SG10201905767SA - Nonvolatile memory devices and methods of operating a nonvolatile memory - Google Patents

Nonvolatile memory devices and methods of operating a nonvolatile memory

Info

Publication number
SG10201905767SA
SG10201905767SA SG10201905767SA SG10201905767SA SG10201905767SA SG 10201905767S A SG10201905767S A SG 10201905767SA SG 10201905767S A SG10201905767S A SG 10201905767SA SG 10201905767S A SG10201905767S A SG 10201905767SA SG 10201905767S A SG10201905767S A SG 10201905767SA
Authority
SG
Singapore
Prior art keywords
nonvolatile memory
operating
methods
memory devices
devices
Prior art date
Application number
SG10201905767SA
Inventor
Kim Seung-Bum
Park Il-Han
Lee Ji-Young
Jeon Su-Chang
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of SG10201905767SA publication Critical patent/SG10201905767SA/en

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1048—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using arrangements adapted for a specific error detection or correction feature
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/0802—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
    • G06F12/0877—Cache access modes
    • G06F12/0882—Page mode
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5671—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge trapping in an insulator
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/52—Protection of memory contents; Detection of errors in memory contents
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G11C11/5635—Erasing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C2029/0409—Online test
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C2029/0411—Online error correction

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Quality & Reliability (AREA)
  • Read Only Memory (AREA)
SG10201905767SA 2018-09-21 2019-06-21 Nonvolatile memory devices and methods of operating a nonvolatile memory SG10201905767SA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020180113427A KR102658792B1 (en) 2018-09-21 2018-09-21 Nonvolatile memory devices and methods of operating nonvolatile memory devices

Publications (1)

Publication Number Publication Date
SG10201905767SA true SG10201905767SA (en) 2020-04-29

Family

ID=69885675

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201905767SA SG10201905767SA (en) 2018-09-21 2019-06-21 Nonvolatile memory devices and methods of operating a nonvolatile memory

Country Status (4)

Country Link
US (1) US10937508B2 (en)
KR (1) KR102658792B1 (en)
CN (1) CN110942796A (en)
SG (1) SG10201905767SA (en)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102675131B1 (en) * 2018-11-09 2024-06-13 삼성전자주식회사 Storage Device and operating method of storage device
KR20210068902A (en) * 2019-12-02 2021-06-10 에스케이하이닉스 주식회사 Memory device and operating method thereof
JP7025472B2 (en) 2020-04-20 2022-02-24 ウィンボンド エレクトロニクス コーポレーション Semiconductor device
TWI744915B (en) * 2020-05-26 2021-11-01 華邦電子股份有限公司 Semiconductor apparatus and readout method
KR20210155432A (en) * 2020-06-15 2021-12-23 삼성전자주식회사 Nonvolatile Memory Device and Operating Method thereof
TWI746023B (en) * 2020-06-22 2021-11-11 旺宏電子股份有限公司 Memory device and reading method thereof
KR20220003705A (en) 2020-07-02 2022-01-11 삼성전자주식회사 Controller, storage device having the same, and reading method thereof
KR20220012435A (en) 2020-07-22 2022-02-04 삼성전자주식회사 Non-volatile memory device, operating method thereof, controller for controlling the same, and storage device having the same
KR20220029233A (en) * 2020-09-01 2022-03-08 삼성전자주식회사 Page buffer circuit and memory device including the same
US11430531B2 (en) * 2020-09-08 2022-08-30 Western Digital Technologies, Inc. Read integration time calibration for non-volatile storage
KR20220037618A (en) * 2020-09-18 2022-03-25 삼성전자주식회사 Storage device performing read operation by using time interleaved sampling page buffer
KR20220048367A (en) * 2020-10-12 2022-04-19 에스케이하이닉스 주식회사 Memory device and operating method thereof
KR20220054493A (en) * 2020-10-23 2022-05-03 삼성전자주식회사 Non-volatile memory device, storage device having the same, and reading method threfof
KR20220056919A (en) 2020-10-28 2022-05-09 삼성전자주식회사 Non-volatile memory device, controller for controlling the ame, storage device having the same, and reading method thereof
KR20220058753A (en) 2020-10-30 2022-05-10 삼성전자주식회사 Non-volatile memory device, storage device having the same, and reading method thereof
KR20220058278A (en) 2020-10-30 2022-05-09 삼성전자주식회사 Nonvolatile memory device, memory system comprising thereof and operating method of nonvolatile memory device
KR20220060572A (en) 2020-11-04 2022-05-12 삼성전자주식회사 Non-volatile memory device, controller for controlling the ame, storage device having the same, and reading method thereof
CN112735497A (en) * 2020-12-31 2021-04-30 普冉半导体(上海)股份有限公司 Word line establishing method
KR20220103228A (en) 2021-01-14 2022-07-22 삼성전자주식회사 Memory controller, memory device and storage device
KR20220109766A (en) 2021-01-29 2022-08-05 삼성전자주식회사 Nonvolatile memory device for improving reliability of data detected through page buffer
KR20220122826A (en) * 2021-02-26 2022-09-05 삼성전자주식회사 Nonvolatile memory device, memory controller, and method of reading of storage device comprising the same
US11468953B2 (en) 2021-03-10 2022-10-11 Western Digital Technologies, Inc. Dynamic valley searching in solid state drives
KR102344380B1 (en) 2021-06-02 2021-12-28 삼성전자주식회사 Nonvolatile memory device, controller for controlling the same, storage device having the same, and operating method thereof
CN113553213B (en) * 2021-07-14 2022-11-04 长江存储科技有限责任公司 Data reading method of storage unit, memory, storage system and storage medium
KR102491652B1 (en) * 2021-09-17 2023-01-27 삼성전자주식회사 Storage controller determining a distribution type, method of operating the same, and method of operating storage device having the same
KR102491655B1 (en) 2021-10-01 2023-01-27 삼성전자주식회사 Storage controller determining an error count, method of operating the same, and method of operating storage device having the same

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101098431B1 (en) * 2009-12-31 2011-12-26 주식회사 하이닉스반도체 Method of operation a semiconductor memory device
US8099652B1 (en) 2010-12-23 2012-01-17 Sandisk Corporation Non-volatile memory and methods with reading soft bits in non uniform schemes
KR101739431B1 (en) * 2010-12-30 2017-05-26 에스케이하이닉스 주식회사 Semiconductor memory device and method of operating the same
US9036417B2 (en) 2012-09-06 2015-05-19 Sandisk Technologies Inc. On chip dynamic read level scan and error detection for nonvolatile storage
KR20140072637A (en) 2012-12-05 2014-06-13 삼성전자주식회사 method for operating non-volatile memory device and memory controller
KR101429184B1 (en) 2013-09-12 2014-08-12 주식회사 디에이아이오 Method of adjusting read voltages for a nand flash memory device
KR102174030B1 (en) * 2014-05-13 2020-11-05 삼성전자주식회사 Storage device including nonvolatile memory device and read method thereof
KR20160051328A (en) 2014-11-03 2016-05-11 에스케이하이닉스 주식회사 Data recovery method and nonvolatile memory system using the same
KR102251815B1 (en) * 2015-07-02 2021-05-13 삼성전자주식회사 Memory device and Memory system
KR102412781B1 (en) 2015-11-03 2022-06-24 삼성전자주식회사 Non-volatile memory device and method of reading non-volatile memory device
KR102391514B1 (en) * 2015-11-04 2022-04-27 삼성전자주식회사 Memory device and method of operating memory device
KR102435027B1 (en) 2015-11-09 2022-08-23 삼성전자주식회사 Nonvolatile memory device and read method thereof
KR20170058066A (en) 2015-11-18 2017-05-26 에스케이하이닉스 주식회사 Data storage device and operating method thereof
KR102461447B1 (en) 2016-01-15 2022-11-02 삼성전자주식회사 Nonvolatile memory system
KR102609130B1 (en) 2016-02-17 2023-12-05 삼성전자주식회사 Data storage device including read voltage search unit
KR20180053063A (en) * 2016-11-11 2018-05-21 에스케이하이닉스 주식회사 Semiconductor memory device
KR102663813B1 (en) 2017-01-13 2024-05-07 삼성전자주식회사 Non-volatile memory device for reading operation with optimized read voltage
KR102302187B1 (en) * 2017-03-13 2021-09-14 삼성전자주식회사 Methods of operating nonvolatile memory devices and nonvolatile memory devices

Also Published As

Publication number Publication date
US10937508B2 (en) 2021-03-02
KR20200034123A (en) 2020-03-31
US20200098436A1 (en) 2020-03-26
KR102658792B1 (en) 2024-04-18
CN110942796A (en) 2020-03-31

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