SG10202002136TA - Nonvolatile memory device and method for fabricating the same - Google Patents

Nonvolatile memory device and method for fabricating the same

Info

Publication number
SG10202002136TA
SG10202002136TA SG10202002136TA SG10202002136TA SG10202002136TA SG 10202002136T A SG10202002136T A SG 10202002136TA SG 10202002136T A SG10202002136T A SG 10202002136TA SG 10202002136T A SG10202002136T A SG 10202002136TA SG 10202002136T A SG10202002136T A SG 10202002136TA
Authority
SG
Singapore
Prior art keywords
fabricating
same
memory device
nonvolatile memory
nonvolatile
Prior art date
Application number
SG10202002136TA
Inventor
Kwang Young Jung
Jong Won Kim
Young Hwan Son
Jee Hoon Han
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of SG10202002136TA publication Critical patent/SG10202002136TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
    • H01L29/42348—Gate electrodes for transistors with charge trapping gate insulator with trapping site formed by at least two separated sites, e.g. multi-particles trapping site
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/50—EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
SG10202002136TA 2019-06-10 2020-03-09 Nonvolatile memory device and method for fabricating the same SG10202002136TA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020190067910A KR20200141213A (en) 2019-06-10 2019-06-10 Nonvolatile memory device and method for fabricating the same

Publications (1)

Publication Number Publication Date
SG10202002136TA true SG10202002136TA (en) 2021-01-28

Family

ID=73651613

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10202002136TA SG10202002136TA (en) 2019-06-10 2020-03-09 Nonvolatile memory device and method for fabricating the same

Country Status (4)

Country Link
US (1) US11296110B2 (en)
KR (1) KR20200141213A (en)
CN (1) CN112071854A (en)
SG (1) SG10202002136TA (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210117522A (en) * 2020-03-19 2021-09-29 삼성전자주식회사 Nonvolatile memory device and method for fabricating the same
KR102556380B1 (en) * 2021-02-02 2023-07-17 한양대학교 산학협력단 3d flash memory with wider memory cell area
JP2023046164A (en) * 2021-09-22 2023-04-03 キオクシア株式会社 Semiconductor device
TWI789295B (en) * 2022-04-27 2023-01-01 旺宏電子股份有限公司 Memory device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010010596A (en) * 2008-06-30 2010-01-14 Toshiba Corp Nonvolatile semiconductor storage device and manufacturing method
JP5086933B2 (en) * 2008-08-06 2012-11-28 株式会社東芝 Driving method of nonvolatile semiconductor memory device
JP2011023586A (en) 2009-07-16 2011-02-03 Toshiba Corp Semiconductor memory device and method of manufacturing the same
KR101110355B1 (en) 2010-04-05 2012-02-14 서울대학교산학협력단 3d stacked array having cut-off gate line and fabrication method thereof
US8437192B2 (en) 2010-05-21 2013-05-07 Macronix International Co., Ltd. 3D two bit-per-cell NAND flash memory
US9349745B2 (en) 2014-08-25 2016-05-24 Macronix International Co., Ltd. 3D NAND nonvolatile memory with staggered vertical gates
US9620514B2 (en) 2014-09-05 2017-04-11 Sandisk Technologies Llc 3D semicircular vertical NAND string with self aligned floating gate or charge trap cell memory cells and methods of fabricating and operating the same
TWI582964B (en) 2015-12-30 2017-05-11 旺宏電子股份有限公司 A memory device and method for fabricating the same
US9812462B1 (en) 2016-06-07 2017-11-07 Sandisk Technologies Llc Memory hole size variation in a 3D stacked memory
KR20180012640A (en) 2016-07-27 2018-02-06 삼성전자주식회사 Vertical memory device and method of manufacturing the same

Also Published As

Publication number Publication date
US11296110B2 (en) 2022-04-05
KR20200141213A (en) 2020-12-18
US20200388633A1 (en) 2020-12-10
CN112071854A (en) 2020-12-11

Similar Documents

Publication Publication Date Title
EP3891811A4 (en) Non-volatile memory device and manufacturing method thereof
SG11202010376WA (en) Multiple-stack three-dimensional memory device and fabrication method thereof
SG10201909446PA (en) Semiconductor memory device and method for forming the same
SG10201907763SA (en) Nonvolatile Memory Device And Method For Fabricating The Same
SG10202002136TA (en) Nonvolatile memory device and method for fabricating the same
EP3853902A4 (en) Three-dimensional memory device and manufacturing method thereof
SG10202006171VA (en) Nonvolatile memory device
SG10201905109VA (en) Non-volatile memory device and erasing method of the same
EP3844810A4 (en) Bonded memory device and fabrication methods thereof
EP3895214A4 (en) Three-dimensional memory device and manufacturing method thereof
SG10201908263RA (en) Nonvolatile memory device and operating method of the same
SG10202009115XA (en) Vertical-type nonvolatile memory device and method of fabricating the same
EP3624185A4 (en) Antifuse, antifuse manufacturing method, and memory device
EP3881322A4 (en) Non-volatile memory device and control method
EP3729289A4 (en) A memory apparatus and method for controlling the same
SG11202011551QA (en) Memory device
SG10202007985RA (en) Semiconductor memory device and a method of fabricating the same
EP3912164A4 (en) Non-volatile memory device and control method
SG10201909519PA (en) Semiconductor memory device and manufacturing method thereof
SG10201912382TA (en) Memory device, method of forming the same, method for controlling the same and memory array
SG10202003517XA (en) Memory device
EP4019918A4 (en) Element and method for manufacturing element
SG10202006866PA (en) Nonvolatile memory device
SG10202007914UA (en) Memory device and method of operating the memory device
KR102377569B1 (en) Nonvolatile Memory Device