CN101794807A - 包括开关器件和电阻材料的非易失存储器及制造方法 - Google Patents

包括开关器件和电阻材料的非易失存储器及制造方法 Download PDF

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Publication number
CN101794807A
CN101794807A CN201010114820A CN201010114820A CN101794807A CN 101794807 A CN101794807 A CN 101794807A CN 201010114820 A CN201010114820 A CN 201010114820A CN 201010114820 A CN201010114820 A CN 201010114820A CN 101794807 A CN101794807 A CN 101794807A
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China
Prior art keywords
material layer
storage material
resistance
data storage
voltage
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Pending
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CN201010114820A
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English (en)
Chinese (zh)
Inventor
徐顺爱
柳寅儆
李明宰
朴玩浚
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication of CN101794807A publication Critical patent/CN101794807A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/32—Material having simple binary metal oxide structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
CN201010114820A 2003-06-03 2004-06-02 包括开关器件和电阻材料的非易失存储器及制造方法 Pending CN101794807A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR35562/03 2003-06-03
KR1020030035562A KR100773537B1 (ko) 2003-06-03 2003-06-03 한 개의 스위칭 소자와 한 개의 저항체를 포함하는비휘발성 메모리 장치 및 그 제조 방법

Related Parent Applications (1)

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CN2004100465448A Division CN1574363B (zh) 2003-06-03 2004-06-02 包括开关器件和电阻材料的非易失存储器及制造方法

Publications (1)

Publication Number Publication Date
CN101794807A true CN101794807A (zh) 2010-08-04

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CN201010114820A Pending CN101794807A (zh) 2003-06-03 2004-06-02 包括开关器件和电阻材料的非易失存储器及制造方法
CN2004100465448A Expired - Lifetime CN1574363B (zh) 2003-06-03 2004-06-02 包括开关器件和电阻材料的非易失存储器及制造方法

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Country Status (6)

Country Link
US (2) US8164130B2 (https=)
EP (3) EP1484799B1 (https=)
JP (1) JP4511249B2 (https=)
KR (1) KR100773537B1 (https=)
CN (2) CN101794807A (https=)
DE (1) DE602004025877D1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103682100A (zh) * 2013-12-06 2014-03-26 南昌大学 氧化锌/聚甲基丙烯酸甲酯/硫氰酸亚铜结构的数据存储器及制备方法
CN105448948A (zh) * 2014-09-30 2016-03-30 华邦电子股份有限公司 电阻式随机存取存储器
US10305033B2 (en) 2014-09-19 2019-05-28 Winbond Electronics Corp. Resistive random access memory

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DE602004025877D1 (de) 2010-04-22
CN1574363A (zh) 2005-02-02
EP1947696B1 (en) 2011-07-06
JP2004363604A (ja) 2004-12-24
EP1947696A1 (en) 2008-07-23
US8101983B2 (en) 2012-01-24
EP2164104A2 (en) 2010-03-17
EP1484799A2 (en) 2004-12-08
US20040245557A1 (en) 2004-12-09
EP1484799A3 (en) 2006-06-14
US20070114587A1 (en) 2007-05-24
EP1484799B1 (en) 2010-03-10
KR100773537B1 (ko) 2007-11-07

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