SG11202006092XA - Memory device - Google Patents
Memory deviceInfo
- Publication number
- SG11202006092XA SG11202006092XA SG11202006092XA SG11202006092XA SG11202006092XA SG 11202006092X A SG11202006092X A SG 11202006092XA SG 11202006092X A SG11202006092X A SG 11202006092XA SG 11202006092X A SG11202006092X A SG 11202006092XA SG 11202006092X A SG11202006092X A SG 11202006092XA
- Authority
- SG
- Singapore
- Prior art keywords
- memory device
- memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
- G11C14/0009—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a DRAM cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/565—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using capacitive charge storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
- G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
- G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
- G11C14/0009—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a DRAM cell
- G11C14/0018—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a DRAM cell whereby the nonvolatile element is an EEPROM element, e.g. a floating gate or metal-nitride-oxide-silicon [MNOS] transistor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
- G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
- G11C14/0063—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is an EEPROM element, e.g. a floating gate or MNOS transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
- H01L27/1207—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Databases & Information Systems (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Thin Film Transistor (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017251543 | 2017-12-27 | ||
JP2017251748 | 2017-12-27 | ||
JP2018034751 | 2018-02-28 | ||
JP2018034758 | 2018-02-28 | ||
PCT/IB2018/059984 WO2019130144A1 (en) | 2017-12-27 | 2018-12-13 | Storage device |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202006092XA true SG11202006092XA (en) | 2020-07-29 |
Family
ID=67063274
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202006092XA SG11202006092XA (en) | 2017-12-27 | 2018-12-13 | Memory device |
Country Status (7)
Country | Link |
---|---|
US (1) | US11158371B2 (en) |
JP (3) | JP7142029B2 (en) |
KR (2) | KR102617170B1 (en) |
CN (1) | CN111542883A (en) |
DE (1) | DE112018006639T5 (en) |
SG (1) | SG11202006092XA (en) |
WO (1) | WO2019130144A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11411081B2 (en) * | 2020-04-22 | 2022-08-09 | Globalfoundries U.S. Inc. | Field effect transistor (FET) stack and methods to form same |
CN114121072B (en) | 2020-08-27 | 2023-12-12 | 长鑫存储技术有限公司 | Memory adjusting method, adjusting system and semiconductor device |
CN114121073B (en) * | 2020-08-27 | 2023-09-12 | 长鑫存储技术有限公司 | Memory adjusting method, adjusting system and semiconductor device |
CN114121096B (en) | 2020-08-27 | 2024-03-26 | 长鑫存储技术有限公司 | Memory adjusting method, adjusting system and semiconductor device |
CN114121058B (en) | 2020-08-27 | 2023-08-29 | 长鑫存储技术有限公司 | Memory adjusting method, adjusting system and semiconductor device |
US11955167B2 (en) * | 2021-01-14 | 2024-04-09 | Northwestern University | Computing-in-memory accelerator design with dynamic analog RAM cell and associated low power techniques with sparsity management |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000124418A (en) | 1998-10-16 | 2000-04-28 | Sony Corp | Semiconductor memory device |
JP2004335797A (en) * | 2003-05-08 | 2004-11-25 | Sharp Corp | Semiconductor storage device and its driving method, and portable electronic apparatus |
DE102004021051B3 (en) | 2004-04-29 | 2005-11-10 | Infineon Technologies Ag | DRAM memory cell arrangement and operating method |
US8331128B1 (en) * | 2008-12-02 | 2012-12-11 | Adesto Technologies Corporation | Reconfigurable memory arrays having programmable impedance elements and corresponding methods |
US8339837B2 (en) * | 2010-08-26 | 2012-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of semiconductor device |
KR102334169B1 (en) | 2010-08-27 | 2021-12-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Memory device and semiconductor device |
US9024317B2 (en) | 2010-12-24 | 2015-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device |
US9076505B2 (en) | 2011-12-09 | 2015-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Memory device |
US9208849B2 (en) * | 2012-04-12 | 2015-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for driving semiconductor device, and electronic device |
JP2014238902A (en) | 2013-06-10 | 2014-12-18 | ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. | Semiconductor device |
JP2015092423A (en) * | 2013-11-08 | 2015-05-14 | マイクロン テクノロジー, インク. | Semiconductor device |
US9716100B2 (en) | 2014-03-14 | 2017-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for driving semiconductor device, and electronic device |
CN106796918A (en) * | 2014-10-10 | 2017-05-31 | 株式会社半导体能源研究所 | Semiconductor device, circuit board and electronic equipment |
US9633710B2 (en) * | 2015-01-23 | 2017-04-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for operating semiconductor device |
US10096631B2 (en) | 2015-11-30 | 2018-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Signal processing circuit and semiconductor device including the signal processing circuit |
JP6811084B2 (en) | 2015-12-18 | 2021-01-13 | 株式会社半導体エネルギー研究所 | Semiconductor device |
US10115741B2 (en) | 2016-02-05 | 2018-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
JPWO2017158465A1 (en) | 2016-03-18 | 2019-02-14 | 株式会社半導体エネルギー研究所 | Storage device |
SG10201701689UA (en) | 2016-03-18 | 2017-10-30 | Semiconductor Energy Lab | Semiconductor device, semiconductor wafer, and electronic device |
JP2018049673A (en) * | 2016-09-20 | 2018-03-29 | 東芝メモリ株式会社 | Semiconductor memory device |
US10192871B2 (en) | 2016-09-23 | 2019-01-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
-
2018
- 2018-12-13 KR KR1020237013859A patent/KR102617170B1/en active IP Right Grant
- 2018-12-13 CN CN201880083912.6A patent/CN111542883A/en active Pending
- 2018-12-13 JP JP2019561384A patent/JP7142029B2/en active Active
- 2018-12-13 SG SG11202006092XA patent/SG11202006092XA/en unknown
- 2018-12-13 KR KR1020207021490A patent/KR102526637B1/en active IP Right Grant
- 2018-12-13 US US16/956,630 patent/US11158371B2/en active Active
- 2018-12-13 WO PCT/IB2018/059984 patent/WO2019130144A1/en active Application Filing
- 2018-12-13 DE DE112018006639.8T patent/DE112018006639T5/en active Pending
-
2022
- 2022-09-12 JP JP2022144465A patent/JP7390453B2/en active Active
-
2023
- 2023-11-20 JP JP2023196598A patent/JP2024028716A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
DE112018006639T5 (en) | 2020-09-10 |
JP7390453B2 (en) | 2023-12-01 |
WO2019130144A1 (en) | 2019-07-04 |
JP2024028716A (en) | 2024-03-05 |
KR20230058552A (en) | 2023-05-03 |
JPWO2019130144A1 (en) | 2021-01-14 |
US11158371B2 (en) | 2021-10-26 |
KR102526637B1 (en) | 2023-04-26 |
JP2022173276A (en) | 2022-11-18 |
KR20200103067A (en) | 2020-09-01 |
KR102617170B1 (en) | 2023-12-21 |
US20200402577A1 (en) | 2020-12-24 |
CN111542883A (en) | 2020-08-14 |
JP7142029B2 (en) | 2022-09-26 |
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