ATE199046T1 - Erzeugung von mustern und herstellungsverfahren für halbleiteranordnungen mit diesem muster - Google Patents
Erzeugung von mustern und herstellungsverfahren für halbleiteranordnungen mit diesem musterInfo
- Publication number
- ATE199046T1 ATE199046T1 AT91304134T AT91304134T ATE199046T1 AT E199046 T1 ATE199046 T1 AT E199046T1 AT 91304134 T AT91304134 T AT 91304134T AT 91304134 T AT91304134 T AT 91304134T AT E199046 T1 ATE199046 T1 AT E199046T1
- Authority
- AT
- Austria
- Prior art keywords
- pattern
- patterns
- generation
- production processes
- semiconductor arrangements
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title 1
- 238000005530 etching Methods 0.000 abstract 3
- -1 hydrogen ions Chemical class 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 229910052731 fluorine Inorganic materials 0.000 abstract 1
- 239000011737 fluorine Substances 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
- G03F7/2043—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means with the production of a chemical active agent from a fluid, e.g. an etching agent; with meterial deposition from the fluid phase, e.g. contamination resists
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/907—Continuous processing
- Y10S438/908—Utilizing cluster apparatus
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2117644A JP2709175B2 (ja) | 1990-05-09 | 1990-05-09 | エッチングパターンの形成方法 |
JP2118675A JP2966036B2 (ja) | 1990-05-10 | 1990-05-10 | エッチングパターンの形成方法 |
JP15868790A JPH0449623A (ja) | 1990-06-19 | 1990-06-19 | 光処理装置 |
JP2174443A JP2849458B2 (ja) | 1990-07-03 | 1990-07-03 | 半導体装置の製造方法および製造装置 |
JP2308550A JPH04181712A (ja) | 1990-11-16 | 1990-11-16 | 選択照射光を用いたパターン形成装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE199046T1 true ATE199046T1 (de) | 2001-02-15 |
Family
ID=27526774
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT91304134T ATE199046T1 (de) | 1990-05-09 | 1991-05-08 | Erzeugung von mustern und herstellungsverfahren für halbleiteranordnungen mit diesem muster |
Country Status (4)
Country | Link |
---|---|
US (3) | US5344522A (de) |
EP (3) | EP0706088A1 (de) |
AT (1) | ATE199046T1 (de) |
DE (2) | DE69133169D1 (de) |
Families Citing this family (67)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE200829T1 (de) * | 1990-09-26 | 2001-05-15 | Canon Kk | Photolithographisches verarbeitungsverfahren und vorrichtung |
US5824455A (en) * | 1990-09-26 | 1998-10-20 | Canon Kabushiki Kaisha | Processing method and apparatus |
US5534072A (en) * | 1992-06-24 | 1996-07-09 | Anelva Corporation | Integrated module multi-chamber CVD processing system and its method for processing subtrates |
US7097712B1 (en) | 1992-12-04 | 2006-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus for processing a semiconductor |
JPH06267986A (ja) * | 1993-03-17 | 1994-09-22 | Hitachi Ltd | 薄膜トランジスタの製造方法 |
DE4315959C2 (de) * | 1993-05-12 | 1997-09-11 | Max Planck Gesellschaft | Verfahren zur Herstellung einer strukturierten Schicht eines Halbleitermaterials sowie einer Dotierungsstruktur in einem Halbleitermaterial unter Einwirkung von Laserstrahlung |
CN1052566C (zh) | 1993-11-05 | 2000-05-17 | 株式会社半导体能源研究所 | 制造半导体器件的方法 |
US6897100B2 (en) * | 1993-11-05 | 2005-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device |
BE1007907A3 (nl) * | 1993-12-24 | 1995-11-14 | Asm Lithography Bv | Lenzenstelsel met in gasgevulde houder aangebrachte lenselementen en fotolithografisch apparaat voorzien van een dergelijk stelsel. |
JPH0992602A (ja) * | 1995-09-26 | 1997-04-04 | Canon Inc | マスク構造体及びその製造方法 |
JP3177948B2 (ja) * | 1997-03-10 | 2001-06-18 | 日本電気株式会社 | 露光用フォトマスク |
US6068728A (en) * | 1997-08-28 | 2000-05-30 | Seagate Technology, Inc. | Laser texturing with reverse lens focusing system |
US6673126B2 (en) * | 1998-05-14 | 2004-01-06 | Seiko Epson Corporation | Multiple chamber fabrication equipment for thin film transistors in a display or electronic device |
EP0973069A3 (de) * | 1998-07-14 | 2006-10-04 | Nova Measuring Instruments Limited | Kontrollgerät und photolithographisches Verfahren zur Behandlung von Substraten |
KR100303446B1 (ko) * | 1998-10-29 | 2002-10-04 | 삼성전자 주식회사 | 액정표시장치용박막트랜지스터기판의제조방법 |
US6339028B2 (en) * | 1999-04-27 | 2002-01-15 | Stmicroelectronics, Inc. | Vacuum loadlock ultra violet bake for plasma etch |
JP2001054131A (ja) * | 1999-05-31 | 2001-02-23 | Olympus Optical Co Ltd | カラー画像表示システム |
IL130874A (en) | 1999-07-09 | 2002-12-01 | Nova Measuring Instr Ltd | System and method for measuring pattern structures |
US8531678B2 (en) | 1999-07-09 | 2013-09-10 | Nova Measuring Instruments, Ltd. | Method and system for measuring patterned structures |
JP3751772B2 (ja) * | 1999-08-16 | 2006-03-01 | 日本電気株式会社 | 半導体薄膜製造装置 |
TW478014B (en) | 1999-08-31 | 2002-03-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing thereof |
US6444372B1 (en) | 1999-10-25 | 2002-09-03 | Svg Lithography Systems, Inc. | Non absorbing reticle and method of making same |
JP4560182B2 (ja) * | 2000-07-06 | 2010-10-13 | キヤノン株式会社 | 減圧処理装置、半導体製造装置およびデバイス製造方法 |
JP2002141512A (ja) * | 2000-11-06 | 2002-05-17 | Advanced Display Inc | 薄膜のパターニング方法およびそれを用いたtftアレイ基板およびその製造方法 |
US6800210B2 (en) * | 2001-05-22 | 2004-10-05 | Reflectivity, Inc. | Method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants |
US20040007325A1 (en) * | 2002-06-11 | 2004-01-15 | Applied Materials, Inc. | Integrated equipment set for forming a low K dielectric interconnect on a substrate |
US20040206621A1 (en) * | 2002-06-11 | 2004-10-21 | Hongwen Li | Integrated equipment set for forming a low K dielectric interconnect on a substrate |
DE60310528T2 (de) | 2003-05-07 | 2007-09-27 | Stmicroelectronics S.R.L., Agrate Brianza | Verfahren zum Festlegen einer Chalcogenidmaterial-Schicht, insbesondere in einem Verfahren zur Herstellung von Phasenumwandlungs-Speicherzellen |
US20040224524A1 (en) * | 2003-05-09 | 2004-11-11 | Applied Materials, Inc. | Maintaining the dimensions of features being etched on a lithographic mask |
US20050101147A1 (en) * | 2003-11-08 | 2005-05-12 | Advanced Micro Devices, Inc. | Method for integrating a high-k gate dielectric in a transistor fabrication process |
KR100674652B1 (ko) * | 2004-04-16 | 2007-01-25 | 학교법인 포항공과대학교 | 마이크로 시스템의 가상환경 기반 어셈블리 프리 프로세스방법 |
US7253125B1 (en) | 2004-04-16 | 2007-08-07 | Novellus Systems, Inc. | Method to improve mechanical strength of low-k dielectric film using modulated UV exposure |
JP4344886B2 (ja) * | 2004-09-06 | 2009-10-14 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US9659769B1 (en) | 2004-10-22 | 2017-05-23 | Novellus Systems, Inc. | Tensile dielectric films using UV curing |
CN100361113C (zh) * | 2005-02-05 | 2008-01-09 | 上海微电子装备有限公司 | 步进扫描投影光刻机的高速同步广播总线系统 |
US8454750B1 (en) | 2005-04-26 | 2013-06-04 | Novellus Systems, Inc. | Multi-station sequential curing of dielectric films |
US8889233B1 (en) | 2005-04-26 | 2014-11-18 | Novellus Systems, Inc. | Method for reducing stress in porous dielectric films |
US8137465B1 (en) * | 2005-04-26 | 2012-03-20 | Novellus Systems, Inc. | Single-chamber sequential curing of semiconductor wafers |
US8282768B1 (en) | 2005-04-26 | 2012-10-09 | Novellus Systems, Inc. | Purging of porogen from UV cure chamber |
US8980769B1 (en) | 2005-04-26 | 2015-03-17 | Novellus Systems, Inc. | Multi-station sequential curing of dielectric films |
US7871933B2 (en) * | 2005-12-01 | 2011-01-18 | International Business Machines Corporation | Combined stepper and deposition tool |
US8398816B1 (en) | 2006-03-28 | 2013-03-19 | Novellus Systems, Inc. | Method and apparatuses for reducing porogen accumulation from a UV-cure chamber |
US7622310B2 (en) * | 2006-04-27 | 2009-11-24 | Metrosol, Inc. | Contamination monitoring and control techniques for use with an optical metrology instrument |
US7663747B2 (en) * | 2006-04-27 | 2010-02-16 | Metrosol, Inc. | Contamination monitoring and control techniques for use with an optical metrology instrument |
US20100267231A1 (en) * | 2006-10-30 | 2010-10-21 | Van Schravendijk Bart | Apparatus for uv damage repair of low k films prior to copper barrier deposition |
US10037905B2 (en) * | 2009-11-12 | 2018-07-31 | Novellus Systems, Inc. | UV and reducing treatment for K recovery and surface clean in semiconductor processing |
US8465991B2 (en) * | 2006-10-30 | 2013-06-18 | Novellus Systems, Inc. | Carbon containing low-k dielectric constant recovery using UV treatment |
US8211510B1 (en) | 2007-08-31 | 2012-07-03 | Novellus Systems, Inc. | Cascaded cure approach to fabricate highly tensile silicon nitride films |
US8426778B1 (en) | 2007-12-10 | 2013-04-23 | Novellus Systems, Inc. | Tunable-illumination reflector optics for UV cure system |
US9050623B1 (en) | 2008-09-12 | 2015-06-09 | Novellus Systems, Inc. | Progressive UV cure |
US9346130B2 (en) | 2008-12-17 | 2016-05-24 | Electro Scientific Industries, Inc. | Method for laser processing glass with a chamfered edge |
US20110318503A1 (en) * | 2010-06-29 | 2011-12-29 | Christian Adams | Plasma enhanced materials deposition system |
US20120168412A1 (en) * | 2011-01-05 | 2012-07-05 | Electro Scientific Industries, Inc | Apparatus and method for forming an aperture in a substrate |
CN104136967B (zh) | 2012-02-28 | 2018-02-16 | 伊雷克托科学工业股份有限公司 | 用于分离增强玻璃的方法及装置及由该增强玻璃生产的物品 |
US10357850B2 (en) | 2012-09-24 | 2019-07-23 | Electro Scientific Industries, Inc. | Method and apparatus for machining a workpiece |
US9828278B2 (en) | 2012-02-28 | 2017-11-28 | Electro Scientific Industries, Inc. | Method and apparatus for separation of strengthened glass and articles produced thereby |
WO2013130608A1 (en) | 2012-02-29 | 2013-09-06 | Electro Scientific Industries, Inc. | Methods and apparatus for machining strengthened glass and articles produced thereby |
CN103389616B (zh) * | 2012-05-11 | 2016-02-10 | 上海华虹宏力半导体制造有限公司 | 能够改善发射极窗口尺寸均匀性的SiGe器件制造方法 |
US9776906B2 (en) | 2014-03-28 | 2017-10-03 | Electro Scientific Industries, Inc. | Laser machining strengthened glass |
KR20150145837A (ko) * | 2014-06-19 | 2015-12-31 | 삼성전자주식회사 | 2차원 물질 식각장치 및 이를 이용하여 2차원 물질층을 패터닝하는 방법 |
JP6661283B2 (ja) * | 2015-05-14 | 2020-03-11 | 東京エレクトロン株式会社 | クリーニング方法及びプラズマ処理方法 |
US10388546B2 (en) | 2015-11-16 | 2019-08-20 | Lam Research Corporation | Apparatus for UV flowable dielectric |
US10347547B2 (en) | 2016-08-09 | 2019-07-09 | Lam Research Corporation | Suppressing interfacial reactions by varying the wafer temperature throughout deposition |
WO2018048266A1 (ko) * | 2016-09-12 | 2018-03-15 | 주식회사 다원시스 | 마스크의 세정 장치 및 마스크 세정 방법 |
US9847221B1 (en) | 2016-09-29 | 2017-12-19 | Lam Research Corporation | Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing |
WO2018236135A1 (ko) * | 2017-06-20 | 2018-12-27 | 주식회사 다원시스 | 마스크의 세정 장치 및 마스크 세정 방법 |
JP2021125541A (ja) * | 2020-02-04 | 2021-08-30 | キオクシア株式会社 | 処理装置および処理方法 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3326717A (en) * | 1962-12-10 | 1967-06-20 | Ibm | Circuit fabrication |
US3346384A (en) * | 1963-04-25 | 1967-10-10 | Gen Electric | Metal image formation |
DE1251152B (de) * | 1966-04-09 | 1967-09-28 | Telef unken Patentverwertungsgesellschaft mbH, Ulm/Donau | I Photomaske |
US3664899A (en) * | 1969-12-29 | 1972-05-23 | Gen Electric | Removal of organic polymeric films from a substrate |
SU938338A1 (ru) * | 1978-10-30 | 1982-06-23 | Предприятие П/Я Р-6707 | Фотошаблон и способ его изготовлени |
JPS5672445A (en) * | 1979-11-19 | 1981-06-16 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Production of photomask |
JPS56150703A (en) * | 1980-04-23 | 1981-11-21 | Dainippon Printing Co Ltd | Direction-selective light shielding or reflecting sheet and its production |
US4348473A (en) * | 1981-03-04 | 1982-09-07 | Xerox Corporation | Dry process for the production of microelectronic devices |
US4361461A (en) * | 1981-03-13 | 1982-11-30 | Bell Telephone Laboratories, Incorporated | Hydrogen etching of semiconductors and oxides |
JPS57155535A (en) * | 1981-03-20 | 1982-09-25 | Toppan Printing Co Ltd | Image forming material |
DE3146150A1 (de) * | 1981-11-21 | 1983-06-01 | Veb Hochvakuum Dresden, Ddr 8020 Dresden | Belichtungsmaske fuer die duennschichttechnik |
JPS60247927A (ja) * | 1984-05-23 | 1985-12-07 | Toshiba Corp | パタ−ン形成方法 |
JPS6175529A (ja) * | 1984-09-21 | 1986-04-17 | Toshiba Corp | ドライエツチング方法及び装置 |
JPS6196737A (ja) * | 1984-10-17 | 1986-05-15 | Toshiba Corp | 半導体装置の製造方法 |
US4811684A (en) * | 1984-11-26 | 1989-03-14 | Semiconductor Energy Laboratory Co., Ltd. | Photo CVD apparatus, with deposition prevention in light source chamber |
JPS61187237A (ja) * | 1985-02-14 | 1986-08-20 | Toshiba Corp | パタ−ン形成方法 |
US4761199A (en) * | 1985-04-10 | 1988-08-02 | Canon Kabushiki Kaisha | Shutter device for ion beam etching apparatus and such etching apparatus using same |
JPS61272746A (ja) * | 1985-05-28 | 1986-12-03 | Asahi Glass Co Ltd | フオトマスクブランクおよびフオトマスク |
JPS61278146A (ja) * | 1985-06-03 | 1986-12-09 | Toshiba Corp | 光処理方法 |
JPS62219525A (ja) | 1986-03-19 | 1987-09-26 | Fujitsu Ltd | 光照射エツチング法 |
JPS62217245A (ja) * | 1986-03-19 | 1987-09-24 | Fujitsu Ltd | 低反射フオトマスク |
DE3628374A1 (de) * | 1986-08-21 | 1988-02-25 | Siemens Ag | Verfahren zum herstellen von aus polykristallinem silizium bestehenden schichtstrukturen, insbesondere fuer emitteranschlussgebiete in integrierten halbleiterschaltungen |
JPH0797216B2 (ja) * | 1986-10-29 | 1995-10-18 | インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション | マスクの製造方法 |
US4770947A (en) * | 1987-01-02 | 1988-09-13 | International Business Machines Corporation | Multiple density mask and fabrication thereof |
US5024724A (en) * | 1987-03-27 | 1991-06-18 | Sanyo Electric Co., Ltd. | Dry-etching method |
US5024716A (en) * | 1988-01-20 | 1991-06-18 | Canon Kabushiki Kaisha | Plasma processing apparatus for etching, ashing and film-formation |
WO1989007285A1 (en) * | 1988-01-29 | 1989-08-10 | Massachusetts Institute Of Technology | Integrated circuit micro-fabrication using dry lithographic processes |
GB8806800D0 (en) * | 1988-03-22 | 1988-04-20 | British Telecomm | Etching methods |
US4960675A (en) * | 1988-08-08 | 1990-10-02 | Midwest Research Institute | Hydrogen ion microlithography |
JP2823276B2 (ja) * | 1989-03-18 | 1998-11-11 | 株式会社東芝 | X線マスクの製造方法および薄膜の内部応力制御装置 |
-
1991
- 1991-05-08 EP EP95203232A patent/EP0706088A1/de not_active Withdrawn
- 1991-05-08 DE DE69133169T patent/DE69133169D1/de not_active Expired - Lifetime
- 1991-05-08 DE DE69132523T patent/DE69132523D1/de not_active Expired - Lifetime
- 1991-05-08 AT AT91304134T patent/ATE199046T1/de not_active IP Right Cessation
- 1991-05-08 EP EP95203233A patent/EP0714119B1/de not_active Expired - Lifetime
- 1991-05-08 EP EP91304134A patent/EP0456479B1/de not_active Expired - Lifetime
-
1993
- 1993-01-29 US US08/013,180 patent/US5344522A/en not_active Expired - Fee Related
-
1994
- 1994-07-20 US US08/275,757 patent/US5413664A/en not_active Expired - Fee Related
-
1995
- 1995-02-28 US US08/395,472 patent/US5490896A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0456479B1 (de) | 2001-01-31 |
US5344522A (en) | 1994-09-06 |
US5490896A (en) | 1996-02-13 |
EP0714119B1 (de) | 2002-12-04 |
DE69133169D1 (de) | 2003-01-16 |
US5413664A (en) | 1995-05-09 |
EP0456479A2 (de) | 1991-11-13 |
EP0706088A1 (de) | 1996-04-10 |
DE69132523D1 (de) | 2001-03-08 |
EP0714119A2 (de) | 1996-05-29 |
EP0456479A3 (en) | 1992-11-19 |
EP0714119A3 (de) | 1996-07-03 |
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Legal Events
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RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |