SG10202007886XA - Three-Dimensional Semiconductor Memory Device - Google Patents

Three-Dimensional Semiconductor Memory Device

Info

Publication number
SG10202007886XA
SG10202007886XA SG10202007886XA SG10202007886XA SG10202007886XA SG 10202007886X A SG10202007886X A SG 10202007886XA SG 10202007886X A SG10202007886X A SG 10202007886XA SG 10202007886X A SG10202007886X A SG 10202007886XA SG 10202007886X A SG10202007886X A SG 10202007886XA
Authority
SG
Singapore
Prior art keywords
memory device
semiconductor memory
dimensional semiconductor
dimensional
semiconductor
Prior art date
Application number
SG10202007886XA
Inventor
Shin Joongchan
Kim Changkyu
Kim Hui-Jung
Shin Iljae
An Taehyun
Lee Kiseok
Cho Eunju
Choi Hyungeun
Park Sung-Min
Lee Ahram
Han Sangyeon
Hwang Yoosang
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of SG10202007886XA publication Critical patent/SG10202007886XA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8221—Three dimensional integrated circuits stacked in different levels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H01L23/5283—Cross-sectional geometry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/488—Word lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
SG10202007886XA 2019-10-29 2020-08-18 Three-Dimensional Semiconductor Memory Device SG10202007886XA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020190135889A KR20210052660A (en) 2019-10-29 2019-10-29 Three-dimensional Semiconductor memory device

Publications (1)

Publication Number Publication Date
SG10202007886XA true SG10202007886XA (en) 2021-05-28

Family

ID=75378934

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10202007886XA SG10202007886XA (en) 2019-10-29 2020-08-18 Three-Dimensional Semiconductor Memory Device

Country Status (5)

Country Link
US (1) US11502084B2 (en)
KR (1) KR20210052660A (en)
CN (1) CN112750829A (en)
DE (1) DE102020116751A1 (en)
SG (1) SG10202007886XA (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11239238B2 (en) 2019-10-29 2022-02-01 Intel Corporation Thin film transistor based memory cells on both sides of a layer of logic devices
US11257822B2 (en) * 2019-11-21 2022-02-22 Intel Corporation Three-dimensional nanoribbon-based dynamic random-access memory
US11469232B2 (en) * 2021-02-09 2022-10-11 Micron Technology, Inc. Epitaxial silicon within horizontal access devices in vertical three dimensional (3D) memory
KR20220122293A (en) * 2021-02-26 2022-09-02 에스케이하이닉스 주식회사 Semiconductor dedvice and method for fabricating the same
KR20230038342A (en) * 2021-09-10 2023-03-20 삼성전자주식회사 Semiconductor memory device and manufacturing method of the same
CN116997178A (en) * 2022-04-24 2023-11-03 长鑫存储技术有限公司 Semiconductor structure and forming method thereof
CN116234306B (en) * 2022-05-31 2024-02-20 北京超弦存储器研究院 Field effect transistor, memory, preparation method of memory and electronic equipment
CN117334722A (en) * 2022-06-21 2024-01-02 长鑫存储技术有限公司 Semiconductor device and method of forming the same
CN115332255A (en) * 2022-08-29 2022-11-11 长鑫存储技术有限公司 Semiconductor structure, manufacturing method thereof and memory array structure
CN116761423B (en) * 2023-02-08 2024-03-01 北京超弦存储器研究院 3D stacked semiconductor device, manufacturing method thereof, 3D memory and electronic equipment
CN116322041B (en) * 2023-04-13 2023-11-24 北京超弦存储器研究院 Memory, manufacturing method thereof and electronic equipment

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8564057B1 (en) * 2007-01-09 2013-10-22 Maxpower Semiconductor, Inc. Power devices, structures, components, and methods using lateral drift, fixed net charge, and shield
US11018133B2 (en) * 2009-10-12 2021-05-25 Monolithic 3D Inc. 3D integrated circuit
US10354995B2 (en) * 2009-10-12 2019-07-16 Monolithic 3D Inc. Semiconductor memory device and structure
US8890233B2 (en) 2010-07-06 2014-11-18 Macronix International Co., Ltd. 3D memory array with improved SSL and BL contact layout
US9281044B2 (en) 2013-05-17 2016-03-08 Micron Technology, Inc. Apparatuses having a ferroelectric field-effect transistor memory array and related method
US9230985B1 (en) * 2014-10-15 2016-01-05 Sandisk 3D Llc Vertical TFT with tunnel barrier
US9490017B2 (en) * 2015-03-10 2016-11-08 Macronix International Co., Ltd. Forced-bias method in sub-block erase
US9419003B1 (en) 2015-05-15 2016-08-16 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of manufacture thereof
US9653617B2 (en) * 2015-05-27 2017-05-16 Sandisk Technologies Llc Multiple junction thin film transistor
CN115942752A (en) 2015-09-21 2023-04-07 莫诺利特斯3D有限公司 3D semiconductor device and structure
US10121553B2 (en) 2015-09-30 2018-11-06 Sunrise Memory Corporation Capacitive-coupled non-volatile thin-film transistor NOR strings in three-dimensional arrays
WO2018044456A1 (en) 2016-08-31 2018-03-08 Micron Technology, Inc. Memory cells and memory arrays
US10692874B2 (en) 2017-06-20 2020-06-23 Sunrise Memory Corporation 3-dimensional NOR string arrays in segmented stacks
EP3646379A4 (en) 2017-06-29 2020-07-01 Micron Technology, Inc. Memory arrays comprising vertically-alternating tiers of insulative material and memory cells and methods of forming a memory array comprising memory cells individually comprising a transistor and a capacitor
US10867675B2 (en) 2017-07-13 2020-12-15 Micron Technology, Inc. Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells
US10636796B2 (en) 2017-08-02 2020-04-28 Winbond Electronics Corp. Dynamic random access memory and method of fabricating the same
US10535659B2 (en) 2017-09-29 2020-01-14 Samsung Electronics Co., Ltd. Semiconductor memory devices
KR102524614B1 (en) 2017-11-24 2023-04-24 삼성전자주식회사 Semiconductor memory device
KR102484394B1 (en) 2017-12-06 2023-01-03 삼성전자주식회사 Semiconductor devices
US10468414B2 (en) * 2017-12-28 2019-11-05 Samsung Electronics Co., Ltd. Semiconductor memory devices
CN110660822A (en) * 2018-06-29 2020-01-07 三星电子株式会社 Variable resistance memory device
KR102650525B1 (en) * 2018-08-03 2024-03-25 삼성전자주식회사 Semiconductor memory device
KR20210002775A (en) 2019-06-27 2021-01-11 삼성전자주식회사 Semiconductor memory device

Also Published As

Publication number Publication date
US11502084B2 (en) 2022-11-15
US20210125989A1 (en) 2021-04-29
CN112750829A (en) 2021-05-04
KR20210052660A (en) 2021-05-11
DE102020116751A1 (en) 2021-04-29

Similar Documents

Publication Publication Date Title
SG10202007886XA (en) Three-Dimensional Semiconductor Memory Device
SG10202004453RA (en) Three-Dimensional Semiconductor Memory Device
EP3827432C0 (en) Three-dimensional ferroelectric memory devices
SG10202004477SA (en) Three-dimensional semiconductor memory device
EP3673484A4 (en) Semiconductor memory device
SG11201802573UA (en) Semiconductor memory device
SG10201907485UA (en) Three-dimensional semiconductor device
SG10202008178YA (en) Semiconductor Memory Devices
SG10202001607VA (en) Semiconductor device
SG10201905122TA (en) Semiconductor memory device
SG10201906732VA (en) Three dimensional semiconductor memory devices
SG10201909445RA (en) Semiconductor memory device
IL254101A0 (en) Semiconductor memory device
TWI560856B (en) Semiconductor memory device
SG10201905607UA (en) Semiconductor device
SG11202011551QA (en) Memory device
SG11202006092XA (en) Memory device
SG10202003846SA (en) Three-Dimensional Semiconductor Devices
SG11202102625VA (en) Semiconductor memory device
SG10202003517XA (en) Memory device
SG10201905606YA (en) Semiconductor device
SG10201906019QA (en) Semiconductor Device
SG10201911466SA (en) Semiconductor memory devices
SG10202006115RA (en) Vertical memory device
SG11202008495TA (en) Semiconductor memory device