DE602006012825D1 - Phasenwechsel-Speichervorrichtung - Google Patents

Phasenwechsel-Speichervorrichtung

Info

Publication number
DE602006012825D1
DE602006012825D1 DE602006012825T DE602006012825T DE602006012825D1 DE 602006012825 D1 DE602006012825 D1 DE 602006012825D1 DE 602006012825 T DE602006012825 T DE 602006012825T DE 602006012825 T DE602006012825 T DE 602006012825T DE 602006012825 D1 DE602006012825 D1 DE 602006012825D1
Authority
DE
Germany
Prior art keywords
memory device
phase change
change memory
phase
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006012825T
Other languages
English (en)
Inventor
Fabio Pellizzer
Roberto Bez
Ferdinando Bedeschi
Roberto Gastaldi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Publication of DE602006012825D1 publication Critical patent/DE602006012825D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H10B63/24—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the Ovonic threshold switching type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0054—Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
DE602006012825T 2006-07-27 2006-07-27 Phasenwechsel-Speichervorrichtung Active DE602006012825D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP06425531A EP1883113B1 (de) 2006-07-27 2006-07-27 Phasenwechsel-Speichervorrichtung

Publications (1)

Publication Number Publication Date
DE602006012825D1 true DE602006012825D1 (de) 2010-04-22

Family

ID=37667678

Family Applications (2)

Application Number Title Priority Date Filing Date
DE602006012825T Active DE602006012825D1 (de) 2006-07-27 2006-07-27 Phasenwechsel-Speichervorrichtung
DE112007001750T Withdrawn DE112007001750T5 (de) 2006-07-27 2007-07-26 Phasenwechselspeicherbauelement

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE112007001750T Withdrawn DE112007001750T5 (de) 2006-07-27 2007-07-26 Phasenwechselspeicherbauelement

Country Status (7)

Country Link
US (4) US8553453B2 (de)
EP (1) EP1883113B1 (de)
JP (1) JP5172836B2 (de)
KR (1) KR101390456B1 (de)
CN (1) CN101443914B (de)
DE (2) DE602006012825D1 (de)
WO (1) WO2008012342A1 (de)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE602006012825D1 (de) 2006-07-27 2010-04-22 St Microelectronics Srl Phasenwechsel-Speichervorrichtung
US7936593B2 (en) * 2008-04-08 2011-05-03 Ovonyx, Inc. Reducing drift in chalcogenide devices
US8228719B2 (en) * 2008-06-06 2012-07-24 Ovonyx, Inc. Thin film input/output
US7936590B2 (en) * 2008-12-08 2011-05-03 Qualcomm Incorporated Digitally-controllable delay for sense amplifier
WO2010076834A1 (en) 2008-12-31 2010-07-08 Ferdinando Bedeschi Reliable set operation for phase-change memory cell
US8374022B2 (en) * 2009-12-21 2013-02-12 Intel Corporation Programming phase change memories using ovonic threshold switches
US8847186B2 (en) * 2009-12-31 2014-09-30 Micron Technology, Inc. Self-selecting PCM device not requiring a dedicated selector transistor
US8194441B2 (en) * 2010-09-23 2012-06-05 Micron Technology, Inc. Phase change memory state determination using threshold edge detection
US8649212B2 (en) * 2010-09-24 2014-02-11 Intel Corporation Method, apparatus and system to determine access information for a phase change memory
US8467237B2 (en) * 2010-10-15 2013-06-18 Micron Technology, Inc. Read distribution management for phase change memory
US8909849B2 (en) * 2010-11-15 2014-12-09 Intel Corporation Pipeline architecture for scalable performance on memory
US8486743B2 (en) 2011-03-23 2013-07-16 Micron Technology, Inc. Methods of forming memory cells
WO2013039496A1 (en) 2011-09-14 2013-03-21 Intel Corporation Electrodes for resistance change memory devices
KR20130033018A (ko) * 2011-09-26 2013-04-03 에스케이하이닉스 주식회사 디스터번스를 줄일 수 있는 반도체 집적 회로 시스템 및 그 구동방법
US8994489B2 (en) 2011-10-19 2015-03-31 Micron Technology, Inc. Fuses, and methods of forming and using fuses
US8723155B2 (en) 2011-11-17 2014-05-13 Micron Technology, Inc. Memory cells and integrated devices
US9252188B2 (en) 2011-11-17 2016-02-02 Micron Technology, Inc. Methods of forming memory cells
US8546231B2 (en) 2011-11-17 2013-10-01 Micron Technology, Inc. Memory arrays and methods of forming memory cells
US8680499B2 (en) 2012-01-23 2014-03-25 Micron Technology, Inc. Memory cells
US9136467B2 (en) 2012-04-30 2015-09-15 Micron Technology, Inc. Phase change memory cells and methods of forming phase change memory cells
US8765555B2 (en) 2012-04-30 2014-07-01 Micron Technology, Inc. Phase change memory cells and methods of forming phase change memory cells
US20140063931A1 (en) * 2012-08-28 2014-03-06 Being Advanced Memory Corporation Multibit phase-change memory with multiple reference columns
US9281061B2 (en) * 2012-09-19 2016-03-08 Micron Technology, Inc. Methods and apparatuses having a voltage generator with an adjustable voltage drop for representing a voltage drop of a memory cell and/or a current mirror circuit and replica circuit
US8861736B2 (en) * 2012-11-19 2014-10-14 International Business Machines Corporation Reliable physical unclonable function for device authentication
US8988926B2 (en) 2013-01-11 2015-03-24 Micron Technology, Inc. Method, system and device for phase change memory with shunt
US9553262B2 (en) 2013-02-07 2017-01-24 Micron Technology, Inc. Arrays of memory cells and methods of forming an array of memory cells
JP6151650B2 (ja) * 2014-01-17 2017-06-21 ソニーセミコンダクタソリューションズ株式会社 記憶装置
US9881971B2 (en) 2014-04-01 2018-01-30 Micron Technology, Inc. Memory arrays
US9362494B2 (en) 2014-06-02 2016-06-07 Micron Technology, Inc. Array of cross point memory cells and methods of forming an array of cross point memory cells
US9343506B2 (en) 2014-06-04 2016-05-17 Micron Technology, Inc. Memory arrays with polygonal memory cells having specific sidewall orientations
US9911491B2 (en) * 2014-07-31 2018-03-06 Hewlett Packard Enterprise Development Lp Determining a resistance state of a cell in a crossbar memory array
FR3029342B1 (fr) * 2014-12-01 2018-01-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Circuit de lecture pour memoire resistive
US9543004B1 (en) 2015-06-17 2017-01-10 Intel Corporation Provision of holding current in non-volatile random access memory
JP6538497B2 (ja) * 2015-09-11 2019-07-03 株式会社東芝 半導体集積回路
US9478286B1 (en) * 2015-12-26 2016-10-25 Intel Corporation Transient current-protected threshold switching devices systems and methods
US10192616B2 (en) * 2016-06-28 2019-01-29 Western Digital Technologies, Inc. Ovonic threshold switch (OTS) driver/selector uses unselect bias to pre-charge memory chip circuit and reduces unacceptable false selects
US10559752B2 (en) * 2016-12-05 2020-02-11 Samsung Electronics Co., Ltd. Semiconductor device and method for fabricating the same
KR102619682B1 (ko) * 2016-12-13 2023-12-28 삼성전자주식회사 메모리 장치 및 그 동작 방법
US10395733B2 (en) 2017-12-21 2019-08-27 Macronix International Co., Ltd. Forming structure and method for integrated circuit memory
US11082241B2 (en) * 2018-03-30 2021-08-03 Intel Corporation Physically unclonable function with feed-forward addressing and variable latency output
US10424372B1 (en) * 2018-04-19 2019-09-24 Micron Technology, Inc. Apparatuses and methods for sensing memory cells
WO2019244417A1 (ja) * 2018-06-22 2019-12-26 ソニーセミコンダクタソリューションズ株式会社 記憶制御装置、記憶装置および記憶制御方法
US11769046B2 (en) * 2019-03-14 2023-09-26 International Business Machines Corporation Symmetric phase-change memory devices
US10903422B2 (en) 2019-04-11 2021-01-26 International Business Machines Corporation Vertically oriented memory structure
FR3096827A1 (fr) * 2019-05-28 2020-12-04 Stmicroelectronics (Crolles 2) Sas Mémoire à changement de phase
KR102632690B1 (ko) * 2019-06-13 2024-02-01 삼성전자주식회사 비휘발성 메모리 장치 및 그 프로그램 방법
US11004508B2 (en) 2019-08-30 2021-05-11 Sandisk Technologies Llc One selector one resistor RAM threshold voltage drift and offset voltage compensation methods
KR20210058568A (ko) * 2019-11-14 2021-05-24 삼성전자주식회사 비트라인 전압을 제어하는 저항성 메모리 장치
US11139025B2 (en) 2020-01-22 2021-10-05 International Business Machines Corporation Multi-level cell threshold voltage operation of one-selector-one-resistor structure included in a crossbar array
US11087854B1 (en) * 2020-03-05 2021-08-10 Intel Corporation High current fast read scheme for crosspoint memory
US11665983B2 (en) 2020-12-11 2023-05-30 International Business Machines Corporation Phase change memory cell with ovonic threshold switch
CN112699628B (zh) * 2020-12-29 2022-04-12 华中科技大学 一种三维相变存储器的ots+pcm单元模拟系统
US11990182B2 (en) * 2021-06-24 2024-05-21 Taiwan Semiconductor Manufacturing Company, Ltd. Operation methods for ovonic threshold selector, memory device and memory array

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3271591A (en) * 1963-09-20 1966-09-06 Energy Conversion Devices Inc Symmetrical current controlling device
US3573757A (en) 1968-11-04 1971-04-06 Energy Conversion Devices Inc Memory matrix having serially connected threshold and memory switch devices at each cross-over point
CA1322258C (en) 1988-01-19 1993-09-14 Thomas S. Buzak Apparatus for and methods of addressing data storage elements
US5825046A (en) * 1996-10-28 1998-10-20 Energy Conversion Devices, Inc. Composite memory material comprising a mixture of phase-change memory material and dielectric material
US5912839A (en) * 1998-06-23 1999-06-15 Energy Conversion Devices, Inc. Universal memory element and method of programming same
US6490203B1 (en) 2001-05-24 2002-12-03 Edn Silicon Devices, Inc. Sensing scheme of flash EEPROM
US6590807B2 (en) * 2001-08-02 2003-07-08 Intel Corporation Method for reading a structural phase-change memory
DE60137788D1 (de) 2001-12-27 2009-04-09 St Microelectronics Srl Architektur einer nichtflüchtigen Phasenwechsel -Speichermatrix
EP1450373B1 (de) * 2003-02-21 2008-08-27 STMicroelectronics S.r.l. Phasenwechselspeicheranordnung
JP4218527B2 (ja) * 2002-02-01 2009-02-04 株式会社日立製作所 記憶装置
JP4049604B2 (ja) * 2002-04-03 2008-02-20 株式会社ルネサステクノロジ 薄膜磁性体記憶装置
JP2004062922A (ja) * 2002-07-25 2004-02-26 Renesas Technology Corp 不揮発性半導体記憶装置
JP4113423B2 (ja) * 2002-12-04 2008-07-09 シャープ株式会社 半導体記憶装置及びリファレンスセルの補正方法
US6965521B2 (en) * 2003-07-31 2005-11-15 Bae Systems, Information And Electronics Systems Integration, Inc. Read/write circuit for accessing chalcogenide non-volatile memory cells
US6914255B2 (en) * 2003-08-04 2005-07-05 Ovonyx, Inc. Phase change access device for memories
EP1511042B1 (de) * 2003-08-27 2012-12-05 STMicroelectronics Srl Phasenübergangsspeicheranordnung mit Vorspannung von nicht-selektierten Bit-Leitungen
JP4192060B2 (ja) * 2003-09-12 2008-12-03 シャープ株式会社 不揮発性半導体記憶装置
KR100528341B1 (ko) * 2003-12-30 2005-11-15 삼성전자주식회사 자기 램 및 그 읽기방법
US7687830B2 (en) * 2004-09-17 2010-03-30 Ovonyx, Inc. Phase change memory with ovonic threshold switch
US7423897B2 (en) 2004-10-01 2008-09-09 Ovonyx, Inc. Method of operating a programmable resistance memory array
US7154774B2 (en) * 2005-03-30 2006-12-26 Ovonyx, Inc. Detecting switching of access elements of phase change memory cells
US7319617B2 (en) * 2005-05-13 2008-01-15 Winbond Electronics Corporation Small sector floating gate flash memory
EP2249351B1 (de) 2005-06-03 2013-05-01 STMicroelectronics Srl Verfahren zum Programmieren von Phasenübergangsspeicherzellen mit mehrfachen Speicherniveaus mithilfe eines Perkolationsalgorithmus
US20060279979A1 (en) * 2005-06-13 2006-12-14 Tyler Lowrey Method of reading phase-change memory elements
US7656710B1 (en) * 2005-07-14 2010-02-02 Sau Ching Wong Adaptive operations for nonvolatile memories
EP1843356A1 (de) * 2006-04-03 2007-10-10 STMicroelectronics S.r.l. Verfahren und System zur Aktualisierung einer Speichervorrichtung während ihres Lesens
US7286429B1 (en) * 2006-04-24 2007-10-23 Taiwan Semiconductor Manufacturing Company, Ltd. High speed sensing amplifier for an MRAM cell
DE602006012825D1 (de) 2006-07-27 2010-04-22 St Microelectronics Srl Phasenwechsel-Speichervorrichtung
JP5060191B2 (ja) * 2007-07-18 2012-10-31 株式会社東芝 抵抗変化メモリ装置のデータ書き込み方法
US7688634B2 (en) * 2007-08-06 2010-03-30 Qimonda Ag Method of operating an integrated circuit having at least one memory cell

Also Published As

Publication number Publication date
US20140036583A1 (en) 2014-02-06
US20100165719A1 (en) 2010-07-01
EP1883113B1 (de) 2010-03-10
KR20090042925A (ko) 2009-05-04
US8553453B2 (en) 2013-10-08
DE112007001750T5 (de) 2009-08-20
US20150287458A1 (en) 2015-10-08
US9779805B2 (en) 2017-10-03
US9064565B2 (en) 2015-06-23
CN101443914A (zh) 2009-05-27
WO2008012342A1 (en) 2008-01-31
CN101443914B (zh) 2011-08-17
EP1883113A1 (de) 2008-01-30
JP2009545095A (ja) 2009-12-17
JP5172836B2 (ja) 2013-03-27
US10482954B2 (en) 2019-11-19
US20170352414A1 (en) 2017-12-07
KR101390456B1 (ko) 2014-04-29

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