ITMI20040596A1 - Memoria a cambiamento di fase e procedimento avente funzione di ripristino - Google Patents

Memoria a cambiamento di fase e procedimento avente funzione di ripristino

Info

Publication number
ITMI20040596A1
ITMI20040596A1 IT000596A ITMI20040596A ITMI20040596A1 IT MI20040596 A1 ITMI20040596 A1 IT MI20040596A1 IT 000596 A IT000596 A IT 000596A IT MI20040596 A ITMI20040596 A IT MI20040596A IT MI20040596 A1 ITMI20040596 A1 IT MI20040596A1
Authority
IT
Italy
Prior art keywords
procedure
phase change
change memory
reset function
reset
Prior art date
Application number
IT000596A
Other languages
English (en)
Inventor
Su-Jin Ahn
Young-Nam Hwang
Ki-Nam Kim
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of ITMI20040596A1 publication Critical patent/ITMI20040596A1/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0033—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0042—Read using differential sensing, e.g. bit line [BL] and bit line bar [BLB]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0078—Write using current through the cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor
IT000596A 2003-03-27 2004-03-26 Memoria a cambiamento di fase e procedimento avente funzione di ripristino ITMI20040596A1 (it)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020030019257A KR100546322B1 (ko) 2003-03-27 2003-03-27 비휘발성 메모리와 휘발성 메모리로 선택적으로 동작할 수있는 상 변화 메모리 장치 및 상 변화 메모리 장치의 동작방법
US10/788,407 US7042760B2 (en) 2003-03-27 2004-03-01 Phase-change memory and method having restore function

Publications (1)

Publication Number Publication Date
ITMI20040596A1 true ITMI20040596A1 (it) 2004-06-26

Family

ID=34617179

Family Applications (1)

Application Number Title Priority Date Filing Date
IT000596A ITMI20040596A1 (it) 2003-03-27 2004-03-26 Memoria a cambiamento di fase e procedimento avente funzione di ripristino

Country Status (3)

Country Link
US (1) US7042760B2 (it)
KR (1) KR100546322B1 (it)
IT (1) ITMI20040596A1 (it)

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US7085154B2 (en) * 2003-06-03 2006-08-01 Samsung Electronics Co., Ltd. Device and method for pulse width control in a phase change memory device
KR100610008B1 (ko) * 2004-07-19 2006-08-08 삼성전자주식회사 버스트 리드동작에 적합한 상변화 메모리 장치 및 그에따른 데이터 리딩방법
US7423897B2 (en) * 2004-10-01 2008-09-09 Ovonyx, Inc. Method of operating a programmable resistance memory array
US7327602B2 (en) * 2004-10-07 2008-02-05 Ovonyx, Inc. Methods of accelerated life testing of programmable resistance memory elements
CN101044577B (zh) * 2004-10-21 2011-06-15 Nxp股份有限公司 具有相变存储单元的集成电路和对相变存储单元寻址的方法
KR100571844B1 (ko) * 2004-10-28 2006-04-17 삼성전자주식회사 상전이 메모리 소자 및 그 동작 방법
US7460389B2 (en) * 2005-07-29 2008-12-02 International Business Machines Corporation Write operations for phase-change-material memory
US7372725B2 (en) * 2005-08-15 2008-05-13 Infineon Technologies Ag Integrated circuit having resistive memory
US7679950B2 (en) * 2005-08-24 2010-03-16 Infineon Technologies Ag Integrated circuit having a switch
US7548448B2 (en) * 2005-08-24 2009-06-16 Infineon Technologies Ag Integrated circuit having a switch
US7292466B2 (en) * 2006-01-03 2007-11-06 Infineon Technologies Ag Integrated circuit having a resistive memory
US7423901B2 (en) * 2006-03-03 2008-09-09 Marvell World Trade, Ltd. Calibration system for writing and reading multiple states into phase change memory
US7447053B2 (en) * 2006-03-07 2008-11-04 Infineon Technologies Ag Memory device and method for operating such a memory device
KR100764738B1 (ko) * 2006-04-06 2007-10-09 삼성전자주식회사 향상된 신뢰성을 갖는 상변화 메모리 장치, 그것의 쓰기방법, 그리고 그것을 포함한 시스템
US8134866B2 (en) * 2006-04-06 2012-03-13 Samsung Electronics Co., Ltd. Phase change memory devices and systems, and related programming methods
US7626858B2 (en) * 2006-06-09 2009-12-01 Qimonda North America Corp. Integrated circuit having a precharging circuit
US7457146B2 (en) * 2006-06-19 2008-11-25 Qimonda North America Corp. Memory cell programmed using a temperature controlled set pulse
KR100810614B1 (ko) * 2006-08-23 2008-03-06 삼성전자주식회사 디램 셀 모드 및 비휘발성 메모리 셀 모드를 갖는 반도체메모리 소자 및 그 동작방법
KR100843142B1 (ko) 2006-09-19 2008-07-02 삼성전자주식회사 반도체 메모리 장치 및 이를 포함하는 메모리 시스템
US7619917B2 (en) * 2006-11-28 2009-11-17 Qimonda North America Corp. Memory cell with trigger element
US7859036B2 (en) 2007-04-05 2010-12-28 Micron Technology, Inc. Memory devices having electrodes comprising nanowires, systems including same and methods of forming same
US7577023B2 (en) * 2007-05-04 2009-08-18 Qimonda North America Corp. Memory including write circuit for providing multiple reset pulses
US7571901B2 (en) * 2007-06-21 2009-08-11 Qimonda North America Corp. Circuit for programming a memory element
US7864565B2 (en) * 2007-07-31 2011-01-04 Infineon Technologies Ag Data retention monitor
KR20090086816A (ko) * 2008-02-11 2009-08-14 삼성전자주식회사 상변화 메모리 장치, 그것의 기록 방법, 그리고 그것을포함하는 시스템
KR100895398B1 (ko) * 2007-11-30 2009-05-06 주식회사 하이닉스반도체 상 변화 메모리 장치
KR100895397B1 (ko) * 2007-11-30 2009-05-06 주식회사 하이닉스반도체 상 변화 메모리 장치
KR100895399B1 (ko) * 2007-11-30 2009-05-06 주식회사 하이닉스반도체 상 변화 메모리 장치
US7593255B2 (en) 2007-12-07 2009-09-22 Qimonda North America Corp. Integrated circuit for programming a memory element
US20090161417A1 (en) * 2007-12-21 2009-06-25 Richard Fackenthal Two cell per bit phase change memory
US7679951B2 (en) * 2007-12-21 2010-03-16 Palo Alto Research Center Incorporated Charge mapping memory array formed of materials with mutable electrical characteristics
US7660152B2 (en) * 2008-04-30 2010-02-09 International Business Machines Corporation Method and apparatus for implementing self-referencing read operation for PCRAM devices
US8134857B2 (en) * 2008-06-27 2012-03-13 Macronix International Co., Ltd. Methods for high speed reading operation of phase change memory and device employing same
US8809829B2 (en) 2009-06-15 2014-08-19 Macronix International Co., Ltd. Phase change memory having stabilized microstructure and manufacturing method
US7894254B2 (en) 2009-07-15 2011-02-22 Macronix International Co., Ltd. Refresh circuitry for phase change memory
US8520425B2 (en) * 2010-06-18 2013-08-27 Sandisk 3D Llc Resistive random access memory with low current operation
US8520424B2 (en) 2010-06-18 2013-08-27 Sandisk 3D Llc Composition of memory cell with resistance-switching layers
US9195585B2 (en) 2013-01-23 2015-11-24 Vmware, Inc. Techniques for allocating and surfacing host-side storage capacity to virtual machines
WO2014192153A1 (ja) * 2013-05-31 2014-12-04 株式会社日立製作所 半導体装置
US10056140B2 (en) 2014-01-30 2018-08-21 Hewlett Packard Enterprise Development Lp Memristor memory with volatile and non-volatile states
US9672906B2 (en) 2015-06-19 2017-06-06 Macronix International Co., Ltd. Phase change memory with inter-granular switching
IT201900021606A1 (it) 2019-11-19 2021-05-19 St Microelectronics Srl Dispositivo di memoria a cambiamento di fase e metodo di programmazione di un dispositivo di memoria a cambiamento di fase
CN113268860B (zh) * 2021-04-26 2023-10-31 中国科学院上海微系统与信息技术研究所 一种相变存储器件仿真模型

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US6075719A (en) * 1999-06-22 2000-06-13 Energy Conversion Devices, Inc. Method of programming phase-change memory element
US6570784B2 (en) * 2001-06-29 2003-05-27 Ovonyx, Inc. Programming a phase-change material memory
US6487113B1 (en) * 2001-06-29 2002-11-26 Ovonyx, Inc. Programming a phase-change memory with slow quench time
US6545907B1 (en) * 2001-10-30 2003-04-08 Ovonyx, Inc. Technique and apparatus for performing write operations to a phase change material memory device
US6831856B2 (en) * 2002-09-23 2004-12-14 Ovonyx, Inc. Method of data storage using only amorphous phase of electrically programmable phase-change memory element

Also Published As

Publication number Publication date
KR20040084288A (ko) 2004-10-06
US7042760B2 (en) 2006-05-09
KR100546322B1 (ko) 2006-01-26
US20050117387A1 (en) 2005-06-02

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