DE60227534D1 - Schaltung und Anordnung zur Tempeaturüberwachung von chalcogenische Elementen, insbesondere von Phasenänderungsspeicherelementen - Google Patents
Schaltung und Anordnung zur Tempeaturüberwachung von chalcogenische Elementen, insbesondere von PhasenänderungsspeicherelementenInfo
- Publication number
- DE60227534D1 DE60227534D1 DE60227534T DE60227534T DE60227534D1 DE 60227534 D1 DE60227534 D1 DE 60227534D1 DE 60227534 T DE60227534 T DE 60227534T DE 60227534 T DE60227534 T DE 60227534T DE 60227534 D1 DE60227534 D1 DE 60227534D1
- Authority
- DE
- Germany
- Prior art keywords
- elements
- tempeaturüberwachung
- arrangement
- circuit
- phase change
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/0078—Write using current through the cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/009—Write using potential difference applied between cell electrodes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C2029/5002—Characteristic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/79—Array wherein the access device being a transistor
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02425706A EP1420412B1 (de) | 2002-11-18 | 2002-11-18 | Schaltung und Anordnung zur Tempeaturüberwachung von chalcogenische Elementen, insbesondere von Phasenänderungsspeicherelementen |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60227534D1 true DE60227534D1 (de) | 2008-08-21 |
Family
ID=32116371
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60227534T Expired - Lifetime DE60227534D1 (de) | 2002-11-18 | 2002-11-18 | Schaltung und Anordnung zur Tempeaturüberwachung von chalcogenische Elementen, insbesondere von Phasenänderungsspeicherelementen |
Country Status (3)
Country | Link |
---|---|
US (1) | US7020014B2 (de) |
EP (1) | EP1420412B1 (de) |
DE (1) | DE60227534D1 (de) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6868025B2 (en) * | 2003-03-10 | 2005-03-15 | Sharp Laboratories Of America, Inc. | Temperature compensated RRAM circuit |
DE102004039977B4 (de) * | 2003-08-13 | 2008-09-11 | Samsung Electronics Co., Ltd., Suwon | Programmierverfahren und Treiberschaltung für eine Phasenwechselspeicherzelle |
KR100505701B1 (ko) * | 2003-08-13 | 2005-08-03 | 삼성전자주식회사 | 상 변화 메모리의 셋(set) 시간을 최소화하는프로그래밍 방법 및 프로그래밍 방법을 구현하는 기입드라이버 회로 |
JP4529493B2 (ja) * | 2004-03-12 | 2010-08-25 | 株式会社日立製作所 | 半導体装置 |
KR100618824B1 (ko) * | 2004-05-08 | 2006-08-31 | 삼성전자주식회사 | 상 변화 메모리 장치의 전류 펄스 폭을 제어하는 구동회로 및 프로그래밍 방법 |
DE102004040753A1 (de) * | 2004-08-23 | 2006-03-09 | Infineon Technologies Ag | Schaltungsanordnungen zum Speichern von Informationen in Speicherelementen vom CBRAM-Typ |
US7443710B2 (en) * | 2004-09-28 | 2008-10-28 | Spansion, Llc | Control of memory devices possessing variable resistance characteristics |
US7646630B2 (en) * | 2004-11-08 | 2010-01-12 | Ovonyx, Inc. | Programmable matrix array with chalcogenide material |
DE102005001668A1 (de) * | 2005-01-13 | 2006-03-16 | Infineon Technologies Ag | Speicherschaltung mit einer Phasenwechsel-Speicherzelle |
US7319608B2 (en) * | 2005-06-30 | 2008-01-15 | International Business Machines Corporation | Non-volatile content addressable memory using phase-change-material memory elements |
US7907435B2 (en) | 2005-09-21 | 2011-03-15 | Renesas Electronics Corporation | Semiconductor device |
US7460394B2 (en) * | 2006-05-18 | 2008-12-02 | Infineon Technologies Ag | Phase change memory having temperature budget sensor |
US7414883B2 (en) * | 2006-04-20 | 2008-08-19 | Intel Corporation | Programming a normally single phase chalcogenide material for use as a memory or FPLA |
US7405964B2 (en) * | 2006-07-27 | 2008-07-29 | Qimonda North America Corp. | Integrated circuit to identify read disturb condition in memory cell |
US7471582B2 (en) * | 2006-07-28 | 2008-12-30 | Freescale Semiconductor, Inc. | Memory circuit using a reference for sensing |
US7623401B2 (en) | 2006-10-06 | 2009-11-24 | Qimonda North America Corp. | Semiconductor device including multi-bit memory cells and a temperature budget sensor |
JP2008103841A (ja) * | 2006-10-17 | 2008-05-01 | Matsushita Electric Ind Co Ltd | 水晶発振回路 |
US7679980B2 (en) | 2006-11-21 | 2010-03-16 | Qimonda North America Corp. | Resistive memory including selective refresh operation |
US7539050B2 (en) | 2006-11-22 | 2009-05-26 | Qimonda North America Corp. | Resistive memory including refresh operation |
KR100809339B1 (ko) * | 2006-12-20 | 2008-03-05 | 삼성전자주식회사 | 저항체를 이용한 비휘발성 메모리 장치 및 그 구동 방법 |
US7916524B2 (en) * | 2007-06-26 | 2011-03-29 | Qimonda Ag | Program method with locally optimized write parameters |
US7795605B2 (en) * | 2007-06-29 | 2010-09-14 | International Business Machines Corporation | Phase change material based temperature sensor |
KR100908814B1 (ko) * | 2007-08-29 | 2009-07-21 | 주식회사 하이닉스반도체 | 코어전압 방전회로 및 이를 포함하는 반도체 메모리장치 |
TWI367485B (en) * | 2007-09-21 | 2012-07-01 | Higgs Opl Capital Llc | Device controlling phase change storage element and method of increasing reliability of phase change storage element |
JP5205662B2 (ja) * | 2008-04-01 | 2013-06-05 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US7882455B2 (en) * | 2008-05-09 | 2011-02-01 | International Business Machines Corporation | Circuit and method using distributed phase change elements for across-chip temperature profiling |
US7929336B2 (en) * | 2008-06-11 | 2011-04-19 | Qimonda Ag | Integrated circuit including a memory element programmed using a seed pulse |
JP5259270B2 (ja) * | 2008-06-27 | 2013-08-07 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
KR101435128B1 (ko) * | 2008-07-21 | 2014-09-01 | 삼성전자 주식회사 | 저항체를 이용한 비휘발성 메모리 장치 |
US8036014B2 (en) * | 2008-11-06 | 2011-10-11 | Macronix International Co., Ltd. | Phase change memory program method without over-reset |
KR101543434B1 (ko) * | 2008-12-15 | 2015-08-10 | 삼성전자주식회사 | 반도체 메모리 시스템의 제조 방법 |
US8259488B1 (en) * | 2009-05-11 | 2012-09-04 | Micron Technology, Inc. | Phase-change memory temperature sensitive detector |
KR20100132374A (ko) * | 2009-06-09 | 2010-12-17 | 삼성전자주식회사 | Pvt 변화에 무관한 전류 공급회로, 및 이를 포함하는 반도체 장치들 |
WO2011070599A1 (en) | 2009-12-10 | 2011-06-16 | Ferdinando Bedeschi | Apparatus and method for reading a phase-change memory cell |
WO2012046638A1 (en) | 2010-10-04 | 2012-04-12 | Ricoh Company, Ltd. | Electric element |
KR101212747B1 (ko) | 2010-10-28 | 2012-12-14 | 에스케이하이닉스 주식회사 | 커런트 제어 장치 및 이를 포함하는 상변화 메모리 |
KR20120045197A (ko) * | 2010-10-29 | 2012-05-09 | 에스케이하이닉스 주식회사 | 온도에 의존하는 저장 매체를 포함하는 메모리 장치 및 그 구동방법 |
US9036396B2 (en) * | 2012-08-30 | 2015-05-19 | SanDisk Technologies, Inc. | Apparatus and method for detecting reflow process |
US9625325B2 (en) | 2015-02-18 | 2017-04-18 | Globalfoundries Inc. | System and method for identifying operating temperatures and modifying of integrated circuits |
EP3281202A4 (de) * | 2015-04-10 | 2018-03-28 | Hewlett-Packard Enterprise Development LP | Temperaturausgleichsschaltungen |
ITUB20153221A1 (it) * | 2015-08-25 | 2017-02-25 | St Microelectronics Srl | Circuito e metodo di polarizzazione di celle di memoria non volatile |
US9400511B1 (en) * | 2016-01-07 | 2016-07-26 | International Business Machines Corporation | Methods and control systems of resistance adjustment of resistors |
US9785178B1 (en) * | 2016-03-17 | 2017-10-10 | King Abdulaziz City For Science And Technology | Precision current reference generator circuit |
US10366752B2 (en) * | 2016-12-11 | 2019-07-30 | Technion Research & Development Foundation Ltd. | Programming for electronic memories |
US11940831B2 (en) * | 2021-12-07 | 2024-03-26 | Infineon Technologies LLC | Current generator for memory sensing |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SU522523A1 (ru) * | 1974-10-18 | 1976-07-25 | Предприятие П/Я М-5769 | Запоминающее устройство |
US6233190B1 (en) * | 1999-08-30 | 2001-05-15 | Micron Technology, Inc. | Method of storing a temperature threshold in an integrated circuit, method of modifying operation of dynamic random access memory in response to temperature, programmable temperature sensing circuit and memory integrated circuit |
JP4491870B2 (ja) * | 1999-10-27 | 2010-06-30 | ソニー株式会社 | 不揮発性メモリの駆動方法 |
EP1115120A3 (de) * | 2000-01-07 | 2003-09-10 | Lucent Technologies Inc. | Verfahren und Vorrichtung zur Temperaturkompensation eines Festwertspeichers |
DE60137788D1 (de) * | 2001-12-27 | 2009-04-09 | St Microelectronics Srl | Architektur einer nichtflüchtigen Phasenwechsel -Speichermatrix |
-
2002
- 2002-11-18 EP EP02425706A patent/EP1420412B1/de not_active Expired - Lifetime
- 2002-11-18 DE DE60227534T patent/DE60227534D1/de not_active Expired - Lifetime
-
2003
- 2003-11-18 US US10/715,883 patent/US7020014B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US7020014B2 (en) | 2006-03-28 |
US20040151023A1 (en) | 2004-08-05 |
EP1420412A1 (de) | 2004-05-19 |
EP1420412B1 (de) | 2008-07-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |