SG10201905122TA - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- SG10201905122TA SG10201905122TA SG10201905122TA SG10201905122TA SG10201905122TA SG 10201905122T A SG10201905122T A SG 10201905122TA SG 10201905122T A SG10201905122T A SG 10201905122TA SG 10201905122T A SG10201905122T A SG 10201905122TA SG 10201905122T A SG10201905122T A SG 10201905122TA
- Authority
- SG
- Singapore
- Prior art keywords
- memory device
- semiconductor memory
- semiconductor
- memory
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Semiconductor Memories (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- General Engineering & Computer Science (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020180076426A KR102557019B1 (en) | 2018-07-02 | 2018-07-02 | Semiconductor memory device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201905122TA true SG10201905122TA (en) | 2020-02-27 |
Family
ID=69008301
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201905122TA SG10201905122TA (en) | 2018-07-02 | 2019-06-06 | Semiconductor memory device |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10998318B2 (en) |
| JP (1) | JP6943922B2 (en) |
| KR (2) | KR102557019B1 (en) |
| CN (2) | CN110676255B (en) |
| SG (1) | SG10201905122TA (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102664275B1 (en) * | 2019-03-29 | 2024-05-09 | 에스케이하이닉스 주식회사 | Semiconductor device and method for fabricating the same |
| TWI710110B (en) * | 2019-11-19 | 2020-11-11 | 華邦電子股份有限公司 | Capacitor structure and method of manufacturing the same |
| EP3975233B1 (en) * | 2020-08-13 | 2024-06-12 | Changxin Memory Technologies, Inc. | Capacitor structure and manufacturing method therefor, and memory |
| CN115020408A (en) * | 2021-03-05 | 2022-09-06 | 长鑫存储技术有限公司 | Semiconductor structure and forming method thereof |
| US20220285481A1 (en) * | 2021-03-05 | 2022-09-08 | Changxin Memory Technologies, Inc. | Semiconductor structure and forming method thereof |
| CN116490060A (en) * | 2022-01-13 | 2023-07-25 | 长鑫存储技术有限公司 | Semiconductor structure and manufacturing method thereof |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05275649A (en) | 1992-01-31 | 1993-10-22 | Sharp Corp | Semiconductor storage device |
| KR100355239B1 (en) | 2000-12-26 | 2002-10-11 | 삼성전자 주식회사 | Semiconductor memory device having cylinder type capacitor and fabrication method thereof |
| US6784479B2 (en) * | 2002-06-05 | 2004-08-31 | Samsung Electronics Co., Ltd. | Multi-layer integrated circuit capacitor electrodes |
| US7067902B2 (en) | 2003-12-02 | 2006-06-27 | International Business Machines Corporation | Building metal pillars in a chip for structure support |
| KR100948092B1 (en) | 2006-12-27 | 2010-03-16 | 주식회사 하이닉스반도체 | Method for forming capacitor in semiconductor device |
| KR100891647B1 (en) * | 2007-02-01 | 2009-04-02 | 삼성전자주식회사 | Semiconductor device and method of forming the same |
| US7980145B2 (en) * | 2007-12-27 | 2011-07-19 | Y Point Capital, Inc | Microelectromechanical capacitive device |
| US7700469B2 (en) | 2008-02-26 | 2010-04-20 | Micron Technology, Inc. | Methods of forming semiconductor constructions |
| KR20090099775A (en) | 2008-03-18 | 2009-09-23 | 주식회사 하이닉스반도체 | Method for manufacturing capacitor with pillar type storagenode |
| KR101776284B1 (en) * | 2011-03-03 | 2017-09-20 | 삼성전자주식회사 | Methods of fabricating a semiconductor memory device |
| JP2012221965A (en) | 2011-04-04 | 2012-11-12 | Elpida Memory Inc | Semiconductor storage device and manufacturing method of the same |
| KR101893193B1 (en) | 2012-03-28 | 2018-08-29 | 삼성전자주식회사 | Semiconductor device |
| KR101934037B1 (en) * | 2012-11-21 | 2018-12-31 | 삼성전자주식회사 | Semiconductor device having supporter and method of forming the same |
| KR102367394B1 (en) * | 2015-06-15 | 2022-02-25 | 삼성전자주식회사 | Capacitor structure and semiconductor devices including the same |
| KR102279720B1 (en) * | 2015-06-24 | 2021-07-22 | 삼성전자주식회사 | Semiconductor device and method for manufacturing the same |
| KR20170011218A (en) * | 2015-07-22 | 2017-02-02 | 삼성전자주식회사 | Capacitor structures and methods of forming the same, and semiconductor devices including the same |
| KR102414612B1 (en) * | 2015-10-13 | 2022-07-01 | 삼성전자주식회사 | Semiconductor device and method for manufacturing the same |
| KR20170069347A (en) * | 2015-12-10 | 2017-06-21 | 삼성전자주식회사 | Method of fabricating a semiconductor device |
| KR102394250B1 (en) * | 2016-01-06 | 2022-05-03 | 삼성전자주식회사 | Semiconductor device and method for fabricating the same |
| KR102460564B1 (en) * | 2016-02-17 | 2022-11-01 | 삼성전자주식회사 | Semiconductor device |
| KR102406719B1 (en) * | 2016-12-09 | 2022-06-07 | 삼성전자주식회사 | Semiconductor device and method for fabricating the same |
| KR20180068584A (en) * | 2016-12-14 | 2018-06-22 | 삼성전자주식회사 | Semiconductor devices |
| CN207517691U (en) * | 2017-12-07 | 2018-06-19 | 睿力集成电路有限公司 | Array of capacitors structure |
| CN110289258B (en) * | 2018-03-19 | 2021-12-21 | 联华电子股份有限公司 | Semiconductor structure |
-
2018
- 2018-07-02 KR KR1020180076426A patent/KR102557019B1/en active IP Right Grant
-
2019
- 2019-01-25 US US16/257,260 patent/US10998318B2/en active Active
- 2019-06-06 SG SG10201905122TA patent/SG10201905122TA/en unknown
- 2019-06-26 CN CN201910559540.6A patent/CN110676255B/en active Active
- 2019-06-26 CN CN202311828228.5A patent/CN117915660A/en active Pending
- 2019-07-01 JP JP2019123049A patent/JP6943922B2/en active Active
-
2023
- 2023-07-13 KR KR1020230091076A patent/KR102652413B1/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| US20200006345A1 (en) | 2020-01-02 |
| CN117915660A (en) | 2024-04-19 |
| JP2020010031A (en) | 2020-01-16 |
| CN110676255B (en) | 2024-01-19 |
| KR102652413B1 (en) | 2024-03-29 |
| KR102557019B1 (en) | 2023-07-20 |
| KR20230109613A (en) | 2023-07-20 |
| JP6943922B2 (en) | 2021-10-06 |
| US10998318B2 (en) | 2021-05-04 |
| CN110676255A (en) | 2020-01-10 |
| KR20200003532A (en) | 2020-01-10 |
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