SG10201912041UA - Memory device and method of forming the same - Google Patents

Memory device and method of forming the same

Info

Publication number
SG10201912041UA
SG10201912041UA SG10201912041UA SG10201912041UA SG10201912041UA SG 10201912041U A SG10201912041U A SG 10201912041UA SG 10201912041U A SG10201912041U A SG 10201912041UA SG 10201912041U A SG10201912041U A SG 10201912041UA SG 10201912041U A SG10201912041U A SG 10201912041UA
Authority
SG
Singapore
Prior art keywords
forming
same
memory device
memory
Prior art date
Application number
SG10201912041UA
Inventor
Wei He
Franck Gerard Ernult
Eng Keong Chua
Yu Jiang
Original Assignee
Agency Science Tech & Res
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency Science Tech & Res filed Critical Agency Science Tech & Res
Publication of SG10201912041UA publication Critical patent/SG10201912041UA/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H10B63/24—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the Ovonic threshold switching type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H10B63/845—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays the switching components being connected to a common vertical conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/71—Three dimensional array

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
SG10201912041UA 2016-03-15 2017-03-14 Memory device and method of forming the same SG10201912041UA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SG10201601973Q 2016-03-15

Publications (1)

Publication Number Publication Date
SG10201912041UA true SG10201912041UA (en) 2020-02-27

Family

ID=59851704

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201912041UA SG10201912041UA (en) 2016-03-15 2017-03-14 Memory device and method of forming the same
SG11201807260RA SG11201807260RA (en) 2016-03-15 2017-03-14 Memory device and method of forming the same

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG11201807260RA SG11201807260RA (en) 2016-03-15 2017-03-14 Memory device and method of forming the same

Country Status (3)

Country Link
US (1) US20200303639A1 (en)
SG (2) SG10201912041UA (en)
WO (1) WO2017160233A1 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3076052B1 (en) * 2017-12-22 2021-12-31 Commissariat Energie Atomique RESISTIVE MEMORY IN THREE DIMENSIONS AND METHOD FOR OBTAINING SUCH A MEMORY
WO2019180405A1 (en) * 2018-03-23 2019-09-26 Arm Ltd Method for fabrication of a cem device
US11075339B2 (en) 2018-10-17 2021-07-27 Cerfe Labs, Inc. Correlated electron material (CEM) devices with contact region sidewall insulation
US10566527B2 (en) 2018-03-23 2020-02-18 ARM, Ltd. Method for fabrication of a CEM device
US10833271B2 (en) * 2018-03-23 2020-11-10 Arm Ltd. Method for fabrication of a CEM device
FR3090194B1 (en) * 2018-12-13 2020-12-18 Commissariat Energie Atomique RESISTIVE MEMORY IN THREE DIMENSIONS AND PROCESS FOR OBTAINING SUCH A MEMORY
US11282895B2 (en) * 2019-07-02 2022-03-22 Micron Technology, Inc. Split pillar architectures for memory devices
US11201276B2 (en) 2020-02-13 2021-12-14 Cerfe Labs, Inc. Switch cell device
US11133466B1 (en) 2020-04-29 2021-09-28 Cerfe Labs, Inc. Methods for controlling switching characteristics of a correlated electron material device
US20220302210A1 (en) * 2020-07-22 2022-09-22 Micron Technology, Inc. Memory device and method for manufacturing the same
US11864475B2 (en) 2021-05-27 2024-01-02 Micron Technology, Inc. Memory device with laterally formed memory cells
CN113555499A (en) * 2021-06-11 2021-10-26 河北大学 Solid electrolyte threshold switch device, preparation method thereof and 1S1R integrated structure

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008277543A (en) * 2007-04-27 2008-11-13 Toshiba Corp Nonvolatile semiconductor memory device
KR101069724B1 (en) * 2009-12-22 2011-10-04 주식회사 하이닉스반도체 Phase Change Memory Having 3 Dimension Stack Structure and Method of Manufacturing the Same
KR101811308B1 (en) * 2010-11-10 2017-12-27 삼성전자주식회사 Non-volatile memory device having resistance changeable element and method of forming the same
JP2013197396A (en) * 2012-03-21 2013-09-30 Toshiba Corp Semiconductor memory device and method of manufacturing the same
WO2014003396A1 (en) * 2012-06-28 2014-01-03 인텔렉추얼 디스커버리(주) Vertical resistive random access memory device, and method for manufacturing same
US9397146B2 (en) * 2014-05-15 2016-07-19 Globalfoundries Singapore Pte. Ltd. Vertical random access memory with selectors

Also Published As

Publication number Publication date
US20200303639A1 (en) 2020-09-24
WO2017160233A1 (en) 2017-09-21
SG11201807260RA (en) 2018-09-27

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