SG10201908263RA - Nonvolatile memory device and operating method of the same - Google Patents

Nonvolatile memory device and operating method of the same

Info

Publication number
SG10201908263RA
SG10201908263RA SG10201908263RA SG10201908263RA SG10201908263RA SG 10201908263R A SG10201908263R A SG 10201908263RA SG 10201908263R A SG10201908263R A SG 10201908263RA SG 10201908263R A SG10201908263R A SG 10201908263RA SG 10201908263R A SG10201908263R A SG 10201908263RA
Authority
SG
Singapore
Prior art keywords
same
memory device
nonvolatile memory
operating method
operating
Prior art date
Application number
SG10201908263RA
Inventor
Park Jong-Chul
Lee Youn-yeol
Lee Seul-bee
Lim Kyung-sub
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of SG10201908263RA publication Critical patent/SG10201908263RA/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5671—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge trapping in an insulator
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
SG10201908263RA 2018-10-18 2019-09-06 Nonvolatile memory device and operating method of the same SG10201908263RA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020180124579A KR102631354B1 (en) 2018-10-18 2018-10-18 Nonvolatile memory device and operating method of the same

Publications (1)

Publication Number Publication Date
SG10201908263RA true SG10201908263RA (en) 2020-05-28

Family

ID=70279702

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201908263RA SG10201908263RA (en) 2018-10-18 2019-09-06 Nonvolatile memory device and operating method of the same

Country Status (4)

Country Link
US (2) US10885983B2 (en)
KR (1) KR102631354B1 (en)
CN (1) CN111081299A (en)
SG (1) SG10201908263RA (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11250911B2 (en) 2018-10-18 2022-02-15 Samsung Electronics Co., Ltd. Nonvolatile memory device and operating method of the same
KR102631354B1 (en) * 2018-10-18 2024-01-31 삼성전자주식회사 Nonvolatile memory device and operating method of the same
US11672126B2 (en) * 2020-06-18 2023-06-06 Taiwan Semiconductor Manufacturing Company, Ltd. Three-dimensional memory device and manufacturing method thereof
KR20220056919A (en) 2020-10-28 2022-05-09 삼성전자주식회사 Non-volatile memory device, controller for controlling the ame, storage device having the same, and reading method thereof
KR20220060572A (en) 2020-11-04 2022-05-12 삼성전자주식회사 Non-volatile memory device, controller for controlling the ame, storage device having the same, and reading method thereof

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US9378831B2 (en) * 2010-02-09 2016-06-28 Samsung Electronics Co., Ltd. Nonvolatile memory devices, operating methods thereof and memory systems including the same
KR101691088B1 (en) 2010-02-17 2016-12-29 삼성전자주식회사 Nonvolatile memory device, operating method thereof and memory system including the same
KR101117589B1 (en) 2010-02-19 2012-02-20 서울대학교산학협력단 Fabrication method of single crystalline silicon stacked array and 3d nand flash memory array using the same
US8570808B2 (en) * 2010-08-09 2013-10-29 Samsung Electronics Co., Ltd. Nonvolatile memory device with 3D memory cell array
KR20140009189A (en) 2010-10-18 2014-01-22 아이엠이씨 Vertical semiconductor memory device and manufacturing method thereof
KR101762828B1 (en) * 2011-04-05 2017-07-31 삼성전자주식회사 Nonvolatile memory device and operating method of nonvolatile memory device
KR102024850B1 (en) * 2012-08-08 2019-11-05 삼성전자주식회사 Memory system including three dimensional nonvolatile memory device and programming method thereof
US9305654B2 (en) 2012-12-19 2016-04-05 Intel Corporation Erase and soft program for vertical NAND flash
US8988945B1 (en) 2013-10-10 2015-03-24 Sandisk Technologies Inc. Programming time improvement for non-volatile memory
KR20150059499A (en) * 2013-11-22 2015-06-01 에스케이하이닉스 주식회사 Non-volatile memory device and erase method thereof
US9343369B2 (en) 2014-05-19 2016-05-17 Qualcomm Incorporated Three dimensional (3D) integrated circuits (ICs) (3DICs) and related systems
JP6084246B2 (en) 2014-05-21 2017-02-22 マクロニクス インターナショナル カンパニー リミテッド 3D independent double gate flash memory
US9397110B2 (en) 2014-05-21 2016-07-19 Macronix International Co., Ltd. 3D independent double gate flash memory
KR102293136B1 (en) 2014-10-22 2021-08-26 삼성전자주식회사 Nonvolatile memory device, storage device having the same, operating method thereof
US9245642B1 (en) 2015-03-30 2016-01-26 Sandisk Technologies Inc. Temperature dependent voltage to unselected drain side select transistor during program of 3D NAND
KR102398666B1 (en) 2015-08-19 2022-05-16 삼성전자주식회사 Non volatile memory devices and non volatile memory system comprising thereof
KR20170056072A (en) 2015-11-12 2017-05-23 삼성전자주식회사 Nonvolatile memory device including multi-plane
KR20170065076A (en) * 2015-12-02 2017-06-13 에스케이하이닉스 주식회사 Memory system and operating method of memory system
US9711228B1 (en) * 2016-05-27 2017-07-18 Micron Technology, Inc. Apparatus and methods of operating memory with erase de-bias
KR102533016B1 (en) * 2016-07-28 2023-05-17 에스케이하이닉스 주식회사 Memory device and operating method thereof
KR102631354B1 (en) * 2018-10-18 2024-01-31 삼성전자주식회사 Nonvolatile memory device and operating method of the same
KR102650996B1 (en) 2018-11-06 2024-03-26 삼성전자주식회사 Semiconductor device

Also Published As

Publication number Publication date
KR20200043769A (en) 2020-04-28
US10885983B2 (en) 2021-01-05
US11164631B2 (en) 2021-11-02
US20200126621A1 (en) 2020-04-23
KR102631354B1 (en) 2024-01-31
CN111081299A (en) 2020-04-28
US20210118509A1 (en) 2021-04-22

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