DE60137788D1 - Architektur einer nichtflüchtigen Phasenwechsel -Speichermatrix - Google Patents

Architektur einer nichtflüchtigen Phasenwechsel -Speichermatrix

Info

Publication number
DE60137788D1
DE60137788D1 DE60137788T DE60137788T DE60137788D1 DE 60137788 D1 DE60137788 D1 DE 60137788D1 DE 60137788 T DE60137788 T DE 60137788T DE 60137788 T DE60137788 T DE 60137788T DE 60137788 D1 DE60137788 D1 DE 60137788D1
Authority
DE
Germany
Prior art keywords
architecture
phase change
change memory
memory matrix
volatile phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60137788T
Other languages
English (en)
Inventor
Osama Khouri
Ferdinando Bedeschi
Giorgio Bosisio
Fabio Pellizzer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE60137788D1 publication Critical patent/DE60137788D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
DE60137788T 2001-12-27 2001-12-27 Architektur einer nichtflüchtigen Phasenwechsel -Speichermatrix Expired - Lifetime DE60137788D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP01830806A EP1326254B1 (de) 2001-12-27 2001-12-27 Architektur einer nichtflüchtigen Phasenwechsel -Speichermatrix

Publications (1)

Publication Number Publication Date
DE60137788D1 true DE60137788D1 (de) 2009-04-09

Family

ID=8184837

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60137788T Expired - Lifetime DE60137788D1 (de) 2001-12-27 2001-12-27 Architektur einer nichtflüchtigen Phasenwechsel -Speichermatrix

Country Status (3)

Country Link
US (1) US6816404B2 (de)
EP (1) EP1326254B1 (de)
DE (1) DE60137788D1 (de)

Families Citing this family (66)

* Cited by examiner, † Cited by third party
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DE60227534D1 (de) * 2002-11-18 2008-08-21 St Microelectronics Srl Schaltung und Anordnung zur Tempeaturüberwachung von chalcogenische Elementen, insbesondere von Phasenänderungsspeicherelementen
US6912146B2 (en) 2002-12-13 2005-06-28 Ovonyx, Inc. Using an MOS select gate for a phase change memory
US7085155B2 (en) * 2003-03-10 2006-08-01 Energy Conversion Devices, Inc. Secured phase-change devices
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JP4634014B2 (ja) * 2003-05-22 2011-02-16 株式会社日立製作所 半導体記憶装置
KR100773537B1 (ko) * 2003-06-03 2007-11-07 삼성전자주식회사 한 개의 스위칭 소자와 한 개의 저항체를 포함하는비휘발성 메모리 장치 및 그 제조 방법
US7499315B2 (en) * 2003-06-11 2009-03-03 Ovonyx, Inc. Programmable matrix array with chalcogenide material
US7180767B2 (en) * 2003-06-18 2007-02-20 Macronix International Co., Ltd. Multi-level memory device and methods for programming and reading the same
US6914255B2 (en) * 2003-08-04 2005-07-05 Ovonyx, Inc. Phase change access device for memories
DE60310915D1 (de) * 2003-08-05 2007-02-15 St Microelectronics Srl Verfahren zur Herstellung einer Anordnung von Phasenwechselspeichern in Kupfer-Damaszenertechnologie sowie entsprechend hergestellte Anordnungen von Phasenwechselspeichern
EP1511042B1 (de) 2003-08-27 2012-12-05 STMicroelectronics Srl Phasenübergangsspeicheranordnung mit Vorspannung von nicht-selektierten Bit-Leitungen
JP2005150243A (ja) * 2003-11-12 2005-06-09 Toshiba Corp 相転移メモリ
JP4124743B2 (ja) * 2004-01-21 2008-07-23 株式会社ルネサステクノロジ 相変化メモリ
JP5281746B2 (ja) * 2004-05-14 2013-09-04 ルネサスエレクトロニクス株式会社 半導体記憶装置
US7009694B2 (en) * 2004-05-28 2006-03-07 International Business Machines Corporation Indirect switching and sensing of phase change memory cells
EP1766678A1 (de) * 2004-06-30 2007-03-28 Koninklijke Philips Electronics N.V. Verfahren zur herstellung eines elektrischen bauelements mit einer schicht durch nanodraht kontaktiertem leitfähigen metall
US7687830B2 (en) 2004-09-17 2010-03-30 Ovonyx, Inc. Phase change memory with ovonic threshold switch
DE102004047638B4 (de) * 2004-09-30 2011-12-01 Qimonda Ag Nichtflüchtige Speicherzelle
ATE488842T1 (de) 2004-09-30 2010-12-15 Nxp Bv Integrierte schaltung mit speicherzellen mit einem programmierbaren widerstand und verfahren zum adressieren von speicherzellen mit einem programmierbaren widerstand
US7338857B2 (en) 2004-10-14 2008-03-04 Ovonyx, Inc. Increasing adherence of dielectrics to phase change materials
DE102004051152B4 (de) 2004-10-20 2007-12-20 Qimonda Ag NOR-Speicheranordnung von resistiven Speicherelementen
KR100564637B1 (ko) 2004-10-26 2006-03-29 삼성전자주식회사 반도체 메모리 장치와 그 프로그래밍 방법
US7272037B2 (en) * 2004-10-29 2007-09-18 Macronix International Co., Ltd. Method for programming a multilevel phase change memory device
US20060097341A1 (en) * 2004-11-05 2006-05-11 Fabio Pellizzer Forming phase change memory cell with microtrenches
US7646630B2 (en) * 2004-11-08 2010-01-12 Ovonyx, Inc. Programmable matrix array with chalcogenide material
JP4524455B2 (ja) * 2004-11-26 2010-08-18 ルネサスエレクトロニクス株式会社 半導体装置
US7391642B2 (en) * 2005-01-25 2008-06-24 Intel Corporation Multilevel programming of phase change memory cells
DE102005004434A1 (de) * 2005-01-31 2006-08-10 Infineon Technologies Ag Verfahren und Vorrichtung zur Ansteuerung von Festkörper-Elektrolytzellen
JP4591821B2 (ja) * 2005-02-09 2010-12-01 エルピーダメモリ株式会社 半導体装置
KR100688540B1 (ko) 2005-03-24 2007-03-02 삼성전자주식회사 메모리 셀의 집적도를 향상시킨 반도체 메모리 장치
EP1708202A3 (de) * 2005-03-24 2007-02-14 Samsung Electronics Co., Ltd. Phasenänderungsspeicher
US7408240B2 (en) * 2005-05-02 2008-08-05 Infineon Technologies Ag Memory device
US8008644B2 (en) * 2005-05-19 2011-08-30 Nxp B.V. Phase-change memory cell having two insulated regions
ATE410774T1 (de) * 2005-05-19 2008-10-15 Koninkl Philips Electronics Nv Verfahren zum regeln des zuerst schmelzenden bereiches einer pcm-zelle und damit hergestellte vorrichtungen
EP2309516A1 (de) * 2005-06-03 2011-04-13 STMicroelectronics Srl Verfahren zum Programmieren von Phasenübergangsspeicherzellen mit mehrfachen Speicherniveaus mithilfe eines Perkolationsalgorithmus
KR100642645B1 (ko) * 2005-07-01 2006-11-10 삼성전자주식회사 고집적 셀 구조를 갖는 메모리 소자 및 그 제조방법
US20070045606A1 (en) * 2005-08-30 2007-03-01 Michele Magistretti Shaping a phase change layer in a phase change memory cell
US7606056B2 (en) 2005-12-22 2009-10-20 Stmicroelectronics S.R.L. Process for manufacturing a phase change memory array in Cu-damascene technology and phase change memory array thereby manufactured
TWI597724B (zh) * 2005-12-24 2017-09-01 奧佛尼克公司 具硫屬化物材料之可程式化矩陣陣列
EP1811564B1 (de) * 2006-01-20 2010-03-10 STMicroelectronics S.r.l. Elektrische Sicherungsstruktur auf der Basis eines Phasenwechselspeicherelements und entsprechendes Programmierverfahren
US7714315B2 (en) * 2006-02-07 2010-05-11 Qimonda North America Corp. Thermal isolation of phase change memory cells
US7324365B2 (en) * 2006-03-02 2008-01-29 Infineon Technologies Ag Phase change memory fabricated using self-aligned processing
US20070267618A1 (en) * 2006-05-17 2007-11-22 Shoaib Zaidi Memory device
DE602006012825D1 (de) 2006-07-27 2010-04-22 St Microelectronics Srl Phasenwechsel-Speichervorrichtung
JP2008192686A (ja) * 2007-02-01 2008-08-21 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US7705424B2 (en) * 2007-05-15 2010-04-27 Taiwan Semiconductor Manufacturing Company, Ltd. Phase change memory
US7977661B2 (en) * 2007-06-07 2011-07-12 Qimonda Ag Memory having shared storage material
US7663134B2 (en) * 2007-07-10 2010-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Memory array with a selector connected to multiple resistive cells
KR101384357B1 (ko) 2007-11-20 2014-04-15 삼성전자주식회사 상 변화 메모리 장치 및 이의 비트라인 디스차지 방법
US8120951B2 (en) * 2008-05-22 2012-02-21 Micron Technology, Inc. Memory devices, memory device constructions, constructions, memory device forming methods, current conducting devices, and memory cell programming methods
IT1391864B1 (it) * 2008-09-30 2012-01-27 St Microelectronics Rousset Cella di memoria resistiva e metodo per la fabbricazione di una cella di memoria resistiva
US7885101B2 (en) * 2008-12-29 2011-02-08 Numonyx B.V. Method for low-stress multilevel reading of phase change memory cells and multilevel phase change memory
IT1392578B1 (it) * 2008-12-30 2012-03-09 St Microelectronics Rousset Metodo di programmazione multilivello di celle di memoria a cambiamento di fase utilizzante impulsi di reset adattativi
US8891280B2 (en) 2012-10-12 2014-11-18 Micron Technology, Inc. Interconnection for memory electrodes
US9025398B2 (en) 2012-10-12 2015-05-05 Micron Technology, Inc. Metallization scheme for integrated circuit
US9190144B2 (en) 2012-10-12 2015-11-17 Micron Technology, Inc. Memory device architecture
US9224635B2 (en) 2013-02-26 2015-12-29 Micron Technology, Inc. Connections for memory electrode lines
US9286160B2 (en) 2014-02-07 2016-03-15 Stmicroelectronics S.R.L. System and method for phase change memory with erase flag cells
US10074693B2 (en) 2015-03-03 2018-09-11 Micron Technology, Inc Connections for memory electrode lines
CN104978988B (zh) 2015-05-22 2017-08-25 江苏时代全芯存储科技有限公司 记忆体装置
FR3073319A1 (fr) * 2017-11-09 2019-05-10 Stmicroelectronics (Grenoble 2) Sas Puce a memoire non volatile embarquee a materiau a changement de phase
US10381101B2 (en) * 2017-12-20 2019-08-13 Micron Technology, Inc. Non-contact measurement of memory cell threshold voltage
US10403359B2 (en) 2017-12-20 2019-09-03 Micron Technology, Inc. Non-contact electron beam probing techniques and related structures

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US4876668A (en) * 1985-07-31 1989-10-24 California Institute Of Technology Thin film memory matrix using amorphous and high resistive layers
US5898619A (en) * 1993-03-01 1999-04-27 Chang; Ko-Min Memory cell having a plural transistor transmission gate and method of formation
JP2783271B2 (ja) * 1995-01-30 1998-08-06 日本電気株式会社 半導体記憶装置
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US6576921B2 (en) * 2001-11-08 2003-06-10 Intel Corporation Isolating phase change material memory cells

Also Published As

Publication number Publication date
US20030185047A1 (en) 2003-10-02
EP1326254B1 (de) 2009-02-25
EP1326254A1 (de) 2003-07-09
US6816404B2 (en) 2004-11-09

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