SG10202006171VA - Nonvolatile memory device - Google Patents

Nonvolatile memory device

Info

Publication number
SG10202006171VA
SG10202006171VA SG10202006171VA SG10202006171VA SG10202006171VA SG 10202006171V A SG10202006171V A SG 10202006171VA SG 10202006171V A SG10202006171V A SG 10202006171VA SG 10202006171V A SG10202006171V A SG 10202006171VA SG 10202006171V A SG10202006171V A SG 10202006171VA
Authority
SG
Singapore
Prior art keywords
memory device
nonvolatile memory
nonvolatile
memory
Prior art date
Application number
SG10202006171VA
Inventor
Yun Kyunghwa
Kim Chanho
Kang Dongku
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of SG10202006171VA publication Critical patent/SG10202006171VA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/41—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/60—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the control gate being a doped region, e.g. single-poly memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/50—EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
SG10202006171VA 2019-10-16 2020-06-26 Nonvolatile memory device SG10202006171VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020190128221A KR20210045538A (en) 2019-10-16 2019-10-16 Nonvolatile memory device
US16/878,756 US11430806B2 (en) 2019-10-16 2020-05-20 Nonvolatile memory device

Publications (1)

Publication Number Publication Date
SG10202006171VA true SG10202006171VA (en) 2021-05-28

Family

ID=75403157

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10202006171VA SG10202006171VA (en) 2019-10-16 2020-06-26 Nonvolatile memory device

Country Status (4)

Country Link
US (1) US11430806B2 (en)
KR (1) KR20210045538A (en)
CN (1) CN112670292A (en)
SG (1) SG10202006171VA (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200078784A (en) * 2018-12-21 2020-07-02 삼성전자주식회사 Three-dimensional semiconductor memory devices
US11404091B2 (en) * 2020-06-19 2022-08-02 Taiwan Semiconductor Manufacturing Co., Ltd. Memory array word line routing
US11355516B2 (en) 2020-07-16 2022-06-07 Taiwan Semiconductor Manufacturing Co., Ltd. Three-dimensional memory device and method
US11647634B2 (en) 2020-07-16 2023-05-09 Taiwan Semiconductor Manufacturing Co., Ltd. Three-dimensional memory device and method
US11423966B2 (en) 2020-07-30 2022-08-23 Taiwan Semiconductor Manufacturing Co., Ltd. Memory array staircase structure
US11348640B1 (en) * 2021-04-05 2022-05-31 Micron Technology, Inc. Charge screening structure for spike current suppression in a memory array
KR20230020366A (en) * 2021-08-03 2023-02-10 어플라이드 머티어리얼스, 인코포레이티드 Selection gate structure and fabrication method for 3d memory
KR20230075014A (en) 2021-11-22 2023-05-31 삼성전자주식회사 Nonvolatile memory devices and mehtods of operatig nonvoltaile memory devices
KR20240034542A (en) * 2022-09-07 2024-03-14 삼성전자주식회사 Semiconducotr memory device and electronic system including the same

Family Cites Families (16)

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Publication number Priority date Publication date Assignee Title
KR100582422B1 (en) 2004-05-15 2006-05-22 에스티마이크로일렉트로닉스 엔.브이. Nand flash memory device
KR101226685B1 (en) 2007-11-08 2013-01-25 삼성전자주식회사 Vertical type semiconductor device and Method of manufacturing the same
US8044448B2 (en) 2008-07-25 2011-10-25 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
KR101691092B1 (en) 2010-08-26 2016-12-30 삼성전자주식회사 Nonvolatile memory device, operating method thereof and memory system including the same
US8553466B2 (en) 2010-03-04 2013-10-08 Samsung Electronics Co., Ltd. Non-volatile memory device, erasing method thereof, and memory system including the same
US9536970B2 (en) 2010-03-26 2017-01-03 Samsung Electronics Co., Ltd. Three-dimensional semiconductor memory devices and methods of fabricating the same
KR101682666B1 (en) 2010-08-11 2016-12-07 삼성전자주식회사 Nonvolatile memory devicwe, channel boosting method thereof, programming method thereof, and memory system having the same
KR101855324B1 (en) 2011-05-04 2018-05-09 삼성전자주식회사 Three dimmensional semiconductor memory deivces and methods of fabricating the same
KR20130072522A (en) 2011-12-22 2013-07-02 에스케이하이닉스 주식회사 Three dimension non-volatile memory device and method for manufacturing the same
JP2014027104A (en) 2012-07-26 2014-02-06 Toshiba Corp Semiconductor device and manufacturing method of the same
KR102259943B1 (en) * 2014-12-08 2021-06-04 삼성전자주식회사 Nonvolatile memory device including multi-plane
US9941209B2 (en) 2016-03-11 2018-04-10 Micron Technology, Inc. Conductive structures, systems and devices including conductive structures and related methods
KR102550571B1 (en) 2016-05-02 2023-07-04 에스케이하이닉스 주식회사 Semiconductor device and method of manufacturing the same
US10249640B2 (en) 2016-06-08 2019-04-02 Sandisk Technologies Llc Within-array through-memory-level via structures and method of making thereof
KR20190013347A (en) 2017-08-01 2019-02-11 에스케이하이닉스 주식회사 Semiconductor device and manufacturing method thereof
KR20200114285A (en) 2019-03-28 2020-10-07 에스케이하이닉스 주식회사 Semiconductor memory device

Also Published As

Publication number Publication date
US11430806B2 (en) 2022-08-30
CN112670292A (en) 2021-04-16
KR20210045538A (en) 2021-04-27
US20210118903A1 (en) 2021-04-22

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