SG10202007030PA - Semiconductor Memory Devices And Methods Of Operating The Semiconductor Memory Devices - Google Patents
Semiconductor Memory Devices And Methods Of Operating The Semiconductor Memory DevicesInfo
- Publication number
- SG10202007030PA SG10202007030PA SG10202007030PA SG10202007030PA SG10202007030PA SG 10202007030P A SG10202007030P A SG 10202007030PA SG 10202007030P A SG10202007030P A SG 10202007030PA SG 10202007030P A SG10202007030P A SG 10202007030PA SG 10202007030P A SG10202007030P A SG 10202007030PA
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor memory
- memory devices
- operating
- methods
- devices
- Prior art date
Links
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020190151829A KR20210063561A (en) | 2019-11-25 | 2019-11-25 | Semiconductor memory devices and methods of operating the same |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10202007030PA true SG10202007030PA (en) | 2021-06-29 |
Family
ID=75784808
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10202007030PA SG10202007030PA (en) | 2019-11-25 | 2020-07-22 | Semiconductor Memory Devices And Methods Of Operating The Semiconductor Memory Devices |
Country Status (5)
Country | Link |
---|---|
US (1) | US11393519B2 (en) |
KR (1) | KR20210063561A (en) |
CN (1) | CN112837725A (en) |
DE (1) | DE102020115736A1 (en) |
SG (1) | SG10202007030PA (en) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10580475B2 (en) | 2018-01-22 | 2020-03-03 | Micron Technology, Inc. | Apparatuses and methods for calculating row hammer refresh addresses in a semiconductor device |
US11152050B2 (en) | 2018-06-19 | 2021-10-19 | Micron Technology, Inc. | Apparatuses and methods for multiple row hammer refresh address sequences |
US10770127B2 (en) * | 2019-02-06 | 2020-09-08 | Micron Technology, Inc. | Apparatuses and methods for managing row access counts |
US11043254B2 (en) | 2019-03-19 | 2021-06-22 | Micron Technology, Inc. | Semiconductor device having cam that stores address signals |
US11264096B2 (en) | 2019-05-14 | 2022-03-01 | Micron Technology, Inc. | Apparatuses, systems, and methods for a content addressable memory cell with latch and comparator circuits |
US11158364B2 (en) | 2019-05-31 | 2021-10-26 | Micron Technology, Inc. | Apparatuses and methods for tracking victim rows |
US11158373B2 (en) | 2019-06-11 | 2021-10-26 | Micron Technology, Inc. | Apparatuses, systems, and methods for determining extremum numerical values |
US11139015B2 (en) | 2019-07-01 | 2021-10-05 | Micron Technology, Inc. | Apparatuses and methods for monitoring word line accesses |
US10832792B1 (en) | 2019-07-01 | 2020-11-10 | Micron Technology, Inc. | Apparatuses and methods for adjusting victim data |
US11386946B2 (en) | 2019-07-16 | 2022-07-12 | Micron Technology, Inc. | Apparatuses and methods for tracking row accesses |
US10943636B1 (en) | 2019-08-20 | 2021-03-09 | Micron Technology, Inc. | Apparatuses and methods for analog row access tracking |
US10964378B2 (en) | 2019-08-22 | 2021-03-30 | Micron Technology, Inc. | Apparatus and method including analog accumulator for determining row access rate and target row address used for refresh operation |
US11200942B2 (en) | 2019-08-23 | 2021-12-14 | Micron Technology, Inc. | Apparatuses and methods for lossy row access counting |
KR20210063561A (en) * | 2019-11-25 | 2021-06-02 | 삼성전자주식회사 | Semiconductor memory devices and methods of operating the same |
US11740970B2 (en) | 2020-03-02 | 2023-08-29 | Micron Technology, Inc. | Dynamic adjustment of data integrity operations of a memory system based on error rate classification |
US11403010B2 (en) * | 2020-08-19 | 2022-08-02 | Silicon Motion, Inc. | Data storage device and plane selection method thereof |
US11222682B1 (en) | 2020-08-31 | 2022-01-11 | Micron Technology, Inc. | Apparatuses and methods for providing refresh addresses |
US11462291B2 (en) | 2020-11-23 | 2022-10-04 | Micron Technology, Inc. | Apparatuses and methods for tracking word line accesses |
US11830545B2 (en) | 2020-12-16 | 2023-11-28 | Micron Technology, Inc. | Data programming techniques to store multiple bits of data per memory cell with high reliability |
US11482275B2 (en) | 2021-01-20 | 2022-10-25 | Micron Technology, Inc. | Apparatuses and methods for dynamically allocated aggressor detection |
JP2022118299A (en) * | 2021-02-02 | 2022-08-15 | キオクシア株式会社 | memory system |
US11600314B2 (en) | 2021-03-15 | 2023-03-07 | Micron Technology, Inc. | Apparatuses and methods for sketch circuits for refresh binning |
CN117642823A (en) * | 2021-07-14 | 2024-03-01 | 美光科技公司 | Selective and dynamic deployment of error correction code techniques in integrated circuit memory devices |
US11869570B2 (en) * | 2021-08-09 | 2024-01-09 | Changxin Memory Technologies, Inc. | Refresh counter circuit, refresh counting method and semiconductor memory |
US11664063B2 (en) | 2021-08-12 | 2023-05-30 | Micron Technology, Inc. | Apparatuses and methods for countering memory attacks |
US11853617B2 (en) * | 2021-09-07 | 2023-12-26 | Micron Technology, Inc. | Managing write disturb based on identification of frequently-written memory units |
US11688451B2 (en) | 2021-11-29 | 2023-06-27 | Micron Technology, Inc. | Apparatuses, systems, and methods for main sketch and slim sketch circuit for row address tracking |
US11621052B1 (en) * | 2021-12-13 | 2023-04-04 | Nanya Technology Corporation | Method for testing memory device and test system |
CN114049905B (en) * | 2021-12-16 | 2024-04-09 | 西安紫光国芯半导体有限公司 | Nonvolatile three-dimensional memory unit, memory method, chip assembly and electronic device |
CN115662361A (en) * | 2022-11-01 | 2023-01-31 | 武汉华星光电技术有限公司 | Display device |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4707803B2 (en) | 2000-07-10 | 2011-06-22 | エルピーダメモリ株式会社 | Error rate determination method and semiconductor integrated circuit device |
JP4768374B2 (en) * | 2005-09-16 | 2011-09-07 | 株式会社東芝 | Semiconductor memory device |
KR100714487B1 (en) | 2005-11-29 | 2007-05-07 | 삼성전자주식회사 | Dynamic random access memory and a refresh cycle settlement method for the same |
FR2903219A1 (en) * | 2006-07-03 | 2008-01-04 | St Microelectronics Sa | METHOD FOR REFRESHING A DYNAMIC RANDOM MEMORY AND DYNAMIC CORRESPONDING LIVE MEMORY DEVICE, PARTICULARLY INCORPORATED IN A CELLULAR MOBILE TELEPHONE |
US9953725B2 (en) | 2012-02-29 | 2018-04-24 | Samsung Electronics Co., Ltd. | Semiconductor memory devices and methods of operating the same |
KR102076584B1 (en) | 2012-10-22 | 2020-04-07 | 삼성전자주식회사 | Device and method of repairing memory cell and memory system including the same |
US9087613B2 (en) | 2012-02-29 | 2015-07-21 | Samsung Electronics Co., Ltd. | Device and method for repairing memory cell and memory system including the device |
US9368187B2 (en) * | 2013-07-11 | 2016-06-14 | Qualcomm Incorporated | Insertion-override counter to support multiple memory refresh rates |
US9685217B2 (en) | 2013-07-22 | 2017-06-20 | Taiwan Semiconductor Manufacturing Company Ltd. | Memory device with over-refresh and method thereof |
JP2016024837A (en) | 2014-07-22 | 2016-02-08 | マイクロン テクノロジー, インク. | Semiconductor device |
KR20160056056A (en) * | 2014-11-11 | 2016-05-19 | 삼성전자주식회사 | Semiconductor memory device and memory system including the same |
KR101773660B1 (en) | 2015-02-13 | 2017-09-12 | 포항공과대학교 산학협력단 | Memory apparatus and system, and memory control method using selective refresh through in-meomry error detection |
US9836349B2 (en) * | 2015-05-29 | 2017-12-05 | Winbond Electronics Corp. | Methods and systems for detecting and correcting errors in nonvolatile memory |
KR102435181B1 (en) * | 2015-11-16 | 2022-08-23 | 삼성전자주식회사 | Semiconductor memory device, memory system including the same and method of operating memory system |
KR102402406B1 (en) * | 2016-03-17 | 2022-05-27 | 에스케이하이닉스 주식회사 | Semiconductor device |
US10614906B2 (en) * | 2016-09-21 | 2020-04-07 | Samsung Electronics Co., Ltd. | Semiconductor memory devices, memory systems and methods of operating semiconductor memory devices |
KR20180129233A (en) | 2017-05-26 | 2018-12-05 | 에스케이하이닉스 주식회사 | Semiconductor device controlling refresh operation and memory system including the same |
KR102350957B1 (en) | 2017-10-26 | 2022-01-14 | 에스케이하이닉스 주식회사 | Memory system and method of controlling refresh of the memory system |
KR102408867B1 (en) * | 2017-12-20 | 2022-06-14 | 삼성전자주식회사 | Semiconductor memory device, memory system and method of operating a semiconductor memory device |
KR20210063561A (en) * | 2019-11-25 | 2021-06-02 | 삼성전자주식회사 | Semiconductor memory devices and methods of operating the same |
-
2019
- 2019-11-25 KR KR1020190151829A patent/KR20210063561A/en active Search and Examination
-
2020
- 2020-06-15 US US16/901,125 patent/US11393519B2/en active Active
- 2020-06-15 DE DE102020115736.3A patent/DE102020115736A1/en active Pending
- 2020-07-22 SG SG10202007030PA patent/SG10202007030PA/en unknown
- 2020-09-03 CN CN202010915165.7A patent/CN112837725A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
US11393519B2 (en) | 2022-07-19 |
KR20210063561A (en) | 2021-06-02 |
DE102020115736A1 (en) | 2021-05-27 |
US20210158861A1 (en) | 2021-05-27 |
CN112837725A (en) | 2021-05-25 |
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