JP5062180B2 - 抵抗変化素子及びその製造方法 - Google Patents
抵抗変化素子及びその製造方法 Download PDFInfo
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- JP5062180B2 JP5062180B2 JP2008550007A JP2008550007A JP5062180B2 JP 5062180 B2 JP5062180 B2 JP 5062180B2 JP 2008550007 A JP2008550007 A JP 2008550007A JP 2008550007 A JP2008550007 A JP 2008550007A JP 5062180 B2 JP5062180 B2 JP 5062180B2
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- transition metal
- resistance change
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 43
- 150000003624 transition metals Chemical class 0.000 claims abstract description 43
- 229910000314 transition metal oxide Inorganic materials 0.000 claims abstract description 40
- 229910000510 noble metal Inorganic materials 0.000 claims abstract description 24
- 229910005855 NiOx Inorganic materials 0.000 claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 19
- 238000004544 sputter deposition Methods 0.000 claims description 11
- 150000004706 metal oxides Chemical class 0.000 claims description 7
- 239000011229 interlayer Substances 0.000 description 33
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 31
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 28
- 239000012535 impurity Substances 0.000 description 27
- 238000000034 method Methods 0.000 description 26
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 17
- 239000010936 titanium Substances 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 230000015654 memory Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000002955 isolation Methods 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- -1 for example Substances 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/32—Material having simple binary metal oxide structure
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/50—Resistive cell structure aspects
- G11C2213/55—Structure including two electrodes, a memory active layer and at least two other layers which can be a passive or source or reservoir layer or a less doped memory active layer
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/50—Resistive cell structure aspects
- G11C2213/56—Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/79—Array wherein the access device being a transistor
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
Description
図9は、上述した抵抗変化素子を用いたReRAMの一例を示す断面図である。ここでは、本発明をスタック型ReRAMに適用した例を示している。また、ここでは、メモリセルがn型トランジスタにより構成されているものとする。
図10〜図12は、上述したReRAMの製造方法を工程順に示す断面図である。通常、半導体基板上にはメモリセルと同時に駆動回路(書き込み回路及び読み出し回路等)を構成するn型トランジスタ及びp型トランジスタを形成しているが、ここではそれらの図示は省略している。
Claims (4)
- 抵抗値の変化を利用してデータを記憶する抵抗変化素子において、
貴金属又は貴金属酸化物からなる接地側電極及び正極側電極と、
前記接地側電極に接して形成された遷移金属膜と、
前記遷移金属膜と前記正極側電極との間に形成された遷移金属酸化膜と
により構成されていて、
前記遷移金属酸化膜中の遷移金属と、前記遷移金属膜を構成する遷移金属とが同一種であることを特徴とする抵抗変化素子。 - 前記遷移金属膜がNiからなり、前記遷移金属酸化膜がNiOx(但し、xは任意の正数)からなることを特徴とする請求項1に記載の抵抗変化素子。
- 前記遷移金属膜の厚さが5nm以上、20nm以下であり、かつ前記遷移金属酸化膜の厚さが5nm以上、65nm以下であることを特徴とする請求項1に記載の抵抗変化素子。
- 半導体基板の上方に貴金属又は貴金属酸化物からなる第1の貴金属膜を形成する工程と、
前記第1の貴金属膜の上に遷移金属膜を形成する工程と、
前記遷移金属膜の上にスパッタ法により遷移金属酸化膜を形成する工程と、
前記遷移金属酸化膜の上に貴金属又は貴金属酸化物からなる第2の貴金属膜を形成する工程と
を有し、
前記遷移金属酸化膜中の遷移金属と、前記遷移金属膜を構成する遷移金属とを同一種とすることを特徴とする抵抗変化素子の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2006/325297 WO2008075413A1 (ja) | 2006-12-19 | 2006-12-19 | 抵抗変化素子及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2008075413A1 JPWO2008075413A1 (ja) | 2010-04-02 |
JP5062180B2 true JP5062180B2 (ja) | 2012-10-31 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2008550007A Expired - Fee Related JP5062180B2 (ja) | 2006-12-19 | 2006-12-19 | 抵抗変化素子及びその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8106377B2 (ja) |
EP (1) | EP2099071B1 (ja) |
JP (1) | JP5062180B2 (ja) |
KR (1) | KR101187374B1 (ja) |
WO (1) | WO2008075413A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101176422B1 (ko) | 2009-06-23 | 2012-08-30 | 광주과학기술원 | 비휘발성 저항 변화 메모리 소자 |
KR101474812B1 (ko) | 2010-09-27 | 2014-12-19 | 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. | 긴 내구성의 멤리스터들을 위한 디바이스 구조 |
US20120104346A1 (en) * | 2010-10-29 | 2012-05-03 | Wei Yi | Semiconductor device for providing heat management |
US8791445B2 (en) | 2012-03-01 | 2014-07-29 | Intermolecular, Inc. | Interfacial oxide used as switching layer in a nonvolatile resistive memory element |
TWI484490B (zh) * | 2012-11-14 | 2015-05-11 | Univ Nat Chiao Tung | 電阻式記憶體裝置及其操作方法 |
US9112148B2 (en) | 2013-09-30 | 2015-08-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | RRAM cell structure with laterally offset BEVA/TEVA |
US9425308B2 (en) * | 2013-12-31 | 2016-08-23 | Delta Electronics, Inc. | Power semiconductor device and method for fabricating the same |
KR20160130468A (ko) | 2014-03-07 | 2016-11-11 | 휴렛 팩커드 엔터프라이즈 디벨롭먼트 엘피 | 열 절연성 클래딩을 갖는 멤리스터 디바이스 |
US9178144B1 (en) | 2014-04-14 | 2015-11-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | RRAM cell with bottom electrode |
US9209392B1 (en) | 2014-10-14 | 2015-12-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | RRAM cell with bottom electrode |
US10381561B2 (en) | 2018-01-10 | 2019-08-13 | Internatoinal Business Machines Corporation | Dedicated contacts for controlled electroforming of memory cells in resistive random-access memory array |
Citations (2)
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JP2005175457A (ja) * | 2003-12-08 | 2005-06-30 | Sharp Corp | Rramメモリセル電極 |
JP2005203389A (ja) * | 2004-01-13 | 2005-07-28 | Sharp Corp | 不揮発性半導体記憶装置の製造方法 |
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US7242469B2 (en) | 2003-05-27 | 2007-07-10 | Opto Trace Technologies, Inc. | Applications of Raman scattering probes |
KR100773537B1 (ko) * | 2003-06-03 | 2007-11-07 | 삼성전자주식회사 | 한 개의 스위칭 소자와 한 개의 저항체를 포함하는비휘발성 메모리 장치 및 그 제조 방법 |
DE10342026A1 (de) | 2003-09-11 | 2005-04-28 | Infineon Technologies Ag | Speicherzelle mit Ionenleitungsspeichermechanismus und Verfahren zu deren Herstellung |
US7402456B2 (en) * | 2004-04-23 | 2008-07-22 | Sharp Laboratories Of America, Inc. | PCMO thin film with memory resistance properties |
KR100657911B1 (ko) | 2004-11-10 | 2006-12-14 | 삼성전자주식회사 | 한 개의 저항체와 한 개의 다이오드를 지닌 비휘발성메모리 소자 |
JP5049483B2 (ja) * | 2005-04-22 | 2012-10-17 | パナソニック株式会社 | 電気素子,メモリ装置,および半導体集積回路 |
CN101167138B (zh) | 2005-04-22 | 2010-09-22 | 松下电器产业株式会社 | 电子元件、存储装置及半导体集成电路 |
JP4575837B2 (ja) * | 2005-05-19 | 2010-11-04 | シャープ株式会社 | 不揮発性記憶素子及びその製造方法 |
US20070048990A1 (en) * | 2005-08-30 | 2007-03-01 | Sharp Laboratories Of America, Inc. | Method of buffer layer formation for RRAM thin film deposition |
CN101622729A (zh) * | 2006-08-31 | 2010-01-06 | 校际微电子中心 | 用于制造电阻转换器件的方法和由此获得的器件 |
-
2006
- 2006-12-19 KR KR1020097012525A patent/KR101187374B1/ko not_active IP Right Cessation
- 2006-12-19 JP JP2008550007A patent/JP5062180B2/ja not_active Expired - Fee Related
- 2006-12-19 WO PCT/JP2006/325297 patent/WO2008075413A1/ja active Application Filing
- 2006-12-19 EP EP06842901A patent/EP2099071B1/en not_active Not-in-force
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2009
- 2009-06-18 US US12/519,913 patent/US8106377B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005175457A (ja) * | 2003-12-08 | 2005-06-30 | Sharp Corp | Rramメモリセル電極 |
JP2005203389A (ja) * | 2004-01-13 | 2005-07-28 | Sharp Corp | 不揮発性半導体記憶装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20090090345A (ko) | 2009-08-25 |
EP2099071A1 (en) | 2009-09-09 |
WO2008075413A1 (ja) | 2008-06-26 |
KR101187374B1 (ko) | 2012-10-02 |
US20100252796A1 (en) | 2010-10-07 |
EP2099071A4 (en) | 2011-01-19 |
US8106377B2 (en) | 2012-01-31 |
JPWO2008075413A1 (ja) | 2010-04-02 |
EP2099071B1 (en) | 2012-08-22 |
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