DE602005018744D1 - Lateraler Phasenwechselspeicher - Google Patents

Lateraler Phasenwechselspeicher

Info

Publication number
DE602005018744D1
DE602005018744D1 DE602005018744T DE602005018744T DE602005018744D1 DE 602005018744 D1 DE602005018744 D1 DE 602005018744D1 DE 602005018744 T DE602005018744 T DE 602005018744T DE 602005018744 T DE602005018744 T DE 602005018744T DE 602005018744 D1 DE602005018744 D1 DE 602005018744D1
Authority
DE
Germany
Prior art keywords
phase change
change memory
lateral phase
lateral
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005018744T
Other languages
English (en)
Inventor
Richard Dodge
Guy Wicker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Publication of DE602005018744D1 publication Critical patent/DE602005018744D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
DE602005018744T 2005-04-08 2005-04-08 Lateraler Phasenwechselspeicher Active DE602005018744D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP05102814A EP1710850B1 (de) 2005-04-08 2005-04-08 Lateraler Phasenwechselspeicher

Publications (1)

Publication Number Publication Date
DE602005018744D1 true DE602005018744D1 (de) 2010-02-25

Family

ID=34939211

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005018744T Active DE602005018744D1 (de) 2005-04-08 2005-04-08 Lateraler Phasenwechselspeicher

Country Status (3)

Country Link
US (3) US7816660B2 (de)
EP (1) EP1710850B1 (de)
DE (1) DE602005018744D1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8003521B2 (en) 2009-04-07 2011-08-23 Micron Technology, Inc. Semiconductor processing
US9741930B2 (en) * 2015-03-27 2017-08-22 Intel Corporation Materials and components in phase change memory devices

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3619732A (en) 1969-05-16 1971-11-09 Energy Conversion Devices Inc Coplanar semiconductor switch structure
US4115872A (en) * 1977-05-31 1978-09-19 Burroughs Corporation Amorphous semiconductor memory device for employment in an electrically alterable read-only memory
US4203123A (en) * 1977-12-12 1980-05-13 Burroughs Corporation Thin film memory device employing amorphous semiconductor materials
US5166758A (en) * 1991-01-18 1992-11-24 Energy Conversion Devices, Inc. Electrically erasable phase change memory
US6969866B1 (en) * 1997-10-01 2005-11-29 Ovonyx, Inc. Electrically programmable memory element with improved contacts
EP1171920B1 (de) 1999-03-25 2006-11-29 OVONYX Inc. Elektrisch programmierbares speicherelement mit verbesserten kontakten
US7247876B2 (en) * 2000-06-30 2007-07-24 Intel Corporation Three dimensional programmable device and method for fabricating the same
US6764894B2 (en) * 2001-08-31 2004-07-20 Ovonyx, Inc. Elevated pore phase-change memory
US6773967B1 (en) * 2002-01-04 2004-08-10 Taiwan Semiconductor Manufacturing Company Method to prevent antifuse Si damage using sidewall spacers
DE60226839D1 (de) 2002-02-20 2008-07-10 St Microelectronics Srl Phasenwechsel-Speicherzelle sowie deren Herstellungsverfahren mittels Minigräben
US6940085B2 (en) * 2002-04-02 2005-09-06 Hewlett-Packard Development Company, I.P. Memory structures
US6605821B1 (en) * 2002-05-10 2003-08-12 Hewlett-Packard Development Company, L.P. Phase change material electronic memory structure and method for forming
US6791102B2 (en) * 2002-12-13 2004-09-14 Intel Corporation Phase change memory
US6744088B1 (en) * 2002-12-13 2004-06-01 Intel Corporation Phase change memory device on a planar composite layer
US6867425B2 (en) 2002-12-13 2005-03-15 Intel Corporation Lateral phase change memory and method therefor
US7115927B2 (en) * 2003-02-24 2006-10-03 Samsung Electronics Co., Ltd. Phase changeable memory devices
US20040197947A1 (en) * 2003-04-07 2004-10-07 Fricke Peter J. Memory-cell filament electrodes and methods
US7029978B2 (en) * 2003-08-04 2006-04-18 Intel Corporation Controlling the location of conduction breakdown in phase change memories
DE20321085U1 (de) * 2003-10-23 2005-12-29 Commissariat à l'Energie Atomique Phasenwechselspeicher, Phasenwechselspeicheranordnung, Phasenwechselspeicherzelle, 2D-Phasenwechselspeicherzellen-Array, 3D-Phasenwechselspeicherzellen-Array und Elektronikbaustein
KR100618855B1 (ko) * 2004-08-02 2006-09-01 삼성전자주식회사 금속 콘택 구조체 형성방법 및 이를 이용한 상변화 메모리제조방법
US20060056234A1 (en) * 2004-09-10 2006-03-16 Lowrey Tyler A Using a phase change memory as a shadow RAM
US7135696B2 (en) * 2004-09-24 2006-11-14 Intel Corporation Phase change memory with damascene memory element
JP2008529269A (ja) * 2005-01-25 2008-07-31 エヌエックスピー ビー ヴィ バックエンドプロセスを使用する相変化抵抗体の製造
US7696077B2 (en) * 2006-07-14 2010-04-13 Micron Technology, Inc. Bottom electrode contacts for semiconductor devices and methods of forming same

Also Published As

Publication number Publication date
EP1710850B1 (de) 2010-01-06
US8211742B2 (en) 2012-07-03
US20070096072A1 (en) 2007-05-03
US20120241704A1 (en) 2012-09-27
US7816660B2 (en) 2010-10-19
US20110003454A1 (en) 2011-01-06
EP1710850A1 (de) 2006-10-11
US8431922B2 (en) 2013-04-30

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: STMICROELECTRONICS S.R.L., AGRATE BRIANZA, MON, IT

8364 No opposition during term of opposition