JP5012312B2 - 記憶装置の駆動方法 - Google Patents
記憶装置の駆動方法 Download PDFInfo
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- JP5012312B2 JP5012312B2 JP2007211733A JP2007211733A JP5012312B2 JP 5012312 B2 JP5012312 B2 JP 5012312B2 JP 2007211733 A JP2007211733 A JP 2007211733A JP 2007211733 A JP2007211733 A JP 2007211733A JP 5012312 B2 JP5012312 B2 JP 5012312B2
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- 238000000034 method Methods 0.000 title claims abstract description 44
- 239000012212 insulator Substances 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000010949 copper Substances 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 abstract description 9
- 239000004020 conductor Substances 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 6
- 230000006378 damage Effects 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910021645 metal ion Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 2
- 229910002531 CuTe Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0061—Timing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/0071—Write using write potential applied to access device gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/0073—Write using bi-directional cell biasing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/0092—Write characterized by the shape, e.g. form, length, amplitude of the write pulse
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/50—Resistive cell structure aspects
- G11C2213/56—Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8416—Electrodes adapted for supplying ionic species
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
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- Semiconductor Memories (AREA)
Description
図1は、本発明の第1の実施の形態に係る記憶装置の駆動方法が適用される記憶装置におけるメモリセル1の回路構成例を表すものである。このメモリセル1は、可変抵抗素子2と、選択トランジスタTrと、ゲート電圧電源31と、スイッチSWと、書込み電圧電源32と、消去電圧電源(図示せず)とを含んで構成されている。なお、このような構成の複数のメモリセル1が例えばマトリクス状に配置されることにより、記憶装置(メモリ)が構成されるようになっている。
次に、本発明の第2の実施の形態について説明する。なお、第1の実施の形態における構成要素と同一のものには同一の符号を付し、適宜説明を省略する。
Claims (8)
- 一対の電極を有すると共にこの一対の電極間に異なる極性の電圧を印加することにより抵抗値が可逆的に変化する可変抵抗素子を含んで構成された記憶装置に適用される駆動方法であって、
前記可変抵抗素子の抵抗値が高い高抵抗状態から可変抵抗素子の抵抗値が低い低抵抗状態へと変化させる際に、前記一対の電極間に、互いに異なる形状の複数回のパルス状電圧を印加する
ことを特徴とする記憶装置の駆動方法。 - 前記高抵抗状態から前記低抵抗状態へと変化させる際に、前記一対の電極間に、互いに異なる形状の2回のパルス状電圧を印加する
ことを特徴とする請求項1に記載の記憶装置の駆動方法。 - 前記2回のパルス状電圧のうち、2回目のパルス状電圧の電圧値のほうが1回目のパルス状電圧の電圧値よりも低くなるように設定する
ことを特徴とする請求項2に記載の記憶装置の駆動方法。 - 前記高抵抗状態から前記低抵抗状態へと変化する際に前記一対の電極間に形成される導電経路の温度が所定の閾値以下まで低下したとき以降に、前記2回目のパルス状電圧がオフとなるように設定する
ことを特徴とする請求項3に記載の記憶装置の駆動方法。 - 前記2回のパルス状電圧のうち、2回目のパルス状電圧の電圧値のほうが1回目のパルス状電圧の電圧値よりも高くなるように設定する
ことを特徴とする請求項2に記載の記憶装置の駆動方法。 - 前記2回目のパルス状電圧のパルス幅のほうが前記1回目のパルス状電圧のパルス幅よりも大きくなるように設定する
ことを特徴とする請求項5に記載の記憶装置の駆動方法。 - 前記可変抵抗素子は、前記一対の電極間に、
絶縁体により構成された記憶層と、
イオン化が容易な金属元素を含む金属含有層と
を有する
ことを特徴とする請求項1に記載の記憶装置の駆動方法。 - 前記金属元素が、銅(Cu),銀(Ag),亜鉛(Zn)のうちの少なくとも1種の元素である
ことを特徴とする請求項7に記載の記憶装置の駆動方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007211733A JP5012312B2 (ja) | 2007-08-15 | 2007-08-15 | 記憶装置の駆動方法 |
US12/671,939 US8446756B2 (en) | 2007-08-15 | 2008-08-12 | Method of stabilizing data hold operations of a storage device |
CN200880102793.0A CN101779248B (zh) | 2007-08-15 | 2008-08-12 | 存储装置的驱动方法 |
EP08827256A EP2180482A1 (en) | 2007-08-15 | 2008-08-12 | Storage device drive method |
KR1020107002781A KR101472925B1 (ko) | 2007-08-15 | 2008-08-12 | 기억 장치의 구동 방법 |
PCT/JP2008/064448 WO2009022693A1 (ja) | 2007-08-15 | 2008-08-12 | 記憶装置の駆動方法 |
TW097130825A TW200917257A (en) | 2007-08-15 | 2008-08-13 | Storage device drive method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007211733A JP5012312B2 (ja) | 2007-08-15 | 2007-08-15 | 記憶装置の駆動方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009048679A JP2009048679A (ja) | 2009-03-05 |
JP5012312B2 true JP5012312B2 (ja) | 2012-08-29 |
Family
ID=40350745
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007211733A Expired - Fee Related JP5012312B2 (ja) | 2007-08-15 | 2007-08-15 | 記憶装置の駆動方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8446756B2 (ja) |
EP (1) | EP2180482A1 (ja) |
JP (1) | JP5012312B2 (ja) |
KR (1) | KR101472925B1 (ja) |
CN (1) | CN101779248B (ja) |
TW (1) | TW200917257A (ja) |
WO (1) | WO2009022693A1 (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
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US8331128B1 (en) | 2008-12-02 | 2012-12-11 | Adesto Technologies Corporation | Reconfigurable memory arrays having programmable impedance elements and corresponding methods |
JP5044617B2 (ja) | 2009-08-31 | 2012-10-10 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP5436125B2 (ja) | 2009-09-30 | 2014-03-05 | 富士フイルム株式会社 | 診断支援装置およびその作動方法並びに診断支援プログラム |
JP4914517B2 (ja) | 2009-10-08 | 2012-04-11 | 富士フイルム株式会社 | 構造物検出装置および方法ならびにプログラム |
KR101652333B1 (ko) * | 2010-02-10 | 2016-08-30 | 삼성전자주식회사 | 가변 저항 메모리 장치 및 그것의 프로그램 방법 |
JP4981938B2 (ja) | 2010-03-08 | 2012-07-25 | 富士フイルム株式会社 | 診断支援装置、冠動脈解析プログラムおよび冠動脈解析方法 |
JP5572470B2 (ja) | 2010-07-28 | 2014-08-13 | 富士フイルム株式会社 | 診断支援装置および方法並びにプログラム |
JP2012075702A (ja) | 2010-10-01 | 2012-04-19 | Fujifilm Corp | 管状構造物内画像再構成装置、管状構造物内画像再構成方法および管状構造物内画像再構成プログラム |
JP5626529B2 (ja) * | 2011-02-08 | 2014-11-19 | ソニー株式会社 | 記憶装置およびその動作方法 |
JP5222380B2 (ja) * | 2011-05-24 | 2013-06-26 | シャープ株式会社 | 可変抵抗素子のフォーミング処理方法および不揮発性半導体記憶装置 |
WO2012172773A1 (ja) * | 2011-06-13 | 2012-12-20 | パナソニック株式会社 | 抵抗変化素子の駆動方法、及び不揮発性記憶装置 |
JP5395868B2 (ja) | 2011-09-26 | 2014-01-22 | 富士フイルム株式会社 | 画像処理装置および方法ならびにプログラム |
US8942024B2 (en) * | 2011-12-06 | 2015-01-27 | Agency For Science, Technology And Research | Circuit arrangement and a method of writing states to a memory cell |
US8730752B1 (en) | 2012-04-02 | 2014-05-20 | Adesto Technologies Corporation | Circuits and methods for placing programmable impedance memory elements in high impedance states |
US10344342B2 (en) * | 2013-12-26 | 2019-07-09 | Kawasaki Jukogyo Kabushiki Kaisha | Method of and apparatus for producing saccharified solution by using biomass as raw material, and continuous reactor |
EP3001424A1 (en) * | 2014-09-26 | 2016-03-30 | Winbond Electronics Corp. | Operation method of resistive random access memory cell |
KR102313601B1 (ko) | 2017-03-24 | 2021-10-15 | 삼성전자주식회사 | 메모리 장치의 동작 방법 |
CN110827897B (zh) * | 2019-09-17 | 2021-10-01 | 华中科技大学 | 忆阻器的防过写电路及方法 |
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JP3749847B2 (ja) * | 2001-09-27 | 2006-03-01 | 株式会社東芝 | 相変化型不揮発性記憶装置及びその駆動回路 |
KR100773537B1 (ko) * | 2003-06-03 | 2007-11-07 | 삼성전자주식회사 | 한 개의 스위칭 소자와 한 개의 저항체를 포함하는비휘발성 메모리 장치 및 그 제조 방법 |
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JP2007294592A (ja) * | 2006-04-24 | 2007-11-08 | Sony Corp | 記憶装置の駆動方法 |
JP2008052867A (ja) | 2006-08-28 | 2008-03-06 | Renesas Technology Corp | 不揮発性半導体記憶装置 |
EP2077580B1 (en) * | 2006-11-17 | 2011-11-30 | Panasonic Corporation | Nonvolatile memory element, nonvolatile memory device, nonvolatile semiconductor device, and method for manufacturing nonvolatile memory element |
-
2007
- 2007-08-15 JP JP2007211733A patent/JP5012312B2/ja not_active Expired - Fee Related
-
2008
- 2008-08-12 KR KR1020107002781A patent/KR101472925B1/ko active IP Right Grant
- 2008-08-12 US US12/671,939 patent/US8446756B2/en active Active
- 2008-08-12 CN CN200880102793.0A patent/CN101779248B/zh not_active Expired - Fee Related
- 2008-08-12 EP EP08827256A patent/EP2180482A1/en not_active Withdrawn
- 2008-08-12 WO PCT/JP2008/064448 patent/WO2009022693A1/ja active Application Filing
- 2008-08-13 TW TW097130825A patent/TW200917257A/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
WO2009022693A1 (ja) | 2009-02-19 |
TW200917257A (en) | 2009-04-16 |
CN101779248B (zh) | 2012-12-26 |
JP2009048679A (ja) | 2009-03-05 |
US20110026298A1 (en) | 2011-02-03 |
US8446756B2 (en) | 2013-05-21 |
CN101779248A (zh) | 2010-07-14 |
KR101472925B1 (ko) | 2014-12-16 |
KR20100057795A (ko) | 2010-06-01 |
EP2180482A1 (en) | 2010-04-28 |
TWI380305B (ja) | 2012-12-21 |
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