SG10201905109VA - Non-volatile memory device and erasing method of the same - Google Patents
Non-volatile memory device and erasing method of the sameInfo
- Publication number
- SG10201905109VA SG10201905109VA SG10201905109VA SG10201905109VA SG10201905109VA SG 10201905109V A SG10201905109V A SG 10201905109VA SG 10201905109V A SG10201905109V A SG 10201905109VA SG 10201905109V A SG10201905109V A SG 10201905109VA SG 10201905109V A SG10201905109V A SG 10201905109VA
- Authority
- SG
- Singapore
- Prior art keywords
- same
- memory device
- volatile memory
- erasing method
- erasing
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
- G11C11/5635—Erasing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/24—Bit-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
- G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
- G11C16/3495—Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020180066091A KR102606826B1 (en) | 2018-06-08 | 2018-06-08 | Nonvolatile memory devices and erasing method of the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201905109VA true SG10201905109VA (en) | 2020-01-30 |
Family
ID=66751920
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201905109VA SG10201905109VA (en) | 2018-06-08 | 2019-06-04 | Non-volatile memory device and erasing method of the same |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10777278B2 (en) |
| EP (1) | EP3579236B1 (en) |
| KR (1) | KR102606826B1 (en) |
| CN (1) | CN110580929A (en) |
| SG (1) | SG10201905109VA (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020047321A (en) * | 2018-09-14 | 2020-03-26 | キオクシア株式会社 | Semiconductor storage device |
| KR20210028307A (en) * | 2019-09-03 | 2021-03-12 | 삼성전자주식회사 | Semiconductor devices and operating methods of the same |
| JP2021093230A (en) * | 2019-12-10 | 2021-06-17 | キオクシア株式会社 | Semiconductor storage device |
| KR20220015245A (en) | 2020-07-30 | 2022-02-08 | 삼성전자주식회사 | Two way precharge during programming in non-volatile memory device |
| KR20220076986A (en) | 2020-12-01 | 2022-06-08 | 에스케이하이닉스 주식회사 | Memory device and operating method thereof |
| CN115668379A (en) * | 2021-01-08 | 2023-01-31 | 长江存储科技有限责任公司 | Architecture and method for NAND memory operation |
| US11355198B1 (en) | 2021-01-19 | 2022-06-07 | Sandisk Technologies Llc | Smart erase scheme |
| CN112768454B (en) * | 2021-01-21 | 2022-08-09 | 长江存储科技有限责任公司 | Erasing operation method of three-dimensional memory |
| US11437110B1 (en) | 2021-03-25 | 2022-09-06 | Sandisk Technologies Llc | Erase tail comparator scheme |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100704021B1 (en) * | 2005-11-08 | 2007-04-04 | 삼성전자주식회사 | Data erasing method of nonvolatile semiconductor memory device for improving the reliability |
| KR101161393B1 (en) * | 2006-05-15 | 2012-07-03 | 에스케이하이닉스 주식회사 | Method for erasing flash memory device |
| KR101226685B1 (en) | 2007-11-08 | 2013-01-25 | 삼성전자주식회사 | Vertical type semiconductor device and Method of manufacturing the same |
| KR100936879B1 (en) * | 2007-12-28 | 2010-01-14 | 주식회사 하이닉스반도체 | Erasing method and Soft programming method of non volatile memory device |
| US8488381B2 (en) | 2009-02-02 | 2013-07-16 | Samsung Electronics Co., Ltd. | Non-volatile memory device having vertical structure and method of operating the same |
| US9324440B2 (en) * | 2010-02-09 | 2016-04-26 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices, operating methods thereof and memory systems including the same |
| KR101691092B1 (en) | 2010-08-26 | 2016-12-30 | 삼성전자주식회사 | Nonvolatile memory device, operating method thereof and memory system including the same |
| US8553466B2 (en) | 2010-03-04 | 2013-10-08 | Samsung Electronics Co., Ltd. | Non-volatile memory device, erasing method thereof, and memory system including the same |
| US9536970B2 (en) | 2010-03-26 | 2017-01-03 | Samsung Electronics Co., Ltd. | Three-dimensional semiconductor memory devices and methods of fabricating the same |
| KR101682666B1 (en) | 2010-08-11 | 2016-12-07 | 삼성전자주식회사 | Nonvolatile memory devicwe, channel boosting method thereof, programming method thereof, and memory system having the same |
| JP2012119013A (en) * | 2010-11-29 | 2012-06-21 | Toshiba Corp | Nonvolatile semiconductor memory device |
| KR20130005708A (en) * | 2011-07-07 | 2013-01-16 | 에스케이하이닉스 주식회사 | Semiconductor memory device and operating method thereof |
| KR101842507B1 (en) * | 2011-10-06 | 2018-03-28 | 삼성전자주식회사 | Operating method of nonvolatile memroy and method of controlling nonvolatile memroy |
| US8488382B1 (en) | 2011-12-21 | 2013-07-16 | Sandisk Technologies Inc. | Erase inhibit for 3D non-volatile memory |
| US8908435B2 (en) | 2011-12-21 | 2014-12-09 | Sandisk Technologies Inc. | Erase operation with controlled select gate voltage for 3D non-volatile memory |
| US8787094B2 (en) | 2012-04-18 | 2014-07-22 | Sandisk Technologies Inc. | Soft erase operation for 3D non-volatile memory with selective inhibiting of passed bits |
| US9019775B2 (en) * | 2012-04-18 | 2015-04-28 | Sandisk Technologies Inc. | Erase operation for 3D non-volatile memory with controllable gate-induced drain leakage current |
| KR20140020155A (en) | 2012-08-08 | 2014-02-18 | 에스케이하이닉스 주식회사 | Semiconductor memory device and method thereof |
| JP2014038670A (en) | 2012-08-13 | 2014-02-27 | Toshiba Corp | Nonvolatile semiconductor memory device |
| KR102019843B1 (en) * | 2012-12-03 | 2019-09-11 | 에스케이하이닉스 주식회사 | Erasing method for charge trap device |
| WO2014137928A2 (en) | 2013-03-04 | 2014-09-12 | Sandisk Technologies Inc. | Dynamic erase depth for improved endurance of non-volatile memory |
| KR102083506B1 (en) | 2013-05-10 | 2020-03-02 | 삼성전자주식회사 | 3d flash memory device having dummy wordlines and data storage device including the same |
| US9171637B2 (en) * | 2013-08-27 | 2015-10-27 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device and method of controlling the same |
| US8891308B1 (en) | 2013-09-11 | 2014-11-18 | Sandisk Technologies Inc. | Dynamic erase voltage step size selection for 3D non-volatile memory |
| US9449698B1 (en) | 2015-10-20 | 2016-09-20 | Sandisk Technologies Llc | Block and zone erase algorithm for memory |
| US9711228B1 (en) * | 2016-05-27 | 2017-07-18 | Micron Technology, Inc. | Apparatus and methods of operating memory with erase de-bias |
| US10304551B2 (en) | 2016-06-27 | 2019-05-28 | Sandisk Technologies Llc | Erase speed based word line control |
-
2018
- 2018-06-08 KR KR1020180066091A patent/KR102606826B1/en active IP Right Grant
-
2019
- 2019-05-02 US US16/401,877 patent/US10777278B2/en active Active
- 2019-05-30 CN CN201910461724.9A patent/CN110580929A/en active Pending
- 2019-06-03 EP EP19177925.5A patent/EP3579236B1/en active Active
- 2019-06-04 SG SG10201905109VA patent/SG10201905109VA/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| KR102606826B1 (en) | 2023-11-27 |
| US10777278B2 (en) | 2020-09-15 |
| KR20190139519A (en) | 2019-12-18 |
| US20190378574A1 (en) | 2019-12-12 |
| EP3579236A1 (en) | 2019-12-11 |
| EP3579236B1 (en) | 2023-09-13 |
| CN110580929A (en) | 2019-12-17 |
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