IT201900021606A1 - Dispositivo di memoria a cambiamento di fase e metodo di programmazione di un dispositivo di memoria a cambiamento di fase - Google Patents
Dispositivo di memoria a cambiamento di fase e metodo di programmazione di un dispositivo di memoria a cambiamento di faseInfo
- Publication number
- IT201900021606A1 IT201900021606A1 IT102019000021606A IT201900021606A IT201900021606A1 IT 201900021606 A1 IT201900021606 A1 IT 201900021606A1 IT 102019000021606 A IT102019000021606 A IT 102019000021606A IT 201900021606 A IT201900021606 A IT 201900021606A IT 201900021606 A1 IT201900021606 A1 IT 201900021606A1
- Authority
- IT
- Italy
- Prior art keywords
- memory device
- phase change
- change memory
- programming
- phase
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/005—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor comprising combined but independently operative RAM-ROM, RAM-PROM, RAM-EPROM cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0033—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
- H10N70/235—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect between different crystalline phases, e.g. cubic and hexagonal
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/0092—Write characterized by the shape, e.g. form, length, amplitude of the write pulse
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5641—Multilevel memory having cells with different number of storage levels
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT102019000021606A IT201900021606A1 (it) | 2019-11-19 | 2019-11-19 | Dispositivo di memoria a cambiamento di fase e metodo di programmazione di un dispositivo di memoria a cambiamento di fase |
US17/099,257 US11462269B2 (en) | 2019-11-19 | 2020-11-16 | Phase change memory device and method of programming a phase change memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT102019000021606A IT201900021606A1 (it) | 2019-11-19 | 2019-11-19 | Dispositivo di memoria a cambiamento di fase e metodo di programmazione di un dispositivo di memoria a cambiamento di fase |
Publications (1)
Publication Number | Publication Date |
---|---|
IT201900021606A1 true IT201900021606A1 (it) | 2021-05-19 |
Family
ID=69743887
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT102019000021606A IT201900021606A1 (it) | 2019-11-19 | 2019-11-19 | Dispositivo di memoria a cambiamento di fase e metodo di programmazione di un dispositivo di memoria a cambiamento di fase |
Country Status (2)
Country | Link |
---|---|
US (1) | US11462269B2 (it) |
IT (1) | IT201900021606A1 (it) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050117387A1 (en) * | 2003-03-27 | 2005-06-02 | Young-Nam Hwang | Phase-change memory and method having restore function |
US20050237820A1 (en) * | 2003-11-28 | 2005-10-27 | Hitachi, Ltd. | Semiconductor integrated circuit device |
US20090067229A1 (en) * | 2007-09-10 | 2009-03-12 | Hee Bok Kang | Semiconductor memory device for writing data to multiple cells simultaneously and refresh method thereof |
US20090201721A1 (en) * | 2008-02-11 | 2009-08-13 | Dae-Won Ha | Phase change memory device and write method thereof |
US20100321989A1 (en) * | 2009-06-19 | 2010-12-23 | Hynix Semiconductor Inc. | Fusion memory device embodied with phase change memory devices having different resistance distributions and data processing system using the same |
US20110122687A1 (en) * | 2009-11-24 | 2011-05-26 | Innovative Silicon Isi Sa | Techniques for reducing disturbance in a semiconductor device |
US8331128B1 (en) * | 2008-12-02 | 2012-12-11 | Adesto Technologies Corporation | Reconfigurable memory arrays having programmable impedance elements and corresponding methods |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5825046A (en) | 1996-10-28 | 1998-10-20 | Energy Conversion Devices, Inc. | Composite memory material comprising a mixture of phase-change memory material and dielectric material |
US6987691B2 (en) | 2003-12-02 | 2006-01-17 | International Business Machines Corporation | Easy axis magnetic amplifier |
US7391642B2 (en) | 2005-01-25 | 2008-06-24 | Intel Corporation | Multilevel programming of phase change memory cells |
EP2249351B1 (en) | 2005-06-03 | 2013-05-01 | STMicroelectronics Srl | Method for multilevel programming of phase change memory cells using a percolation algorithm |
DE602007010624D1 (de) | 2007-09-07 | 2010-12-30 | Milano Politecnico | Phasenwechsel-Speichervorrichtung für Multibit-Speicherung |
US7787291B2 (en) | 2007-09-26 | 2010-08-31 | Intel Corporation | Programming a multilevel phase change memory cell |
IT1392578B1 (it) | 2008-12-30 | 2012-03-09 | St Microelectronics Rousset | Metodo di programmazione multilivello di celle di memoria a cambiamento di fase utilizzante impulsi di reset adattativi |
US8804449B2 (en) * | 2012-09-06 | 2014-08-12 | Micron Technology, Inc. | Apparatus and methods to provide power management for memory devices |
US9666273B2 (en) * | 2015-06-18 | 2017-05-30 | International Business Machines Corporation | Determining a cell state of a resistive memory cell |
US10872664B1 (en) * | 2019-08-01 | 2020-12-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | PCRAM analog programming by a gradual reset cooling step |
-
2019
- 2019-11-19 IT IT102019000021606A patent/IT201900021606A1/it unknown
-
2020
- 2020-11-16 US US17/099,257 patent/US11462269B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050117387A1 (en) * | 2003-03-27 | 2005-06-02 | Young-Nam Hwang | Phase-change memory and method having restore function |
US20050237820A1 (en) * | 2003-11-28 | 2005-10-27 | Hitachi, Ltd. | Semiconductor integrated circuit device |
US20090067229A1 (en) * | 2007-09-10 | 2009-03-12 | Hee Bok Kang | Semiconductor memory device for writing data to multiple cells simultaneously and refresh method thereof |
US20090201721A1 (en) * | 2008-02-11 | 2009-08-13 | Dae-Won Ha | Phase change memory device and write method thereof |
US8331128B1 (en) * | 2008-12-02 | 2012-12-11 | Adesto Technologies Corporation | Reconfigurable memory arrays having programmable impedance elements and corresponding methods |
US20100321989A1 (en) * | 2009-06-19 | 2010-12-23 | Hynix Semiconductor Inc. | Fusion memory device embodied with phase change memory devices having different resistance distributions and data processing system using the same |
US20110122687A1 (en) * | 2009-11-24 | 2011-05-26 | Innovative Silicon Isi Sa | Techniques for reducing disturbance in a semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
US11462269B2 (en) | 2022-10-04 |
US20210166757A1 (en) | 2021-06-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG10201905767SA (en) | Nonvolatile memory devices and methods of operating a nonvolatile memory | |
IT201700034719A1 (it) | Metodo per controllare le operazioni di verifica di programmazione di una memoria non volatile e relativo circuito | |
DK3637886T3 (da) | Fremgangsmåder og indretninger til konfigurering af en periodisk opdateringstimer | |
GB201801517D0 (en) | A method of determining a state energy | |
EP3877978A4 (en) | METHOD OF PROGRAMMING INTO FLASH MEMORY DEVICES | |
EP3980995A4 (en) | METHOD OF PROGRAMMING A STORAGE DEVICE AND ASSOCIATED STORAGE DEVICE | |
PL3706972T3 (pl) | Sposób wytwarzania elementu i odpowiedni element | |
EP3465686A4 (en) | ASYMMETRIC DETECTION AMPLIFIER AND RELATED METHOD FOR FLASH MEMORY DEVICES | |
EP3891745A4 (en) | METHOD FOR PROGRAMMING A MEMORY DEVICE AND ASSOCIATED MEMORY DEVICE | |
DK3620296T3 (da) | Ballepresse samt styrefremgangsmåde til en ballepresse | |
SG10201908263RA (en) | Nonvolatile memory device and operating method of the same | |
DK3452168T3 (da) | Behandlingsindretning og fremgangsmåde til fremstilling af en behandlingsindretning | |
SE1651513A1 (sv) | Method for making a film comprising mfc | |
EP3891746A4 (en) | METHOD FOR PERFORMING PROGRAMMING OPERATION AND ASSOCIATED MEMORY DEVICE | |
DK3385469T3 (da) | Forankringsenhed til en lodret forskalling og lodret forskalling | |
ITUA20161622A1 (it) | Un elemento cosmetico e un metodo per realizzare tale elemento cosmetico | |
IT201600090481A1 (it) | Metodo per il fissaggio di un filo per maglieria | |
DK3604879T3 (da) | Rørledning med intelligent modul, viklingsmaskine til spiralformet rørledning med intelligent modul og viklingsfremgangsmåde dertil | |
IT201900021606A1 (it) | Dispositivo di memoria a cambiamento di fase e metodo di programmazione di un dispositivo di memoria a cambiamento di fase | |
DK3535226T3 (da) | Fremgangsmåde til påføring af et ikke-portland-cement-baseret materiale | |
DK3636975T3 (da) | Forsyningsledningsafslutningsanordning og fremgangsmåde til dannelse af en forsyningsledningsafslutningsanordning | |
DK3425929T3 (da) | Programmerbar høreanordning og fremgangsmåde til programmering af en høreanordning | |
DK3619386T3 (da) | Dørindretning og fremgangsmåde til at justere en dørindretning | |
DK3502535T3 (da) | Maskine til at danne en rørformet forstærkning af et rør og relateret fremgangsmåde | |
IT201700098782A1 (it) | Metodo di realizzazione di un pannello termico-fotovoltaico |