JP5060191B2 - 抵抗変化メモリ装置のデータ書き込み方法 - Google Patents
抵抗変化メモリ装置のデータ書き込み方法 Download PDFInfo
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- JP5060191B2 JP5060191B2 JP2007186996A JP2007186996A JP5060191B2 JP 5060191 B2 JP5060191 B2 JP 5060191B2 JP 2007186996 A JP2007186996 A JP 2007186996A JP 2007186996 A JP2007186996 A JP 2007186996A JP 5060191 B2 JP5060191 B2 JP 5060191B2
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- resistance value
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5685—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using storage elements comprising metal oxide memory material, e.g. perovskites
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0061—Timing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0064—Verifying circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/009—Write using potential difference applied between cell electrodes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/0092—Write characterized by the shape, e.g. form, length, amplitude of the write pulse
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/31—Material having complex metal oxide, e.g. perovskite structure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/32—Material having simple binary metal oxide structure
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Description
メモリセルの複数抵抗値レベルの一つへの書き込みを、各電圧パルス間に一定の熱緩和時間を設定した複数の電圧パルス印加により行い、各電圧パルスの形状を前回の電圧パルス印加の結果としての抵抗値に応じて制御する
ことを特徴とする。
Claims (2)
- 抵抗変化メモリ装置に多値データを書き込む方法であって、
メモリセルの複数抵抗値レベルの一つへの書き込みを、各電圧パルス間に一定の熱緩和時間を設定した複数の電圧パルス印加により行い、各電圧パルスの形状を前回の電圧パルス印加の結果としての抵抗値に応じて制御し、
メモリセルの複数抵抗値レベルのそれぞれの間に境界抵抗値を設定すると共に、これらを参照抵抗値とする抵抗値区間を設定して、所望の抵抗値レベルへの書き込み時、電圧パルス印加毎にメモリセル抵抗値がどの抵抗値区間にあるかを判定して、書き込み制御を行い、
メモリセルの低抵抗状態を初期状態として、電圧パルス印加によるジュール熱によりそれより高い複数抵抗値レベルの一つへの書き込みを行う際に、各電圧パルスの幅を、その電圧パルスでメモリセル内に発生する熱が略一定となるように設定する
ことを特徴とする抵抗変化メモリ装置のデータ書き込み方法。 - 抵抗変化メモリ装置に多値データを書き込む方法であって、
メモリセルの複数抵抗値レベルの一つへの書き込みを、各電圧パルス間に一定の熱緩和時間を設定した複数の電圧パルス印加により行い、各電圧パルスの形状を前回の電圧パルス印加の結果としての抵抗値に応じて制御し、
メモリセルの複数抵抗値レベルのそれぞれの間に境界抵抗値を設定すると共に、これらを参照抵抗値とする抵抗値区間を設定して、所望の抵抗値レベルへの書き込み時、電圧パルス印加毎にメモリセル抵抗値がどの抵抗値区間にあるかを判定して、書き込み制御を行い、
メモリセルの高抵抗状態を初期状態として、メモリセルに印加される電圧によりそれより低い複数抵抗値レベルの一つへの書き込みを行う際に、各電圧パルスの幅を、メモリセルに印加される電圧の積分値が略一定となるように設定する
ことを特徴とする抵抗変化メモリ装置のデータ書き込み方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007186996A JP5060191B2 (ja) | 2007-07-18 | 2007-07-18 | 抵抗変化メモリ装置のデータ書き込み方法 |
CN2008800249731A CN101755306B (zh) | 2007-07-18 | 2008-06-25 | 一种电阻改变存储器设备及其编程方法 |
PCT/JP2008/061935 WO2009011221A1 (en) | 2007-07-18 | 2008-06-25 | A resistance change memory device and programming method thereof |
KR1020107003429A KR101227826B1 (ko) | 2007-07-18 | 2008-06-25 | 저항 변화 메모리 장치 및 그 프로그래밍 방법 |
US12/668,750 US8184470B2 (en) | 2007-07-18 | 2008-06-25 | Resistance change memory device and programming method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007186996A JP5060191B2 (ja) | 2007-07-18 | 2007-07-18 | 抵抗変化メモリ装置のデータ書き込み方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009026364A JP2009026364A (ja) | 2009-02-05 |
JP5060191B2 true JP5060191B2 (ja) | 2012-10-31 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2007186996A Expired - Fee Related JP5060191B2 (ja) | 2007-07-18 | 2007-07-18 | 抵抗変化メモリ装置のデータ書き込み方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8184470B2 (ja) |
JP (1) | JP5060191B2 (ja) |
KR (1) | KR101227826B1 (ja) |
CN (1) | CN101755306B (ja) |
WO (1) | WO2009011221A1 (ja) |
Cited By (2)
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WO2008018209A1 (fr) * | 2006-08-09 | 2008-02-14 | Mitsubishi Electric Corporation | Dispositif de reproduction de disque optique |
US7990821B2 (en) | 2006-08-09 | 2011-08-02 | Mitsubishi Electric Corporation | Optical disk playback device |
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2007
- 2007-07-18 JP JP2007186996A patent/JP5060191B2/ja not_active Expired - Fee Related
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2008
- 2008-06-25 CN CN2008800249731A patent/CN101755306B/zh not_active Expired - Fee Related
- 2008-06-25 US US12/668,750 patent/US8184470B2/en not_active Expired - Fee Related
- 2008-06-25 WO PCT/JP2008/061935 patent/WO2009011221A1/en active Application Filing
- 2008-06-25 KR KR1020107003429A patent/KR101227826B1/ko not_active IP Right Cessation
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Publication number | Priority date | Publication date | Assignee | Title |
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WO2008018209A1 (fr) * | 2006-08-09 | 2008-02-14 | Mitsubishi Electric Corporation | Dispositif de reproduction de disque optique |
US7990821B2 (en) | 2006-08-09 | 2011-08-02 | Mitsubishi Electric Corporation | Optical disk playback device |
Also Published As
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KR101227826B1 (ko) | 2013-01-29 |
US8184470B2 (en) | 2012-05-22 |
CN101755306B (zh) | 2013-03-27 |
KR20100040931A (ko) | 2010-04-21 |
CN101755306A (zh) | 2010-06-23 |
JP2009026364A (ja) | 2009-02-05 |
US20100188885A1 (en) | 2010-07-29 |
WO2009011221A1 (en) | 2009-01-22 |
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