ITMI20041046A1 - Dispositivo e procedimento per controllo di larghezza di impulso in un dispositivo di memoria a cambiamento di fase - Google Patents

Dispositivo e procedimento per controllo di larghezza di impulso in un dispositivo di memoria a cambiamento di fase

Info

Publication number
ITMI20041046A1
ITMI20041046A1 IT001046A ITMI20041046A ITMI20041046A1 IT MI20041046 A1 ITMI20041046 A1 IT MI20041046A1 IT 001046 A IT001046 A IT 001046A IT MI20041046 A ITMI20041046 A IT MI20041046A IT MI20041046 A1 ITMI20041046 A1 IT MI20041046A1
Authority
IT
Italy
Prior art keywords
procedure
pulse width
phase change
change memory
width control
Prior art date
Application number
IT001046A
Other languages
English (en)
Inventor
Woo-Yeong Cho
Kyung-Hee Kim
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020030035564A external-priority patent/KR100546328B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of ITMI20041046A1 publication Critical patent/ITMI20041046A1/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0064—Verifying circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G11C13/0026—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0061—Timing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50012—Marginal testing, e.g. race, voltage or current testing of timing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0064—Verifying circuits or methods
    • G11C2013/0066—Verify correct writing whilst writing is in progress, e.g. by detecting onset or cessation of current flow in cell and using the detector output to terminate writing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0092—Write characterized by the shape, e.g. form, length, amplitude of the write pulse
IT001046A 2003-06-03 2004-05-25 Dispositivo e procedimento per controllo di larghezza di impulso in un dispositivo di memoria a cambiamento di fase ITMI20041046A1 (it)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020030035564A KR100546328B1 (ko) 2003-06-03 2003-06-03 상 변화 메모리 장치로 인가되는 펄스 폭 자동 제어 방법및 장치
US10/773,901 US7085154B2 (en) 2003-06-03 2004-02-06 Device and method for pulse width control in a phase change memory device

Publications (1)

Publication Number Publication Date
ITMI20041046A1 true ITMI20041046A1 (it) 2004-08-25

Family

ID=36815433

Family Applications (1)

Application Number Title Priority Date Filing Date
IT001046A ITMI20041046A1 (it) 2003-06-03 2004-05-25 Dispositivo e procedimento per controllo di larghezza di impulso in un dispositivo di memoria a cambiamento di fase

Country Status (5)

Country Link
US (2) US7085154B2 (it)
JP (1) JP2004362761A (it)
CN (1) CN100514492C (it)
DE (1) DE102004025975B4 (it)
IT (1) ITMI20041046A1 (it)

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US20060181932A1 (en) 2006-08-17
US7180771B2 (en) 2007-02-20
CN1574093A (zh) 2005-02-02
CN100514492C (zh) 2009-07-15
US7085154B2 (en) 2006-08-01
DE102004025975A1 (de) 2004-12-30
JP2004362761A (ja) 2004-12-24
US20040246804A1 (en) 2004-12-09

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