JP5172836B2 - 相変化メモリデバイス - Google Patents
相変化メモリデバイス Download PDFInfo
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- JP5172836B2 JP5172836B2 JP2009521273A JP2009521273A JP5172836B2 JP 5172836 B2 JP5172836 B2 JP 5172836B2 JP 2009521273 A JP2009521273 A JP 2009521273A JP 2009521273 A JP2009521273 A JP 2009521273A JP 5172836 B2 JP5172836 B2 JP 5172836B2
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- H10N70/20—Multistable switching devices, e.g. memristors
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- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
- H10B63/24—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the Ovonic threshold switching type
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8413—Electrodes adapted for resistive heating
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
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- G—PHYSICS
- G11—INFORMATION STORAGE
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- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
- G11C2013/0054—Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/79—Array wherein the access device being a transistor
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- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
Description
Claims (4)
- 相変化メモリデバイスにおいて、
メモリセル(2)の複数のグループ(7)によって形成されるメモリアレイ(1)を備え、前記メモリセルは、行と列に配置され、ワードライン(6)とデータビットライン(5)の交差点で接続され、各メモリセルは、相変化メモリ要素(3)及び選択スイッチ(4)を具備し、
さらに、前記相変化メモリデバイスは、
複数の基準セル(2a乃至2c)を具備し、各基準セル(2a乃至2c)が、基準相変化メモリ要素(3a乃至3c)及び基準選択スイッチ(4a乃至4c)を具備し、前記複数の基準セルそれぞれは、前記メモリセルの複数のグループの少なくとも一つに接続されており、
さらに、前記相変化メモリデバイスは、
前記メモリアレイに接続されている読み取り段であって、データビットラインスイッチ及び基準ビットラインスイッチそれぞれを介して前記データビットライン及び基準ビットラインに接続可能な電流コンバータ/電圧コンバータを具備する読み取り段を備え、前記基準ビットラインスイッチは、読み取り動作の間、電流を前記複数の基準セルの一つからそれぞれ前記データビットラインの一つに供給する順で有効となるよう構成されており、前記メモリセルの複数のグループの電気量は、読み取り動作の間、前記基準セルの電気量と比較され、前記メモリセルのグループにおいて、ドリフトが補償されることを特徴とする相変化メモリデバイス。 - 前記メモリセル(2)の複数のグループ(7)のそれぞれ及び関連する前記複数の基準セル(2a乃至2c)の一つが、同一のワードライン(6)に沿って伸びており、前記複数の基準セル(2a)が、前記基準ビットライン(5a乃至5c)に接続されていることを特徴とする請求項1に記載の相変化メモリデバイス。
- システムであって、
プロセッサー(510)と、
前記プロセッサーに接続されているインプット/アウトプットデバイス(520)と、 前記プロセッサーに接続されているメモリ(530)であって、請求項1に記載の相変化メモリデバイスを具備するメモリと、
を備えることを特徴とするシステム。 - 相変化メモリデバイスを読み取るための方法において、
その相変化メモリデバイスが、
メモリセル(2)の複数のグループ(7)によって形成されるメモリアレイ(1)を備え、前記メモリセルは、行と列に配置され、ワードライン(6)とデータビットライン(5)の交差点で接続され、各メモリセル(2)は、相変化メモリ要素(3)と選択スイッチ(4)を具備し、
さらに、前記メモリデバイスは、複数の基準セル(5a)を備え、当該複数の基準セル(5a)それぞれは、基準相変化メモリ要素(3)及び基準選択スイッチ(4)を具備し、前記複数の基準セルは、前記メモリセルの複数のグループの少なくとも一つに関連し、基準ビットラインに接続されており、方法が、
前記複数の基準セルのそれぞれを電流コンバータ/電圧コンバータに順に接続し、電流を前記複数の基準セルの一つからそれぞれ前記データビットラインの一つに供給するステップと、
前記メモリセル(2)と前記複数の基準セル(2a乃至2c)のうち接続されている一つとの電気的な挙動を比較するステップとを含み、
前記メモリセルの複数のグループの電気量は、読み取り動作の間、前記基準セルの電気量と比較され、前記メモリセルのグループにおいて、ドリフトが補償されることを特徴とする方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06425531A EP1883113B1 (en) | 2006-07-27 | 2006-07-27 | Phase change memory device |
EP06425531.8 | 2006-07-27 | ||
PCT/EP2007/057706 WO2008012342A1 (en) | 2006-07-27 | 2007-07-26 | Phase change memory device |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009545095A JP2009545095A (ja) | 2009-12-17 |
JP2009545095A5 JP2009545095A5 (ja) | 2010-07-29 |
JP5172836B2 true JP5172836B2 (ja) | 2013-03-27 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009521273A Active JP5172836B2 (ja) | 2006-07-27 | 2007-07-26 | 相変化メモリデバイス |
Country Status (7)
Country | Link |
---|---|
US (4) | US8553453B2 (ja) |
EP (1) | EP1883113B1 (ja) |
JP (1) | JP5172836B2 (ja) |
KR (1) | KR101390456B1 (ja) |
CN (1) | CN101443914B (ja) |
DE (2) | DE602006012825D1 (ja) |
WO (1) | WO2008012342A1 (ja) |
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EP1883113B1 (en) | 2010-03-10 |
JP2009545095A (ja) | 2009-12-17 |
EP1883113A1 (en) | 2008-01-30 |
US9779805B2 (en) | 2017-10-03 |
US8553453B2 (en) | 2013-10-08 |
DE112007001750T5 (de) | 2009-08-20 |
WO2008012342A1 (en) | 2008-01-31 |
KR20090042925A (ko) | 2009-05-04 |
US20170352414A1 (en) | 2017-12-07 |
US20150287458A1 (en) | 2015-10-08 |
US9064565B2 (en) | 2015-06-23 |
US20100165719A1 (en) | 2010-07-01 |
DE602006012825D1 (de) | 2010-04-22 |
US20140036583A1 (en) | 2014-02-06 |
US10482954B2 (en) | 2019-11-19 |
KR101390456B1 (ko) | 2014-04-29 |
CN101443914A (zh) | 2009-05-27 |
CN101443914B (zh) | 2011-08-17 |
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