及び前記上部電極の上方には、前記信号線が設けられ、
前記信号線の上方には、遮光膜が前記半導体膜と重なるように設けられていることを特徴とする表示装置。 - 請求項1乃至3のいずれか1項において、
前記ゲート電極は、導電型を付与する不純物がドープされたpoly−Si、WSiX(X=2.0〜2.8)、Al、Ta、W、CrもしくはMoからなる導電膜、又は、これらの導電膜から選ばれた膜を積層した膜であることを特徴とする表示装置。 - 請求項1乃至4のいずれか1項において、
前記走査線は、導電型を付与する不純物元素がドープされたpoly−Si、WSiX(X=2.0〜2.8)、Al、Ta、W、CrもしくはMoでなる導電膜、又は、これらの導電膜から選ばれた膜を積層した膜であることを特徴とする表示装置。 - 請求項1乃至5のいずれか1項において、
前記信号線は、Al、W、TiもしくはTiNを主成分とする膜、又は、これらの導電膜から選ばれた膜を積層した膜であることを特徴とする表示装置。 - 請求項1乃至6のいずれか1項において、
前記保持容量の前記上部電極は、導電型を付与する不純物元素がドープされたpoly−Si、WSiX(X=2.0〜2.8)、Al、Ta、W、CrもしくはMoでなる導電膜、又は、これらの導電膜から選ばれた膜を積層した膜であることを特徴とする表示装置。 - 液晶表示装置であることを特徴とする請求項1乃至7のいずれか1項に記載の表示装置。
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CN109064908B (zh) * | 2018-10-31 | 2021-04-02 | 厦门天马微电子有限公司 | 阵列基板和显示面板 |
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