SG11202008353RA - Memory cell and method of forming the same - Google Patents

Memory cell and method of forming the same

Info

Publication number
SG11202008353RA
SG11202008353RA SG11202008353RA SG11202008353RA SG11202008353RA SG 11202008353R A SG11202008353R A SG 11202008353RA SG 11202008353R A SG11202008353R A SG 11202008353RA SG 11202008353R A SG11202008353R A SG 11202008353RA SG 11202008353R A SG11202008353R A SG 11202008353RA
Authority
SG
Singapore
Prior art keywords
forming
same
memory cell
cell
memory
Prior art date
Application number
SG11202008353RA
Inventor
Wen Xiao
Wendong Song
Jun Ding
Ernult Franck Gerard
Original Assignee
Agency Science Tech & Res
Nat Univ Singapore
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency Science Tech & Res, Nat Univ Singapore filed Critical Agency Science Tech & Res
Publication of SG11202008353RA publication Critical patent/SG11202008353RA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8418—Electrodes adapted for focusing electric field or current, e.g. tip-shaped
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/52—Structure characterized by the electrode material, shape, etc.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
SG11202008353RA 2018-03-28 2019-03-08 Memory cell and method of forming the same SG11202008353RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SG10201802567Q 2018-03-28
PCT/SG2019/050128 WO2019190392A1 (en) 2018-03-28 2019-03-08 Memory cell and method of forming the same

Publications (1)

Publication Number Publication Date
SG11202008353RA true SG11202008353RA (en) 2020-09-29

Family

ID=68062640

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202008353RA SG11202008353RA (en) 2018-03-28 2019-03-08 Memory cell and method of forming the same

Country Status (3)

Country Link
US (1) US11659779B2 (en)
SG (1) SG11202008353RA (en)
WO (1) WO2019190392A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11276732B2 (en) * 2019-09-20 2022-03-15 International Business Machines Corporation Semiconductor memory devices formed using selective barrier metal removal
CN114975772A (en) 2021-02-25 2022-08-30 联华电子股份有限公司 Variable resistive memory device and method of forming the same
KR20240006677A (en) * 2021-05-12 2024-01-15 테트라멤 인코퍼레이티드 Resistive random access memory device with multi-component electrodes and discontinuous interface layers
TWI824516B (en) * 2021-05-12 2023-12-01 美商特憶智能科技公司 Resistive random-access memory devices with multicomponent electrodes and discontinuous interface layers
TW202404045A (en) * 2021-05-12 2024-01-16 美商特憶智能科技公司 Resistive random-access memory devices with engineered electronic defects and methods for making the same
WO2023245205A1 (en) * 2022-06-17 2023-12-21 Tetramem Inc. Resistive random-access memory devices with metal-nitride compound electrodes

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070045694A1 (en) 2005-08-30 2007-03-01 Sharp Laboratories Of America, Inc. Method of selecting a RRAM memory material and electrode material
US8067762B2 (en) 2006-11-16 2011-11-29 Macronix International Co., Ltd. Resistance random access memory structure for enhanced retention
US8207593B2 (en) * 2009-07-28 2012-06-26 Hewlett-Packard Development Company, L.P. Memristor having a nanostructure in the switching material
US8569172B1 (en) 2012-08-14 2013-10-29 Crossbar, Inc. Noble metal/non-noble metal electrode for RRAM applications
US8558212B2 (en) 2010-09-29 2013-10-15 Crossbar, Inc. Conductive path in switching material in a resistive random access memory device and control
US8817524B2 (en) 2011-07-29 2014-08-26 Intermolecular, Inc. Resistive random access memory cells having metal alloy current limiting layers
KR101381997B1 (en) * 2012-08-24 2014-04-04 한국과학기술원 Resistive memory device using block copolymer self-assembly technology and manufacturing method for the same
US8686389B1 (en) 2012-10-16 2014-04-01 Intermolecular, Inc. Diffusion barrier layer for resistive random access memory cells
US8912518B2 (en) 2012-11-08 2014-12-16 Intermolecular, Inc. Resistive random access memory cells having doped current limiting layers
US20140175360A1 (en) 2012-12-20 2014-06-26 Intermolecular Inc. Bilayered Oxide Structures for ReRAM Cells
US9515262B2 (en) 2013-05-29 2016-12-06 Shih-Yuan Wang Resistive random-access memory with implanted and radiated channels
US9368722B2 (en) * 2013-09-06 2016-06-14 Taiwan Semiconductor Manufacturing Company Ltd. Resistive random access memory and manufacturing method thereof
US9847378B2 (en) * 2014-04-30 2017-12-19 Hewlett Packard Enterprise Development Lp Resistive memory devices with a multi-component electrode
WO2016048327A1 (en) 2014-09-25 2016-03-31 Intel Corporation Rare earth metal & metal oxide electrode interfacing of oxide memory element in resistive random access memory cell
US9653680B2 (en) 2015-06-27 2017-05-16 Intel Corporation Techniques for filament localization, edge effect reduction, and forming/switching voltage reduction in RRAM devices
JP2018006696A (en) * 2016-07-08 2018-01-11 東芝メモリ株式会社 Storage device
CN107706205B (en) * 2017-09-29 2020-07-14 中国科学院宁波材料技术与工程研究所 High-stability unipolar resistive random access memory

Also Published As

Publication number Publication date
US20210013407A1 (en) 2021-01-14
US11659779B2 (en) 2023-05-23
WO2019190392A1 (en) 2019-10-03

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