KR970009616B1 - Fabricating method of semiconductor device - Google Patents

Fabricating method of semiconductor device Download PDF

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Publication number
KR970009616B1
KR970009616B1 KR93031903A KR930031903A KR970009616B1 KR 970009616 B1 KR970009616 B1 KR 970009616B1 KR 93031903 A KR93031903 A KR 93031903A KR 930031903 A KR930031903 A KR 930031903A KR 970009616 B1 KR970009616 B1 KR 970009616B1
Authority
KR
South Korea
Prior art keywords
film
oxide film
nitride
etched
transition metal
Prior art date
Application number
KR93031903A
Other languages
Korean (ko)
Other versions
KR950021133A (en
Inventor
Sang-Hoon Park
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Priority to KR93031903A priority Critical patent/KR970009616B1/en
Publication of KR950021133A publication Critical patent/KR950021133A/en
Application granted granted Critical
Publication of KR970009616B1 publication Critical patent/KR970009616B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

A gate oxide film(28), a polysilicon(29), a nitride film(30) are deposited in succession on the upper part of the whole structure, then a photoresist film pattern(31) being formed. The first nitride pattern is etched as the same size as that of an upper part of the remaining polysilicon, forming a second nitride pattern(30") and the remaining polysilicon is etched, forming a gate electrode(29"). A low temperature oxide film is deposited on the upper part of the whole structure, then a nitride film(10") and an oxide film being etched at same speed, a transition metal film(33) and thermal oxide film(34) being formed in succession, then thermally processed at high temperature, thereby the transition metal film being transformed into a transition metal oxide film(33'). An oxide film for an interlayer insulation and BPSG film are formed on the upper part of the whole structure.
KR93031903A 1993-12-31 1993-12-31 Fabricating method of semiconductor device KR970009616B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR93031903A KR970009616B1 (en) 1993-12-31 1993-12-31 Fabricating method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR93031903A KR970009616B1 (en) 1993-12-31 1993-12-31 Fabricating method of semiconductor device

Publications (2)

Publication Number Publication Date
KR950021133A KR950021133A (en) 1995-07-26
KR970009616B1 true KR970009616B1 (en) 1997-06-14

Family

ID=19374820

Family Applications (1)

Application Number Title Priority Date Filing Date
KR93031903A KR970009616B1 (en) 1993-12-31 1993-12-31 Fabricating method of semiconductor device

Country Status (1)

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KR (1) KR970009616B1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100773537B1 (en) 2003-06-03 2007-11-07 삼성전자주식회사 Nonvolatile memory device composing one switching device and one resistant material and method of manufacturing the same
KR101051704B1 (en) 2004-04-28 2011-07-25 삼성전자주식회사 Memory device using multilayer with resistive gradient

Also Published As

Publication number Publication date
KR950021133A (en) 1995-07-26

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